DISCRETE SEMICONDUCTORS DATA SHEET BTA216B series B Triacs high commutation Product specification October 1997 1;3 Semiconductors Product specification Triacs high commutation GENERAL DESCRIPTION Glass passivated high commutation triacs in a plastic envelope suitable for surface mounting, intended for use in circuits where high static and dynamic dV/dt and high dI/dt can occur. These devices will commutate the full rated rms current at the maximum rated junction temperature, without the aid of a snubber. PINNING - SOT404 PIN BTA216B series B QUICK REFERENCE DATA SYMBOL PARAMETER MAX. MAX. MAX. UNIT BTA216BRepetitive peak off-state voltages RMS on-state current Non-repetitive peak on-state current VDRM IT(RMS) ITSM PIN CONFIGURATION 500B 500 600B 600 800B 800 V 16 140 16 140 16 140 A A SYMBOL DESCRIPTION mb 1 main terminal 1 2 main terminal 2 3 gate mb T2 T1 2 main terminal 2 1 G 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL PARAMETER VDRM Repetitive peak off-state voltages IT(RMS) RMS on-state current ITSM Non-repetitive peak on-state current I2t dIT/dt IGM VGM PGM PG(AV) Tstg Tj I2t for fusing Repetitive rate of rise of on-state current after triggering Peak gate current Peak gate voltage Peak gate power Average gate power CONDITIONS MIN. - full sine wave; Tmb 99 C full sine wave; Tj = 25 C prior to surge t = 20 ms t = 16.7 ms t = 10 ms ITM = 20 A; IG = 0.2 A; dIG/dt = 0.2 A/s over any 20 ms period Storage temperature Operating junction temperature MAX. -500 5001 -600 6001 UNIT -800 800 V - 16 A - 140 150 98 100 A A A2s A/s - 2 5 5 0.5 A V W W -40 - 150 125 C C 1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may switch to the on-state. The rate of rise of current should not exceed 15 A/s. October 1997 1 Rev 1.100 1;3 Semiconductors Product specification Triacs high commutation BTA216B series B THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Thermal resistance full cycle junction to mounting base half cycle Thermal resistance minimum footprint, FR4 board junction to ambient Rth j-a CONDITIONS MIN. TYP. MAX. UNIT - 55 1.2 1.7 - K/W K/W K/W MIN. TYP. MAX. UNIT T2+ G+ T2+ GT2- G- 2 2 2 18 21 34 50 50 50 mA mA mA T2+ G+ T2+ GT2- G- VD = 12 V; IGT = 0.1 A IT = 20 A VD = 12 V; IT = 0.1 A VD = 400 V; IT = 0.1 A; Tj = 125 C VD = VDRM(max); Tj = 125 C 0.25 - 31 34 30 31 1.2 0.7 0.4 0.1 60 90 60 60 1.5 1.5 0.5 mA mA mA mA V V V mA STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS IGT Gate trigger current2 VD = 12 V; IT = 0.1 A IL Latching current IH VT VGT Holding current On-state voltage Gate trigger voltage ID Off-state leakage current VD = 12 V; IGT = 0.1 A DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT dVD/dt Critical rate of rise of off-state voltage Critical rate of change of commutating current Gate controlled turn-on time VDM = 67% VDRM(max); Tj = 125 C; exponential waveform; gate open circuit VDM = 400 V; Tj = 125 C; IT(RMS) = 16 A; without snubber; gate open circuit ITM = 20 A; VD = VDRM(max); IG = 0.1 A; dIG/dt = 5 A/s 1000 4000 - V/s - 28 - A/ms - 2 - s dIcom/dt tgt 2 Device does not trigger in the T2-, G+ quadrant. October 1997 2 Rev 1.100 1;3 Semiconductors Product specification Triacs high commutation 25 BTA216B series B BT139 Ptot / W Tmb(max) / C 20 95 IT(RMS) / A BT139 = 180 20 99 C 101 120 1 15 90 15 107 60 10 30 10 113 5 119 5 0 0 5 10 IT(RMS) / A 125 20 15 0 -50 Fig.1. Maximum on-state dissipation, Ptot, versus rms on-state current, IT(RMS), where = conduction angle. 