1. Product profile
1.1 General description
160 W LDMOS power transistor with improved video bandwidth for base station
applications at frequencies from 2000 MHz to 2200 MHz.
[1] Test signal: 3GPP test model 1; 64 DPCH; PAR = 8.4 dB at 0.01 % probability on CCDF;
carrier spacing 5 MHz.
1.2 Features and benefits
Excellent ruggedness
High efficiency
Low Rth providing excellent thermal stability
Decoupling leads to enable improved video bandwidth (100 MHz typical)
Lower output capacitance for improved performance in Doherty applications
Designed for low memory effects providing excellent pre-distortability
Internally matched for ease of use
Integrated ESD protection
Integrated current sense
Compliant to Directive 2002/95/EC, rega rd in g Re stri ctio n of Hazard ou s Sub stances
(RoHS)
1.3 Applications
RF power amplifier for W-CDMA base stations and multi carrier applications in the
2000 MHz to 2200 MHz frequency range
BLF8G22LS-160BV
Power LDMOS transistor
Rev. 1 — 25 June 2012 Product data sheet
Table 1. Typical performance
Ty pical RF performance at Tcase = 25
C in a common source class-AB production test circuit.
Test signal f IDq VDS PL(AV) GpDACPR
(MHz) (mA) (V) (W) (dB) (%) (dBc)
2-carrier W-CDMA 2110 to 2170 1300 32 55 18.0 32 31[1]
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Product data sheet Rev. 1 — 25 June 2012 2 of 13
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
[1] Continuous use at maximum temperature will affect MTTF.
5. Recommended operating conditions
6. Thermal characteristics
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
1drain
2gate
3source [1]
4,5 video decoupling
6 sense gate
7 sense drain
154
27
6
3
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Table 3. Orde ring information
Type number Package
Name Description Version
BLF8G22LS-160BV - earless flanged LDMOST ceramic package; 6 leads SOT1120B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage 0.5 +13 V
VGS(sense) sense gate-source voltage 0.5 +9 V
Tstg storage temperature 65 +150 C
Tjjunction temperature - 200 C
Tcase case temperature [1] - 150 C
Table 5. Operating conditions
Symbol Parameter Conditions Min Typ Max Unit
Tcase case temperature 40 - +125 C
Table 6. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =80C; PL= 55 W 0.27 K/W
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Product data sheet Rev. 1 — 25 June 2012 3 of 13
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
7. Characteristics
8. Test information
8.1 Ruggedness in class-AB operation
The BLF8G22LS-160BV is capable to withstand a load mismatch corresponding to
VSWR = 10 : 1 through all phases under the following conditions: VDS =32V;
IDq = 1300 mA; PL= 160 W; f = 2110 MHz.
Table 7. Characteristics
Tj = 25
C; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D=2.16mA 65 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 216 mA 1.5 1.9 2.3 V
IDSS drain leakage current VGS =0V; V
DS =28V - - 4.5 A
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V -40-A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 450 nA
gfs forward transcondu ctance VDS =10V; I
D= 10.8 A - 16 - S
RDS(on) drain-source on-state resistance VGS =V
GS(th) + 3.75 V;
ID=7.56A -0.06-
IDq quiescent drain current main transitor:
VDS =32 V
sense transitor:
IDS = 23.4 m A;
VDS =30.4V
1175 1300 1425 mA
Table 8. Application information
Test signal: 2-carrier W-CDMA; PAR 8.4 dB at 0.01 % proba bility on CCDF; 3GPP test model 1; 64
DPCH; f1 = 2112.5 MHz; f2 = 2117.5 MHz; f3 = 2162.5 MHz; f4 = 2167.5 MHz; RF performance at
VDS = 32 V; IDq = 1300 mA; Tcase = 25
C; unless otherwise specified; in a class-AB production test
circuit.
Symbol Parameter Conditions Min Typ Max Unit
Gppower gain PL(AV) = 55 W 16.8 18.0 19.7 dB
RLin input return loss PL(AV) = 55 W - 13 7dB
Ddrain efficiency PL(AV) = 55 W 29 32 - %
ACPR5M adjacent channel power ratio (5 MHz) PL(AV) = 55 W - 31 28 dBc
Table 9. Application information
Mode of operation: 1-carrier W-CDMA; PAR 7.2 dB at 0.01 % probability on CCDF; 3GPP test
model 1; 64 DPCH; f = 2167.5 MHz; RF performance at VDS = 32 V; IDq =1300mA; T
case = 25
C;
unless otherwise specified; in a class-AB production test circuit.
