1
Transistor
2SB0710, 2SB0710A (2SB710, 2SB710A)
Silicon PNP epitaxial planer type
For general amplification
Complementary to 2SD0602 (2SD602) and 2SD0602A (2SD602A)
■Features
●Large collector current IC.
●Mini type package, allowing downsizing of the equipment and
automatic insertion through the tape packing and the magazine
packing.
■Absolute Maximum Ratings (Ta=25˚C)
Parameter
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
Symbol
VCBO
VCEO
VEBO
ICP
IC
PC
Tj
Tstg
Ratings
–30
–60
–25
–50
–5
–1
– 0.5
200
150
–55 ~ +150
Unit
V
V
V
A
A
mW
˚C
˚C
2SB0710
2SB0710A
2SB0710
2SB0710A
■Electrical Characteristics (Ta=25˚C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
ICBO
VCBO
VCEO
VEBO
hFE1*1
hFE2
VCE(sat)
VBE(sat)
fT
Cob
Conditions
VCB = –20V, IE = 0
IC = –10µA, IE = 0
IC = –10mA, IB = 0
IE = –10µA, IC = 0
VCE = –10V, IC = –150mA*2
VCE = –10V, IC = –500mA*2
IC = –300mA, IB = –30mA*2
IC = –300mA, IB = –30mA*2
V
CB
= –10V, I
E
= 50mA, f = 200MHz
VCB = –10V, IE = 0, f = 1MHz
min
–30
–60
–25
–50
–5
85
40
typ
– 0.35
–1.1
200
6
max
–0.1
340
– 0.6
–1.5
15
Unit
µA
V
V
V
V
V
MHz
pF
*1hFE1 Rank classification
Rank Q R S
hFE1 85 ~ 170 120 ~ 240 170 ~ 340
2SB0710 CQ CR CS
2SB0710A DQ DR DS
Marking symbol : C(2SB0710)
D(2SB0710A)
Unit: mm
1:Base JEDEC:TO–236
2:Emitter EIAJ:SC–59
3:Collector Mini Type Package
2.8
+0.2
–0.3
1.5
+0.25
–0.05
0.65±0.15 0.65±0.15
3
1
2
0.950.95
1.9±0.2
0.4
+0.1
–0.05
1.1
+0.2
–0.1
0.8
0.4±0.2
0 to 0.1
0.16
+0.1
–0.06
1.45
0.1 to 0.3
2.9
+0.2
–0.05
Marking
Symbol
2SB0710
2SB0710A
2SB0710
2SB0710A
*2 Pulse measurement
Note.) The Part numbers in the Parenthesis show
conventional part number.
2
Transistor 2SB0710, 2SB0710A
0 16040 12080 14020 10060
0
240
200
160
120
80
40
Ambient temperature Ta (˚C)
Collector power dissipation P
C
(mW)
0–12–10–8–2–6–4
0
–1200
–1000
–800
–600
–400
–200
Ta=25˚C
–9mA
–8mA
–7mA
–6mA
–5mA
–4mA
–3mA
–2mA
–1mA
I
B
=–10mA
Collector to emitter voltage VCE (V)
Collector current IC (mA)
0–10–8–2–6–4
0
–800
–600
–200
–500
–700
–400
–100
–300
VCE=–10V
Ta=25˚C
Base current IB (mA)
Collector current I
C
(mA)
–1–10 –100 –1000–3–30 –300
– 0.001
– 0.003
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10 IC/IB=10
25˚C
–25˚C
Ta=75˚C
Collector current IC (mA)
Collector to emitter saturation voltage V
CE(sat)
(V)
–1–10 –100 –1000–3–30 –300
– 0.01
– 0.03
– 0.1
– 0.3
–1
–3
–10
–30
–100 I
C
/I
B
=10
Ta=–25˚C
25˚C
75˚C
Collector current IC (mA)
Base to emitter saturation voltage V
BE(sat)
(V)
– 0.01
– 0.1 –1–10
– 0.03
– 0.3 –3
0
600
500
400
300
200
100
VCE=–10V
Ta=75˚C
25˚C
–25˚C
Collector current IC (A)
Forward current transfer ratio h
FE
1 3 10 30 100
0
240
200
160
120
80
40
VCB=–10V
Ta=25˚C
Emitter current IE (mA)
Transition frequency f
T
(MHz)
–1–3–10 –30 –100
0
24
20
16
12
8
4
I
E
=0
f=1MHz
Ta=25˚C
Collector to base voltage VCB (V)
Collector output capacitance Cob (pF)
1 10 100 10003 30 300
0
–120
–100
–80
–60
–40
–20
IC=–2mA
Ta=25˚C
2SB0710A
2SB0710
Base to emitter resistance RBE (kΩ)
Collector to emitter voltage V
CER
(V)
PC — Ta IC — VCE IC — IB
VCE(sat) — ICVBE(sat) — IChFE — IC
fT — IECob — VCB VCER — RBE
Please read the following notes before using the datasheets
A. These materials are intended as a reference to assist customers with the selection of Panasonic
semiconductor products best suited to their applications.
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2001 MAR
