PESD12VV1BL,315 - NEXPERIA

PESD12VV1BL

Very low capacitance bidirectional ESD protection diode

14 October 2016 Product data sheet

1. General description

Very low capacitance bidirectional ElectroStatic Discharge (ESD) protection diode designed to

protect one signal line from the damage caused by ESD and other transients. The device is housed

in a leadless ultra small DFN1006-2 (SOD882) Surface-Mounted Device (SMD) plastic package.

2. Features and benefits

•Bidirectional ESD protection of one line

•Low diode capacitance Cd = 17 pF

•Rated peak pulse power: PPPM = 290 W

•Ultra low leakage current IRM < 1 nA

•ESD protection up to 30 kV

•IEC 61000-4-2; level 4 (ESD)

•IEC 61000-4-5 (surge); IPPM = 7.8 A

•AEC-Q101 qualified

3. Applications

•Computers and peripherals

•Audio and video equipment

•Cellular handsets and accessories

•Portable electronics

•Communication systems

4. Quick reference data

Table 1. Quick reference data

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff

voltage

Tamb = 25 °C - - 12 V

Cddiode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 17 25 pF

NXP Semiconductors PESD12VV1BL

Very low capacitance bidirectional ESD protection diode

Product data sheet 14 October 2016 2 / 11

5. Pinning information

Table 2. Pinning information

Pin Symbol Description Simplified outline Graphic symbol

1 K cathode

2 K cathode

Transparent

top view

DFN1006-2 (SOD882)

sym045

6. Ordering information

Table 3. Ordering information

PackageType number

Name Description Version

PESD12VV1BL DFN1006-2 DFN1006-2: leadless ultra small plastic package; 2 terminals SOD882

7. Marking

Table 4. Marking codes

Type number Marking code

PESD12VV1BL MW

8. Limiting values

Table 5. Limiting values

In accordance with the Absolute Maximum Rating System (IEC 60134).

Symbol Parameter Conditions Min Max Unit

PPPM rated peak pulse power [1] - 290 W

IPPM rated peak pulse current tp = 8/20 µs [1] - 7.8 A

Tjjunction temperature - 150 °C

Tamb ambient temperature -55 150 °C

Tstg storage temperature -65 150 °C

ESD maximum ratings

IEC 61000-4-2; contact discharge [2] - 30 kV

machine model - 400 V

VESD electrostatic discharge

voltage

human body model (MIL-STD-883) - 10 kV

[1] Device stressed with non-repetitive current pulses (8/20 µs exponential decay waveform according to IEC 61000-4-5 and IEC

61643-321).

[2] Device stressed with ten non-repetitive ESD pulses.

NXP Semiconductors PESD12VV1BL

Very low capacitance bidirectional ESD protection diode

Product data sheet 14 October 2016 3 / 11

tp (µs)

0 403010 20

001aaa630

120

IPP

(%)

e-t

100 % IPP; 8 µs

50 % IPP; 20 µs

Fig. 1. 8/20 µs pulse waveform according to

IEC 61000-4-5 and IEC 61643-321

001aaa631

IPP

100 %

90 %

30 ns

60 ns

10 %

tr= 0.6 ns to 1 ns

Fig. 2. ESD pulse waveform according to

IEC 61000-4-2

9. Characteristics

Table 6. Characteristics

Symbol Parameter Conditions Min Typ Max Unit

VRWM reverse standoff

voltage

Tamb = 25 °C - - 12 V

VBR breakdown voltage IR = 5 mA; Tamb = 25 °C 14.6 15.7 16.8 V

IRM reverse leakage

current

VRWM = 12 V; Tamb = 25 °C - 1 10 nA

Cddiode capacitance f = 1 MHz; VR = 0 V; Tamb = 25 °C - 17 25 pF

IPP = 1 A; Tamb = 25 °C [1] - - 22 VVCL clamping voltage

IPPM = 7.8 A; Tamb = 25 °C [1] - - 38 V

Rdyn dynamic resistance IR = 10 A; Tamb = 25 °C [2] - 0.7 - Ω

[1] Device stressed with 8/20 μs exponential decay waveform according to IEC 61000-4-5 and IEC 61643-321.

[2] Non-repetitive current pulse, Transmission Line Pulse (TLP) tp = 100 ns; square pulse; ANSI / ESD STM5.5.1-2008.

NXP Semiconductors PESD12VV1BL

Very low capacitance bidirectional ESD protection diode

Product data sheet 14 October 2016 4 / 11

aaa-002723

102

103

PPP

(W)

tp (s)

10-4 10-2

10-3

Tamb = 25 °C

Fig. 3. Rated peak pulse power as a function of square

pulse duration; maximum values

aaa-002724

0 2 4 6 8 10 12

VR (V)

(pF)

f = 1 MHz; Tamb = 25 °C

Fig. 4. Diode capacitance as a function of reverse

voltage; typical values

006aab325

-VCL -VBR -VRWM

VCL

VBR

VRWM

-IRM

IRM

-IR

-IPP

IPP

IPPM

-IPPM

Fig. 5. V-I characteristics for a bidirectional ESD protection diode

NXP Semiconductors PESD12VV1BL

Very low capacitance bidirectional ESD protection diode

Product data sheet 14 October 2016 5 / 11

50 Ω

DUT

(DEVICE

UNDER

TEST)

GND

450 Ω

RG 223/U

50 Ω coax

ESD TESTER

IEC 61000-4-2 network

Cs = 150 pF; Rd = 330 Ω

4 GHz DIGITAL

OSCILLOSCOPE

10x

ATTENUATOR

unclamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

unclamped -8 kV ESD pulse waveform

(IEC 61000-4-2 network)

