2N5194 - Mospec Semiconductor

Motorola Bipolar Power Transistor Device Data

   

. . . for use in power amplifier and switching circuits, — excellent safe area limits.

Complement to NPN 2N5191, 2N5192

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎÎ

Symbol

ÎÎÎÎ

2N5194

ÎÎÎÎ

2N5195

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎÎ

VCEO

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector–Base Voltage

ÎÎÎÎÎ

VCB

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎÎ

VEB

ÎÎÎÎÎÎÎ

5.0

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎ

Collector Current

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

4.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Base Current

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

1.0

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation @ TC = 25

Derate above 25

ÎÎÎÎÎ

ÎÎÎÎÎÎÎ

320

ÎÎÎ

Watts

mW/

ÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎÎ

–65 to +150

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎÎ

θJC

ÎÎÎÎÎÎ

3.12

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎÎ

Symbol

ÎÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage (1)

(IC = 0.1 Adc, IB = 0) 2N5194

2N5195

ÎÎÎÎÎ

VCEO(sus)

ÎÎÎÎÎ

ÎÎÎÎ

—

ÎÎÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, IB = 0) 2N5194

(VCE = 80 Vdc, IB = 0) 2N5195

ÎÎÎÎÎ

ICEO

ÎÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc) 2N5194

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc) 2N5195

(VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125

C) 2N5194

(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125

C) 2N5195

ÎÎÎÎÎ

ICEX

ÎÎÎÎÎ

—

ÎÎÎÎ

0.1

2.0

ÎÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCB = 60 Vdc, IE = 0) 2N5194

(VCB = 80 Vdc, IE = 0) 2N5195

ÎÎÎÎÎ

ICBO

ÎÎÎÎÎ

—

ÎÎÎÎ

0.1

ÎÎÎÎÎ

mAdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VBE = 5.0 Vdc, IC = 0)

ÎÎÎÎÎ

IEBO

ÎÎÎÎÎ

—

ÎÎÎÎ

1.0

ÎÎÎÎÎ

mAdc

(continued)

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by 2N5194/D

 Motorola, Inc. 1995





*Motorola Preferred Device

4 AMPERE

POWER TRANSISTORS

SILICON PNP

60–80 VOLTS



CASE 77–08

TO–225AA TYPE

REV 7

 

2Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

*ELECTRICAL CHARACTERISTICS — continued (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain (1)

(IC = 1.5 Adc, VCE = 2.0 Vdc) 2N5194

2N5195

(IC = 4.0 Adc, VCE = 2.0 Vdc) 2N5194

2N5195

ÎÎÎÎ

hFE

ÎÎÎÎ

7.0

ÎÎÎÎ

100

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage (1)

(IC = 1.5 Adc, IB = 0.15 Adc)

(IC = 4.0 Adc, IB = 1.0 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

0.6

1.4

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter On Voltage (1)

(IC = 1.5 Adc, VCE = 2.0 Vdc)

ÎÎÎÎ

VBE(on)

ÎÎÎÎ

—

ÎÎÎÎ

1.2

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Current–Gain — Bandwidth Product

(IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz)

ÎÎÎÎ

2.0

ÎÎÎÎ

—

ÎÎÎ

MHz

*Indicates JEDEC Registered Data.

(1) Pulse Test: Pulse Width

300 µs, Duty Cycle

2.0%.

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

Figure 1. DC Current Gain

IC, COLLECTOR CURRENT (AMP)

0.1

0.004

7.0

5.0

1.0

0.7

0.5

0.3

0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 4.0

VCE = 2.0 V

VCE = 10 V

Figure 2. Collector Saturation Region

IB, BASE CURRENT (mA)

2.0

0.05

1.6

1.2

0.8

0.4

0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 10 500

IC = 10 mA

2.0 3.0

TJ = 150

–55

3.0

2.0

0.2

hFE, DC CURRENT GAIN (NORMALIZED)

5.0 7.0 20 30 50 70 100 200 300

100 mA 1.0 A 3.0 A

TJ = 25

 

Motorola Bipolar Power Transistor Device Data

RBE, EXTERNAL BASE–EMITTER RESISTANCE (OHMS)

2.0

0.005

IC, COLLECTOR CURRENT (AMP)

0.01 0.02 0.03 0.05 0.2 0.3 1.0 2.0 4.0

1.6

1.2

0.8

0.4

TJ = 25

VBE(sat) @ IC/IB = 10

VCE(sat) @ IC/IB = 10

VOLTAGE (VOLTS)

Figure 3. “On” Voltage

0.1 0.5 3.0

VBE @ VCE = 2.0 V

+2.5

Figure 4. Temperature Coefficients

IC, COLLECTOR CURRENT (AMP)

*APPLIES FOR IC/IB

≤

hFE @ VCE

TJ = –65

C to +150

V, TEMPERATURE COEFFICIENTS (mV/ C)

°θ

+2.0

+1.5

+0.5

–0.5

–1.0

–1.5

–2.0

–2.5

VB for VBE

VC for VCE(sat)

+1.0

0.005 0.01 0.020.03 0.05 0.2 0.3 1.0 2.0 4.00.1 0.5 3.0

103

+0.4

Figure 5. Collector Cut–Off Region

VBE, BASE–EMITTER VOLTAGE (VOLTS)

102

101

100

10–1

, COLLECTOR CURRENT ( A)

