BTN7930
High Current PN Half Bridge
NovalithIC™
Data Sheet, Rev. 1.1, Nov. 2007
Automotive Power
Data Sheet 2 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
1 Overview . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
2 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.1 Block Diagram . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
2.2 Terms . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
3 Pin Configuration . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.1 Pin Assignment . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
3.2 Pin Definitions and Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
4 General Product Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.1 Absolute Maximum Ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
4.2 Functional Range . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
4.3 Thermal Resistance . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
5 Block Description and Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.1 Supply Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9
5.2 Power Stages . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10
5.2.1 Power Stages - Static Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
5.2.2 Switching Times . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12
5.2.3 Power Stages - Dynamic Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
5.3 Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.1 Overvoltage Lock Out . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.2 Undervoltage Shut Down . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.3 Overtemperature Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.4 Current Limitation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
5.3.5 Short Circuit Protection . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
5.3.6 Electrical Characteristics - Protection Functions . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
5.4 Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.1 Input Circuit . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.2 Dead Time Generation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.3 Adjustable Slew Rate . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.4 Status Flag Diagnosis With Current Sense Capability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 19
5.4.5 Truth Table . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20
5.4.6 Electrical Characteristics - Control and Diagnostics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 21
6 Application Information . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.1 Application Example . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.2 Layout Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 22
6.3 Half-bridge Configuration Considerations . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 23
7 Package Outlines . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
7.1 PG-TO263-7-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 24
7.2 PG-TO220-7-11 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25
7.3 PG-TO220-7-12 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 26
8 Revision History . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 27
Table of Contents
PG-TO263-7-1
PG-TO220-7-11
PG-TO220-7-12
Type Package Marking
BTN7930B PG-TO263-7-1 BTN7930B
BTN7930P PG-TO220-7-11 BTN7930P
BTN7930S PG-TO220-7-12 BTN7930S
Data Sheet 3 Rev. 1.1, 2007-11-21
BTN7930B
BTN7930P
BTN7930S
High Current PN Half Bridge
NovalithIC™
1Overview
Features
• Path resistance of max. 55 mΩ @ 150 °C (typ. 28 mΩ @ 25 °C)
High Side: max. 17 mΩ @ 150 °C (typ. 10 mΩ @ 25 °C)
Low Side: max. 38 mΩ @ 150 °C (typ. 18 mΩ @ 25 °C)
(for BTN7930B (SMD))
• Low quiescent current of typ. 7 μA @ 25 °C
• PWM capability of up to 25 kHz combined with active freewheeling
• Switched mode current limitation for reduced power dissipation
in overcurrent
• Current limitation level of 20 A min. / 32 A typ. (low side)
• Status flag diagnosis with current sense capability
• Overtemperature shut down with latch behaviour
• Overvoltage lock out
• Undervoltage shut down
• Driver circuit with logic level inputs
• Adjustable slew rates for optimized EMI
• Green Product (RoHS compliant)
• AEC Qualified
Description
The BTN7930 is a integrated high current half bridge for motor
drive applications. It is part of the NovalithIC™ family containing one
p-channel highside MOSFET and one n-channel lowside MOSFET with
an integrated driver IC in one package. Due to the p-channel highside
switch the need for a charge pump is eliminated thus minimizing EMI.
Interfacing to a microcontroller is made easy by the integrated driver IC
which features logic level inputs, diagnosis with current sense, slew rate
adjustment, dead time generation and protection against over-
temperature, overvoltage, undervoltage, overcurrent and short circuit.
The BTN7930 provides a cost optimized solution for protected high
current PWM motor drives with very low board space consumption.
Data Sheet 4 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Diagram
2 Block Diagram
The BTN7930 is part of the NovalithIC™ family containing three separate chips in one package: One p-channel
highside MOSFET and one n-channel lowside MOSFET together with a driver IC, forming a integrated high current
half-bridge. All three chips are mounted on one common lead frame, using the chip on chip and chip by chip
technology. The power switches utilize vertical MOS technologies to ensure optimum on state resistance. Due to
the p-channel highside switch the need for a charge pump is eliminated thus minimizing EMI. Interfacing to a
microcontroller is made easy by the integrated driver IC which features logic level inputs, diagnosis with current
sense, slew rate adjustment, dead time generation and protection against overtemperature, overvoltage,
undervoltage, overcurrent and short circuit. The BTN7930 can be combined with other BTN7930 to form H-bridge
and 3-phase drive configurations.
2.1 Block Diagram
Figure 1 Block Diagram
2.2 Terms
Following figure shows the terms used in this data sheet.
