MCP111T-270I/LB - Microchip Technology

 2004 Microchip Technology Inc. DS21889A-page 1

MCP111/112

Features

• Ultra low supply current: 1.75 µA (max.)

• Pr ecisio n monitoring options of:

- 1.90V, 2.32V, 2.63V, 2.90V, 2.93V, 3.08V,

4.38V and 4.63V

• Resets microcontroller in a power loss event

•Active-low V

OUT pin:

- MCP111 active-low, open-drain

- MCP112 active-lo w, push-pull

• A va ila ble in SO T23 -3, T O -9 2 and SC70 p ac k age s

• Temperature Range:

- Extended: -40°C to +125°C

(except MCP1XX-195)

- Industrial: -40°C to +85°C (MCP1XX-195 only)

Applications

• Critical µC and µP Power Monitoring Applications

• Computers

• Intelligent Instruments

• Port ab le Batte ry-Po wered Equipm en t

Block Diagram

Description

The MCP111/112 are voltage-detecting devices

designed to keep a microcontroller in reset until the

system voltage has reached and stabilized at the

proper level for reliable system operation. These

devices also operate as protection from brown-out

conditions when the system supply voltage drops

below a safe operating level. The MCP111 and

MCP112 are available in eight different trip voltages.

The MCP111 has an open-drain output with an active-

low pin (VOUT). This device will assert VOUT when the

voltage on the VDD pin is below the trip-point voltage.

The MCP112 has a push-pull output and will assert an

active-low signal (VOUT pin) when the voltage on the

VDD pin is below the trip-point voltage.

During operation, the output (VOUT) remains at a logic-

high as long as VDD is greater that the specified

threshold voltage. When VDD falls below the voltage

trip point, VOUT is driven low.

Package Types

VDD

Comparator

–Output

Driver VOUT

Band Gap

Reference

VSS

SOT23-3/SC-70

VDD

VOUT

MCP111/112

VSS

VOUT

TO-92

VDD

Microp ower Voltage Detector

MCP111/112
DS21889A-page 2  2004 Microchip Technology Inc.
1.0 ELECTRICAL 
CHARACTERISTICS
Absolute Maximum Ratings†
VDD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7.0V
Input current (VDD) . . . . . . . . . . . . . . . . . . . . . . . . . . . .10 m A
Output current (RST)  . . . . . . . . . . . . . . . . . . . . . . . . . .10 mA
Rated Rise Time of VDD . . .  . . . . . . . . . . .  . . . . . . . .  100V /µs
All inputs and outputs w.r.t . VSS  . . . . . –0. 6 V to (VDD + 1.0V)
Storage temperature . . . . .  . . . . . . . . . . . . .–65°C to + 150°C
Ambient temp. with power applied . . . . . . .–40°C to + 125°C
Maximum Junction temp. with power applied . . . . . . . .150°C
ESD protection on all pins. . . . . . . . . . . . . . . . . . . . . . . . . ≥ 2kV
† Notice: Stres ses above those listed under “Maximum Rat -
ings” may cause  permanent damage to the devic e. This is a
stress rating only and functional operation of the device at
those or any other conditions above those indicated in the
operational listings of this specification is not implied. Expo-
sure to max imum rati ng conditions for  extended periods  may
affect device reliability.
DC CHARACTERISTICS
Electrical Specifications: Unless  otherwise indicated, all limits are specified f or VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111),
TA = –40°C to +125°C.
Parameters Sym Min Typ Max Units Conditions
Operating Voltage Range VDD 1.0 — 5.5 V
Specified VDD Value to VOUT low VDD 1.0 — V I RST = 10 uA, V RST < 0.2V
Operating Current IDD —< 11.75µA
VDD Trip Point MCP1XX-195 VTRIP 1.872 1.900 1.929 V TA = +25°C (Note 1)
1.853 1.900 1.948 V TA = -40°C to +85°C 
(Note 2)
MCP1XX-240 2.285 2.320 2.355 V TA = +25°C (Note 1)
2.262 2.320 2.378 V Note 2
MCP1XX-270 2.591 2.630 2.670 V TA = +25°C (Note 1)
2.564 2.630 2.696 V Note 2
MCP1XX-290 2.857 2.900 2.944 V TA = +25°C (Note 1)
2.828 2.900 2.973 V Note 2
MCP1XX-300 2.886 2.930 2.974 V TA = +25°C (Note 1)
2.857 2.930 3.003 V Note 2
MCP1XX-315 3.034 3.080 3.126 V TA = +25°C (Note 1)
3.003 3.080 3.157 V Note 2
MCP1XX-450 4.314 4.380 4.446 V TA = +25°C (Note 1)
4.271 4.380 4.490 V Note 2
MCP1XX-475 4.561 4.630 4.700 V TA = +25°C (Note 1)
4.514 4.630 4.746 V Note 2
VDD Trip Point Tempco TTPCO — ±100 — ppm/°C
Threshold Hysteresis
(min. = 1%, max = 6%) MCP1XX-195 VHYS 0.019 — 0.114 V TA = +25°C
MCP1XX-240 0.023 — 0.139 V
MCP1XX-270 0.026 — 0.158 V
MCP1XX-290 0.029 — 0.174 V
MCP1XX-300 0.029 — 0.176 V
MCP1XX-315 0.031 — 0.185 V
MCP1XX-450 0.044 — 0.263 V
MCP1XX-475 0.046 — 0.278 V
Note 1: Trip point is ±1.5% from typical value.
2: Trip point is ±2.5% from typical value.

