1. Product profile
1.1 General description
10 W LDMOS power tra n sisto r for ba se station applicat ion s at freq ue n cie s from
2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz.
[1] Single carrier N-CDMA with pilot, paging sync and 6 traffic channels (Walsh codes 8 - 13).
PAR = 9.7 dB at 0.01 % probability on CCDF. Channel bandwidth is 1.23 MHz.
[2] Measured within 30 kHz bandwidth.
1.2 Features and benefits
Typical 1-carrier N-CDMA performance (Single carrier N-CDMA with pilot, paging,
sync and 6 traffic channels [W alsh codes 8 - 13]. PAR = 9.7 dB at 0.01 % probability on
CCDF. Channel bandwidth is 1.23 MHz), a supply voltage of 28 V and
an IDq of 130 mA:
Qualified up to a maximum VDS operat ion of 32 V
Integrated ESD protection
Excellent ruggedness
High efficiency
Excellent thermal stability
Designed for broadband operation
Internally matched for ease of use
Low gold plating thickness on leads
Compliant to Directive 2002/95/EC, rega rd in g Re str ictio n of Haza rd ous Sub s tances
(RoHS)
1.3 Applications
RF power amplifiers for base stations and multi carrier applications in the
2300 MHz to 2400 MHz and 2500 MHz to 2700 MHz frequency range.
BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
Rev. 3 — 28 February 2011 Product data sheet
Table 1. Typical performance
RF performance at Tcase = 25
°
C in a class-AB production test circuit.
Mode of operation f VDS PL(AV) GpηDACPR885k ACPR1980k
(MHz) (V) (W) (dB) (%) (dBc) (dBc)
1-carrier N-CDMA[1] 2500 to 2700 28 2 19 20 −49[2] −64[2]
IS-95 2300 to 2400 28 2 22.5 24.8 −47[2] −64[2]
BLF6G27-10_BLF6G27-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 February 2011 2 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF6G27-10 (SOT975 B)
1drain
2gate
3source [1]
BLF6G27-10G (SOT975C)
1drain
2gate
3source [1]
1
2
sym11
2
1
3
2
1
2
sym11
2
1
3
2
Table 3. Ordering informati on
Type number Package
Name Description Version
BLF6G27-10 - earless flanged ceramic package; 2 leads SOT975B
BLF6G27-10G - e arless flanged ceramic package; 2 leads SOT975C
Table 4. Limiting va lues
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 65 V
VGS gate-source voltage −0.5 +13 V
IDdrain current - 3.5 A
Tstg storage temperature −65 +150 °C
Tjjunction temperature - 225 °C
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Product data sheet Rev. 3 — 28 February 2011 3 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
5. Thermal characteristics
6. Characteristics
7. Application information
[1] Measured within 30 kHz bandwidth.
7.1 Ruggedness in class-AB operation
The BLF6G27-10 and BLF6G27-10G are capable of withstanding a load mismatch
corresponding to VSWR = 10 : 1 through all phases under the following conditions:
VDS =28V; I
Dq =130mA; P
L = PL(1dB); f = 2700 MHz.
Table 5. Thermal characteristics
Symbol Parameter Conditions Type Typ Unit
Rth(j-case) thermal resist ance from
junction to case Tcase =80°C;
PL= 10 W (CW) BLF6G27-10 4.0 K/W
BLF6G27-10G 4.0 K/W
Table 6. Charac teristics
Tj = 25
°
C per section; unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown
voltage VGS =0V; I
D=0.18mA65--V
VGS(th) gate-source threshold voltage VDS =10 V; I
D=18mA 1.4 1.9 2.4 V
IDSS drain leakage current VGS =0V; V
DS =28V--1.4μA
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V 2.7--A
IGSS gate leakage current VGS =11V; V
DS = 0 V - - 140 nA
gfs forward transcondu ctance VDS =10V; I
D= 0.9 A 0.8 - - S
RDS(on) drain-source on-state
resistance VGS =V
GS(th) + 3.75 V;
ID=0.6A 328 - 1256 mΩ
Crs feedback capacitance VGS =0V; V
DS =28V;
f=1MHz -3.6-pF
Table 7. Applic ation information
Mode of operation: Single carri er N-C DMA with pilot, paging, sync and 6 traffic channels (Walsh
codes 8 - 13). PAR 9.7 dB at 0.01 % probability on CCDF; Channel Bandwidth is 1.23 MHz;
f1= 250 0 MHz; f2= 2600 MHz; f3= 2700 MHz; RF performance at VDS = 28 V; IDq = 130 mA;
Tcase =25
°
C; unless otherwise specified; in a class-AB production circuit.