Symbol Parameter Conditions Min Typ Max Unit
PAROoutput peak-to-average ratio PL(AV) =115W;
at 0.01 % probability on CCDF 3.9 4.3 - dB
PL(M) peak output power 290 310 - W
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Product data sheet Rev. 1 — 25 June 2012 4 of 13
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
8.2 Impedance information
[1] ZS and ZL defined in Figure 1.
8.3 VBW in class-AB operation
The BLF8G22LS-160BV shows 100 MHz (typical) video bandwid th in class-AB test circuit
in 2.1 GHz band at 32 V and 1.3 A.
Table 10. Typical impedance
IDq = 1300 mA; main transistor VDS = 32 V.
f ZS[1] ZL[1]
(MHz) () ()
2110 2.2 j4.6 1.4 j2.8
2140 2.1 j4.5 1.4 j2.6
2170 2.1 j4.3 1.3 j2.4
Fig 1. Definition of transis tor imp e danc e
001aaf059
drain
Z
L
Z
S
gate
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Product data sheet Rev. 1 — 25 June 2012 5 of 13
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
8.4 CW pulse
VDS =32V; I
Dq = 1300 mA.
(1) Gp at f = 2110 MHz
(2) Gp at f = 2140 MHz
(3) Gp at f = 2170 MHz
(4) D at f = 2110 MHz
(5) D at f = 2140 MHz
(6) D at f = 2170 MHz
VDS =32V; I
Dq = 1300 mA.
(1) f = 2110 MHz
(2) f = 2140 MHz
(3) f = 2170 MHz
Fig 2. Power gain and drain efficiency as function of
load power; typical values Fig 3. Input return loss as a function of load power;
typical values
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BLF8G22LS-160BV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 25 June 2012 6 of 13
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
8.5 2-carrier W-CDMA
VDS =32V; I
Dq = 1300 mA.
(1) Gp at f = 2115 MHz
(2) Gp at f = 2140 MHz
(3) Gp at f = 2165 MHz
(4) D at f = 2115 MHz
(5) D at f = 2140 MHz
(6) D at f = 2165 MHz
VDS =32V; V
GS =32V; f=5MHz; =46%.
(1) ACPR5M at f = 2115 MHz
(2) ACPR5M at f = 2140 MHz
(3) ACPR5M at f = 2165 MHz
(4) ACPR10M at f = 2115 MHz
(5) ACPR10M at f = 2140 MHz
(6) ACPR10M at f = 2165 MHz
Fig 4. Power gain and drain efficiency as function of
load power; typical values Fig 5. Adjacent channel power ratio (5MHz) and
adjacent channel power ratio (10MHz) as
function of load power; typical values
VDS =32V; I
Dq = 1300 mA.
(1) f = 2115 MHz
(2) f = 2140 MHz
(3) f = 2165 MHz
Fig 6. Peak to aver age power ratio as a function of load power; typical values
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BLF8G22LS-160BV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 25 June 2012 7 of 13
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
8.6 2-tone VBW
VDS =32V; I
Dq = 1300 mA; fc= 2140 MHz.
(1) IMD3 low
(2) IMD3 high
(3) IMD5 low
(4) IMD5 high
(5) IMD7 low
(6) IMD7 high
Fig 7. VBW capability in class-AB test circuit
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BLF8G22LS-160BV All information provided in this document is subject to legal disclaimers. © NXP B.V. 2012. All rights reserved.
Product data sheet Rev. 1 — 25 June 2012 8 of 13
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
8.7 Test circuit
[1] American Technical Ceramics type 100B or capacitor of same quality.
[2] Murata or capacitor of same quality.
[3] TDK or capacitor of same quality.
Printed-Circuit Board (PCB): Taconic RF35; r = 3.5; thickness = 0.765 mm;
thickness copper plating = 35 m.
See Table 11 for a list of components.
