MJ10005 - ON Semiconductor

SWITCHMODESeries

NPN Silicon Power Darlington

Transistor with Base-Emitter

Speedup Diode

The MJ10005 Darlington transistor is designed for high–voltage,

high–speed, power switching in inductive circuits where fall time is

critical. It is particularly suited for line operated switchmode

applications such as:

•Switching Regulators

•Inverters

•Solenoid and Relay Drivers

•Motor Controls

•Deflection Circuits

•Fast Turn–Off Times

40 ns Inductive Fall Time — 25C (Typ)

650 ns Inductive Storage Time — 25C (Typ)

Operating Temperature Range –65 to +200C

•100C Performance Specified for:

Reversed Biased SOA with Inductive Loads

Switching Times with Inductive Loads

Saturation Voltages

Leakage Currents

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Value

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎÎ

400

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEX

ÎÎÎÎÎ

450

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEV

ÎÎÎÎÎ

500

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎ

8.0

ÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

— Peak (1)

ÎÎÎÎÎ

IC

ICM

ÎÎÎÎÎ

20

30

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Current — Continuous

— Peak (1)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IB

IBM

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

2.5

5.0

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25C

@ TC = 100C

Derate above 25C

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

PD

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

175

100

1.0

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

Watts

W/C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎ

–65 to +200

ÎÎÎÎ

C

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Max

ÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

RθJC

ÎÎÎÎÎ

1.0

ÎÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Maximum Lead Temperature for Soldering Purposes 1/8″ from Case for 5 Seconds

ÎÎÎÎÎ

TL

ÎÎÎÎÎ

275

ÎÎÎÎ

C

(1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle  10%.

Preferred devices are ON Semiconductor recommended choices for future use and best overall value.

ON Semiconductor

 Semiconductor Components Industries, LLC, 2001

March, 2001 – Rev. 4 1Publication Order Number:

MJ10005/D

20 AMPERE

NPN SILICON

POWER DARLINGTON

TRANSISTORS

400 VOLTS

175 WATTS

MJ10005

*ON Semiconductor Preferred Device

*

CASE 1–07

TO–204AA

(TO–3)

≈100 ≈15

MJ10005

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2

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise noted).

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (Table 1)

(IC = 250 mA, IB = 0, Vclamp = Rated VCEO)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

400

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Emitter Sustaining Voltage (Table 1, Figure 12)

(IC = 2.0 A, Vclamp = Rated VCEX, TC = 100C)

(IC = 10 A, Vclamp = Rated VCEX, TC = 100C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCEX(sus)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

450

325

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCEV = Rated Value, VBE(off) = 1.5 Vdc)

(VCEV = Rated Value, VBE(off) = 1.5 Vdc, TC = 150C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

ICEV

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

0.25

5.0

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEV, RBE = 50 Ω, TC = 100C)

ÎÎÎÎÎ

ICER

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎ

5.0

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 2.0 Vdc, IC = 0)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

IEBO

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

175

ÎÎÎ

Î

ÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SECOND BREAKDOWN

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Second Breakdown Collector Current with base forward biased

ÎÎÎÎÎ

IS/b

ÎÎÎÎÎÎÎÎÎÎÎ

See Figure 11

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS (2)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(IC = 5.0 Adc, VCE = 5.0 Vdc)

(IC = 10 Adc, VCE = 5.0 Vdc)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hFE

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

50

40

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

600

400

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Emitter Saturation Voltage

(IC = 10 Adc, IB = 400 mAdc)

(IC = 20 Adc, IB = 2.0 Adc)

(IC = 10 Adc, IB = 400 mAdc, TC = 100C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VCE(sat)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

1.9

3.0

2.0

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base Emitter Saturation Voltage

(IC = 10 Adc, IB = 400 mAdc)

(IC = 10 Adc, IB = 400 mAdc, TC = 100C)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

VBE(sat)

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

2.5

ÎÎÎ

Î

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Diode Forward Voltage (1)

(IF = 10 Adc)

ÎÎÎÎÎ

Vf

ÎÎÎÎ

—

ÎÎÎ

3.0

ÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Small–Signal Current Gain

(IC = 1.0 Adc, VCE = 10 Vdc, ftest = 1.0 MHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

hfe

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

10

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

—

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Î

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Output Capacitance

(VCB = 10 Vdc, IE = 0, ftest = 100 kHz)

