BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Rev. 3 -- 28 February 2011 Product data sheet 1. Product profile 1.1 General description 10 W LDMOS power transistor for base station applications at frequencies from 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz. Table 1. Typical performance RF performance at Tcase = 25 C in a class-AB production test circuit. Mode of operation 1-carrier N-CDMA[1] IS-95 f VDS PL(AV) Gp D ACPR885k ACPR1980k (MHz) (V) (W) (dB) (%) (dBc) (dBc) 2500 to 2700 28 2 19 20 -49[2] -64[2] 24.8 -47[2] -64[2] 2300 to 2400 28 2 22.5 [1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13). PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz. [2] Measured within 30 kHz bandwidth. 1.2 Features and benefits Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels [Walsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and an IDq of 130 mA: Qualified up to a maximum VDS operation of 32 V Integrated ESD protection Excellent ruggedness High efficiency Excellent thermal stability Designed for broadband operation Internally matched for ease of use Low gold plating thickness on leads Compliant to Directive 2002/95/EC, regarding Restriction of Hazardous Substances (RoHS) 1.3 Applications RF power amplifiers for base stations and multi carrier applications in the 2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz frequency range. BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 2. Pinning information Table 2. Pinning Pin Description Simplified outline Graphic symbol BLF6G27-10 (SOT975B) 1 drain 2 gate 3 source 1 1 [1] 2 3 sym112 2 BLF6G27-10G (SOT975C) 1 drain 2 gate 3 source 1 1 [1] 2 3 sym112 2 [1] Connected to flange. 3. Ordering information Table 3. Ordering information Type number Package Name Description - earless flanged ceramic package; 2 leads SOT975B BLF6G27-10G - earless flanged ceramic package; 2 leads SOT975C BLF6G27-10 Version 4. Limiting values Table 4. Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134). BLF6G27-10_BLF6G27-10G Product data sheet Symbol Parameter Conditions Min Max Unit VDS drain-source voltage - 65 V VGS gate-source voltage -0.5 +13 V ID drain current - 3.5 A Tstg storage temperature -65 +150 C Tj junction temperature - 225 C All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 2 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 5. Thermal characteristics Table 5. Thermal characteristics Symbol Parameter Conditions Type Rth(j-case) thermal resistance from Tcase = 80 C; BLF6G27-10 junction to case PL = 10 W (CW) BLF6G27-10G Typ Unit 4.0 K/W 4.0 K/W 6. Characteristics Table 6. Characteristics Tj = 25 C per section; unless otherwise specified. Symbol Parameter Conditions Min Typ Max Unit V(BR)DSS drain-source breakdown voltage VGS = 0 V; ID = 0.18 mA 65 - - V VGS(th) gate-source threshold voltage VDS = 10 V; ID = 18 mA 1.4 1.9 2.4 V IDSS drain leakage current VGS = 0 V; VDS = 28 V - - 1.4 A IDSX drain cut-off current VGS = VGS(th) + 3.75 V; VDS = 10 V 2.7 - - A IGSS gate leakage current VGS = 11 V; VDS = 0 V - - 140 nA gfs forward transconductance VDS = 10 V; ID = 0.9 A 0.8 - - S RDS(on) drain-source on-state resistance VGS = VGS(th) + 3.75 V; ID = 0.6 A 328 - 1256 m Crs feedback capacitance VGS = 0 V; VDS = 28 V; f = 1 MHz - 3.6 - pF 7. Application information Table 7. Application information Mode of operation: Single carrier N-CDMA with pilot, paging, sync and 6 traffic channels (Walsh codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz; f1 = 2500 MHz; f2 = 2600 MHz; f3 = 2700 MHz; RF performance at VDS = 28 V; IDq = 130 mA; Tcase = 25 C; unless otherwise specified; in a class-AB production circuit. Symbol Parameter PL(AV) average output power Gp power gain PL(AV) = 2 W RLin input return loss PL(AV) = 2 W D drain efficiency PL(AV) = 2 W ACPR885k ACPR1980k [1] Conditions Min Typ Max Unit - 2 - 17.5 19 - dB - -10 - dB % 18 20 PL(AV) = 2 W [1] - -49 -46 dBc adjacent channel power ratio (1980 kHz) PL(AV) = 2 W [1] - -64 -61 dBc adjacent channel power ratio (885 kHz) - W Measured within 30 kHz bandwidth. 