 2004 Microchip Technology Inc. DS21889A-page 3

MCP111/112

FIGURE 1-1: Timing Diagram.

AC CHARACTERISTICS

VOUT Low Level Output Voltage VOL ——0.4VI

OL=500 µA, VDD=VTRIP(MIN)

VOUT High Level Output Voltage VOH VDD – 0.6 — — V IOH = 1 mA, For only

MCP112 (push-pull output)

Open-Drain Output Leakage Current

(MCP111 only) IOD —0.1—µA

DC CHARACTERISTICS (CONTINUED)

Electrical Specifications: Unless otherwise indicated, all limits are specified f or VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111),

TA = –40°C to +125°C.

Parameters Sym Min Typ Max Units Conditions

Note 1: Trip point is ±1.5% from typical value.

2: Trip point is ±2.5% from typical value.

Electrical Specifications: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ

(only MCP111), TA = –40°C to +125°C.

Parameters Sym Min Typ Max Units Conditions

VDD Detec t to VOUT Inactive tRPU —90 — µs Figure 1-1 and CL = 50 pF

(Note 1)

VDD Detec t to VOUT Active tRPD — 130 — µs VDD ramped from VTRIP(MAX) +

250 mV down to VTRIP(MIN) -

250 mV, per Figure 1-1,

CL = 50 pF (Note 1)

VOUT Rise Time After VOUT Active tRT —5 —µs For VOUT 10% to 90% of final

value per Figure 1-1, CL = 50 pF

(Note 1)

Note 1: These parameters are for design guidance only and are not 100% tested.

VTRIP

VDD

VOUT

tRPU

VOH

tRT

tRPD

VOL

MCP111/112

DS21889A-page 4  2004 Microchip Technology Inc.

TEMPERATURE CHARACTERISTIC S

Electrical S pe cific atio ns: Unles s otherwise noted, al l limits are specif ied for VDD = 1V to 5.5V, RPU = 100 kΩ (only

MCP111), TA = -40°C to +125°C.

Parameters Sym Min Typ Max Units Conditions

Temperature Ranges

Sp ecified Temperat ure Range TA-40 — +85 ºC MCP1XX-195

Sp ecified Temperat ure Range TA-40 — +125 ºC Except MCP1XX-195

Maximum Junction Te mperature TJ——+150ºC

Storage Temperature Range TA-65 — +150 ºC

Package Thermal Resistances

Thermal Resistance, 3L-SOT23 θJA — 336 — ºC/W

Thermal Resistance, 3L-SC-70 θJA — 340 — ºC/W

Thermal Resistance, 3L-TO92 θJA —131.9 — ºC/W

 2004 Microchip Technology Inc. DS21889A-page 5

MCP111/112

2.0 TYPICAL PERFORMANCE CURVES

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP11 1;

see Figure 4-1), TA = -40°C to +125°C.

FIGURE 2-1: IDD vs. Temperature

(MCP111-195).

FIGURE 2-2: IDD vs. Temperature

(MCP112-300).

FIGURE 2-3: IDD vs. Temperature

(MCP112-475).

FIGURE 2-4: IDD vs. VDD (MCP111-195).

FIGURE 2-5: IDD vs. VDD (MCP112-300).

FIGURE 2-6: IDD vs. VDD (MCP112-475).

Note: The g r ap hs and t ables provided following thi s n ote are a statis tic al s umm ar y based on a l imited number of

samples and are provided for informational purposes only. The performance characteristics listed herein

are not tested or guaranteed. In some graphs or tables, the data presented may be outside the specified

operating range (e.g., outside specified power supply range) and therefore outside the warranted range.

0.2

0.4

0.6

0.8

1.2

1.4

1.6

-40

-20

100

120

140

Temperature (°C)

IDD (uA)

1.7V

1.0V

2.1V

2.8V

4.0V

5.0V

5.5V

MCP111-195

0.2

0.4

0.6

0.8

1.2

-40

-20

100

120

140

Temperatu re (°C)

IDD (uA)

1.7V

1.0V

2.1V

2.8V

4.0V

5.0V

MCP112-300 5.5V

0.1

0.2

0.3

0.4

0.5

0.6

0.7

0.8

0.9

-40

-20

100

120

140

Temperature (°C)

IDD (uA)

1.7V

1.0V

2.1V

2.8V

4.0V

5.0V

5.5V

MCP112-475

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.02.03.04.05.06.

VDD (V)

IDD (uA)

-40°C

+25°C

+85°C

+125°C

MCP111-195

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.0 2.0 3.0 4.0 5.0 6.0

VDD (V)

IDD (uA)

MCP112-300

-40°C

+25°C

+85°C

+125°C

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.0 2.0 3.0 4.0 5.0 6.

VDD (V)

IDD (uA)

MCP112-475

-40°C

+25°C

+85°C

+125°C

MCP111/112

DS21889A-page 6  2004 Microchip Technology Inc.

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111;

see Figure 4-1), TA = -40°C to +125°C.

FIGURE 2-7: VTRIP and VHYST vs.

Temperature (MCP111-195).

FIGURE 2-8: VTRIP and VHYST vs.

Temperature (MCP112-300).

FIGURE 2-9: VTRIP and VHYST vs.

