MIL-PRF-19500/500E
w/AMENDMENT 1
12 September 2013
SUPERSEDING
MIL-PRF-19500/500E
24 March 2009
PERFORMANCE SPECIFICATION SHEET
SEMICONDUCTOR DEVICE, DIODE, SILICON, UNIPOLA R TRANSIENT VOLTAGE SUPPRESSOR,
TYPES 1N5555 THROUGH 1N5558, 1N5907, 1N5629A THROUGH 1N5665A, JAN, JANTX, AND JANTXV
This specification is approved for use by all Departments
and Agencies of the Department of Defense.
The requirements for acquiring the product described herein shall consist of
this specification sheet and MIL-PRF-19500.
1. SCOPE
1.1 Scope. This specification covers the performance requirements for 1,500 watt, silicon, transient voltage
suppressor diodes. Three levels of product assurance are provided for each device type as specified in
MIL-PRF-19500.
1.2 Physical dimensions. See figure 1 (DO-13).
1.3 Maximum ratings. Maximum ratings are as shown in maximum test ratings (see 3.6 herein) and as follows:
PPP = 1500 W (see figures 2 and 3) at tp = 1.0 ms.
PM(AV) = 1.0 W (derate at 6.67 mW/°C above TA = +25°C) (see 6.5 herein).
IFSM = 200 A (pk) at tp = 8.3 ms (TA = +25°C).
-55°C ≤ TJ ≤ +175°C (am bien t ) , -55°C ≤ TSTG ≤ +175°C (ambient).
1.4 Primary electrical characteristics at TA = +25°C. Primary ratings are as shown in maximum test ratings (see 3.6).
AMSC N/A FSC 5961
INCH-POUND
* Comments, suggestions, or questions on this document should be addressed to DLA Land and Maritime,
ATTN: VAC, P.O. Box 3990, Columbus, OH 43218-3990, or emailed to Semiconductor@dla.mil . Since contac t
information can change, you may want to verify the currency of this address information using the ASSIST Online
database at https://assist.dla.mil .
The documentation and process conversion
measures necessary to comply with this revision
shall be completed by 12 December 2013.
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MIL-PRF-19500/500E
w/AMENDMENT 1
2
2. APPLICABLE DOCUMENTS
2.1 General. The documents listed in this section are specified in sections 3, 4, or 5 of this specification. This
section does not include documents cited in other sections of this specification or recommended for additional
information or as examples. While every effort has been made to ensure the completeness of this list, document
users are cautioned that they must meet all specified requirements of documents cited in sections 3, 4, or 5 of this
specification, whether or not they are listed.
2.2 Government documents.
2.2.1 Specifications, standards, and handbooks. The following specifications, standards, and handbooks form a
part of this document to the extent specified herein. Unless otherwise spe cif ied, the is sue s of these docum ent s are
those cited in the solicitation or contract.
DEPARTMENT OF DEFENSE SPECIFICATIONS
MIL-PRF-19500 - Semiconductor Devices, General Specification for.
DEPARTMENT OF DEFENSE STANDARDS
MIL-STD-750 - Test Methods for Semiconductor Devices.
* (Copies of these documents are available online at http://quicksearch.dla.mil/ or https://assist.dla.mil/ or f rom the
Standardization Document Order Desk, 700 Robbins Avenue, Building 4D, Philadelphia, PA 19111-5094.)
2.3 Order of prece den ce. Unless otherwise noted herein or in the contract, in the event of a conflict between the
text of this document and the references cited herein, the text of this document takes precedence. Nothing in this
document, however, supersedes applicable laws and regulations unless a specific exemption has been obtained.
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MIL-PRF-19500/500E
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3. REQUIREMENTS
3.1 General. The individual item requirements shall be as specified in MIL-PRF-19500 and as modified herein.
3.2 Qualification. Devices furnished under this specification shall be products that are manufactured by a
manufacturer authorized by the qualifying activity for listing on the applicable qualified manufacturer's list (QML)
before contract award (see 4.2 and 6.3).