Symbol Parameter Conditions Min Typ Max Unit
PL(AV) average output power - 2 - W
Gppower gain PL(AV) = 2 W 17.5 19 - dB
RLin input return loss PL(AV) =2W - −10 - dB
ηDdrain efficiency PL(AV) =2W 18 20 - %
ACPR885k adjacent channel power ratio (8 85 kHz) PL(AV) =2W [1] -−49 −46 dBc
ACPR1980k adjacent channel power ratio (1980 kHz) PL(AV) =2W [1] -−64 −61 dBc
BLF6G27-10_BLF6G27-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 February 2011 4 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
7.2 NXP WiMAX signal
7.2.1 WiMAX signal description
frame duration = 5 ms; bandwidth = 10 MHz; sequency = 1 frame;
frequency band = WCS; sampling rate = 11.2 MHz; n = 8 / 7; G = Tg / Tb = 1 / 8;
FFT = 1024; zone type = PUSC; δ = 97.7 %; number of symbols = 46;
number of subchannels = 30; PAR = 9.5 dB.
Preamble: 1 symbol × 30 subchannels; PL = PL(nom) + 3.86 dB.
7.2.2 Graphs
Table 8. Fr ame structure
Frame conte n ts Modulation techni que Data length
Zone 0 FCH 2 symbols × 4 subchan nels QPSK1/2 3 bit
Zone 0 data 2 symbols × 26 subchannels 64QAM3/4 692 bit
Zone 0 data 44 symbols × 30 subchannels 64QAM3/4 10000 bit
VDS =28V; I
Dq = 130 mA; f = 2600 MHz. VDS =28V; I
Dq = 130 mA; f = 2600 MHz.
Fig 1. EVM as a function of load power;
typical values Fig 2. Power gain and drain efficiency as function of
average load power; typical values
PL (W)
10−1101
001aaj351
8
4
12
16
EVM
(%)
0
001aaj352
19
21
17
23
25
Gp
(dB)
Gp
ηD
(%)
15
20
30
10
40
50
0
PL(AV) (W)
10−1101
ηD
BLF6G27-10_BLF6G27-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 February 2011 5 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
7.3 Single carrier NA IS-95 broadband performance at 2 W average
7.3.1 Graphs
VDS =28V; I
Dq = 130 mA; f = 2600 MHz.
Fig 3. Adjacent channel powe r ratio as a fun ct ion of av erage loa d po we r; typi ca l v al ue s
PL(AV) (W)
10−1101
001aaj353
−40
−50
−30
−20
ACPR
(dBc)
−60
ACPR10M
ACPR20M
ACPR30M
VDS =28V; I
Dq = 130 mA; Single Carrier IS-95;
PAR = 9.7 dB at 0.01 % probability. VDS =28V; I
Dq = 130 mA; single carrier IS-95;
PAR = 9.7 dB at .01 % probability.
(1) Low frequency component
(2) High frequency component
Fig 4. Power gain and drain efficiency as function of
frequency; typical values Fig 5. Adjacen t channel power ratio as a function of
frequency; typical values
f (MHz)
2500 270026602580 26202540
001aaj354
19
21
17
23
25
Gp
(dB)
15
ηD
(%)
20
21
19
22
23
18
ηD
Gp
f (MHz)
2500 270026602580 26202540
001aaj355
−60
−55
−65
−50
−45
ACPR
(dBc)
−70
ACPR885k
ACPR1500k
ACPR1980k
(2)
(1)
(1)
(2)
(2)
(1)
BLF6G27-10_BLF6G27-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 February 2011 6 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
VDS =28V; I
Dq = 130 mA; f = 2600 MHz;
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
VDS =28V; I
Dq = 130 mA; f = 2600 MHz;
single carrier IS-95; PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz; IBW = 30 kHz.
(1) Low frequency component
(2) High frequency component
Fig 6. Power gain and drain efficiency as function of
load power; typical values Fig 7. Adjacen t channel power ratio as a function of
load power; typical values
001aaj356
18
20
16
22
24
Gp
(dB)
Gp
ηD
(%)
14
20
30
10
40
50
0
PL(AV) (W)
10−1101
ηD
PL(AV) (W)
10−1101
001aaj357
−55
−65
−45
−35
ACPR
(dBc)
−75
ACPR885k
ACPR1500k
ACPR1980k
(2)
(1)
(1)
(2)
(2)
(1)
VDS =28V; I
Dq = 130 mA; single carrier IS-95;
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
VDS =28V; I
Dq = 130 mA; single carrier IS-95;
PAR = 9.7 dB at 0.01 % probability;
channel bandwidth = 1.23 MHz.