Figure 2 Terms
IS
SR
INH
IN
GND
OUT
VS
Gate Driver
HS
Slewrate
Adjustment
Digital Logic
Overvolt.
detection
Overtemp.
detection
Overcurr.
Detection
LS
Overcurr.
Detection
HS
Current
Sense
Undervolt.
detection
Gate Driver
LS
LS off HS off
I
IN
V
IN
OUT
I
INH
V
INH
V
SR
I
SR
V
IS
I
IS
V
S
I
OUT
, I
L
V
OUT
V
DS (HS )
GND
I
GND,
I
D(LS)
I
VS
, -I
D(HS)
IN
INH
SR
IS
VS
V
SD(LS )
Data Sheet 5 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Pin Configuration
3 Pin Configuration
3.1 Pin Assignment
Figure 3 Pin Assignment BTN7930B, BTN7930P and BTN7930S (top view)
3.2 Pin Definitions and Functions
Bold type: pin needs power wiring
Pin Symbol I/O Function
1GND -Ground
2 IN I Input
Defines whether high- or lowside switch is activated
3 INH I Inhibit
When set to low device goes in sleep mode
4,8 OUT O Power output of the bridge
5SR ISlew Rate
The slew rate of the power switches can be adjusted by connecting
a resistor between SR and GND
6 IS O Current Sense and Diagnostics
7 VS - Supply
1235
67
4
8
1235
67
4
8
1235
67
4
8
Data Sheet 6 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
General Product Characteristics
4 General Product Characteristics
4.1 Absolute Maximum Ratings
Absolute Maximum Ratings 1)
Tj = -40 °C to +150 °C; all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
1) Not subject to production test, specified by design
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
Voltages
4.1.1 Supply Voltage VS-0.3 45 V –
4.1.2 Logic Input Voltage VIN
VINH
-0.3 5.3 V –
4.1.3 Voltage at SR Pin VSR -0.3 1.0 V –
4.1.4 Voltage between VS and IS Pin VS -VIS -0.3 45 V –
4.1.5 Voltage at IS Pin VIS -20 45 V –
Currents
4.1.6 HS/LS Continuous Drain Current2)
2) Maximum reachable current may be smaller depending on current limitation level
ID(HS)
ID(LS)
-20 20 A TC < 85°C
switch active
-18 18 A TC < 125°C
switch active
4.1.7 HS/LS Pulsed Drain Current2) ID(HS)
ID(LS)
-50 50 A TC < 85°C
tpulse = 10ms
single pulse
-46 46 A TC < 125°C
tpulse = 10ms
single pulse
4.1.8 HS/LS PWM Current2) ID(HS)
ID(LS)
-26 26 A TC < 85°C
f = 1kHz, DC = 50%
-23 23 A TC < 125°C
f = 1kHz, DC = 50%
-28 28 A TC < 85°C
f = 20kHz, DC = 50%
-25 25 A TC < 125°C
f = 20kHz, DC = 50%
Temperatures
4.1.9 Junction Temperature Tj-40 150 °C–
4.1.10 Storage Temperature Tstg -55 150 °C–
ESD Susceptibility
4.1.11 ESD Susceptibility HBM
IN, INH, SR, IS
OUT, GND, VS
VESD
-2
-4
2
4
kV HBM3)
3) ESD susceptibility, HBM according to EIA/JESD22-A114-B (1.5 kΩ, 100 pF)
Data Sheet 7 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
General Product Characteristics
Note: Stresses above the ones listed here may cause permanent damage to the device. Exposure to absolute
maximum rating conditions for extended periods may affect device reliability.
Note: Integrated protection functions are designed to prevent IC destruction under fault conditions described in the
data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are
not designed for continuous repetitive operation.
Maximum Single Pulse Current
Figure 4 BTN7930 Maximum Single Pulse Current (TC < 85°C)
This diagram shows the maximum single pulse current that can be driven for a given pulse time tpulse. The
maximum reachable current may be smaller depending on the current limitation level. Pulse time may be limited
due to thermal protection of the device.
0
10
20
30
40
50
60
1,0E-03 1,0E-02 1,0E-01 1,0E+00 1,0E+01
t
pulse
[s]
|I
max
| [A]
Data Sheet 8 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
General Product Characteristics
4.2 Functional Range
Note: Within the functional or operating range, the IC operates as described in the circuit description. The electrical
characteristics are specified within the conditions given in the Electrical Characteristics table.
4.3 Thermal Resistance
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Max.
