1N5624/4 - VISHAY - Pdf.Support

1N5624, 1N5625, 1N5626, 1N5627

www.vishay.com Vishay Semiconductors

Rev. 1.6, 05-Sep-13 1Document Number: 86063

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Standard Avalanche Sinterglass Diode

MECHANICAL DATA

Case: SOD-64

Terminals: plated axial leads, solderable per

MIL-STD-750, method 2026

Polarity: color band denotes cathode end

Mounting position: any

Weight: approx. 858 mg

FEATURES

• Glass passivated junction

• Hermetically sealed package

• Controlled avalanche characteristics

• Low reverse current

• High surge current loading

• Material categorization:

For definitions of compliance please see

www.vishay.com/doc?99912

APPLICATIONS

• Rectification diode, general purpose

949588

ORDERING INFORMATION (Example)

DEVICE NAME ORDERING CODE TAPED UNITS MINIMUM ORDER QUANTITY

1N5627 1N5627-TR 2500 per 10" tape and reel 12 500

1N5627 1N5627-TAP 2500 per ammopack 12 500

PARTS TABLE

PART TYPE DIFFERENTIATION PACKAGE

1N5624 VR = 200 V; IF(AV) = 3 A SOD-64

1N5625 VR = 400 V; IF(AV) = 3 A SOD-64

1N5626 VR = 600 V; IF(AV) = 3 A SOD-64

1N5627 VR = 800 V; IF(AV) = 3 A SOD-64

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT

Reverse voltage = repetitive peak reverse

voltage See electrical characteristics

1N5624 VR = VRRM 200 V

1N5625 VR = VRRM 400 V

1N5626 VR = VRRM 600 V

1N5627 VR = VRRM 800 V

Peak forward surge current tp = 10 ms, half sinewave IFSM 100 A

Repetitive peak forward current IFRM 18 A

Average forward current IF(AV) 3A

Pulse avalanche peak power tp = 20 μs, half sine wave,

Tj = 175 °C PR1000 W

Pulse energy in avalanche mode, non repetitive

(inductive load switch off) I(BR)R = 1 A, Tj = 175 °C ER20 mJ

i2*t-rating i2*t 40 A2*s

Junction and storage temperature range Tj = Tstg - 55 to + 175 °C

MAXIMUM THERMAL RESISTANCE (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT

Junction ambient l = 10 mm, TL = constant RthJA 25 K/W

On PC board with spacing 25 mm RthJA 70 K/W

1N5624, 1N5625, 1N5626, 1N5627

www.vishay.com Vishay Semiconductors

Rev. 1.6, 05-Sep-13 2Document Number: 86063

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

TYPICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

Fig. 1 - Max. Thermal Resistance vs. Lead Length

Fig. 2 - Forward Current vs. Forward Voltage

Fig. 3 - Max. Average Forward Current vs. Ambient Temperature

Fig. 4 - Reverse Current vs. Junction Temperature

ELECTRICAL CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)

PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT

Forward voltage IF = 3 A VF--1V

Reverse current VR = VRRM IR-0.11μA

VR = VRRM, Tj = 100 °C IR- 5 10 μA

Breakdown voltage IR = 100 μA, tp/T = 0.01,

tp = 0.3 ms V(BR) - - 1600 V

Diode capacitance VR = 4 V, f = 1 MHz CD-4060pF

Reverse recovery time IF = 0.5 A, IR = 1 A, iR = 0.25 A trr -3.55μs

IF = 1 A, dI/dt = 5 A/μs, VR = 50 V trr -4.57.5μs

Reverse recovery charge IF = 1 A, dI/dt = 5 A/μs Qrr -812μC

0 5 10 15 25

RthJA - Therm. Resist.

Junction/Ambient (K/W)

I - Lead Length (mm)

94 9563

TL = constant

I – Forward Current ( A )

0.001

0.010

0.100

1.000

10.000

100.000

0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0

VF – Forward Voltage ( V )16392

Tj=25°C

Tj=175°C

0.0

0.5

1.0

1.5

2.0

2.5

3.0

3.5

Tamb - Ambient Temperature (°C)16393

Average Forward Current (A)

IFAV -

04020 1601401201008060 180

VR = VRRM

half sinewave

RthJA = 25 K/W

l = 10 mm

RthJA = 70 K/W

PCB: d = 25 mm

100

1000

25 50 75 100 125 150 175

Tj – Juncti on Temperature ( °C )

16394

VR = V RRM

I – R everse Current ( A )

1N5624, 1N5625, 1N5626, 1N5627

www.vishay.com Vishay Semiconductors

Rev. 1.6, 05-Sep-13 3Document Number: 86063

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Fig. 5 - Max. Reverse Power Dissipation vs. Junction Temperature Fig. 6 - Diode Capacitance vs. Reverse Voltage

PACKAGE DIMENSIONS in millimeters (inches): SOD-64

100

150

200

250

300

25 50 75 100 125 150 175

Tj – Junction T emperature ( °C )16395

VR = V RRM

P – R everse Power Dissipation ( mW )

PR–Limit

@ 100%V R

PR–Limit

@ 80%V R

100

0.1 1.0 10.0 100.0

VR – R everse V ol tage ( V )16396

C – D i ode C apacitance ( pF )

f=1MHz

Cathode Identification 4.3 (0.168) max.

1.35 (0.053) max.

4 (0.156) max.

Sintered Glass Case

SOD-64

26(1.014) min. 26 (1.014) min.

Document-No.: 6.563-5006.4-4

Rev. 3 - Date: 09.February.2005

94 9587

Legal Disclaimer Notice

www.vishay.com Vishay

Revision: 08-Feb-17 1Document Number: 91000

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