3.3 Abbreviations, symbols, and definitions. Abbreviations, symbols, and defi niti on s used herein shall be as
specified in MIL-PRF-19500 and as follows: I(BR) - reverse breakdown current at a specified condition.
3.4 Interfa ce and phy si cal dim ensi ons . The interface and physical dimensions shall be as specified in
MIL-PRF-19500, and on figure 1 (DO-13) herein.
3.4.1 M etall urgi cal ly bonded c onstruction. Metallurgically bonded construction is required. The bonding flow shall
have flow points above 260°C.
3.4.2 Lead finish. Lead finish shall be solderable in accordance with MIL-PRF-19500, MIL-STD-750, and herein.
Where a choice of lead finish is desired, it shall be specified in the acquisition document (see 6.2).
3.5 Marking. Devices shall be marked in accordance with MIL-PRF-19500.
3.6 Electr ica l performance ch aract er is tic s. Unless otherwise specified, the electrical performance characteristics
are as specifi ed in 1.3, 1.4, and table I. Maximum ratings shall be in accordance with columns 6 through 8 of table II.
Primary electrical characteristics are shown in columns 4 and 5 of table II herein.
3.7 Electrical test requirements. The electrical test requirements shall be the subgroups specified in table I,
subgroup 2.
3.8 Workmanship. Semiconductor devices shall be processed in such a manner as to be uniform in quality and
shall be free from other defects that will affect life, serviceability, or appearance.
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MIL-PRF-19500/500E
w/AMENDMENT 1
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Symbol
Dimensions
Notes
Inches
Millimeters
Min
Max
Min
Max
.215
.235
5.46
5.97
.293
.357
7.44
9.07
3
.570
14.48
.045
.100
1.14
2.54
5
.025
.035
0.64
0.89
1.000
1.625
25.40
41.28
4
.188
4.78
4
NOTES:
1. Dimensions are in inches.
2. Millimeters are given for general information only.
3. The major diameter is essentially constant along its length.
4. Within this zone, diameter may vary to allow for lead finishes and irregularities.
5. Dimension to allow for pinch or seal deformation anywhere along tubulation.
6. Lead 1 (cathode) shall be electrically connected to the case.
7. In accordance with ASME Y14.5M, diameters are equivalent to Φx symbology.
FIGURE 1. Physical dimensio ns (DO -13).
DO-13
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MIL-PRF-19500/500E
w/AMENDMENT 1
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4. VERIFICATION
4.1 Clas sifi cat ion of insp ect io ns. The inspection requirements specified herein are classified as follows:
a. Qualification inspection (see 4.2).
b. Screening (see 4.3).
c. Conformance inspection (see 4.4, and tables I, II, III, and IV).
4.1.1 Sampling and inspection. Sampling and inspection shall be in accordance with MIL-PRF-19500, and as
specified herein except, lot accumulation shall be 6-months in lieu of 6-weeks.
4.2 Qualification inspection. Qualification inspection shall be in accordance with MIL-PRF-19500 and as specified
herein.
4.2.1 Gro up E qualifi cat ion. Group E inspection shall be performed for qualification or re-qualification only. In
case qualification was awarded to a prior revision of the specification sheet that did not request the performance of
table IV tests, the tests sp ecified in table IV herein that were not performed in the prior revision shall be performed on
the first inspection lot of this revision to maintain qualification.
4.3 Screening (JANTX and JANTXV levels only). Screening shall be in accordance with table E-IV of
MIL-PRF-19500, and as specified herein. The following measurements shall be made in accordance with table I
herein. Devices that exceed the limits of table I herein sha ll not be acceptable.
Screen
(see table E-IV of
MIL-PRF-19500)
Measurement
JANTX and JANTXV levels
3a T(high) = +175°C
9, 10, 11 Not applicable
12 See 4.3.1
13
Interim electrical, delta, and table I, subgroups 2 and 3, electrical
parameters not applicable for this screen (performed in screen 12).
14 Required
15
For JANTXV devices only – 100 percent inspection will be in
accordance with manufacturer’s internal failure criteria.