ÎÎÎÎÎ

Î

ÎÎÎ

Î

ÎÎÎÎÎ

Cob

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

100

ÎÎÎ

Î

ÎÎÎ

—

ÎÎÎÎ

Î

ÎÎ

Î

ÎÎÎÎ

325

ÎÎÎ

Î

ÎÎÎ

pF

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Resistive Load (Table 1)

ÎÎÎÎÎÎ

Delay Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎ

td

ÎÎÎÎ

—

ÎÎÎ

0.12

ÎÎÎÎ

0.2

ÎÎÎ

µs

ÎÎÎÎÎÎ

Rise Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(VCC = 250 Vdc, IC = 10 A,

IB1 = 400 mA VBE( ff) =50Vdc t =50µs

ÎÎÎÎÎ

tr

ÎÎÎÎ

—

ÎÎÎ

0.2

ÎÎÎÎ

0.6

ÎÎÎ

µs

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

IB1 = 400 mA, VBE(off) = 5.0 Vdc, tp = 50 µs,

Duty Cycle  2%).

ÎÎÎÎÎ

ts

ÎÎÎÎ

—

ÎÎÎ

0.6

ÎÎÎÎ

1.5

ÎÎÎ

µs

ÎÎÎÎÎÎ

Fall Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Duty

Cycle



2%).

ÎÎÎÎÎ

tf

ÎÎÎÎ

—

ÎÎÎ

0.15

ÎÎÎÎ

0.5

ÎÎÎ

µs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Inductive Load Clamped (Table 1)

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA,

ÎÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎ

1.0

ÎÎÎÎ

2.5

ÎÎÎ

µs

ÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC

10

A( k)

,

Vclam

Rated

VCEX

,

IB1

400

mA

,

VBE(off) = 5.0 Vdc, TC = 100C)

ÎÎÎÎÎ

tc

ÎÎÎÎ

—

ÎÎÎ

0.4

ÎÎÎÎ

1.5

ÎÎÎ

µs

ÎÎÎÎÎÎ

Storage Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC = 10 A(pk), Vclamp = Rated VCEX, IB1 = 400 mA,

ÎÎÎÎÎ

tsv

ÎÎÎÎ

—

ÎÎÎ

0.65

ÎÎÎÎ

—

ÎÎÎ

µs

ÎÎÎÎÎÎ

Crossover Time

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

(IC

10

A( k)

,

Vclam

Rated

VCEX

,

IB1

400

mA

,

VBE(off) = 5.0 Vdc, TC = 25C)

ÎÎÎÎÎ

tc

ÎÎÎÎ

—

ÎÎÎ

0.2

ÎÎÎÎ

—

ÎÎÎ

µs

(1) The internal Collector–to–Emitter diode can eliminate the need for an external diode to clamp inductive loads.

(1) Tests have shown that the Forward Recovery Voltage (Vf) of this diode is comparable to that of typical fast recovery rectifiers.

(2) Pulse Test: PW = 300 µs, Duty Cycle  2%.

MJ10005

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3

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

5

0.2 0.3 1 2 3

100

50

Figure 2. Collector Saturation Region

V, VOLTAGE (VOLTS)

3

IB, BASE CURRENT (AMP)

1

0.02 0.03 0.1 0.2 0.5 1 2

2.6

2.2

1.8

1.4

IC = 5 A

TJ = 25°C

10 A

VBE, BASEEMITTER VOLTAGE (VOLTS)

104

103

102

101

500

70

hFE, DC CURRENT GAIN

TJ = 150°C

VCE = 5 V

, COLLECTOR CURRENT ( A)IC

100

0 +0.2-0.2

VCE = 250 V

TJ = 125°C

100°C

25°C

30

20

10

7

0.5 0.7 5 7 20

Figure 3. Collector–Emitter Saturation Voltage

2.4

0.2

IC, COLLECTOR CURRENT (AMP)

0.4 0.3 0.5 0.7 1 2 5 20

2

1.6

1.2

0.8

IC/IB = 10

TJ = - 55°C

73

Figure 4. Base–Emitter Voltage

2.8

IC, COLLECTOR CURRENT (AMP)

0.80.2 0.3 0.5 0.7

2.4

2

1.6

1.2

Figure 5. Collector Cutoff Region

0.4

Figure 6. Output Capacitance

VR, REVERSE VOLTAGE (VOLTS)

