© Semiconductor Components Industries, LLC, 2013
November, 2013 − Rev. 3 1Publication Order Number:
2N2907A/D
2N2907A
Small Signal Switching
Transistor
PNP Silicon
Features
•MIL−PRF−19500/291 Qualified
•Available as JAN, JANTX, and JANTXV
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO −60 Vdc
Collector−Base Voltage VCBO −60 Vdc
Emitter−Base Voltage VEBO −5.0 Vdc
Collector Current − Continuous IC−600 mAdc
Total Device Dissipation @ TA = 25°C PT500 mW
Total Device Dissipation @ TC = 25°C PT1.0 W
Operating and Storage Junction
Temperature Range TJ, Tstg −65 to +200 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient RqJA 325 °C/W
Thermal Resistance, Junction−to−Case RqJC 150 °C/W
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be af fected.
COLLECTOR
3
2
BASE
1
EMITTER
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TO−18
CASE 206AA
STYLE 1
Device Package Shipping
ORDERING INFORMATION
JAN2N2907A
JANTX2N2907A TO−18 Bulk
JANTXV2N2907A
2N2907A
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2
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)
Characteristic Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage
(IC = −10 mAdc) V(BR)CEO −60 −Vdc
Collector−Emitter Cutoff Current
(VCE = −50 Vdc) ICES −−50 nAdc
Collector−Base Cutoff Current
(VCB = −50 Vdc, IE = 0)
(VCB = −60 Vdc, IE = 0)
ICBO −
−−10
−10 nAdc
mAdc
Emitter−Base Cutoff Current
(VEB = −4.0 Vdc)
(VEB = −5.0 Vdc)
IEBO −
−−50
−10 nAdc
mAdc
ON CHARACTERISTICS (Note 1)
DC Current Gain
(IC = −0.1 mAdc, VCE = −10 Vdc)
(IC = −1.0 mAdc, VCE = −10 Vdc)
(IC = −10 mAdc, VCE = −10 Vdc)
(IC = −150 mAdc, VCE = −10 Vdc)
(IC = −500 mAdc, VCE = −10 Vdc)
hFE 75
100
100
100
50
−
450
−
300
−
−
Collector−Emitter Saturation Voltage
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VCE(sat) −
−−0.4
−1.6
Vdc
Base−Emitter Saturation Voltage
(IC = −150 mAdc, IB = −15 mAdc)
(IC = −500 mAdc, IB = −50 mAdc)
VBE(sat) −0.6
−−1.3
−2.6
Vdc
SMALL−SIGNAL CHARACTERISTICS
Magnitude of Small−Signal Current Gain
(IC = −20 mAdc, VCE = −20 Vdc, f = 100 MHz) |hfe|2.0 − −
Small−Signal Current Gain
(IC = −1.0 mAdc, VCE = −10 Vdc, f = 1 kHz) hfe 100 − −
Output Capacitance
(VCB = −10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cobo − 8.0 pF
Input Capacitance
(VEB = −2.0 Vdc, IC = 0, 100 kHz ≤ f ≤ 1.0 MHz) Cibo − 30 pF
SWITCHING CHARACTERISTICS
T urn−On Time
(Reference Figure in MIL−PRF−19500/291) ton − 45 ns
T urn−Off Time
(Reference Figure in MIL−PRF−19500/291) toff − 300 ns
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
1. Pulse Test: Pulse Width = 300 ms, Duty Cycle ≤ 2.0%.
2N2907A
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3
IC, COLLECTOR CURRENT (mA)
hFE, DC CURRENT GAIN
400
0.1 1 10 100
Figure 1. DC Current Gain
350
300
250
200
150
100
50
0
150°C
−55°C
25°C
VCE = 10 V
IC, COLLECTOR CURRENT (mA)
VBESAT, BASE−EMITTER
SATURATION VOLTAGE (V)
1.2
0.1 1 10 100
Figure 2. Base−Emitter Saturation Voltage
−55°C
25°C
150°C
IC/IB = 0
1.0
0.8
0.6
0.4
0.2
0
IC, COLLECTOR CURRENT (mA)
VCESAT, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
0.5
0.1 1 10 100
Figure 3. Collector−Emitter Saturation Voltage
−55°C
25°C
150°C
IC, COLLECTOR CURRENT (mA)
VBEON, BASE−EMITTER VOLTAGE
(V)
1.1
0.1 1 10 100
Figure 4. Base−Emitter Voltage
VCE = 1 V
IC/IB = 0
−55°C
25°C
150°C
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
IB, BASE CURRENT (mA)
VCESAT, COLLECTOR−EMITTER
SATURATION VOLTAGE (V)
1.0
0.01 0.10 1 10
Figure 5. Collector Saturation Region
IC = 10 mA
100 mA
300 mA
500 mA
VBE, BASE−EMITTER (V)
CIBO, INPUT CAPACITANCE (pF)
40
−5 −4 −3 0
Figure 6. Input Capacitance
TJ = 25°C
fTEST = 10 kHz
−2
450
0
0.1
0.01
35
30
25
20
15
10
5
0−1
0.4
0.3
0.2
0.1
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VBC, BASE−COLLECTOR VOLTAGE (V)
COBO, OUTPUT CAPACITANCE (pF)
25
−20 −18 −10 0
Figure 7. Output Capacitance
20
15
10
5
0−16 −14 −12 −8 −6 −4 −2
TJ = 25°C
fTEST = 10 kHz
IC, COLLECTOR CURRENT (mA)
ft, CURRENT GAIN BANDWIDTH (MHz)
400
1 10 100
Figure 8. Current Gain Bandwidth Product
350
300
250
200
150
100
50
0
TJ = 25°C
VCE = −5 V
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5
PACKAGE DIMENSIONS
TO−18 3
CASE 206AA
ISSUE A
STYLE 1:
PIN 1. EMITTER
2. BASE
3. COLLECTOR
SEATING
PLANE
RF
B
C
K
L
P
D
3X
M
H
J
S
B0.007 (0.18MM) C M
A
N
DIM MIN MAX MIN MAX
INCHESMILLIMETERS
A0.209 0.2305.31 5.84
B0.178 0.1954.52 4.95
C0.170 0.2104.32 5.33
D0.016 0.0210.41 0.53
E--- 0.030--- 0.76
F0.016 0.0190.41 0.48
N0.100 BSC2.54 BSC
H0.036 0.0460.91 1.17
J0.028 0.0480.71 1.22
K0.500 0.75012.70 19.05
L0.250 ---6.35 ---
M45 BSC45 BSC
R0.054 BSC1.37 BSC
P--- 0.050--- 1.27
__
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. DIMENSION J MEASURED FROM DIAMETER A TO EDGE.
4. LEAD TRUE POSITION TO BE DETERMINED AT THE GUAGE
PLANE DEFINED BY DIMENSION R.
5. DIMENSION F APPLIES BETWEEN DIMENSION P AND L.
6. DIMENSION D APPLIES BETWEEN DIMENSION L AND K.
7. BODY CONTOUR OPTIONAL WITHIN ZONE DEFINED BY DIMEN
SIONS A, B, AND T.
T--- 0.030--- 0.76
U0.100 ---2.54 ---
A
B
A
DETAIL X
U
NOTE 5
NOTES 4 & 6
C
U
E
2
31
DETAIL X
NOTE 7
T
LEAD IDENTIFICATION
DETAIL
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