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MIL-PRF-19500/500E
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4.3.1 Power burn-in (HTRB) and steady-state opera t io n life test cond iti ons . The test conditions and order of
events shall be as follows:
a. Pulse in accordance with 4.5.2.a herein, 20 times (screening and group B) and 100 times (group C) at
TA = +25°C.
b. Read ID and V(BR) at TA = +25°C, remove defective devices and record the number of failures.
c. Apply the working peak reverse voltage (VWM) (column 4 of table II herein) at TA = +125°C as follows:
(1) For 96 hours (JANTX and JANTXV).
(2) For 340 hours (JANTX and JANTXV) for group B steady-state operation life test.
(3) For 1,000 hours for group C steady-state operation life test.
d. Read ID and V(BR) at TA = +25°C. Devices with ∆ID > 50 percent (100 percent for steady-state operation
life) of the initial reading or 1 µA dc, whichever is greater, or ∆V(BR) > ±2 percent (±5 percent for steady-state
operation lif e) of initial value s hall be con sid ered defe ctiv e. R emov e defec tiv e devi ce s and record the number
of failures.
4.4 Conformance inspection. Conform anc e inspection shall be in accordance with MIL-PRF-19500.
4.4.1 Gro up A inspe ctio n. Group A inspection shall be conducted in accordance with MIL-PRF-19500 and table I
herein. End-point electrical measurements shall be in accordance with table I, subgroup 2 herein.
4.4.2 Gro up B inspe ctio n. Group B inspection shall be conducted in accordance with the conditions specified for
subgroup test ing in table E-VIb (JAN, JANTX, and JANTXV) of MIL-PRF-19500. Electrical measurements (end-
points) and delta requirements shall be in accordance with the applicable steps of table III herein.
4.4.2.1 Group B inspection, table E-VIb of MIL-PRF-19500.
Subgroup Method Conditions
B2 1051 -55°C to +175°C.
B2 4066 10 pulses, see 4.5.2 herein.
B3 1027 See 4.5.1 and 4.5.3.
B5 Not applicable.
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MIL-PRF-19500/500E
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4.4.3 Gro up C inspec tion . Group C inspection shall be conducted in accordance with the conditions specified for
subgroup test ing in table E-VII of MIL-PRF-19500. Electrical measurements (end-points) and delta requirements
shall be in accordance with the applicable steps of table III herein.
4.4.3.1 Group C inspection, table E-VII of MIL-PRF-19500.
Subgroup Method Conditions
C2 2036 Lead tension: Test condition A; weight = 10 pounds (4.54 k g); t = 15 ±3 s.
Lead fatigue: Test condition E; weight = 8 ounces (226.7 g).
C5 Not applicable
C6 1026 See 4.5.1 and 4.5.2 herein.
C7 1018 n = 3, c = 0 or n = 5, c = 1.
C8 Condition for temperature coefficient of breakdown voltage is as follows:
IBR = column 3 of table II herein, T1 = +25°C ±3°C, T2 = T1 +100°C; n = 22, c = 0.
C9 Condition for maximum peak pulse current is as follows: See 4.5.2.b herein,
(20 µs pulse only) 10 pulses; n = 22, c = 0.
4.4.4 Gro up E inspe ctio n. Group E inspection shall be conducted in accordance with the conditions specified for
subgroup testing in appendix E, table E-IX of MIL-PRF-19500 and as specified herein. Electrical measurements
(end-points) shall be in accordance with table I, subgroup 2 herein.
4.5 Methods of inspection. Methods of inspection shall be as specified in the appropriate tables as follows.
4.5.1 Gro up C steady -state operation life test (alternate procedure). When the group B, 340-hour life test is
continued on test to 1,000 hours to satisfy the group C life test requirements, the test shall be performed as given in
4.3.1 herein with the following exception: Step 4.3.1.d shall be repeate d at the end of the 1,000 hour s.
4.5.2 Maximum peak pulse current (IPP). The peak pulse currents specified in column 7 of table II herein shall be
applied while simultaneously maintaining a bias voltage of not less than the applicable voltage specified in column 4
of table II, in the same polarity as the peak pulse current. The clamping voltage (Vc) shall be as specified in 4.5.3.