(1) f = 2500 MHz
(2) f = 2600 MHz
(3) f = 2700 MHz
Fig 8. Power gain as a function of load power;
typical values Fig 9. Input power as a function of load power;
typical values
001aaj358
19
21
17
23
25
Gp
(dB)
15
PL (W)
10−1101
(2)
(1)
(3)
PL (W)
10−1101
001aaj359
0.08
0.04
0.12
0.16
Pi
(W)
0
(3)
(2)
(1)
BLF6G27-10_BLF6G27-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 February 2011 7 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
8. Test information
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and
thickness = 0.76 mm.
See Table 9 for list of components.
Fig 10. Component layout for 2500 MHz to 2700 MHz test circuit BLF6G27-10
001aaj36
0
BLF6G27-10
Output Rev 2
NXP
BLF6G27-10
Input Rev 2
NXP
C2
C1
C4
C5
C6
R2
C8
L1
C7
PCB2PCB1
C3
R1
BLF6G27-10_BLF6G27-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 February 2011 8 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
Striplines are on a double copper-clad Taconic RF35 Printed-Circuit Board (PCB) with εr = 3.5 and
thickness = 0.76 mm.
See Table 9 for list of components.
Fig 11. Component layout for 250 0 MHz to 2700 MHz test circuit BLF6G27-10G
Table 9. List of components
For test circuit, see Figure 10 and Figure 11.
Component Description Value Remarks
C1, C3, C5, C7 multilayer ceramic chip capacitor 22 pF ATC 100A
C2 multilayer ceramic chip capacitor 1.5 μFTDK
C4 multilayer ceramic chip capacitor 1.6 pF ATC 100A
C6 multilayer ceramic chip capacitor 10 μF; 50 V TDK
C8 electrolytic capacitor 220 μF; 63 V Elco
L1 ferrite SMD bead - Ferroxcube bead
R1, R2 SMD resistor 8.2 ΩThin film
001aaj36
1
BLF6G27-10G
Output Rev 1
NXP
BLF6G27-10G
Input Rev 1
NXP
C2
C1
C4
C5
C6
R2
C8
L1
C7
PCB2PCB1
C3
R1
BLF6G27-10_BLF6G27-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 February 2011 9 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
Table 10. Measured test circuit impedances
f ZiZo
(GHz) (Ω) (Ω)
BLF6G27-10
2.50 5.32 − j8.61 9.46 − j6.99
2.55 4.85 − j8.09 9.44 − j7.41
2.60 4.40 − j7.55 9.32 − j7.86
2.65 3.98 − j7.00 9.10 − j8.31
2.70 3.59 − j6.43 8.77 − j8.75
BLF6G27-10G
2.50 5.67 − j13.62 10.70 − j7.38
2.55 5.06 − j12.79 10.61 − j8.00
2.60 4.55 − j11.98 10.38 − j8.63
2.65 4.10 − j11.19 10.00 − j9.24
2.70 3.71 − j10.43 9.49 − j9.79
BLF6G27-10_BLF6G27-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 February 2011 10 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
9. Package outline
Fig 12. Package outline SOT975B
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT975B
SOT975
B
06-11-03
07-09-28
UNIT A
mm 3.63
3.05
3.38
3.23
0.23
0.18
6.93
6.78
6.55
6.40
6.93
6.78
0.23
0.18
0.76
0.66
6.43
6.27 0.51
b
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
E
arless flanged ceramic package; 2 leads
A
0 5 10 mm
scale
c D
6.55
6.40
D1E E1F H
11.05
10.80
Q U1U2
6.43
6.27
w1
inches 0.143
0.120
0.133
0.127
0.009
0.007
0.273
0.267
0.258
0.252
0.273
0.267
0.009
0.007
0.030
0.026
0.253
0.247 0.02
0.258
0.252
0.435
0.425
0.253
0.247
b
H
Q
c
E
E1U2
D
AF
D1
U1
1
2
AM
w1M
BLF6G27-10_BLF6G27-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 February 2011 11 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
Fig 13. Package outline SOT975C
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC JEITA
SOT975C
SOT975
C
UNIT A
mm 3.63
3.05
3.38
3.23
0.23
0.18
6.93
6.78
6.55
6.40
6.93
6.78
0.23
0.18 1.65 1.02
0.51
6.43
6.27
b
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
E
arless flanged ceramic package; 2 leads
A
0 5 10 mm
scale
c D
6.55
6.40
D1E E1F H
10.29
10.03
L LpQ
+0.05
−0.05
U1
inches 0.143
0.120
0.133
0.127
0.009
0.007
0.273
0.267
0.258
0.252
0.273
0.267
0.009
0.007 0.065 0.040
0.020
0.253
0.247
0.258
0.252
0.405
0.395
+0.002
−0.002
6.43
6.27 0.51
U2w1α
7°
0°
0.253
0.247 0.020 7°
0°
D
AF
D1
U1
b
H
1
2
AM
w1M
Q
c
E
E1U2
α
Lp
L
08-05-20
08-07-10
BLF6G27-10_BLF6G27-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 February 2011 12 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
10. Abbreviations
11. Revision history
Table 11. Abbreviations
Acronym Description
CCDF Complementary Cumulative Distribution Function
CW Continuous Wave
EVM Error Vector Magnitude
FCH Frame Control Header
FFT Fast Fourier Transform
IBW Instantaneous BandWidth
IS-95 Interim Standard 95
LDMOS Laterally Diffused Metal-Oxide Semiconductor
NA North American
N-CDMA Narrowband Code Division Multiple Access
PAR Peak-to-Average power Ratio
PUSC Partial Usage of SubChannels
RF Radio Frequency
SMD Surface Mounted Device
VSWR Voltage Standing-Wave Ratio
WCS Wireless Communications Service
WiMAX Worldwide Interoperability for Microwave Access
Table 12. Revision history
Document ID Release date D ata sheet status Change notice Supersedes
BLF6G27-10_BLF6G27-10G v.3 20110228 Product data sheet - BLF6G27-10_BLF6G27-10G v.2
Modifications: •Section 1.1 on page 1 : added ‘2300 MHz to 2400 MHz’
•Table 1 on page 1: added ‘IS-95’ row to table
•on page 1: removed caution remark ESD
•Section 1.3 on page 1 : added ‘2300 MHz to 2400 MHz’
BLF6G27-10_BLF6G27-10G v.2 20101202 Product data sheet - BLF6G27-10_BLF6G27-10G v.1
BLF6G27-10_BLF6G27-10G v.1 20090204 Product data sheet - -
BLF6G27-10_BLF6G27-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 February 2011 13 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
12. Legal information