50 1 2 20 60100.6

200

70

TJ = 25°C

Cob

1000

500

100

100 200 400

25°C

-55°C

200

300

10

15 A 20 A

0.05 0.70.30.07

V, VOLTAGE (VOLTS)

10

25°C

150°C

25 2073101

25°C

150°C

25°C

TJ = - 55°C

VBE(sat) @ IC/IB = 10

VBE(on) @ VCE = 3 V

75°C

µ

10-1

+0.4 +0.8+0.6 46 40

700

300

Cob, OUTPUT CAPACITANCE (pF)

REVERSE FORWARD

TYPICAL CHARACTERISTICS

MJ10005

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4

IC(pk)

t

t1tf

t

IC

VCE

TEST CIRCUITS CIRCUIT

VALUES INPUT

CONDITIONS

VCEO(sus) VCEX(sus) AND INDUCTIVE SWITCHING RESISTIVE SWITCHING

Lcoil = 10 mH, VCC = 10 V

Rcoil = 0.7 Ω

Vclamp = VCEO(sus)

Lcoil = 180 µH

Rcoil = 0.05 Ω

VCC = 20 V Vclamp = Rated VCEX Value VCC = 250 V

RL = 25 Ω

Pulse Width = 50 µs

t2

TIME

tf CLAMPED

VCE or

Vclamp

tf UNCLAMPED  t2

20 1

0

PW Varied to Attain

IC = 250 mA

2

INDUCTIVE TEST CIRCUIT

t1 Adjusted to

Obtain IC

Test Equipment

Scope — Tektronix

475 or Equivalent

RESISTIVE TEST CIRCUITOUTPUT WAVEFORMS

1

INPUT

2

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1 Ω

1N4937

OR

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

1

INPUT

2

Rcoil

Lcoil

VCC

Vclamp

RS =

0.1 Ω

1N4937

OR

EQUIVALENT

TUT

SEE ABOVE FOR

DETAILED CONDITIONS

1

2

TUT

RL

VCC

t1 ≈Lcoil (ICpk)

VCC

t2 ≈Lcoil (ICpk)

VClamp

Table 1. Test Conditions for Dynamic Performance

Figure 7. Inductive Switching Measurements

TIME

tsv trv tfi tti

90% Vclamp

tc

90% IB1

IB

10%

IC2%

IC

Vclamp

IC

Vclamp 10%

Vclamp

90% IC

SWITCHING TIMES NOTE

In resistive switching circuits, rise, fall, and storage times

have been defined and apply to both current and voltage

waveforms since they are in phase. However, for inductive

loads which are common to SWITCHMODE power

supplies and hammer drivers, current and voltage

waveforms are not in phase. Therefore, separate

measurements must be made on each waveform to

determine the total switching time. For this reason, the

following new terms have been defined.

tsv = Voltage Storage Time, 90% IB1 to 10% Vclamp

trv = Voltage Rise Time, 10–90% Vclamp

tfi = Current Fall Time, 90–10% IC

tti = Current Tail, 10–2% IC

tc = Crossover Time, 10% Vclamp to 10% IC

An enlarged portion of the turn–off waveforms is shown

in Figure 7 to aid in the visual identity of these terms.

For the designer, there is minimal switching loss during

storage time and the predominant switching power losses

occur during the crossover interval and can be obtained

using the standard equation from AN–222.

PSWT = l/2 VCC IC (tc) f

In general, trv + tfi  t c. However, at lower test currents

this relationship may not be valid.

As is common with most switching transistors, resistive

switching is specified a t 2 5C and has become a benchmark

for designers. However, for designers of high frequency

converter circuits, the user oriented specifications which

make this a “SWITCHMODE” transistor are the inductive

switching speeds (tc and tsv) which are guaranteed at 100C.