Temperature (MCP112-475).

FIGURE 2-10: VOL vs. IOL (MCP111-195

@ VDD = 1.7V).

FIGURE 2-11: VOL vs. IOL (MCP112-300

@ VDD = 2.7V).

FIGURE 2-12: VOL vs. IOL (MCP112-475

@ VDD = 4.4V).

1.895

1.900

1.905

1.910

1.915

1.920

1.925

1.930

1.935

1.940

1.945

1.950

-60 -10 40 90 140

Temperature (°C)

VTRIP (V)

0.000

0.005

0.010

0.015

0.020

0.025

0.030

0.035

0.040

0.045

0.050

Hyst (V)

VTRIP, V decreasing

VTRIP, V incr easing

VHYS, Hysteresis

MCP111-195

max temp is

+85°C

2.900

2.920

2.940

2.960

2.980

3.000

3.020

3.040

-60 -10 40 90 140

Temperature (°C)

VTRIP (V)

0.082

0.084

0.086

0.088

0.090

0.092

0.094

0.096

0.098

0.100

Hyst (V)

MCP112-300

VTRIP, V decreasing

VTRIP, V increasing

VHYS, Hysteresis

4.580

4.600

4.620

4.640

4.660

4.680

4.700

4.720

4.740

4.760

4.780

4.800

-60 -20 20 60 100 140

Temperature (°C)

VTRIP (V)

0.100

0.110

0.120

0.130

0.140

0.150

0.160

0.170

0.180

Hyst (V)

MCP112-475

VTRIP, V decreasing

VTRIP, V incr easing

VHYS, Hyste resis

0.000

0.020

0.040

0.060

0.080

0.100

0.120

0.00 0.25 0.50 0.75 1.00

IOL (mA)

VOL (V)

-40°C

+25°C

+85°C

+125°C

MCP111-195

VDD = 1.7V

0.000

0.010

0.020

0.030

0.040

0.050

0.060

0.070

0.080

0.00 0.25 0.50 0.75 1.00

IOL (mA)

VOL (V)

MCP112-300

VDD = 2.7V

-40°C

+25°C

+85°C

+125°C

0.000

0.010

0.020

0.030

0.040

0.050

0.00 0.25 0.50 0.75 1.00

IOL (mA)

VOL (V)

MCP112-475

VDD = 4.4V

-40°C

+25°C

+85°C

+125°C

 2004 Microchip Technology Inc. DS21889A-page 7

MCP111/112

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP11 1;

see Figure 4-1), TA = -40°C to +125°C.

FIGURE 2-13: VOL vs. Temperature

(MCP111-195 @ VDD = 1.7V ).

FIGURE 2-14: VOL vs. Temperature

(MCP112-300 @ VDD = 2.7V).

FIGURE 2-15: VOL vs. Temperature

(MCP112-475 @ VDD = 4.4V).

FIGURE 2-16: VOH vs. IOH (MCP112-300

@ VDD = 3.1V).

FIGURE 2-17: VOH vs. IOH (MCP112-475

@ VDD = 4.8V).

FIGURE 2-18: Typical Transient Response

(25 °C).

0.000

0.020

0.040

0.060

0.080

0.100

0.120

-40 0 40 80 120

Temperature (°C)

VOL (V)

IOL = 0.00 mA

MCP111-195

VDD = 1.7 V

IOL = 0.25 mA

IOL = 0.50 mA

IOL = 0.75 mA

IOL = 1.00 mA

0.000

0.010

0.020

0.030

0.040

0.050

0.060

0.070

0.080

-40 0 40 80 120

Temperature (°C)

VOL (V)

MCP112-300

VDD = 2.7V

IOL = 0.00 mA

IOL = 0.25 mA

IOL = 0.50 mA

IOL = 0. 75 mA

IOL = 1.00 mA

0.000

0.010

0.020

0.030

0.040

0.050

-40 0 40 80 120

Temperatu re (°C)

VOL (V)

IOL = 0.00 mA

IOL = 0.25 mA

IOL = 0.50 mA

IOL = 0.75 mA

IOL = 1.0 0 mA

MCP112-475

VDD = 4.4V

2.900

2.950

3.000

3.050

3.100

3.150

0.00 0.25 0.50 0.75 1.0

IOL (mA)

VOH (V)

-40 °C +25 °C

+85 °C

+125 °C

MCP112-300

VDD = 3.1V

4.680

4.700

4.720

4.740

4.760

4.780

4.800

4.820

0.00 0.25 0.50 0.75 1.00

IOL (mA)

VOH (V)

MCP112-300

VDD = 3.1V

-40 °C

+25 °C

+85 °C

+125 °C

100

200

300

400

500

600

0.001 0.01 0.1 1 10

VTRIP(min) - VDD

Transient D uration (µs)

MCP111-195

MCP112-475

MCP112-300

MCP111/112

DS21889A-page 8  2004 Microchip Technology Inc.

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP111;

see Figure 4-1), TA = -40°C to +125°C.

FIGURE 2-19: tRPD vs. Temperature

(MCP111-195).

FIGURE 2-20: tRPD vs. Temperature

(MCP112-300).

FIGURE 2-21: tRPD vs. Temperature

(MCP112-475).

FIGURE 2-22: tRPU vs. Temperature

(MCP111-195).

FIGURE 2-23: tRPU vs. Temperature

(MCP112-300).