4.2.1 Supply Voltage Range for
Nominal Operation
VS(nom) 818V–
4.2.2 Extended Supply Voltage Range for
Operation
VS(ext) 5.5 28 V Parameter
Deviations possible
4.2.3 Junction Temperature Tj-40 150 °C–
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
4.3.1 Thermal Resistance
Junction-Case, Low Side Switch1)
Rthjc(LS) = ΔTj(LS)/ Pv(LS)
1) Not subject to production test, specified by design
RthJC(LS) – 3.6 4.8 K/W –
4.3.2 Thermal Resistance
Junction-Case, High Side Switch1)
Rthjc(HS) = ΔTj(HS)/ Pv(HS)
RthJC(HS) – 1.1 1.6 K/W –
4.3.3 Thermal Resistance
Junction-Case, both Switches1)
Rthjc = max[ΔTj(HS), ΔTj(LS)] /
(Pv(HS) + Pv(LS))
RthJC – 1.8 2.4 K/W –
4.3.4 Thermal Resistance
Junction-Ambient1)
RthJA –21–K/W
2)
2) Specified RthJA value is according to Jedec JESD51-2,-5,-7 at natural convection on FR4 2s2p board; The Product
(chip+package) was simulated on a 76.2 x 114.3 x 1.5 mm board with 2 inner copper layers (2 x 70 µm Cu, 2 x 35 µm Cu).
Data Sheet 9 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
5 Block Description and Characteristics
5.1 Supply Characteristics
Figure 5 Typical Quiescent Current vs. Junction Temperature
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, IL = 0 A, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
General
5.1.1 Supply Current IVS(on) –23mAVINH = 5 V
VIN = 0V or 5V
RSR = 0 Ω
DC-mode
normal operation
(no fault condition)
5.1.2 Quiescent Current IVS(off) –712µAVINH = 0 V
VIN = 0V or 5V
Tj < 85 °C
––65µA
VINH = 0 V
VIN = 0V or 5V
0
5
10
15
20
25
-40 0 40 80 120 160
T
I
VS(off)
[µA]
[°C]
Data Sheet 10 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
5.2 Power Stages
The power stages of the BTN7930 consist of a p-channel vertical DMOS transistor for the high side switch and a
n-channel vertical DMOS transistor for the low side switch. All protection and diagnostic functions are located in a
separate top chip. Both switches can be operated up to 25 kHz, allowing active freewheeling and thus minimizing
power dissipation in the forward operation of the integrated diodes.
The on state resistance RON is dependent on the supply voltage VS as well as on the junction temperature Tj. The
typical on state resistance characteristics are shown in Figure 6.
Figure 6 Typical ON State Resistance vs. Supply Voltage (BTN7930B)
5
10
15
20
25
30
35
40
4 8 12 16 20 24 28
High Side Switch
T
j
= 150°C
T
j
= 25°C
T
j
= -40°C
V
S
[V]
R
ON(HS)
[mΩ]
10
20
30
40
50
60
70
4 8 12 16 20 24 28
Low Side Switch
T
j
= 150°C
T
j
= 25°C
T
j
= -40°C
R
ON(LS )
[mΩ]
V
S
[V]
Data Sheet 11 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
5.2.1 Power Stages - Static Characteristics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
High Side Switch - Static Characteristics
5.2.1 ON State High Side Resistance1)
1) Specified RON value is related to normal soldering points; RON values is specified for BTN7930B: pin 1,7 to pin 8 (tab,
backside) and for BTN7930P/BTN7930S: pin 1,7 to pin4
RON(HS)
–
–
10
14
–
17
mΩIOUT = 8 A; VS = 13.5 V
BTN7930B
Tj = 25 °C
Tj = 150 °C
–
–
10.8
15.2
–
18.2
BTN7930P
Tj = 25 °C
Tj = 150 °C
–
–
10.1
14.2
–
17.2
BTN7930S
Tj = 25 °C
Tj = 150 °C
5.2.2 Leakage Current High Side IL(LKHS) ––1µAVINH = 0 V; VOUT = 0 V
Tj < 85 °C
–– 50µA
VINH = 0 V; VOUT = 0 V
Tj = 150 °C
5.2.3 Reverse Diode Forward-Voltage
High Side2)
2) Due to active freewheeling, diode is conducting only for a few µs, depending on RSR
VDS(HS)
–
–
–
0.9
0.8
0.6
1.5
1.1
0.8
VIOUT =-8A
Tj = -40 °C
Tj = 25 °C
Tj = 150 °C
Low Side Switch - Static Characteristics