7.1 Ruggedness in class-AB operation The BLF6G27-10 and BLF6G27-10G are capable of withstanding a load mismatch corresponding to VSWR = 10 : 1 through all phases under the following conditions: VDS = 28 V; IDq = 130 mA; PL = PL(1dB); f = 2700 MHz. BLF6G27-10_BLF6G27-10G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 3 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 7.2 NXP WiMAX signal 7.2.1 WiMAX signal description frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame; frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8; FFT = 1024; zone type = PUSC; = 97.7 %; number of symbols = 46; number of subchannels = 30; PAR = 9.5 dB. Preamble: 1 symbol x 30 subchannels; PL = PL(nom) + 3.86 dB. Table 8. Frame structure Frame contents Modulation technique Data length Zone 0 FCH 2 symbols x 4 subchannels QPSK1/2 3 bit Zone 0 data 2 symbols x 26 subchannels 64QAM3/4 692 bit Zone 0 data 44 symbols x 30 subchannels 64QAM3/4 10000 bit 7.2.2 Graphs 001aaj351 16 001aaj352 25 50 D (%) Gp (dB) EVM (%) 23 40 12 Gp 21 30 8 19 20 17 10 4 D 0 10-1 1 15 10-1 10 PL (W) EVM as a function of load power; typical values BLF6G27-10_BLF6G27-10G Product data sheet 10 PL(AV) (W) VDS = 28 V; IDq = 130 mA; f = 2600 MHz. Fig 1. 0 1 VDS = 28 V; IDq = 130 mA; f = 2600 MHz. Fig 2. Power gain and drain efficiency as function of average load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 4 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 001aaj353 -20 ACPR (dBc) ACPR10M -30 -40 ACPR20M -50 ACPR30M -60 10-1 1 10 PL(AV) (W) VDS = 28 V; IDq = 130 mA; f = 2600 MHz. Fig 3. Adjacent channel power ratio as a function of average load power; typical values 7.3 Single carrier NA IS-95 broadband performance at 2 W average 7.3.1 Graphs 001aaj354 25 23 D (%) Gp (dB) 23 001aaj355 -45 (2) ACPR (dBc) 22 -50 21 -55 (1) ACPR885k D 21 (1) Gp (2) 19 20 -60 ACPR1500k (2) 17 19 15 2500 2540 2580 2620 18 2660 2700 f (MHz) -65 -70 2500 VDS = 28 V; IDq = 130 mA; Single Carrier IS-95; PAR = 9.7 dB at 0.01 % probability. (1) ACPR1980k 2540 2580 2620 2660 2700 f (MHz) VDS = 28 V; IDq = 130 mA; single carrier IS-95; PAR = 9.7 dB at .01 % probability. (1) Low frequency component (2) High frequency component Fig 4. Power gain and drain efficiency as function of frequency; typical values BLF6G27-10_BLF6G27-10G Product data sheet Fig 5. Adjacent channel power ratio as a function of frequency; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 5 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 001aaj356 24 50 D (%) Gp (dB) 22 40 Gp 20 001aaj357 -35 ACPR (dBc) -45 (2) (1) 30 -55 18 ACPR885k 20 ACPR1500k -65 16 10 D 14 10-1 0 1 10 (1) (2) ACPR1980k -75 10-1 (2) (1) 1 10 PL(AV) (W) PL(AV) (W) VDS = 28 V; IDq = 130 mA; f = 2600 MHz; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz; IBW = 30 kHz. VDS = 28 V; IDq = 130 mA; f = 2600 MHz; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. (1) Low frequency component (2) High frequency component Fig 6. Power gain and drain efficiency as function of load power; typical values 001aaj358 25 Gp (dB) Fig 7. Adjacent channel power ratio as a function of load power; typical values 001aaj359 0.16 Pi (W) 23 (2) (1) 0.12 (3) (3) (2) 21 (1) 0.08 19 0.04 17 15 10-1 1 0 10-1 10 PL (W) VDS = 28 V; IDq = 130 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. (1) f = 2500 MHz (1) f = 2500 MHz (2) f = 2600 MHz (2) f = 2600 MHz (3) f = 2700 MHz (3) f = 2700 MHz Power gain as a function of load power; typical values BLF6G27-10_BLF6G27-10G Product data sheet 10 PL (W) VDS = 28 V; IDq = 130 mA; single carrier IS-95; PAR = 9.7 dB at 0.01 % probability; channel bandwidth = 1.23 MHz. Fig 8. 