Order this document by 2N5194/D SEMICONDUCTOR TECHNICAL DATA IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIII IIIIII III IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII IIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIII IIIII IIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII *Motorola Preferred Device . . . for use in power amplifier and switching circuits, -- excellent safe area limits. Complement to NPN 2N5191, 2N5192 4 AMPERE POWER TRANSISTORS SILICON PNP 60 - 80 VOLTS *MAXIMUM RATINGS Rating Symbol 2N5194 2N5195 Unit VCEO 60 80 Vdc Collector-Base Voltage VCB 60 80 Vdc Emitter-Base Voltage VEB 5.0 Vdc Collector Current IC 4.0 Adc Base Current IB 1.0 Adc Total Power Dissipation @ TC = 25_C Derate above 25_C PD 40 320 Watts mW/_C TJ, Tstg - 65 to + 150 _C/W Collector-Emitter Voltage Operating and Storage Junction Temperature Range THERMAL CHARACTERISTICS Characteristic Symbol Max Unit JC 3.12 _C/W Thermal Resistance, Junction to Case CASE 77-08 TO-225AA TYPE *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 60 80 -- -- -- -- 1.0 1.0 -- -- -- -- 0.1 0.1 2.0 2.0 -- -- 0.1 0.1 -- 1.0 Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (1) (IC = 0.1 Adc, IB = 0) VCEO(sus) 2N5194 2N5195 Collector Cutoff Current (VCE = 60 Vdc, IB = 0) (VCE = 80 Vdc, IB = 0) 2N5194 2N5195 Collector Cutoff Current (VCE = 60 Vdc, VBE(off) = 1.5 Vdc) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc) (VCE = 60 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) (VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 125_C) 2N5194 2N5195 2N5194 2N5195 Collector Cutoff Current (VCB = 60 Vdc, IE = 0) (VCB = 80 Vdc, IE = 0) 2N5194 2N5195 Vdc ICEO mAdc ICEX mAdc ICBO Emitter Cutoff Current (VBE = 5.0 Vdc, IC = 0) IEBO mAdc mAdc (continued) Preferred devices are Motorola recommended choices for future use and best overall value. REV 7 Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIII IIII IIII III IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII v v *ELECTRICAL CHARACTERISTICS -- continued (TC = 25_C unless otherwise noted) Characteristic Symbol Min Max 25 20 10 7.0 100 80 -- -- -- -- 0.6 1.4 Unit ON CHARACTERISTICS DC Current Gain (1) (IC = 1.5 Adc, VCE = 2.0 Vdc) hFE -- 2N5194 2N5195 2N5194 2N5195 (IC = 4.0 Adc, VCE = 2.0 Vdc) Collector-Emitter Saturation Voltage (1) (IC = 1.5 Adc, IB = 0.15 Adc) (IC = 4.0 Adc, IB = 1.0 Adc) VCE(sat) Vdc Base-Emitter On Voltage (1) (IC = 1.5 Adc, VCE = 2.0 Vdc) VBE(on) -- 1.2 Vdc fT 2.0 -- MHz DYNAMIC CHARACTERISTICS Current-Gain -- Bandwidth Product (IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz) hFE , DC CURRENT GAIN (NORMALIZED) * Indicates JEDEC Registered Data. (1) Pulse Test: Pulse Width 300 s, Duty Cycle 10 7.0 5.0 2.0%. TJ = 150C VCE = 2.0 V VCE = 10 V 3.0 2.0 1.0 0.7 0.5 25C - 55C 0.3 0.2 0.1 0.004 0.007 0.01 0.02 0.03 0.05 0.1 0.2 0.3 IC, COLLECTOR CURRENT (AMP) 0.5 1.0 2.0 3.0 4.0 VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 1. DC Current Gain 2.0 1.6 1.2 IC = 10 mA 100 mA 1.0 A 3.0 A 0.8 TJ = 25C 0.4 0 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 IB, BASE CURRENT (mA) 20 30 50 70 100 200 300 500 Figure 2. Collector Saturation Region 2 Motorola Bipolar Power Transistor Device Data 2.0 TJ = 25C 1.2 VBE(sat) @ IC/IB = 10 VBE @ VCE = 2.0 V 0.4 VCE(sat) @ IC/IB = 10 0 0.005 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 IC, COLLECTOR CURRENT ( A) TJ = 150C 101 100C REVERSE 10- 3 + 0.4 + 0.3 + 0.2 + 0.1 + 0.5 *VC for VCE(sat) 0 - 0.5 - 1.0 VB for VBE - 1.5 - 2.0 - 2.5 0.005 0.01 0.020.03 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 4.0 ICES 0 - 0.1 - 0.2 - 0.3 - 0.4 - 0.5 - 0.6 107 VCE = 30 V 106 IC = 10 x ICES 105 IC = 2 x ICES IC ICES 104 (TYPICAL ICES VALUES OBTAINED FROM FIGURE 5) 103 102 20 40 60 80 100 120 140 160 VBE, BASE-EMITTER VOLTAGE (VOLTS) TJ, JUNCTION TEMPERATURE (C) Figure 5. Collector Cut-Off Region Figure 6. Effects of Base-Emitter Resistance TURN-ON PULSE VBE(off) Vin 0 VCC RC 500 TJ = 25C Vin t1 t2 Vin APPROX -11 V