MJ10005

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5

3

Figure 8. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)µ

2

0.7

0.1 320

0.2

15

td

tr

27

1

0.3

0.5

Figure 9. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

t, TIME (s)µ

0.7

0.2

0.1

VBE(off) = 5 V

VCC = 250 V

IC/IB = 25

TJ = 25°C

tf

ts

0.3

0.5

VCC = 250 V

IC/IB = 25

TJ = 25°C

10 3 20152710

1

0.07

0.05

RESISTIVE SWITCHING PERFORMANCE

Figure 10. Thermal Response

t, TIME (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100 200 1.0 k500

ZθJC (t) = r(t) RθJC

RθJC = 1.0°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) ZθJC(t)

P(pk)

t1

t2

DUTY CYCLE, D = t1/t2

D = 0.5

0.2

0.05

0.02

0.01 SINGLE PULSE

0.1

r(t), TRANSIENT THERMAL RESISTANCE

(NORMALIZED)

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The Safe Operating Area figures shown in Figures 11 and 12

are specified ratings for these devices under the test

conditions shown.

50

4

Figure 11. Forward Bias Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

10

2

1

0.5

0.1

0.02

6102040

400

BONDING WIRE LIMITED

THERMALLY LIMITED

SECOND BREAKDOWN LIMITED

60

0.005

IC, COLLECTOR CURRENT (AMPS)

TC = 25°C

dc

0.2

100 200 350

100 µs

10 µs

20

0

Figure 12. Reverse Bias Switching

Safe Operating Area

VCE, COLLECTOR EMITTER VOLTAGE (VOLTS)

16

12

0500

4

IC, COLLECTOR CURRENT (AMP)

8

300 400100 200

VBE(off) = 5 V

TURN OFF LOAD LINE

BOUNDARY FOR MJ10005.

THE LOCUS FOR MJ10004

IS 50 V LESS

1 ms

5 ms

CURVES APPLY BELOW RATED VCEO

MJ10005

VBE(off) = 2 V

VBE(off) = 0 V

TJ  100°C

0.01

0.05

5

20

SAFE OPERATING AREA INFORMATION

FORWARD BIAS

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC – VCE

limits of the transistor that must be observed for reliable

operation, i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 11 is based on TC = 25C; TJ(pk) is

variable depending on power level. Second breakdown

pulse limits are valid for duty cycles to 10% but must be

derated when TC ≥ 25C. Second breakdown limitations do

not derate the same as thermal limitations. Allowable

current at the voltages shown on Figure 11 may be found at

any case temperature by using the appropriate curve on

Figure 13.

TJ(pk) may be calculated from the data in Figure 10. At

high case temperatures, thermal limitations will reduce the

power that can be handled to values less than the limitations

imposed by second breakdown.

REVERSE BIAS

For inductive loads, high voltage and high current must be

sustained simultaneously during turn–off, in most cases,

with the base to emitter junction reverse biased. Under these

conditions the collector voltage must be held to a safe level

at or below a specific value of collector current. This can be

accomplished b y several means such as active clamping, RC

snubbing, load line shaping, etc. The safe level for these

devices i s specified as VCEX(sus) at a given collector current

and represents a voltage–current condition that can be

sustained during reverse biased turn–off. This rating is

verified under clamped conditions so that the device is never

subjected to an avalanche mode. Figure 12 gives the

complete reverse bias safe operating area characteristics.

100

80

60

20

00 40 80 120 200

Figure 13. Power Derating

TC, CASE TEMPERATURE (°C)

POWER DERATING FACTOR (%)

THERMAL DERATING

SECOND BREAKDOWN

DERATING

160

40

MJ10005

http://onsemi.com

7

PACKAGE DIMENSIONS

CASE 1–07

ISSUE Z

TO–204 (TO–3)

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

3. ALL RULES AND NOTES ASSOCIATED WITH

REFERENCED TO-204AA OUTLINE SHALL APPLY.

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A1.550 REF 39.37 REF

B--- 1.050 --- 26.67

C0.250 0.335 6.35 8.51

D0.038 0.043 0.97 1.09

E0.055 0.070 1.40 1.77

G0.430 BSC 10.92 BSC

H0.215 BSC 5.46 BSC

K0.440 0.480 11.18 12.19

L0.665 BSC 16.89 BSC

N--- 0.830 --- 21.08

Q0.151 0.165 3.84 4.19

U1.187 BSC 30.15 BSC

V0.131 0.188 3.33 4.77

A

N

E

C

K

–T– SEATING

PLANE

2 PL

D

M

Q

M

0.13 (0.005) Y M

T

M

Y

M

0.13 (0.005) T

–Q–

–Y–

2

1

UL

GB

V

H

MJ10005

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