FIGURE 2-24: tRPU vs. Temperature

(MCP112-475).

100

150

200

250

300

350

-40 -15 10 35 60 85 110

Tempera tur e (°C)

tRPD (µs)

VDD decreasing from:

VTRIP(max) + 0.25V to VTRIP(min) - 0.25V

VDD decreasing from:

5V - 1.7V

VDD decreasing from:

5V - 0V

MCP111-195

100

120

140

160

-40 -15 10 35 60 85 110

Temperature (°C)

tRPD (µs)

VDD decreasing from:

VTRIP(max) + 0.25V to VTRIP(min) - 0.25V

VDD decreasing from:

5V - 2.7V

VDD decreasing from:

5V - 0V

MCP112-300

100

150

200

250

-40 -15 10 35 60 85 110

Temperature (°C)

tRPD (µs)

VDD decreasing from:

VTRIP(max) + 0.25V to VTRIP(min) - 0.25V

VDD decreasing from:

5V - 4.4V

VDD decreasing from:

5V - 0V

MCP112-475

100

150

200

250

300

350

400

-40 -15 10 35 60 85 110

Temperature (°C)

tRPU (µs)

VDD increasing from:

0V - 2.1V

VDD increasing

from: 0V - 5.5V

VDD increasing from:

0V - 2.8V VDD increasing

from: 0V - 4.0V

MCP111-195

100

120

140

-40 -15 10 35 60 85 110

Temperature (°C)

tRPU (µs)

VDD increasing from:

0V - 3.1V

VDD increasing from:

0V - 5.5V

VDD increasing from:

0V - 3.3V

VDD increasing from:

0V - 4.0V

MCP112-300

100

150

200

250

-40 -15 10 35 60 85 110

Tempera ture (°C )

tRPU (µs)

VDD increasing from:

0V - 4.9V

VDD increasing from:

0V - 5.0V

VDD increasing from:

0V - 5.5V

MCP112-475

 2004 Microchip Technology Inc. DS21889A-page 9

MCP111/112

Note: Unless otherwise indicated, all limits are specified for VDD = 1V to 5.5V, RPU = 100 kΩ (only MCP11 1;

see Figure 4-1), TA = -40°C to +125°C.

FIGURE 2-25: tRT vs. Temperature

(MCP111-195).

FIGURE 2-26: tRT vs. Temperature

(MCP112-300).

FIGURE 2-27: tRT vs. Temperature

(MCP112-475).

-40 -15 10 35 60 85 110

Temperature (°C)

tRT (µs)

VDD increasing from:

0V - 2.1V

VDD increasing from:

0V - 5.5V

VDD increasing from:

0V - 2.8V

VDD increasing

from: 0V - 4.0V

MCP111-195

0.05

0.1

0.15

0.2

0.25

0.3

0.35

0.4

-40 -15 10 35 60 85 110

Temperature (°C)

tRT (µs)

VDD increasing from:

0V - 3.1V

VDD increasing from:

0V - 5.5V

VDD increasing from:

0V - 3.3V

VDD increasing from:

0V - 4.0V

MCP112-300

0.0800

0.0900

0.1000

0.1100

0.1200

0.1300

0.1400

0.1500

-40 -15 10 35 60 85 110

Temperature (°C)

tRT (µs)

VDD increasing from:

0V - 4.8V

VDD increasing from:

0V - 5.5V

VDD increasing from:

0V - 4.9V

VDD increasing from:

0V - 5.0V

MCP112-475

MCP111/112

DS21889A-page 10  2004 Microchip Technology Inc.

3.0 PIN DESCRIPTION

The descriptions of the pins are listed in Table 3-1.

TABLE 3-1: PIN FUNCTION TABLE

Pin No.

Symbol Function

SOT23-3

SC-70 T0-92

11V

OUT Output State

VDD Falling:

H = VDD > VTRIP

L = VDD < VTRIP

VDD Rising:

H = VDD > VTRIP + VHYS

L = VDD < VTRIP + VHYS

23V

SS Gr ound refere nce

32V

DD Positive pow e r suppl y

 2004 Microchip Technology Inc. DS21889A-page 11

MCP111/112

4.0 APPLICATION INFORMATION

For many of today’s microcontroller applications, care

must be taken to prevent low power conditions that can

cause many different system problems. The most

common causes are brown-out conditions, where the

system supply drops below the operating level momen-

tarily . The second most common cause is when a slowly

decaying power supply causes the microcontroller to

begin executing instructions without sufficient voltage to

sustain SRAM, thus producing indeterminate results.

Figure 4-1 shows a typical application circuit.

FIGURE 4-1: Typic al App li ca tio n Circui t.

4.1 VTRIP Operation

The volt age trip point ( VTRIP) is determined on the falling

edge of VDD. The a ctual vol tage tr ip poi nt (VTRIPAC) will

be between the minimum trip point (VTRIPMIN) and the

maximum trip point (VTRIPMAX). There is a hysteresis on

this trip point to remove any “jitter” that would occur on

the VOUT pin when the device VDD is at the trip point.

Figure 4-2 shows the state of the VOUT pin as deter-

mined by the VDD voltage. The VTRIP specification is for

falling VDD vo lta ges. W hen the V DD vo lta ge is rising , the

VOUT will not be driven high until VDD is at VTRIP + VHYS.