FORWARD 25C APPROX -11 V + 1.0 Figure 4. Temperature Coefficients 102 10- 2 + 1.5 Figure 3. "On" Voltage VCE = 30 Vdc 10-1 *APPLIES FOR IC/IB hFE @ VCE TJ = - 65C to +150C + 2.0 IC, COLLECTOR CURRENT (AMP) 103 100 + 2.5 IC, COLLECTOR CURRENT (AMP) RBE , EXTERNAL BASE-EMITTER RESISTANCE (OHMS) 0.8 t3 TURN-OFF PULSE RB SCOPE Cjd << Ceb APPROX + 9.0 V + 4.0 V RB AND RC VARIED TO OBTAIN DESIRED CURRENT LEVELS t1 7.0 ns 100 < t2 < 500 s t3 < 15 ns DUTY CYCLE 2.0% Figure 7. Switching Time Equivalent Test Circuit Motorola Bipolar Power Transistor Device Data 300 CAPACITANCE (pF) VOLTAGE (VOLTS) 1.6 V, TEMPERATURE COEFFICIENTS (mV/C) 200 Ceb 100 Ccb 70 50 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 20 30 40 VR, REVERSE VOLTAGE (VOLTS) Figure 8. Capacitance 3 2.0 2.0 IC/IB = 10 TJ = 25C 1.0 0.7 0.5 tr @ VCC = 30 V t, TIME ( s) t, TIME ( s) 0.7 0.5 0.3 0.2 tr @ VCC = 10 V 0.1 0.07 0.05 tf @ VCC = 30 V 0.3 0.2 tf @ VCC = 10 V 0.1 0.07 0.05 td @ VBE(off) = 2.0 V 0.03 0.02 0.2 0.3 0.05 0.07 0.1 0.5 0.7 1.0 IC, COLLECTOR CURRENT (AMP) 2.0 0.03 0.02 0.05 0.07 0.1 3.0 4.0 Figure 9. Turn-On Time IC, COLLECTOR CURRENT (AMP) 100 s TJ = 150C 2.0 dc 1.0 SECONDARY BREAKDOWN LIMIT THERMAL LIMIT @ TC = 25C BONDING WIRE LIMIT CURVES APPLY BELOW RATED VCEO 0.5 0.2 3.0 4.0 v 2N5194 0.1 1.0 2.0 Note 1: There are two limitations on the power handling ability of a transistor; average junction temperature and second breakdown. Safe operating area curves indicate I C - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 11 is based on T J(pk) = 150_C. T C is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided T J(pk) 150 _C. At high-case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 1.0 ms 5.0 ms 0.5 0.7 1.0 0.2 0.3 IC, COLLECTOR CURRENT (AMP) Figure 10. Turn-Off Time 10 5.0 IB1 = IB2 IC/IB = 10 ts = ts - 1/8 tf TJ = 25C ts 1.0 2N5195 2.0 5.0 10 20 50 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 100 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) Figure 11. Rating and Thermal Data Active-Region Safe Operating Area 1.0 0.7 0.5 D = 0.5 0.3 JC(max) = 3.12C/W 0.2 0.2 0.1 0.1 0.07 0.05 0.03 0.02 0.01 0.01 0.05 0.02 SINGLE PULSE 0.02 0.03 0.01 0.05 0.1 0.2 0.3 0.5 1.0 2.0 3.0 5.0 10 t, TIME OR PULSE WIDTH (ms) 20 30 50 100 200 300 500 Figure 12. Thermal Response 4 Motorola Bipolar Power Transistor Device Data 1000 DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA tP PP PP A train of periodical power pulses can be represented by the model shown in Figure A. Using the model and the device thermal response, the normalized effective transient thermal resistance of Figure 12 was calculated for various duty cycles. To find JC(t), multiply the value obtained from Figure 12 by the steady state value JC. t1 1/f t1 tP PEAK PULSE POWER = PP DUTY CYCLE, D = t1 f = Figure A Motorola Bipolar Power Transistor Device Data Example: The 2N5193 is dissipating 50 watts under the following conditions: t1 = 0.1 ms, tp = 0.5 ms. (D = 0.2). Using Figure 12, at a pulse width of 0.1 ms and D = 0.2, the reading of r(t1, D) is 0.27. The peak rise in junction temperature is therefore: T = r(t) x PP x JC = 0.27 x 50 x 3.12 = 42.2_C 5 PACKAGE DIMENSIONS -B- U F Q -A- NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C M DIM A B C D F G H J K M Q R S U V 1 2 3 H K J V G S R 0.25 (0.010) A M M B M D 2 PL 0.25 (0.010) M A M B M INCHES MIN MAX 0.425 0.435 0.295 0.305 0.095 0.105 0.020 0.026 0.115 0.130 0.094 BSC 0.050 0.095 0.015 0.025 0.575 0.655 5 _ TYP 0.148 0.158 0.045 0.055 0.025 0.035 0.145 0.155 0.040 --- MILLIMETERS MIN MAX 10.80 11.04 7.50 7.74 2.42 2.66 0.51 0.66 2.93 3.30 2.39 BSC 1.27 2.41 0.39 0.63 14.61 16.63 5 _ TYP 3.76 4.01 1.15 1.39 0.64 0.88 3.69 3.93 1.02 --- STYLE 1: PIN 1. EMITTER 2. COLLECTOR 3. BASE CASE 77-08 TO-225AA TYPE ISSUE V Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. 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Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 6 Motorola Bipolar Power Transistor Device Data *2N5194/D* 2N5194/D