10–2

10–3 +0.3 +0.2 +0.1 0 –0.1 –0.2 –0.3 –0.4 –0.5 –0.6

VCE = 30 Vdc

TJ = 150

100

REVERSE FORWARD

ICES

107

Figure 6. Effects of Base–Emitter Resistance

TJ, JUNCTION TEMPERATURE (

40 60 80 100 120 140 160

106

105

104

103

102

VCE = 30 V

IC = 10 x ICES

IC = 2 x ICES IC

≈

ICES

(TYPICAL ICES VALUES

OBTAINED FROM FIGURE 5)

Figure 7. Switching Time Equivalent Test Circuit

APPROX

–11 V

TURN–ON PULSE

Vin

VBE(off)

TURN–OFF PULSE

Vin

APPROX

–11 V

VCC

SCOPE

Cjd << Ceb

+4.0 V

≤

7.0 ns

100 < t2 < 500

t3 < 15 ns

DUTY CYCLE

≈

2.0%

Vin

RB AND RC VARIED

TO OBTAIN DESIRED

CURRENT LEVELS

500

0.1

VR, REVERSE VOLTAGE (VOLTS)

0.2 0.3 0.5 1.0 3.0 5.0 20 40

300

200

100

TJ = 25

CAPACITANCE (pF)

Figure 8. Capacitance

2.0 10 30

Ceb

Ccb

APPROX

+9.0 V

 

4Motorola Bipolar Power Transistor Device Data

2.0

0.05

Figure 9. Turn–On Time

IC, COLLECTOR CURRENT (AMP)

1.0

0.7

0.5

0.3

0.2

0.1

0.02 0.07 0.1 0.2 0.3 1.0 2.0 4.0

tr @ VCC = 30 V

IC/IB = 10

TJ = 25

0.03

t, TIME ( s)

0.5

0.05

0.07

0.7 3.0

tr @ VCC = 10 V

td @ VBE(off) = 2.0 V

2.0

0.05

Figure 10. Turn–Off Time

IC, COLLECTOR CURRENT (AMP)

1.0

0.7

0.5

0.3

0.2

0.1

0.02 0.07 0.1 0.2 0.3 1.0 2.0 4.0

tf @ VCC = 30 V

IB1 = IB2

IC/IB = 10

′

= ts – 1/8 tf

TJ = 25

0.03

t, TIME ( s)

0.5

0.05

0.07

0.7 3.0

tf @ VCC = 10 V

′

1.0

Figure 11. Rating and Thermal Data

Active–Region Safe Operating Area

VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

5.0

2.0

1.0

0.5

0.1 2.0 5.0 10 20 50 100

SECONDARY BREAKDOWN LIMIT

THERMAL LIMIT @ TC = 25

BONDING WIRE LIMIT

0.2

IC, COLLECTOR CURRENT (AMP)

CURVES APPLY BELOW RATED VCEO

TJ = 150

2N5194

5.0 ms 1.0 ms

100

2N5195

Note 1:

There are two limitations on the power handling ability of a

transistor; average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 11 is based on T J(pk) = 150

C. TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. At high–case temperatures, thermal limitations

will reduce the power that can be handled to values less than

the limitations imposed by second breakdown.

Figure 12. Thermal Response

t, TIME OR PULSE WIDTH (ms)

1.0

0.01

0.7

0.5

0.3

0.2

0.1

0.07

0.05

0.03

0.02

0.02 0.03

r(t), EFFECTIVE TRANSIENT

THERMAL RESISTANCE (NORMALIZED)

0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 50 100 200 300 1000500

JC(max) = 3.12

C/W

D = 0.5

0.2

0.05

0.02

0.01

SINGLE PULSE

0.1

 

Motorola Bipolar Power Transistor Device Data

DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA

PPPP

1/f

DUTY CYCLE, D = t1 f = t1

PEAK PULSE POWER = PP

Figure A

A train of periodical power pulses can be represented by the

model shown in Figure A. Using the model and the device

thermal response, the normalized effective transient thermal

resistance of Figure 12 was calculated for various duty

cycles.

To find θJC(t), multiply the value obtained from Figure 12 by

the steady state value θJC.

Example:

The 2N5193 is dissipating 50 watts under the following

conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2).

Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the

reading of r(t1, D) is 0.27.

The peak rise in junction temperature is therefore:

∆T = r(t) x PP x θJC = 0.27 x 50 x 3.12 = 42.2

 

6Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 77–08

TO–225AA TYPE

ISSUE V

STYLE 1:

PIN 1. EMITTER

2. COLLECTOR

3. BASE

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

–B–

–A– M

1 32

2 PL

0.25 (0.010) B M

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.425 0.435 10.80 11.04

B0.295 0.305 7.50 7.74

C0.095 0.105 2.42 2.66

D0.020 0.026 0.51 0.66

F0.115 0.130 2.93 3.30

G0.094 BSC 2.39 BSC

H0.050 0.095 1.27 2.41

J0.015 0.025 0.39 0.63

K0.575 0.655 14.61 16.63

M5 TYP 5 TYP

Q0.148 0.158 3.76 4.01

R0.045 0.055 1.15 1.39

S0.025 0.035 0.64 0.88

U0.145 0.155 3.69 3.93

V0.040 ––– 1.02 –––

_ _

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2N5194/D

*2N5194/D*

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