12.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is document m ay have cha nged since thi s document w as publish ed and may di ffe r in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
12.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not b e relied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semicond uctors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall pre va il.
Product specificat ion — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
12.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors does not give any
representations or warrant ies, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information.
In no event shall NXP Semiconductors be liable for any indirect, incidenta l ,
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profits, lost savings, business interruption, costs related to the removal or
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Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ ag gregate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
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Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
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Suitability for use — NXP Semiconductors products are not designed,
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malfunction of an NXP Semiconductors pro duct can reasonably be expected
to result in perso nal injury, death or severe property or en vironmental
damage. NXP Semiconductors accepts no liab ility for inclusion and/or use of
NXP Semiconductors products in such equipment or application s and
therefore such inclusion and/or use is at the customer’s own risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty that such applications will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or customer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Custo mers should provide appropriate
design and operating safeguards to minimize the risks associate d with t heir
applications and products.
NXP Semiconductors does not accept any liabil ity related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by customer’s
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testing for the customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
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customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanently and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semiconductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
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applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
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Export control — This document as well as the item(s) described herein
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Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contain s data from the objective specification for product development .
Preliminary [short] dat a sheet Qualification This document contains data from the preliminary specification.
Product [short] data sheet Production This document contains the product specification.
BLF6G27-10_BLF6G27-10G All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 3 — 28 February 2011 14 of 15
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors prod uct is automotive qualified,
the product is not suitable for automotive use. It is neither qua lified nor tested
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standards, custome r
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such au tomotive applications, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconduct ors for an y
liability, damages or failed product claims resulting from customer design an d
use of the product for automotive applications beyond NXP Semiconductors’
standard warranty and NXP Semiconductors’ product specif ications.
12.4 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respective ow ners.
13. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
NXP Semiconductors BLF6G27-10; BLF6G27-10G
WiMAX power LDMOS transistor
© NXP B.V. 2011. All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 28 February 2011
Document identifier: BLF6G27-10_BLF6G27-10G
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
14. Contents
1 Product profile. . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
7 Application information. . . . . . . . . . . . . . . . . . . 3
7.1 Ruggedness in class-AB operation . . . . . . . . . 3
7.2 NXP WiMAX signal. . . . . . . . . . . . . . . . . . . . . . 4
7.2.1 WiMAX signal description. . . . . . . . . . . . . . . . . 4
7.2.2 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4
7.3 Single carrier NA IS-95 broadband
performance at 2 W average . . . . . . . . . . . . . . 5
7.3.1 Graphs . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
8 Test information. . . . . . . . . . . . . . . . . . . . . . . . . 7
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10
10 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 12
11 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 12
12 Legal information. . . . . . . . . . . . . . . . . . . . . . . 13
12.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 13
12.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 13
12.4 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 14
13 Contact information. . . . . . . . . . . . . . . . . . . . . 14
14 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