FIGURE 4-2: VOUT Operation as Determined by the VTRIP and VHYS.

MCP11X

VDD

VOUT RESET

INPUT

(Active-Low)

VSS GND

PICmicro®

Microcontroller

RPU

Note 1: RPU may be required with the MCP111

due to the open-drain output. Resisto

RPU is not required with the MCP112.

0.1

µF

VDD VTRIPMAX

VTRIPMIN VTRIPAC

VTRIPAC

VTRIPAC + VHYSAC

VOUT

< 1 V is ou tside the

device specifications

MCP111/112

DS21889A-page 12  2004 Microchip Technology Inc.

4.2 Negative Going VDD Transients

The minimum pulse width (time) required to cause a

reset may be an important criteria in the implementa-

tion of a POR circuit. This time is referred to as

transien t durat ion an d is the am ount o f time need ed for

these s up erv iso ry devices to res po nd to a dro p in VDD.

The transi ent duration ti me is depend ant on the magn i-

tude of VTRIP – VDD. Generally speaking, the transient

duration decreases with increases in VTRIP – VDD.

Figur e 4-3 shows a typ ical tran sient du ration vs . reset

comparator overdrive for which the MCP111/112 will

not generate a reset pulse. It shows that the farther

below the trip point the transient pulse goes, the dura-

tion of the pulse required to cause a reset g ets shorter.

Figure 2-18 shows the transient response characteris-

tics for the MCP111/112.

A 0.1 µF bypass cap mounted as close as possible to

the VDD pin provides additional transient immunity

(refer to Figure 4-1).

FIGURE 4-3: Example of Typical

Transient Duration Waveform.

4.3 Effect of Temperature on T ime-out

Period (tRPU)

The time-out period (tRPU) determines how long the

device remains in the reset condition. This is affected

by both VDD and temperature. The graph shown in

Figures 2-22, 2-23 and 2-24 show typical response for

different VDD values and temperatures.

Time (µs)

Supply Voltage

VTRIP(MIN) - VDD

tTRANS

VTRIP(MAX)

VTRIP(MIN)

 2004 Microchip Technology Inc. DS21889A-page 13

MCP111/112

5.0 PACKAGING INFORMATION

5.1 Package Marking Information

Part Number SOT-23 SC-70 Part Number SOT -23 SC-70

MCP111T-195I/LB MPNN MCP112T-195E/LB NN

MCP111T-240E/LB MQNN MCP112T-240E/LB MSNN

MCP111T-270E/LB MGNN MCP112T-270E/LB MANN

MCP111T-290E/LB MHNN MCP112T-290E/LB MBNN

MCP111T-300E/LB MJNN MCP112T-300E/LB MCNN

MCP111T-315E/LB MKNN MCP112T-315E/LB MDNN

MCP111T-450E/LB MLNN MCP112T-450E/LB MENN

MCP111T-475E/LB MMNN MCP112T-475E/LB MFNN

MCP111T-195I/TT EPN MCP112T-195I/TT ERN

MCP111T-240ETT EQN MCP112T-240ETT ESN

MCP111T-270E/TT EGN MCP112T-270E/TT EAN

MCP111T-290E/TT EHN MCP112T-290E/TT EBN

MCP111T-300E/TT EJN MCP112T-300E/TT ECN

MCP111T-315E/TT EKN MCP112T-315E/TT EDN

MCP111T-450E/TT ELN MCP112T-450E/TT EEN

MCP111T-475E/TT EMN MCP112T-475E/TT EFN

Legend: 1 Part Number + temperature range and voltage (two-digit code)

2 Part Num ber + temperature range and voltage (two-digit code)

3 Lot ID number

4 Year and work week

5 Year and work week

6 Year and work week

Note: In the event the full Microchip part number cannot be marked on one line, it will be

carried over to the next line thus limiting the number of available characters for customer

specific information.

3-Pin SOT-23B 3-Pin SC-70

To p Side Bottom Side

cdef

cde

fgh

3-Lead TO -92

XXXXXX

YWWNNN

Example:

MCP111

290I

TO0405

256

MCP111/112

DS21889A-page 14  2004 Microchip Technology Inc.

3-Lead Plastic Small Outline Transistor (NB) (SOT-23)

10501050

Mold Draft Angle Bottom 10501050

Mold Draft Angle Top 0.510.440.37.020.017.015BLead Width 0.180.140.09.007.006.004

Lead Thickness 10501050

Foot Angle 0.550.450.35.022.018.014LFoot Length 3.042.922.80.120.115.110DOvera ll Length 1.401.301.20.055.051.047E1Molded Package Width 2.642.372.10.104.093.083EOverall Width 0.100.060.01.004.002.000A1Standoff § 1.020.950.88.040.037.035A2Molded Package Thickness 1.121.010.89.044.040.035AOverall Height 1.92.076

Outside lead pitch (basic) 0.96.038

Pitch 33

Number of Pins MAXNOMMINMAXNOMMINDimen sion Li mits MILLIMETERSINCHES*Units

* Controlling Parameter

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: TO-236

Drawing No. C04-104

§ Significant Characteristic

 2004 Microchip Technology Inc. DS21889A-page 15

MCP111/112

3-Lead Plastic Small Outline Transistor (LB) (SC-70)

12°8°12°8°

Mold Draft Angle Bottom

12°8°12°8°

Mold Draft Angle Top

0.400.15.016.006BLead Width

0.250.08.010.003

Lead Thickness

0.410.10.016.004LFoot Length

2.251.80.089.071DOverall Length

1.351.15.053.045E1Molded Package Width

2.401.80.094.071EOverall Width

.0100.00.0004.000A1Standoff

1.000.80.039.031A2Molded Package Thickness

1.100.80.043.031AOverall Height

1.30 BSC.

Outside lead pitch (basic)

0.65 BSC.

Pitch

33Number of Pins

MAXMINMAXMINDimension Limits

MILLIMETERS*INCHESUnits

shall not exceed .005" (0.127mm) per side.