The peak pulse current shall be applied with a current vs time waveform as follows (1 pulse per minut e maximum):
a. Pulse current shall reach 100 percent of IPP at t ≤ 10 µs and decay to 50 percent of IPP at t ≥ 1 ms for
tp = 1 ms (see figure 4).
b. Pulse current shall reach 100 percent of IPP at t ≤ 8 µs and decay to 50 percent of IPP at t ≥ 20 µs for
tp = 20 µs (see figure 5).
4.5.3 Clamping voltage. The peak pulse clamping voltage shall be measured across the diode in a 1 ms time
interval. The response detector shall demonstrate equipment accuracy of ±3 percent. The peak clamping voltage as
specified in column 6 of table II shall be applicable to the 1 ms pulse of 4.5.2.a only.
*
*
*
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MIL-PRF-19500/500E
w/AMENDMENT 1
8
TABLE I. Group A inspection.
Inspection 1/ MIL-STD-750 Symbol
Limits 2/ Unit
Method
Conditions Min Max
Subgroup 1
Visual and mechanical
examination
2071
Radiography
2076
For JANTX devices only.
Inspection will be in accordance
with manufacturer’s internal failure
criteria, c = 45, n = 0
Subgroup 2
Standby current
4016
DC method, V
R
= V
WM
(column 4 of table II)
I
D
µA dc
Breakdown voltage
4022
t
p
≤ 300 ms, duty cycle ≤ 2
percent, I
BR
= column 3 of table II
V
BR
Column 2
V dc
Subgroup 3
Low temperatur e opera tio n:
T
A
= -55°C
Minimum breakdown voltage
4022
t
p
≤ 300 ms, duty cycle ≤ 2
percent,
I
BR
= column 3 of table II
V
BR
Column 10
V dc
High temperature operation:
TA = 125°C
Reverse current leakage
4016
DC method, V R = V
WM
(column 4 of table II)
I
D2
µA dc
Subgroup 4
Clamping voltage maximum
t
p
= 1.0 ms (see 4.5.2.a), I
PP
=
column 7 of table II, (pulsed)
(see 4.5.3)
V
C
V (pk)
Forward voltage
4011
I
FM
= 100 A (pk); t
p
= 8. 3 ms
(max), duty cycle = 4 pulses p er
minute (max)
V
FM
V (pk)
Subgroup 5
Not applicable
See footnotes at end of table.
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MIL-PRF-19500/500E
w/AMENDMENT 1
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TABLE I. Group A inspection - Continued.
Inspection 1/ MIL-STD-750 Symbol
Limits 2/ Unit
Method
Conditions Min Max
Subgroup 6
Forward surge current
End-point electrical
measurements
Subgroup 7
Not applicable
4066
IFSM = 200 A (pk), one pulse,
half sine wave (8.3 ms), IF = 0;
VWM = 0; TA = 25°C
See table III, step s 1 and 2
1/ For sampling plan, see MIL-PRF-19500.
2/ Column references are to table I I.
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TABLE II. Characteristics and ratings.