5.2.4 ON State Low Side Resistance1) RON(LS)
–
–
18
28
–
38
mΩIOUT =-8A; VS = 13.5 V
BTN7930B
Tj = 25 °C
Tj = 150 °C
–
–
18.8
29.2
–
39.2
BTN7930P
Tj = 25 °C
Tj = 150 °C
–
–
18.1
28.2
–
38.2
BTN7930S
Tj = 25 °C
Tj = 150 °C
5.2.5 Leakage Current Low Side IL(LKLS) ––1µAVINH = 0 V; VOUT = VS
Tj < 85 °C
–– 10µA
VINH = 0 V; VOUT = VS
Tj = 150 °C
5.2.6 Reverse Diode Forward-Voltage
Low Side2)
VSD(LS)
–
–
–
0.9
0.8
0.7
1.5
1.1
0.9
VIOUT = 8 A
Tj = -40 °C
Tj = 25 °C
Tj = 150 °C
Data Sheet 12 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
5.2.2 Switching Times
Figure 7 Definition of switching times high side (Rload to GND)
Figure 8 Definition of switching times low side (Rload to VS)
Due to the timing differences for the rising and the falling edge there will be a slight difference between the length
of the input pulse and the length of the output pulse. It can be calculated using the following formulas:
•
Δ
tHS = (tdr(HS) + 0.5 tr(HS)) - (tdf(HS) + 0.5 tf(HS))
•
Δ
tLS = (tdf(LS) + 0.5 tf(LS)) - (tdr(LS) + 0.5 tr(LS)).
IN
VOUT
t
t
90%
10%
ΔVOUT
90%
10%
tdr(HS) tr(HS) tdf(HS) tf(HS)
ΔVOUT
IN
V
OUT
t
t
90%
10%
90%
10%
ΔV
OUT
t
df(LS)
t
f(LS)
ΔV
OUT
t
dr(LS)
t
r(LS)
Data Sheet 13 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
5.2.3 Power Stages - Dynamic Characteristics
VS = 13.5 V, Tj = -40 °C to +150 °C, Rload = 4 Ω, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
High Side Switch Dynamic Characteristics
5.2.7 Rise-Time of HS tr(HS)
0.5
–
2
1
2
5
1.6
–
11
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.8 Slew Rate HS on1)
1) Not subject to production test, calculated value; |
Δ
VOUT|/ tr(HS) or |-
Δ
VOUT|/ tf(HS)
Δ
VOUT/
tr( HS) 6.8
–
1
10.8
5.4
2.2
21.6
–
5.4
V/µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.9 Switch on Delay Time HS tdr(HS)
1.5
–
5
3.1
4.4
14
4.5
–
25
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.10 Fall-Time of HS tf(HS)
0.5
–
2
1
2
5
1.6
–
11
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.11 Slew Rate HS off1) -ΔVOUT/
tf(HS) 6.8
–
1
10.8
5.4
2.2
21.6
–
5.4
V/µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.12 Switch off Delay Time HS tdf(HS)
1
–
3
2.4
3.4
10
3
–
17
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
Data Sheet 14 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
VS = 13.5 V, Tj = -40 °C to +150 °C, Rload = 4 Ω, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Low Side Switch Dynamic Characteristics
5.2.13 Rise-Time of LS tr(LS)
0.4
–
2
0.9
2
5
1.4
–
11
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.14 Slew Rate LS switch off1)
1) Not subject to production test, calculated value; |
Δ
VOUT|/ tr(LS) or |-
Δ
VOUT|/ tf(LS)
Δ
VOUT/
tr(LS) 7.7
–
1
12
5.4
2.2
27
–
5.4
V/µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.15 Switch off Delay Time LS tdr(LS)
0.6
–
2
1.3
2.2
5
2
–
11
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.16 Fall-Time of LS tf(LS)
0.5
–
2
1
2
5
1.5
–
11
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.17 Slew Rate LS switch on1) -ΔVOUT/
tf(LS) 7.2
–
1
10.8
5.4
2.2
21.6
–
5.4
V/µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
5.2.18 Switch on Delay Time LS tdf(LS)
2
–
5
4
5.6
15
5
–
25
µs
RSR = 0 Ω
RSR = 5.1 kΩ
RSR = 51 kΩ
Data Sheet 15 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
5.3 Protection Functions
The device provides integrated protection functions. These are designed to prevent IC destruction under fault
conditions described in the data sheet. Fault conditions are considered as “outside” normal operating range.