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions

Notes:

JEITA (EIAJ) Equivalent: SC70

Drawing No. C04-104

*Controlling Parameter

p1 D

A A2

.026 BSC.

.051 BSC.

MCP111/112

DS21889A-page 16  2004 Microchip Technology Inc.

3-Lead Plastic Transistor Outline (TO) (TO-92)

432432

Mold Draft Angle Bottom 654654

α0.560.480.41.022.019.016BLead Width 0.510.430.36.020.017.014

Lead Thickness

2.412.292.16.095.090.085RMolded Package Radius 4.954.644.32.195.183.170DOverall Len gth 4.954.714.45.195.186.175E1Overall Width 3.943.623.30.155.143.130ABottom to Package Flat 1.27.050

Pitch 33

Number of Pins MAXNOMMINMAXNOMMINDimen sion Li mits MILLIMETERSINCHES*Units

Tip to Seating Plane L .500 .555 .610 12.70 14.10 15.49

*Controlling Parameter

Mold Draft Angle Top

Notes:

Dimensions D and E1 do not include mold flash or protrusions. Mold flash or protrusions shall not exceed

.010” (0.254mm) per side.

JEDEC Equivalent: TO-92

Drawing No. C04-101

 2004 Microchip Technology Inc. DS21889A-page 17

MCP111/112

5.2 Product Tape and Reel Specifications

FIGURE 5-1: EMBOSSED CARRIER DIMENSIONS (8, 12, 16 AND 24 MM TAPE ONLY)

FIGURE 5-2: 3-LEAD SOT-23/SC70 DEVICE TAPE AND REEL SPECIFICATIONS

Top

Cover

Tape

TABLE 1: CARRIER TAPE/CAVITY DIMENSIONS

Case

Outline Package

Type

Carrier

Dimensions Cavity

Dimensions Output

Quantity

Units

Reel

Diameter in

mm P

mm A0

mm B0

mm K0

NB SOT-23 3L 8 4 3.15 2.77 1.22 3000 180

LB SC-70 3L 8 4 2.4 2.4 1.19 3000 180

User Direction of Feed

Pitch

Standard Reel Component Orientation Reverse Reel Component Orientation

W, Width

of Carrier

Tape

Pin 1

Device

Marking

Device

Marking

MCP111/112

DS21889A-page 18  2004 Microchip Technology Inc.

FIGURE 5-3: TO-92 DEVICES

3 LEAD

TO-92

2 LEAD

TO-92

Device

Marking

Device

Marking

P, Pitch

W, Width of

Carrier Tape

W, Width of

Carrier Tape

Standard Reel

Component Orientation

Reverse Reel

Component Orientation

HH0

 2004 Microchip Technology Inc. DS21889A-page 19

MCP111/112

PRODUCT IDENTIFICATION SYSTEM

To order or obtain information, e.g., on pricing or delivery, refer to the factory or the listed sales office.

Sales and Support

Device: MCP111 : MicroPo w er Voltage Detect or, open-drain

MCP111 T: MicroPo w er Voltage Detector, open-dra i n

(Tape and Ree l)

MCP11 2: Mic roPower Vol tage Detect or, push-pull

MCP11 2T: MicroPo w er Voltage Detect or, push-pull

(Tape and Ree l)

Monitor i ng Optio ns: 195 = 1.90V

240 = 2.32V

270 = 2.63V

290 = 2.90V

300 = 2.93V

315 = 3.08V

450 = 4.38V

475 = 4.63V

Temperature Range: I = -40°C to +85°C (MCP11X-195 only)

E = -40°C to +125°C (Except MCP11X-195 only)

Package: NB = SOT-23B, 3-lead

LB = SC-70, 3-lead

TO = TO-92, 3-lead

PART NO. XXX X

Temperature

Monitoring

Options

Device

Examples:

a) MCP111T-195I/NB: SOT-23B-3,

Tape and Reel,

1.95V MicroPower

Vol tage Dete ctor,

open-drain,

-40°C to +85°C.

b) MCP111T-315E/LB: SC-70-3, Tape and Reel,

3.15V MicroPower

Vol tage Dete ctor,

open-drain,

-40°C to +125 °C .

c) MCP111-300E/TO: TO-92-3, 3.00V

MicroPower Voltage

Detector,

open-drain,

-40°C to +85° C .

a) MCP112T-290E/NB: SOT- 23B-3,

Tape and Reel,

2.90V MicroPower

Vol tage Dete ctor,

push-pull, -40°C to +85°C.

b) MCP112T-475E/LB: SC-70-3, Tape and Reel,

4.75V MicroPower

Vol tage Dete ctor,

push-pull,

-40°C to +125 °C .

c) MCP112-450E/TO: TO-92-3,

4.5V MicroPower Voltage

Detector, push-pull,

-40°C to +85° C .

