Pe Discrete POWER & Signal FAIRCFHIILD Technologies SEMICONDUCTOR m MPS3703 PNP General Purpose Amplifier This device is designed for use as general purpose amplifiers and switches requiring collector currents to 500 mA. Sourced from Process 63. See PN2907A for characteristics. Absol ute Maxi mum Rati ngs* TA = 25C unless otherwise noted Symbol Parameter Value Units Voeo Collector-Emitter Voltage 30 Vv Vcso Collector- Base Voltage 50 Vv VeBo Emitter-Base Voltage 5.0 Vv Io Collector Current - Continuous 800 mA Ty, Tstg Operating and Storage Junction Temperature Range -55 to +150 C *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. NOTES: 1) These ratings are based on a maximum junction temperature of 150 degrees C. 2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations. Thermal Characteristics TA = 25C unless otherwise noted Symbol Characteristic Max Units MPS3703 Pp Total Device Dissipation 625 mW Derate above 25C 5.0 mw/C Rac Thermal Resistance, Junction to Case 83.3 C/W Roa Thermal Resistance, Junction to Ambient 200 C/W cOZESdWN 1997 Fairchild Semiconductor CorporationElectrical Characteristics PNP General Purpose Amplifier TA = 25C unless otherwise noted (continued) Symbol Parameter Test Conditions Min Max | Units OFF CHARACTERISTICS Vipr)ceo Collector-Emitter Breakdown Voltage | Ic = 10 mA, lp =0 30 Vv Visryco Collector-Base Breakdown Voltage Io = 100 pA, IE=0 50 Vv Visr)eB0 Emitter-Base Breakdown Voltage le = 100 pA, Ip = 0 5.0 Vv lepo Collector Cutoff Current Vop=20V,1-=0 100 nA lesbo Emitter Cutoff Current Vep = 3.0 V, Ip =0 100 nA ON CHARACTERISTICS* Hee DC Current Gain Voce = 5.0 V, lp = 50 mA 30 150 VeEsaty Collector-Emitter Saturation Voltage lc = 50 mA, Ip = 5.0 MA 0.25 Vv VBE(on) Base-Emitter On Voltage lo = 50 MA, Vce= 5.0 V 0.6 1.0 Vv SMALL SIGNAL CHARACTERISTICS Cob Output Capacitance Vos = 10 V, f=1.0 MHz 12 pF fr Current Gain - Bandwidth Product lo = 50 mA, Vce = 5.0 V, 100 MHz f = 20 MHz *Pulse Test: Pulse Width < 3001s, Duty Cycles 2.0% cOZESdWN