Protection functions are not to be used for continuous or repetitive operation, with the exception of the current
limitation (Chapter 5.3.4). In a fault condition the BTN7930 will apply the highest slew rate possible independent
of the connected slew rate resistor. Overvoltage, overtemperature and overcurrent are indicated by a fault current
IIS(LIM) at the IS pin as described in the paragraph “Status Flag Diagnosis With Current Sense Capability” on
Page 19 and Figure 12.
In the following the protection functions are listed in order of their priority. Overvoltage lock out overrides all other
error modes.
5.3.1 Overvoltage Lock Out
To assure a high immunity against overvoltages (e.g. load dump conditions) the device shuts the lowside MOSFET
off and turns the highside MOSFET on, if the supply voltage is exceeding the over voltage protection level VOV(OFF).
The IC operates in normal mode again with a hysteresis VOV(HY) if the supply voltage decreases below the switch-
on voltage VOV(ON). In H-bridge configuration, this behavior of the BTN7930 will lead to freewheeling in highside
during over voltage.
5.3.2 Undervoltage Shut Down
To avoid uncontrolled motion of the driven motor at low voltages the device shuts off (output is tri-state), if the
supply voltage drops below the switch-off voltage VUV(OFF). The IC becomes active again with a hysteresis VUV(HY)
if the supply voltage rises above the switch-on voltage VUV(ON).
5.3.3 Overtemperature Protection
The BTN7930 is protected against overtemperature by an integrated temperature sensor. Overtemperature leads
to a shut down of both output stages. This state is latched until the device is reset by a low signal with a minimum
length of treset at the INH pin, provided that its temperature has decreased at least the thermal hysteresis ΔT in the
meantime.
Repetitive use of the overtemperature protection impacts lifetime.
5.3.4 Current Limitation
The current in the bridge is measured in both switches. As soon as the current in forward direction in one switch
(high side or low side) is reaching the limit ICLx, this switch is deactivated and the other switch is activated for tCLS.
During that time all changes at the IN pin are ignored. However, the INH pin can still be used to switch both
MOSFETs off. After tCLS the switches return to their initial setting. The error signal at the IS pin is reset after 2 * tCLS.
Unintentional triggering of the current limitation by short current spikes (e.g. inflicted by EMI coming from the
motor) is suppressed by internal filter circuitry. Due to thresholds and reaction delay times of the filter circuitry the
effective current limitation level ICLx depends on the slew rate of the load current dI/dt as shown in Figure 10.
Data Sheet 16 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
Figure 9 Timing Diagram Current Limitation (Inductive Load)
Figure 10 Typical Current Limitation Level vs. Current Slew Rate dI/dt
I
L
t
I
CLx
t
CLS
I
CLx0
dI
L
/dt
I
CLH
[A]
[A/ms]
20
25
30
35
40
45
50
55
0 500 1000 1500 2000
I
CLH0
T
j
= 25°C
T
j
= 150°C
T
j
= -40°C
High Side Switch
dI
L
/dt
I
CLL
[A]
[A/ms]
20
25
30
35
40
45
50
55
0 500 1000 1500 2000
I
CLL0
T
j
= 25°C T
j
= -40°C
T
j
= 150°C
Low Side Switch
Data Sheet 17 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
Figure 11 Typical Current Limitation Detection Levels vs. Supply Voltage
In combination with a typical inductive load, such as a motor, this results in a switched mode current limitation.
This method of limiting the current has the advantage of greatly reduced power dissipation in the BTN7930
compared to driving the MOSFET in linear mode. Therefore it is possible to use the current limitation for a short
time without exceeding the maximum allowed junction temperature (e.g. for limiting the inrush current during motor
start up). However, the regular use of the current limitation is allowed as long as the specified maximum junction
temperature is not exceeded. Exceeding this temperature can reduce the lifetime of the device.
5.3.5 Short Circuit Protection
The device is short circuit protected against
• output short circuit to ground
• output short circuit to supply voltage
• short circuit of load
The short circuit protection is realized by the previously described current limitation in combination with the over-
temperature shut down of the device.