Range

Package

Tape/Reel

Option

Data Sheets

Products supported by a preliminary Data Sheet may have an errata sheet describing minor operational differences and

recommended workarounds. To determine if an errata sheet exists for a part icular device, please contact one of the following:

1. Your local Microc hip sales office

2. The Microchip Corporate Literature Center U.S. FAX: (480) 792-7277

3. The Microchip Wor ldwide Site (www.micr ochip.com)

Please specify which device, revision of silicon and Dat a Sheet (include Literature #) you are using.

Customer Notification System

MCP111/112

DS21889A-page 20  2004 Microchip Technology Inc.

NOTES:

 2004 Microchip Technology Inc. DS21889A-page 21

Information contained in this publication regarding device

applications and the like is intended through sug gestion only

and may be superseded by updates. It i s your responsibility to

ensure that your application meets with your specifications.

No representation or warranty is given and no liability is

assumed by Microc hip Technology Incorporated with respect

to the accuracy or use of such inf orm ation, or inf ringement of

patents or oth er intellectual property rights arising from such

use or otherwise. Use of Microchip’s products as critical

components in life support systems is not authorized except

with express written approval by Microchip. No licenses are

conveyed, implicitly or otherwise, under any intellectual

property rights.

Trademarks

The Microchip name and logo, the Microchip logo, Accuron,

dsPIC, KEELOQ, microID, MPLAB, PIC, PICmicro,

PICSTA RT, PRO MATE, Po w e rSm a rt , rfPIC, and

SmartShunt are registered trademarks of Microchip

Tec hnology Incor porated in the U.S.A. and other countries.

AmpLab, FilterLab, M XDE V, MXLAB, PICMASTER, SEEV AL,

SmartSensor and The Embedded Control Solutions Company

are registered trademarks of Microchip Technology

Incorporated in the U.S.A.

Analog-for-the-Digital Age, Application Maestro, dsPICDEM,

dsPICDEM.net, dsPICworks, ECAN, ECONOMONITOR,

FanSense, FlexROM, fuzzyLAB, In-Circuit Serial

Programming, ICSP, ICEPIC, Migratable Memory, MPASM,

MPLIB, MPLINK, MPSIM, PICkit, PICDEM, PICDEM.net,

PICLAB, PICtail, PowerCal, PowerInfo, PowerMate,

PowerTool, rfLAB, rfPICDEM, Select Mode, Sm art Serial,

SmartTel and Total Endurance are trademarks of Microchip

Tec hnology Incor porated in the U.S.A. and other countries.

SQTP is a service mark of Microchip Technology Incorporated

in the U.S.A.

All other trademarks mentioned herein are property of their

respective companies.

Printed on recycled paper.

Note the following details of the code protection feature on Microchip devices:

• Microchip products meet the specification cont ained in their particular Microchip Data Sheet.

• Microchip believes that i ts family of products is one of the most secure families of its kind on the market today, when used in the

intended manner and under normal conditions.

• There are dishonest and possibly illegal m et hods used to breach the code protection feature. All of these methods, to our

knowledge, require using the Microchip products in a manner outs ide the operating specifications contained in Microchip’s Data

Sheets. Most likely, the person doing so is engaged in theft of int ellectual property.

• Microchip is willing to work with the customer who is concerned about the integrity of their code.

• Neither Microchip nor any other semiconductor manufacturer can guarantee the security of their code. Code protection does not

mean that we are guaranteeing the product as “unbreakable.”

Code protection is c onstantly evolving. We a t Microchip are committed to continuously improving the c ode protect ion f eatures of our

products. Attempts to break Microchip’ s code protection f eature may be a violati on of t he Digit al Millennium Copyright Act. If such act s

allow unauthorized access to your software or other copyrighted work, you may have a right to sue for relief under that Act.

Microchip received ISO/TS-16949:2002 quality system certification for

its worldwide headquarters, design and wafer fabrication facilities in

Chandler and Tempe, Arizona and Mountain View, California in

October 2003. The Company’s quality system processes and

procedures are for its PICmicro® 8-bit MCUs, KEELOQ® code hopping

devices, Serial EEPROMs, micro peripherals, nonvolat ile memory and

analog products. In addition, Microchip’s quality system for the design

and manufacture of development systems is ISO 9001:2000 certified.

DS21889A-page 22  2004 Microchip Technology Inc.