Fig 8. Component layout for class-AB prod uc tio n test circuit
Table 11. List of components
For test circuit see [8].
Component Description Value Remarks
C1, C2, C10, C1 1, C13,
C15 multilayer ceramic chip capacitor 12 pF [1] ATC100B
C5, C6 multilayer ceramic chip capacitor 120 pF [1] ATC100B
C3, C4, C12, C16,
C18, C19 multilayer ceramic chip capacitor 4.7 F, 50 V [2] Murata
C14 multilayer ceramic chip capacitor 4.7 F, 100 V [3] TDK
C15 electrolytic capacitor 470 F, 63 V
R1 SMD resistor 4.7 Philips 1206
R2 SMD resistor 470 Philips 1206
R3 SMD resistor 820 Philips 1206
R4 SMD resistor 12 Philips 1206
R5 SMD resistor 2200 Philips 1206
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Product data sheet Rev. 1 — 25 June 2012 9 of 13
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
9. Package outline
Fig 9. Package outline SOT1120B
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT1120B
sot1120b_po
12-04-11
12-06-14
Unit(1)
mm
max
nom
min
4.75
3.45
1.83
1.57
0.18
0.10
20.02
19.61
19.96
19.66
9.53
9.27
1.14
0.89
19.94
18.92
9.91
9.65
A
Dimensions
Earless flanged LDMOST ceramic package; 6 leads SOT1120B
bb
1
12.83
12.57
cDD
1EE
1
9.53
9.25
FHL
3.56
3.30
Q(2)
1.70
1.45
U1
20.70
20.45
U2
0.51
inches
max
nom
min
0.187
0.136
0.072
0.062
0.007
0.004
0.788
0.772
0.786
0.774
0.375
0.365
0.045
0.035
0.785
0.745
0.39
0.38
0.505
0.495
0.375
0.364
0.140
0.130
0.067
0.057
0.815
0.805
9.53
8.71
0.375
0.343
4.60
4.32
0.181
0.170
0.02
0.15
0.0059
w2ZyZ
1
15.52
14.50
0.611
0.571
Z2
64°
60°
64°
60°
α
α
0 5 10 mm
scale
67
2
45
1
D
U1
A
F
LD1D
E1
U2
HZ
Z2
Dw2
b1Q
b
Z1E
c
3
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. dimension is measured 0.030 inch (0.76 mm) from the body.
y
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Product data sheet Rev. 1 — 25 June 2012 10 of 13
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Power LDMOS transistor
10. Abbreviations
11. Revision history
Table 12. Ab breviations
Acronym Description
3GPP Third Generation Partnership Project
CCDF Complementary Cumulative Distribution Function
DPCH Dedicated Physical CHannel
ESD ElectroStatic Discharge
LDMOS Laterally Diffused Metal Oxide Semiconductor
LDMOST Laterally Diffused Metal Oxide Semiconductor Transistor
MTTF Mean T ime To Failure
PAR Peak-to-Average Ratio
SMD Surface Mounted Device
VBW Video BandWid th
VSWR Voltage Standing Wave Ratio
W-CDMA Wideband Code Division Multiple Acce ss
Table 13. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF8G22LS-160BV v.1 20120625 Product data sheet - -
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Power LDMOS transistor
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Document status[1][2] Product status[3] Definition
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Product data sheet Rev. 1 — 25 June 2012 12 of 13
NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
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NXP Semiconductors BLF8G22LS-160BV
Power LDMOS transistor
© NXP B.V. 2012. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 25 June 2012
Document identifier: BLF8G22LS-160BV
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values . . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Recommended operating conditions. . . . . . . . 2
6 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
7 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 3
8.1 Ruggedness in class-AB operation . . . . . . . . . 4
8.2 Impedance information. . . . . . . . . . . . . . . . . . . 4
8.3 VBW in class-AB operation . . . . . . . . . . . . . . . 4
8.4 CW pulse . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8.5 2-carrier W-CDMA . . . . . . . . . . . . . . . . . . . . . . 6
8.6 2-tone VBW . . . . . . . . . . . . . . . . . . . . . . . . . . . 7
8.7 Test circuit. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 10
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 11
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 11
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 11
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 12
13 Contact information. . . . . . . . . . . . . . . . . . . . . 12
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13