20
25
30
35
40
45
50
4 6 8 10 12 14 16 18 20
T
j
= 25°C
High Side Switch
T
j
= -40°C
T
j
= 150°C
V
S
[V]
I
CL H
[A]
Low Side Switch
V
S
[V]
20
25
30
35
40
45
50
4 6 8 10 12 14 16 18 20
I
CL L
[A]
Tj = 150°C
Tj = 25°C
Tj = -40°C
Data Sheet 18 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
5.3.6 Electrical Characteristics - Protection Functions
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Under Voltage Shut Down
5.3.1 Switch-ON Voltage VUV(ON) ––5.5V VS increasing
5.3.2 Switch-OFF Voltage VUV(OFF) 4.0 – 5.4 V VS decreasing
5.3.3 ON/OFF hysteresis VUV(HY) –0.2–V –
Over Voltage Lock Out
5.3.4 Switch-ON Voltage VOV(ON) 27.8 – – V VS decreasing
5.3.5 Switch-OFF Voltage VOV(OFF) 28 – 30 V VS increasing
5.3.6 ON/OFF hysteresis VOV(HY) –0.2–V –
Current Limitation
5.3.7 Current Limitation Detection level
High Side
ICLH0 30 42 54 A VS = 13.5 V
5.3.8 Current Limitation Detection level
Low Side
ICLL0 20 32 44 A VS = 13.5 V
Current Limitation Timing
5.3.9 Shut OFF Time for HS and LS tCLS 70 115 210 µs VS = 13.5 V
Thermal Shut Down
5.3.10 Thermal Shut Down Junction
Temperature
TjSD 155 175 200 °C–
5.3.11 Thermal Switch ON Junction
Temperature
TjSO 150 – 190 °C–
5.3.12 Thermal Hysteresis ΔT–7–K –
5.3.13 Reset Pulse at INH Pin (INH low) treset 4––µs–
Data Sheet 19 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
5.4 Control and Diagnostics
5.4.1 Input Circuit
The control inputs IN and INH consist of TTL/CMOS compatible schmitt triggers with hysteresis which control the
integrated gate drivers for the MOSFETs. Setting the INH pin to high enables the device. In this condition one of
the two power switches is switched on depending on the status of the IN pin. To deactivate both switches, the INH
pin has to be set to low. No external driver is needed. The BTN7930 can be interfaced directly to a microcontroller,
as long as the maximum ratings in Chapter 4.1 are not exceeded.
5.4.2 Dead Time Generation
In bridge applications it has to be assured that the highside and lowside MOSFET are not conducting at the same
time, connecting directly the battery voltage to GND. This is assured by a circuit in the driver IC, generating a so
called dead time between switching off one MOSFET and switching on the other. The dead time generated in the
driver IC is automatically adjusted to the selected slew rate.
5.4.3 Adjustable Slew Rate
In order to optimize electromagnetic emission, the switching speed of the MOSFETs is adjustable by an external
resistor. The slew rate pin SR allows the user to optimize the balance between emission and power dissipation
within his own application by connecting an external resistor RSR to GND.
5.4.4 Status Flag Diagnosis With Current Sense Capability
The status pin IS is used as a combined current sense and error flag output. In normal operation (current sense
mode), a current source is connected to the status pin, which delivers a current proportional to the forward load
current flowing through the active high side switch. If the high side switch is inactive or the current is flowing in the
reverse direction no current will be driven except for a marginal leakage current IIS(LK). The external resistor RIS
determines the voltage per output current. E.g. with the nominal value of 6k for the current sense ratio
kILIS =IL/IIS, a resistor value of RIS = 1 kΩ leads to VIS = (IL / 6 A)V. In case of a fault condition the status output
is connected to a current source which is independent of the load current and provides IIS(lim). The maximum
voltage at the IS pin is determined by the choice of the external resistor and the supply voltage. In case of current
limitation the IIS(lim) is activated for 2 * tCLS.