Col 1
Col 2
Col 3
Col 4
Col 5
Col 6
Col 7
Col 8
Col 9
Col 10
Col 11
Type
Breakdown
voltage
VBR at IBR
Test
current
IBR
Working peak
reverse
voltage
VWM
Maximum
standby
current
ID
Maximum
clamping
voltage
VC at IPP
Maximum peak
pulse current
I
PP
Maximum
temperature
Coefficient
of VBR
αVBR
Max
imum
standby
current
ID
TA =
+125°C
Minimum
Breakdown
voltage at
IBR
TA = -55°C
Breakdown
current IBR
maximum
dc current
TA = +25°C
tp = 20 µs
t
r
= 8 µs
tp = 1 ms
t
r
= 10 µs
V dc
Min
V dc
Max
mA dc
V (pk)
µA dc
V (pk)
A (pk)
A (pk)
%/°C
µA dc
V dc
mA dc
1N5907
6.00
6.75
1
5.00
300
10.0
1,000
150.0
.057
1,500
5.63
140.0
1N5629A
6.45
7.14
10
5.80
1,000
10.5
810
143.0
.057
4,000
6.05
140.0
1N5630A
7.13
7.88
10
6.40
500
11.3
750
132.0
.061
2,000
6.66
125.0
1N5631A
7.79
8.61
10
7.02
200
12.1
700
124.0
.065
1,000
7.24
115.0
1N5632A
8.65
9.55
1
7.78
50
13.4
630
112.0
.068
400
8.01
104.0
1N5633A
9.50
10.50
1
8.55
10
14.5
585
103.5
.073
200
8.75
95.0
1N5634A
10.50
11.60
1
9.40
5
15.6
545
96.0
.075
200
9.65
86.0
1N5635A
11.40
12.60
1
10.20
5
16.7
510
90.0
.078
200
10.40
73.0
1N5636A
12.40
13.70
1
11.10
5
18.2
465
82.0
.081
200
11.30
70.0
1N5637A
14.30
15.80
1
12.80
5
21.2
400
71.0
.084
200
13.00
63.0
1N5638A
15.20
16.80
1
13.60
5
22.5
375
67.0
.086
200
13.70
59.0
1N5639A
17.10
18.90
1
15.30
5
25.2
335
59.5
.088
200
15.40
53.0
1N5640A
19.00
21.00
1
17.10
5
27.7
305
54.0
.090
200
17.10
47.0
1N5641A
20.90
23.10
1
18.80
5
30.6
275
49.0
.092
200
18.80
43.0
1N5642A
22.80
25.20
1
20.50
5
33.2
255
45.0
.094
200
20.50
39.0
1N5643A
25.70
28.40
1
23.10
5
37.5
225
40.0
.096
200
23.00
35.0
1N5644A
28.50
31.50
1
25.60
5
41.4
205
36.0
.097
200
23.50
31.0
1N5645A
31.40
34.70
1
28.20
5
45.7
185
33.0
.098
200
28.00
28.0
1N5555
33.00
1
30.50
5
47.5
193
32.0
.093
200
30.20
27.0
1N5646A
34.20
37.80
1
30.80
5
49.9
170
30.0
.099
200
30.50
26.0
MIL-PRF-19500/500E
w/AMENDME NT 1
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MIL-PRF-19500/500D
Col 1
Col 2
Col 3
Col 4
Col 5
Col 6
Col 7
Col 8
Col 9
Col 10
Col 11
Type
Breakdown
Voltage
VBR at IBR
Test
current
IBR
Working peak
reverse
voltage
VWM
Maximum
standby
current
ID
Maximum
clamping
voltage
VC at IPP
Maximum peak
pulse current
I
PP
Maximum
temperature
coefficient
of VBR
αVBR
Max
imum
standby
current
ID
TA =
+125°C
Minimum
breakdown
voltage at
IBR
TA = -55°C
Breakdown
current IBR
maximum
dc current
TA = +25°C
tp = 20 µs
t
r
= 8 µs
tp = 1 ms
t
r
= 10 µs
V dc
Min
V dc
Max
mA dc
V (pk)
µA dc
V (pk)
A (pk)
A (pk)
%/°C
µA dc
V dc
mA dc
1N5647A
37.10
41.00
1
33.30
5
53.9
155
28.0
.100
200
33.10
24.0
1N5648A
40.90
45.20
1
36.80
5
59.3
145
25.3
.101
200
36.40
22.0
1N5556
43.70
1
40.30
5
63.5
136
24.0
.094
200
40.00
21.0
1N5649A
44.70
49.40
1
40.20
5
64.8
130
23.2
.101
200
39.80
20.0
1N5650A
48.50
53.60
1
43.60
5
70.1
120
21.4
.102
200
43.10
18.0
1N5651A
53.20
58.80
1
47.80
5
77.0
110
19.5
.103
200
47.30
17.0
1N5557
54.00
1
49.00
5
78.5
116
19.0
.096
200
48.50
16.0
1N5652A
58.90
65.10
1
53.00
5
85.0
100
17.7
.104
200
52.30
15.0
1N5653A
64.60
71.40
1