AMERICAS

Corporate Office

2355 West Chandler Blvd.

Chandler, AZ 85224-6199

Tel: 480-7 92- 72 00

Fax: 480-792-7277

Technical Support: 480-792-7627

Web Address: www.microchip.com

Atlanta

3780 Mansell Road, Suite 130

Alpharetta, GA 30022

Tel: 770 -6 40- 003 4

Fax: 770-640-0307

Boston

2 Lan Drive, Suite 120

Westford, MA 01886

Tel: 978 -6 92- 384 8

Fax: 978-692-3821

Chicago

333 Pierce Road, Suite 180

Itasca, IL 60143

Tel: 630 -2 85- 007 1

Fax: 630-285-0075

Dallas

4570 Westgrove Drive, Suite 160

Addison, TX 7500 1

Tel: 972 -8 18- 742 3

Fax: 972-818-2924

Detroit

Tri-Atria Office Building

32255 Northwestern Highway, Suite 190

Farmington Hills, MI 48334

Tel: 248 -5 38- 225 0

Fax: 248-538-2260

Kokomo

2767 S. Albright Road

Kokomo, IN 46902

Tel: 765 -8 64- 836 0

Fax: 765-864-8387

Los A n ge les

18201 Von Karman, Suite 1090

Irvine, CA 92612

Tel: 949 -2 63- 188 8

Fax: 949-263-1338

San Jose

1300 Terra Bella Avenue

Mountain View, CA 94043

Tel: 650 -2 15- 144 4

Fax: 650-961-0286

Toronto

6285 Northam Drive, Suite 108

Mississ aug a, Ontario L4V 1X5, C ana da

Tel: 905 -6 73- 069 9

Fax: 905-673-6509

ASIA/PACIFIC

Australia

Suite 22, 41 Rawson Street

Epping 2121, NSW

Australia

Tel: 61- 2- 986 8-6 73 3

Fax: 61-2-9868-6755

China - Beijing

Unit 706B

Wan Tai Bei Hai Bldg.

No. 6 Chaoyangmen Bei Str.

Beijing, 100027, China

Tel: 86- 10 -85 282 10 0

Fax: 86-10-85282104

China - Chengdu

Rm. 2401-2402, 24th Floor,

Ming Xing Financial Tower

No. 88 TIDU Street

Chengdu 610016, China

Tel: 86- 28 -86 766 20 0

Fax: 86-28-86766599

China - Fuzhou

Unit 28F, World Trade Plaza

No. 71 Wusi Road

Fuzhou 350001, China

Tel: 86- 59 1-7 503 50 6

Fax: 86-591-7503521

China - Hong Kong SAR

Unit 901-6, Tower 2, Metroplaza

223 Hing Fong Road

Kwai Fong, N.T., Hong Kong

Tel: 852 -2 401 -12 00

Fax: 852-2401-3431

China - Sh a ngha i

Room 701, Bldg. B

Far East International Plaza

No. 317 Xian Xia Road

Shanghai, 200051

Tel: 86- 21 -62 75- 57 00

Fax: 86-21-6275-5060

China - Shenzhen

Rm. 1812, 18/F, Building A, United Plaza

No. 5022 Binhe Road, Futian District

Shenzhen 518033, China

Tel: 86- 75 5-8 290 13 80

Fax: 86-755-8295-1393

China - Sh unde

Room 401, Hongjian Building, No. 2

Fengxiangnan Road, Ronggui Town, Shunde

District, Foshan City, Guangdong 528303, China

Tel: 86-757-28395507 Fax: 86-757-28395571

China - Qingda o

Rm. B505A, Fullhope Plaza,

No. 12 Hong Kong Central Rd.

Qingdao 266071, China

Tel: 86-532-5027355 Fax: 86-532-5027205

India

Divyasree Chambers

1 Floor, Wing A (A3/A4)

No. 11, O’Shaugnessey Road

Bangalo re, 560 025, Indi a

Tel: 91- 80 -22 290 06 1 Fax: 91- 80 -22 29 006 2

Japan

Benex S-1 6F

3-18-20, Shinyokohama

Kohoku-Ku, Yokohama-shi

Kanagawa, 222-0033, Japan

Tel: 81- 45 -47 1- 616 6 Fax: 81-4 5-471-6122

Korea

168-1, Youngbo Bldg. 3 Floor

Samsung-Dong, Kangnam-Ku

Seoul, Korea 135-882

Tel: 82-2-554-7200 Fax: 82-2-558-5932 or

82-2-558-5934

Singapore

200 Middle Road

#07-02 Prime Centre

Singapore, 188980

Tel: 65-6334-8870 Fax: 65-6334-8850

Taiwan

Kaohsiung Branch

30F - 1 No. 8

Min Chuan 2nd Road

Kaohsiung 806, Taiwan

Tel: 886-7-536-4818

Fax: 886-7-536-4803

Taiwan

Taiwan Branch

11F-3, No. 207

Tung Hua North Road

Taipei, 105, Taiwan

Tel: 886-2-2717-7175 Fax: 886-2-2545-0139

EUROPE

Austria

Durisolstrasse 2

A-4600 Wels

Austria

Tel: 43-7242-2244-399

Fax: 43-7242-2244-393

Denmark

Regus Business Centre

Lautrup hoj 1-3

Ballerup DK-2750 Denmark

Tel: 45-4420-9895 Fax: 45-4420-9910

France

Parc d’Activite du Moulin de Massy

43 Rue du Saule Trapu

Batiment A - l er Etage

91300 Massy, France

Tel: 33-1-69-53-63-20

Fax: 33-1-69-30-90-79

Germany

Steinheilstrasse 10

D-85737 Ismaning, Germany

Tel: 49-89-627-144-0

Fax: 49-89-627-144-44

Italy

Via Quasimodo, 12

20025 Legnano (MI)

Milan, Italy

Tel: 39-0331-742611

Fax: 39-0331-466781

Netherlands

Waegenburghtplein 4

NL-5152 JR, Drunen, Netherlands

Tel: 31-416-690399

Fax: 31-416-690340

United Kingdom

505 Eskdale Road

Winnersh Triangle

Wokingham

Berk shire, England RG41 5TU

Tel: 44-118-921-5869

Fax: 44-118-921-5820

05/28/04

WORLDWIDE SALES AND SERVICE