Figure 12 Sense Current and Fault Current
Normal operation:
current sense mode
Fault condition:
error flag mode
VS
R
IS
I
IS
~ I
Load
ESD-ZD
V
IS
Sense
output
logic
IS
R
IS
IS
V
IS
I
IS(lim)
I
IS(lim)
VS
ESD-ZD
Sense
output
logic
I
IS
~ I
Load
Data Sheet 20 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
Figure 13 Sense Current vs. Load Current
5.4.5 Truth Table
Device State Inputs Outputs Mode
INH IN HSS LSS IS
Normal Operation 0 X OFF OFF 0 Stand-by mode
1 0 OFF ON 0 LSS active
1 1 ON OFF CS HSS active
Over-Voltage (OV) X X ON OFF 1 Shut-down of LSS,
HSS activated,
error detected
Under-Voltage (UV) X X OFF OFF 0 UV lockout
Overtemperature or Short
Circuit of HSS or LSS
0 X OFF OFF 0 Stand-by mode, reset of latch
1 X OFF OFF 1 Shut-down with latch, error detected
Current Limitation Mode 1 1 OFF ON 1 Switched mode, error detected1)
1) Will return to normal operation after tCLS; Error signal is reset after 2*tCLS (see Chapter 5.3.4)
1 0 ON OFF 1 Switched mode, error detected1)
Inputs Switches Status Flag IS
0 = Logic LOW OFF = switched off CS = Current sense mode
1 = Logic HIGH ON = switched on 1 = Logic HIGH (error)
X = 0 or 1
IL[A]
IIS(lim)
IIS [mA]
ICLx
Error Flag Mode
lower kilis value
higher kilis value
Current Sense Mode
(High Side)
Data Sheet 21 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Block Description and Characteristics
5.4.6 Electrical Characteristics - Control and Diagnostics
VS = 8 V to 18 V, Tj = -40 °C to +150 °C, all voltages with respect to ground, positive current flowing into pin
(unless otherwise specified)
Pos. Parameter Symbol Limit Values Unit Conditions
Min. Typ. Max.
Control Inputs (IN and INH)
5.4.1 High level Voltage
INH, IN
VINH(H)
VIN(H)
–
–
1.75
1.6
2.15
2
V–
5.4.2 Low level Voltage
INH, IN
VINH(L)
VIN(L)
1.1 1.4 – V –
5.4.3 Input Voltage hysteresis VINHHY
VINHY
–
–
350
200
–
–
mV –
5.4.4 Input Current high level IINH(H)
IIN(H)
–30150µAVIN = VINH = 5.3 V
5.4.5 Input Current low level IINH(L)
IIN(L)
–25125µAVIN = VINH = 0.4 V
Current Sense
5.4.6 Current Sense ratio in static on-
condition
kILIS = IL / IIS
kILIS
4.7
4.1
3.5
6
6
6
8
8.5
9.5
103RIS = 1 kΩ
IL = 15 A
IL = 8 A
IL = 3 A
5.4.7 Maximum analog Sense Current,
Sense Current in fault Condition
IIS(lim) 456.5mAVS = 13.5 V
RIS = 1kΩ
5.4.8 Isense Leakage current IISL ––1µAVIN = 0 V or
VINH = 0 V
5.4.9 Isense Leakage current,
active high side switch
IISH –180µAVIN = VINH = 5 V
IL = 0 A
Data Sheet 22 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Application Information
6 Application Information
Note: The following information is given as a hint for the implementation of the device only and shall not be
regarded as a description or warranty of a certain functionality, condition or quality of the device.
6.1 Application Example
Figure 14 Application Example: H-Bridge with two BTN7930
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
6.2 Layout Considerations
Due to the fast switching times for high currents, special care has to be taken to the PCB layout. Stray inductances
have to be minimized in the power bridge design as it is necessary in all switched high power bridges. The
BTN7930 has no separate pin for power ground and logic ground. Therefore it is recommended to assure that the
offset between the ground connection of the slew rate resistor, the current sense resistor and ground pin of the
device (GND / pin 1) is minimized. If the BTN7930 is used in a H-bridge or B6 bridge design, the voltage offset
between the GND pins of the different devices should be small as well.
A ceramic capacitor from VS to GND close to each device is recommended to provide current for the switching
phase via a low inductance path and therefore reducing noise and ground bounce. A reasonable value for this
capacitor would be about 470 nF.
The digital inputs need to be protected from excess currents (e.g. caused by induced voltage spikes) by series
resistors in the range of 10 kΩ.
VS
OUT
INH
IN
IS
SR
GND
BTN7930
VS
OUT
INH
IN
IS
SR
GND
BTN7930
M
XC866 TLE
4278G
V
S
I/O
Reset
Vdd
Vss
WO
RO
Q
DGND
I
IPB
100P03P3L
-04
Microcontroller Reverse Polarity
Protection
Voltage Regulator
High Current H-Bridge
I/O I/O I/O I/O
C
Sc1
470nF
C
D
47nF
C
Q
22µF
C
S
470µF R
1
1kΩ
D
Z1
10V
C
Sc2
470nF
R
IN1
10kΩ
R
IN2
10kΩ
R
INH2
10kΩ
R
INH1
10kΩ
R
SR1
0..51kΩ
R
IS12
470Ω
R
SR2
0..51kΩ
Data Sheet 23 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Application Information
6.3 Half-bridge Configuration Considerations
Please note that, if the BTN7930 is used in a half-bridge configuration with the load connected between OUT and
GND and the supply voltage is exceeding the Overvoltage Switch-OFF level VOV(OFF), the implemented
“Overvoltage Lock Out” feature leads to automatically turning on the high side switch, while turning off the low
side switch, and therefore connecting the load to VS; independently of the current IN- and INH-pin signals (see
also “Truth Table” on Page 20). This will lead to current flowing through the load, if not otherwise configured.