58.10
5
92.0
90
16.3
.104
200
57.30
14.0
1N5654A
71.30
78.80
1
64.10
5
103.0
82
14.6
.105
200
63.20
12.0
1N5655A
77.90
86.10
1
70.10
5
113.0
75
13.3
.105
200
69.00
11.0
1N5656A
86.50
95.50
1
77.80
5
125.0
68
12.0
.106
200
76.50
10.0
1N5657A
95.00
105.00
1
85.50
5
137.0
62
11.0
.106
200
84.10
9.5
1N5658A
105.00
116.00
1
94.00
5
152.0
55
9.9
.107
200
92.80
8.5
1N5659A
114.00
126.00
1
102.00
5
165.0
50
9.1
.107
200
100.00
7.5
1N5660A
124.00
137.00
1
111.00
5
179.0
47
8.4
.107
200
109.00
7.0
1N5661A
143.00
158.00
1
128.00
5
207.0
40
7.2
.108
200
126.00
6.0
1N5662A
152.00
168.00
1
136.00
5
219.0
38
6.8
.108
200
134.00
5.8
1N5663A
162.00
179.00
1
145.00
5
234.0
36
6.4
.108
200
143.00
5.5
1N5664A
171.00
189.00
1
154.00
5
246.0
34
6.1
.108
200
151.00
5.0
1N5665A
190.00
210.00
1
171.00
5
274.0
30
5.5
.108
200
167.00
4.5
1N5558
191.00
1
175.00
5
265.0
33
5.7
.100
200
172.00
4.5
TABLE II. Characteristics and ratings - Continued.
11
MIL-PRF-19500/500E
w/AMENDMENT 1
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TABLE III. Groups B and C electrical and delta measurements. 1/ 2/ 3/
Step Inspection MIL-STD-750 Symbol Limits 4/ Unit
Method Conditions Min Max
1.
Standby current
4016
DC method, VR = VWM
(column 4 of table II)
ID
Column 5
µA dc
2.
Breakdown voltage
4022
tp ≤ 300 ms, duty cycle ≤ 2
percent, IBR = column 3 of
table II
VBR
Column 2
Column 2
V dc
3.
Standby current
4016
DC method; VR = VWM
(column 4 of table II)
∆ID
100 percent of
initial reading or
20 percent of
column 5 of table
II, whichever is
greater.
4.
Breakdown voltage
4022
tp ≤ 300 ms, duty cycle ≤ 2
percent, IBR = column 3 of
table II
∆VBR
± 5 percent of
initial value
5.
Clamping voltage
tp = 1.0 ms (see 4.5.2.a);
I
PP
= column 7 of table II
VC
Column 6
V (pk)
1/ The electrical measurements for table E-VIb (JAN, JANTX, and J ANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 2, see table III herein, steps 1 and 2.
b. Subgroup 6, see table III her ein, steps 1, 2, 3, and 4.
2/ The electrical measurements for table E-VII (JAN, JANTX, and JANTXV) of MIL-PRF-19500 are as follows:
a. Subgroup 2 and 3, see table III herein, and steps 1 and 2.
b. Subgroup 9, see table III herein, steps 1 and 2 for all levels.
3/ Column references are to table II.
4/ Devices which exceed the table I limits for this test shall not be accepted.
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MIL-PRF-19500/500E
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TABLE IV. Group E inspection (all quality levels) for qualification only.
Inspection MIL-STD-750 Sampling plan
Method Conditions
Subgroup 1
n = 45, c = 0
Temperature cycling
Electrical measurements
500 cycles, condition C, -55°C to +175°C.
See table III, steps 1, 2, 3, and 4.
Subgroup 2
n = 22, c = 0
Life test
Electrical measurements
1,000 hours. See 4.3.1
See table III, steps 1, 2, 3, and 4.
Subgroups 4 and 5
Not applicable
Subgroup 6
Peak pulse curren t
See 4.5.2. IPP shall be characterized by the supplier
and this data shall be available to the government.
