MAXIMUM RATINGS: (TA=25°C) SYMBOL 2N5193 2N5194 2N5195 UNITS
Collector-Base Voltage VCBO 40 60 80 V
Collector-Emitter Voltage VCEO 40 60 80 V
Emitter-Base Voltage VEBO 5.0 V
Continuous Collector Current IC4.0 A
Base Current IB1.0 A
Power Dissipation (TC=25°C) PD40 W
Operating and Storage Junction Temperature TJ, Tstg -65 to +150 °C
Thermal Resistance (Junction to Case) ΘJC 3.12 °C/W
ELECTRICAL CHARACTERISTICS: (TC=25°C)
SYMBOL TEST CONDITIONS MIN MAX UNITS
ICBO VCB=Rated VCBO 100 μA
ICEX VCE=Rated VCEO, VEB=1.5V 100 μA
ICEO VCE=Rated VCEO 1.0 mA
IEBO VEB=5.0V 1.0 mA
BVCEO IC=100mA (2N5193) 40 V
BVCEO IC=100mA (2N5194) 60 V
BVCEO IC=100mA (2N5195) 80 V
VCE(SAT) IC=1.5A, IB=150mA 0.6 V
VCE(SAT) IC=4.0A, IB=1.0A 1.4 V
VBE(ON) VCE=2.0V, IC=1.5A 1.2 V
hFE VCE=2.0V, IC=1.5A (2N5193, 2N5194) 25 100
hFE VCE=2.0V, IC=1.5A (2N5195) 20 80
hFE VCE=2.0V, IC=4.0A (2N5193, 2N5194) 10
hFE VCE=2.0V, IC=4.0A (2N5195) 7.0
fTVCE=10V, IC=1.0A, f=1.0MHz 2.0 MHz
2N5193
2N5194
2N5195
PNP SILICON
POWER TRANSISTORS
TO-126 CASE
Central
Semiconductor Corp.
TM
R1 (10-February 2009)
DESCRIPTION:
The CENTRAL SEMICONDUCTOR 2N5193 Series
types are Silicon PNP Power Transistors, manufactured
by the epitaxial base process, designed for medium
power amplifier and switching applications.
These devices are complementary to the NPN 2N5190
Series types.
MARKING: FULL PART NUMBER
Central
Semiconductor Corp.
TM
2N5193
2N5194
2N5195
PNP SILICON
POWER TRANSISTORS
R1 (10-February 2009)
TO-126 CASE - MECHANICAL OUTLINE
LEAD CODE:
1) EMITTER
2) COLLECTOR
3) BASE
MARKING:
FULL PART NUMBER
