II. Manufacturing Information
A. Description/Function: High-Performance, Dual-Output, Network Clock Synthesizer
B. Process:
C. Number of Device Transistors:
D. Fabri cation Location: Taiwan
E. Assembly Location: Carsem
F. Date of Initial Production: December 7, 2007
III. Packaging Information
A. Package Type: 48-pin LQFP
B. Lead Frame: Copper
C. Lead Finish: 100% matte Tin
D. Die Attach: Conductive Epoxy
E. Bondwire: Gold (1 mil dia.)
F. Mold Material: Epoxy with silica filler
G. Assembly Diagra m: #05-900 0-2681
H. Flammability Rating: Class UL94-V0
MAX3674ECM+
I. Classification of Moisture Sensitivity per
JEDEC standard J-STD-020-C
Level 1
J. Multi Layer Theta Ja: 46°C/W
K. Multi Layer Theta Jc: 10°C/W
IV. Die Information
A. Dimensions: 110 X 108 mils
B. Passivation: Laser/TEOS Ox - Pass/Nit -PreLP+GenLP
C. Interconnect: Al/Cu 0.5%
D. Backside Metallization: None
E. Minimum Metal Width: 0.18um
F. Minimum Metal Spacing: 0.18um
G. Bondpad Dimensions: 5 mil. Sq.
H. Isol ation Dielectric: SiO2
I. Die Separation Method: Wafer Saw
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