It shall be insured that the power dissipated in the NovalithIC™ does not exceed the maximum ratings. For further
explanations see the application note “BTN79x0 Over Voltage (OV) Operation”.
Figure 15 Application Example: Half-Bridge with a BTN7930 (Load to GND)
Note: This is a simplified example of an application circuit. The function must be verified in the real application.
M
TLE
4278G
V
S
I/O
Reset
Vdd
Vss
WO
RO
Q
DGND
I
IPB
100P03P3L-
04
Microcontroller Reverse Polarity
Protection
Voltage Regulator
High Current Half-Bridge
I/O I/O I/O
VS
OUT
INH
IN
IS
SR
GND
BTN7930
CS
470µF R1
1kΩ
DZ1
10V
C
Sc
470nF
RIN
10kΩ
RINH
10kΩ
RSR
0..51kΩ
R
IS
1kΩ
CQ
22µF CD
47nF
XC866
Data Sheet 24 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Package Outlines
7 Package Outlines
7.1 PG-TO263-7-1
Figure 16 PG-TO263-7-1 (Plastic Green Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
A
BA0.25 M
0.1
Typical
±0.2
10
8.5 1)
7.55
1)
(15)
±0.2
9.25
±0.3
1
0...0.15
7 x 0.6 ±0.1
±0.1
GPT09114
1.27
4.4
B
0.5
±0.1
±0.3
2.7
4.7
±0.5
0.05
1)
0.1
Metal surface min. X = 7.25, Y = 6.9
2.4
1.27
All metal surfaces tin plated, except area of cut.
0...0.3
B
6 x
8˚ MAX.
8.42
10.8
9.4
16.15
4.6
0.47
0.8
Footprint
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.Dimensions in mm
Data Sheet 25 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Package Outlines
7.2 PG-TO220-7-11
Figure 17 PG-TO220-7-11 (Plastic Green Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
±0.1
1.27
4.4
9.25
±0.2
0.05
2.4
0.5
±0.1
±0.3
8.6
10.2
±0.3
±0.4
3.9
±0.4
8.4
3.7
±0.3
A
A0.25
M
2.8
1)
15.65
±0.3
12.95
0...0.15
1.27
0.6
±0.1
C
±0.2
17
±0.3
8.5
1)
9.9
±0.2
7 x
-0.15
3.7
10
±0.2
6 x
C
1.6
±0.3
All metal surfaces tin plated, except area of cut.
Metal surface min. X = 7.25, Y = 12.3
Typical
1)
0...0.3
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.Dimensions in mm
Data Sheet 26 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Package Outlines
7.3 PG-TO220-7-12
Figure 18 PG-TO220-7-12 (Plastic Transistor Single Outline Package)
Green Product (RoHS compliant)
To meet the world-wide customer requirements for environmentally friendly products and to be compliant with
government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e
Pb-free finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).
A
BA0.25 M
9.9±0.2
1)
15.65
±0.3
12.95
0...0.15
1.27
0.6 ±0.1
±0.1
1.27
4.4
B
9.25
±0.2
0.05
C
17
±0.3
8.51)
10±0.2
C
2.4
0.5±0.1
13
±0.5
±0.5
11
7 x
0...0.3
6 x
All metal surfaces tin plated, except area of cut.
Metal surface min. X = 7.25, Y = 12.3
1) Typical
2.4
3.7
-0.15
±0.2
2.8
For further information on alternative packages, please visit our website:
http://www.infineon.com/packages.Dimensions in mm
Data Sheet 27 Rev. 1.1, 2007-11-21
High Current PN Half Bridge
BTN7930
Revision History
8 Revision History
Revision Date Changes
1.1 2007-11-21 New packages added;
1.0 2007-11-06 Initial version Data Sheet
Edition 2007-11-21
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of conditions or
characteristics. With respect to any examples or hints given herein, any typical values stated herein and/or any
information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties
and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please contact the nearest
Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information on the types in
question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with the express written
approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure
of that life-support device or system or to affect the safety or effectiveness of that device or system. Life support
devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may
be endangered.