1000 50 Tmb / C 100 150 Fig.4. Maximum permissible rms current IT(RMS) , versus mounting base temperature Tmb. BTA216 ITSM / A 0 50 BT139 IT(RMS) / A 40 dI T /dt limit 30 100 20 I TSM IT T 10 time Tj initial = 25 C max 10 10us 100us 1ms T/s 10ms 0 0.01 100ms Fig.2. Maximum permissible non-repetitive peak on-state current ITSM, versus pulse width tp, for sinusoidal currents, tp 20ms. 150 ITSM / A 100 1.6 ITSM T 10 Fig.5. Maximum permissible repetitive rms on-state current IT(RMS), versus surge duration, for sinusoidal currents, f = 50 Hz; Tmb 99C. BT139 IT 0.1 1 surge duration / s VGT(Tj) VGT(25 C) BT136 1.4 time Tj initial = 25 C max 1.2 1 50 0.8 0.6 0 1 10 100 Number of cycles at 50Hz 0.4 -50 1000 Fig.3. Maximum permissible non-repetitive peak on-state current ITSM, versus number of cycles, for sinusoidal currents, f = 50 Hz. October 1997 0 50 Tj / C 100 150 Fig.6. Normalised gate trigger voltage VGT(Tj)/ VGT(25C), versus junction temperature Tj. 3 Rev 1.100 1;3 Semiconductors Product specification Triacs high commutation 3 IGT(Tj) IGT(25 C) BTA216B series B 50 BTA216 T2+ G+ T2+ GT2- G- 2.5 Tj = 125 C Tj = 25 C typ 40 2 BT139 IT / A max Vo = 1.195 V Rs = 0.018 Ohms 30 1.5 20 1 10 0.5 0 0 -50 0 50 Tj / C 100 150 Fig.7. Normalised gate trigger current IGT(Tj)/ IGT(25C), versus junction temperature Tj. 3 IL(Tj) IL(25 C) 0 0.5 1 1.5 VT / V 2 2.5 3 Fig.10. Typical and maximum on-state characteristic. 10 TRIAC 2.5 BT139 Zth j-mb (K/W) 1 unidirectional bidirectional 2 0.1 1.5 P D 1 tp 0.01 0.5 t 0 -50 0 50 Tj / C 100 0.001 10us 150 IH(Tj) IH(25C) 1ms 10ms tp / s 0.1s 1s 10s Fig.11. Transient thermal impedance Zth j-mb, versus pulse width tp. Fig.8. Normalised latching current IL(Tj)/ IL(25C), versus junction temperature Tj. 3 0.1ms 1000 TRIAC dIcom/dt (A/ms) BTA216 2.5 100 2 1.5 10 1 0.5 0 -50 0 50 Tj / C 100 1 20 150 60 80 Tj / C 100 120 140 Fig.12. Typical, critical rate of change of commutating current dIcom/dt versus junction temperature. Fig.9. Normalised holding current IH(Tj)/ IH(25C), versus junction temperature Tj. October 1997 40 4 Rev 1.100 1;3 Semiconductors Product specification Triacs high commutation BTA216B series B MECHANICAL DATA Dimensions in mm 4.5 max 1.4 max 10.3 max Net Mass: 1.4 g 11 max 15.4 2.5 0.85 max (x2) 0.5 2.54 (x2) Fig.13. SOT404 : centre pin connected to mounting base. Notes 1. Epoxy meets UL94 V0 at 1/8". MOUNTING INSTRUCTIONS Dimensions in mm 11.5 9.0 17.5 2.0 3.8 5.08 Fig.14. SOT404 : minimum pad sizes for surface mounting. Notes 1. Plastic meets UL94 V0 at 1/8". October 1997 5 Rev 1.100 NXP Semiconductors Legal information DATA SHEET STATUS DOCUMENT STATUS(1) PRODUCT STATUS(2) DEFINITION Objective data sheet Development This document contains data from the objective specification for product development. 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