1 Fig 9. Input power as a function of load power; typical values All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 6 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 8. Test information L1 C8 R2 C5 C2 C6 C3 R1 C1 C7 C4 BLF6G27-10 BLF6G27-10 Input Rev 2 NXP Output Rev 2 NXP PCB1 PCB2 001aaj360 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 10. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10 BLF6G27-10_BLF6G27-10G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 7 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor L1 C8 R2 C2 C5 C6 C3 R1 C1 C7 C4 BLF6G27-10G BLF6G27-10G Input Rev 1 NXP Output Rev 1 NXP PCB1 PCB2 001aaj361 Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with r = 3.5 and thickness = 0.76 mm. See Table 9 for list of components. Fig 11. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10G Table 9. List of components For test circuit, see Figure 10 and Figure 11. BLF6G27-10_BLF6G27-10G Product data sheet Component Description Value Remarks C1, C3, C5, C7 multilayer ceramic chip capacitor 22 pF ATC 100A C2 multilayer ceramic chip capacitor 1.5 F TDK C4 multilayer ceramic chip capacitor 1.6 pF ATC 100A C6 multilayer ceramic chip capacitor 10 F; 50 V TDK C8 electrolytic capacitor 220 F; 63 V Elco L1 ferrite SMD bead - Ferroxcube bead R1, R2 SMD resistor 8.2 Thin film All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 8 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor Table 10. Measured test circuit impedances f Zi Zo (GHz) () () 2.50 5.32 - j8.61 9.46 - j6.99 2.55 4.85 - j8.09 9.44 - j7.41 2.60 4.40 - j7.55 9.32 - j7.86 BLF6G27-10 2.65 3.98 - j7.00 9.10 - j8.31 2.70 3.59 - j6.43 8.77 - j8.75 2.50 5.67 - j13.62 10.70 - j7.38 2.55 5.06 - j12.79 10.61 - j8.00 2.60 4.55 - j11.98 10.38 - j8.63 2.65 4.10 - j11.19 10.00 - j9.24 2.70 3.71 - j10.43 9.49 - j9.79 BLF6G27-10G BLF6G27-10_BLF6G27-10G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 9 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 9. Package outline Earless flanged ceramic package; 2 leads SOT975B D A F U1 D1 A c 1 E1 H U2 E 2 w1 b M 0 A Q M 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H Q U1 U2 w1 mm 3.63 3.05 3.38 3.23 0.23 0.18 6.55 6.40 6.93 6.78 6.55 6.40 6.93 6.78 0.23 0.18 11.05 10.80 0.76 0.66 6.43 6.27 6.43 6.27 0.51 0.143 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.435 0.030 0.253 0.253 0.120 0.127 0.007 0.252 0.267 0.252 0.267 0.007 0.425 0.026 0.247 0.247 0.02 inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 06-11-03 07-09-28 SOT975B Fig 12. Package outline SOT975B BLF6G27-10_BLF6G27-10G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 10 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor Earless flanged ceramic package; 2 leads SOT975C D A F U1 D1 A c 1 L Lp E1 H U2 E 2 w1 b M A M Q 0 5 10 mm scale DIMENSIONS (millimetre dimensions are derived from the original inch dimensions) UNIT A b c D D1 E E1 F H L Lp Q U1 U2 w1 mm 3.63 3.05 3.38 3.23 0.23 0.18 6.55 6.40 6.93 6.78 6.55 6.40 6.93 6.78 0.23 0.18 10.29 10.03 1.65 1.02 0.51 +0.05 -0.05 6.43 6.27 6.43 6.27 0.51 7 0 0.143 0.133 0.009 0.258 0.273 0.258 0.273 0.009 0.405 0.040 +0.002 0.253 0.253 0.065 0.020 0.120 0.127 0.007 0.252 0.267 0.252 0.267 0.007 0.395 0.020 -0.002 0.247 0.247 7 0 inches OUTLINE VERSION REFERENCES IEC JEDEC JEITA EUROPEAN PROJECTION ISSUE DATE 08-05-20 08-07-10 SOT975C Fig 13. Package outline SOT975C BLF6G27-10_BLF6G27-10G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 11 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 10. Abbreviations Table 11. Abbreviations Acronym Description CCDF Complementary Cumulative Distribution Function CW Continuous Wave EVM Error Vector Magnitude FCH Frame Control Header FFT Fast Fourier Transform IBW Instantaneous BandWidth IS-95 