Test shall be performed on each low and high voltage
device for each structurally identical grouping. Test to
failure.
Electrical measurements
See table III, steps 1, 2, 3, and 4.
Subgroup 7
n = 45, c = 0
Soldering heat
1 cycle.
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MIL-PRF-19500/500E
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FIGURE 2. Derating curve.
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MIL-PRF-19500/500E
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FIGURE 3. Peak pulse power versus pulse time.
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MIL-PRF-19500/500E
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NOTE: Pulse time duration is defined as that point wher e the pulse cur rent dec ay s
to 50 percent of IPP. (Rise time to 100 percent of IPP = 10 µs).
FIGURE 4. Current impulse waveform (see 4.5.2.a herein).
NOTE: Pulse time duration is defined as that point where the pulse current decays to
50 percent of IPP. (Rise time to 100 percent of IPP = 8 µs).
FIGURE 5. Current impulse waveform (see 4.5.2.b herein).
TIME (t) IN MILLISECONDS
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MIL-PRF-19500/500E
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5. PACKAGING
5.1 Packaging. For acquisition purposes, the packaging requirements shall be as specified in the contract or order
(see 6.2). When packaging of materiel is to be performed by DoD or in-house contractor personnel, these personnel
need to contact the responsible packaging activity to ascertain packaging requirements. Packaging requirements are
maintained by the Inventory Control Point's packaging activities within the Military Service or Defense Agency, or
within the Military Service’s system commands. Packaging data retrieval is available from the managing Military
Department' s or Defense Agency's automated packaging files, CD-ROM products, or by contacting the responsible
packaging activity.
6. NOTES
(This section contains information of a general or explanatory nature that may be helpful, but is not mandatory.
The notes specified in MIL-PRF-19500 are applicable to this specification.)
6.1 Inten ded use. Semiconductors conforming to this specification are intended for original equipment design
applications and logistic support of existing equipment.
6.2 Acqui sit ion requ irements. Acquisition documents should specify the following:
a. Title, number, and date of this specification.
b. Packaging requirements (see 5.1).
c. Lead finish (see 3.4.2).
d. Product assurance level and type designator.
e. Destructive physical analysis when requested.
* 6.3 Qualification. With respect to products requiring qualification, awards will be made only for products which are,
at the time of award of contract, qualified for inclusion in Qualified Manufacturers List (QML 19500) whether or not
such products have actually been so listed by that date. The attention of the contractors is called to these
requirements, and manufacturers are urged to arrange to have the products that they propose to offer to the Federal
Government tested for qualification in order that they may be eligible to be awarded contracts or orders for the
products covered by this specification. Information pertaining to qualification of products may be obtained from DLA
Land and Maritime, ATTN: VQE, P.O. Box 3990, Columbus, OH 43218-3990 or e-mail vqe.chief@dla.mil . An online
listing of products qualified to this specification may be found in the Qualified Products Database (QPD) at
https://assist.dla.mil .
6.4 Substitution information. Type numbers 1N5555 through 1N5558 were previously covered by
MIL-PRF-19500/434.
6.5 Steady state power rating. This rating is not relevant for most applications.
* 6.6 Amendment notations. The margins of this specification are marked with asterisks to indicate modifications
generated by this amendment. This was done as a convenience only and the Government assumes no liability
whatsoever for any inaccuracies in these notations. Bidders and contractors are cautioned to evaluate the
requirements of this document based on the entire content irrespective of the marginal notations and relationship to
the last previous issue.
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MIL-PRF-19500/500E
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Custodians: Preparing activity:
Army - CR DLA - CC
Navy - EC
Air Force - 85 (Project 5961-2013-071)
NASA - NA
DLA - CC
Review activities:
Army - AR, MI, SM
Navy - AS, MC
Air Force - 19, 99
* NOTE: The activities listed above were interested in this document as of the date of this document. Since
organizations and responsibilities can change, you should verify the currency of the information above using the
ASSIST Online database at https://assist.dla.mil .
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