GND

clamped +8 kV ESD pulse waveform

(IEC 61000-4-2 network)

aaa-002726

GND

clamped -8 kV ESD pulse waveform

(IEC 61000-4-2 network)

vertical scale = 2 kV/div

horizontal scale = 10 ns/div

vertical scale = 2 kV/div

horizontal scale = 10 ns/div

vertical scale = 20 V/div

horizontal scale = 50 ns/div

vertical scale = 20 V/div

horizontal scale = 50 ns/div

Fig. 6. ESD clamping test setup and waveforms

NXP Semiconductors PESD12VV1BL

Very low capacitance bidirectional ESD protection diode

Product data sheet 14 October 2016 6 / 11

10. Application information

The device is designed for the protection of one bidirectional data line from surge pulses and ESD

damage. The device is suitable on lines where the signal polarities are both positive and negative

with respect to ground.

aaa-002737

ESD protection diode

GND

line to be protected

Fig. 7. Application diagram

Circuit board layout and protection device placement

Circuit board layout is critical for the suppression of ESD, Electrical Fast Transient (EFT) and surge

transients. The following guidelines are recommended:

1. Place the device as close to the input terminal or connector as possible.

2. Minimize the path length between the device and the protected line.

3. Keep parallel signal paths to a minimum.

4. Avoid running protected conductors in parallel with unprotected conductors.

5. Minimize all Printed-Circuit Board (PCB) conductive loops including power and ground loops.

6. Minimize the length of the transient return path to ground.

7. Avoid using shared transient return paths to a common ground point.

8. Use ground planes whenever possible. For multilayer PCBs, use ground vias.

11. Test information

Quality information

This product has been qualified in accordance with the Automotive Electronics Council (AEC)

standard Q101 - Stress test qualification for discrete semiconductors, and is suitable for use in

automotive applications.

NXP Semiconductors PESD12VV1BL

Very low capacitance bidirectional ESD protection diode

Product data sheet 14 October 2016 7 / 11

12. Package outline

03-04-17Dimensions in mm

0.55

0.47

0.65

0.62

0.55

0.50

0.46

cathode marking on top side (if applicable)

1.02

0.95

0.30

0.22

0.30

0.22

Fig. 8. Package outline DFN1006-2 (SOD882)

13. Soldering

solder lands

solder resist

occupied area

solder paste

sod882_fr

0.9

0.3

(2×)

R0.05 (8×)

0.6

(2×)

0.7

(2×)

0.4

(2×)

1.3

0.5

(2×)

0.8

(2×)

0.7

Dimensions in mm

Fig. 9. Reflow soldering footprint for DFN1006-2 (SOD882)

NXP Semiconductors PESD12VV1BL

Very low capacitance bidirectional ESD protection diode

Product data sheet 14 October 2016 8 / 11

14. Revision history

Table 7. Revision history

Data sheet ID Release date Data sheet status Change notice Supersedes

PESD12VV1BL v.3 20161014 Product data sheet - PESD12VV1BL v.2

Modifications: •Deleted section "Packing information"

PESD12VV1BL v.2 20130318 Product data sheet - PESD12VV1BL v.1

PESD12VV1BL v.1 20120403 Product data sheet - -

NXP Semiconductors PESD12VV1BL

Very low capacitance bidirectional ESD protection diode

Product data sheet 14 October 2016 9 / 11

15. Legal information

Data sheet status

Document

status [1][2]

Product

status [3]

Definition

Objective

[short] data

sheet

Development This document contains data from

the objective specification for product

development.

Preliminary

[short] data

sheet

Qualification This document contains data from the

preliminary specification.

Product

[short] data

sheet

Production This document contains the product

specification.

[1] Please consult the most recently issued document before initiating or

completing a design.

[2] The term 'short data sheet' is explained in section "Definitions".

[3] The product status of device(s) described in this document may have

changed since this document was published and may differ in case of

multiple devices. The latest product status information is available on

the Internet at URL http://www.nxp.com.

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Limiting values — Stress above one or more limiting values (as defined in

the Absolute Maximum Ratings System of IEC 60134) will cause permanent

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Characteristics sections of this document is not warranted. Constant or

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NXP Semiconductors PESD12VV1BL

Very low capacitance bidirectional ESD protection diode

Product data sheet 14 October 2016 10 / 11

Trademarks

Notice: All referenced brands, product names, service names and

trademarks are the property of their respective owners.

Bitsound, CoolFlux, CoReUse, DESFire, FabKey, GreenChip,

HiPerSmart, HITAG, I²C-bus logo, ICODE, I-CODE, ITEC, MIFARE,

MIFARE Plus, MIFARE Ultralight, SmartXA, STARplug, TOPFET,

TrenchMOS, TriMedia and UCODE — are trademarks of NXP

Semiconductors N.V.

HD Radio and HD Radio logo — are trademarks of iBiquity Digital

Corporation.

NXP Semiconductors PESD12VV1BL

Very low capacitance bidirectional ESD protection diode

Product data sheet 14 October 2016 11 / 11

16. Contents

1. General description......................................................1

2. Features and benefits.................................................. 1

3. Applications.................................................................. 1

4. Quick reference data....................................................1

5. Pinning information......................................................2

6. Ordering information....................................................2

7. Marking.......................................................................... 2

8. Limiting values............................................................. 2

9. Characteristics.............................................................. 3

10. Application information............................................. 6

11. Test information......................................................... 6

12. Package outline.......................................................... 7

13. Soldering..................................................................... 7

14. Revision history..........................................................8

15. Legal information....................................................... 9

For more information, please visit: http://www.nxp.com

For sales office addresses, please send an email to: salesaddresses@nxp.com

Date of release: 14 October 2016