Interim Standard 95 LDMOS Laterally Diffused Metal-Oxide Semiconductor NA North American N-CDMA Narrowband Code Division Multiple Access PAR Peak-to-Average power Ratio PUSC Partial Usage of SubChannels RF Radio Frequency SMD Surface Mounted Device VSWR Voltage Standing-Wave Ratio WCS Wireless Communications Service WiMAX Worldwide Interoperability for Microwave Access 11. Revision history Table 12. Revision history Document ID Release date Data sheet status Change notice Supersedes BLF6G27-10_BLF6G27-10G v.3 20110228 - Modifications: * * * * Product data sheet BLF6G27-10_BLF6G27-10G v.2 Section 1.1 on page 1: added `2300 MHz to 2400 MHz' Table 1 on page 1: added `IS-95' row to table on page 1: removed caution remark ESD Section 1.3 on page 1: added `2300 MHz to 2400 MHz' BLF6G27-10_BLF6G27-10G v.2 20101202 Product data sheet - BLF6G27-10_BLF6G27-10G v.1 BLF6G27-10_BLF6G27-10G v.1 20090204 Product data sheet - - BLF6G27-10_BLF6G27-10G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 12 of 15 BLF6G27-10; BLF6G27-10G NXP Semiconductors WiMAX power LDMOS transistor 12. 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Export might require a prior authorization from national authorities. BLF6G27-10_BLF6G27-10G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 13 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor Non-automotive qualified products -- Unless this data sheet expressly states that this specific NXP Semiconductors product is automotive qualified, the product is not suitable for automotive use. It is neither qualified nor tested in accordance with automotive testing or application requirements. NXP Semiconductors accepts no liability for inclusion and/or use of non-automotive qualified products in automotive equipment or applications. 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Contact information For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com BLF6G27-10_BLF6G27-10G Product data sheet All information provided in this document is subject to legal disclaimers. Rev. 3 -- 28 February 2011 (c) NXP B.V. 2011. All rights reserved. 14 of 15 NXP Semiconductors BLF6G27-10; BLF6G27-10G WiMAX power LDMOS transistor 14. Contents 1 1.1 1.2 1.3 2 3 4 5 6 7 7.1 7.2 7.2.1 7.2.2 7.3 7.3.1 8 9 10 11 12 12.1 12.2 12.3 12.4 13 14 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 General description . . . . . . . . . . . . . . . . . . . . . 1 Features and benefits . . . . . . . . . . . . . . . . . . . . 1 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 Thermal characteristics . . . . . . . . . . . . . . . . . . 3 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 3 Application information. . . . . . . . . . . . . . . . . . . 3 Ruggedness in class-AB operation . . . . . . . . . 3 NXP WiMAX signal . . . . . . . . . . . . . . . . . . . . . . 4 WiMAX signal description . . . . . . . . . . . . . . . . . 4 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 Single carrier NA IS-95 broadband performance at 2 W average . . . . . . . . . . . . . . 5 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 7 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 Abbreviations . . . . . . . . . . . . . . . . . . . . . . . . . . 12 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13 Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14 Contact information. . . . . . . . . . . . . . . . . . . . . 14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 Please be aware that important notices concerning this document and the product(s) described herein, have been included in section `Legal information'. (c) NXP B.V. 2011. All rights reserved. For more information, please visit: http://www.nxp.com For sales office addresses, please send an email to: salesaddresses@nxp.com Date of release: 28 February 2011 Document identifier: BLF6G27-10_BLF6G27-10G