Semiconductor Components Industries, LLC, 2001
January, 2001 – Rev. 6 1Publication Order Number:
MUN5311DW1T1/D
MUN5311DW1T1 Series
Preferred Devices
Dual Bias Resistor
Transistors
NPN and PNP Silicon Surface Mount
Transistors with Monolithic Bias
Resistor Network
The BRT (Bias Resistor Transistor) contains a single transistor with
a monolithic bias network consisting of two resistors; a series base
resistor and a base–emitter resistor. These digital transistors are
designed to replace a single device and its external resistor bias
network. The BRT eliminates these individual components by
integrating them into a single device. In the MUN5311DW1T1 series,
two complementary BRT devices are housed in the SOT–363 package
which is ideal for low power surface mount applications where board
space is at a premium.
•Simplifies Circuit Design
•Reduces Board Space
•Reduces Component Count
•Available in 8 mm, 7 inch/3000 Unit Tape and Reel
MAXIMUM RATINGS (TA = 25°C unless otherwise noted, common for Q1
and Q2, – minus sign for Q1 (PNP) omitted)
Rating Symbol Value Unit
Collector-Base Voltage VCBO 50 Vdc
Collector-Emitter Voltage VCEO 50 Vdc
Collector Current IC100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated) Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD187 (Note 1.)
256 (Note 2.)
1.5 (Note 1.)
2.0 (Note 2.)
mW
mW/°C
Thermal Resistance –
Junction-to-Ambient RθJA 670 (Note 1.)
490 (Note 2.) °C/W
Characteristic
(Both Junctions Heated) Symbol Max Unit
Total Device Dissipation
TA = 25°C
Derate above 25°C
PD250 (Note 1.)
385 (Note 2.)
2.0 (Note 1.)
3.0 (Note 2.)
mW
mW/°C
Thermal Resistance –
Junction-to-Ambient RθJA 493 (Note 1.)
325 (Note 2.) °C/W
Thermal Resistance –
Junction-to-Lead RθJL 188 (Note 1.)
208 (Note 2.) °C/W
Junction and Storage Temperature TJ, Tstg –55 to +150 °C
1. FR–4 @ Minimum Pad
2. FR–4 @ 1.0 x 1.0 inch Pad
SOT–363
CASE 419B
STYLE 1
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xx = Device Marking
= (See Page 2)
MARKING DIAGRAM
Preferred devices are recommended choices for future use
and best overall value.
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
Q1
R1
R2
R2
R1
Q2
(1)(2)(3)
(4) (5) (6)
123
654
xx
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2
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping
MUN5311DW1T1 SOT–363 11 10 10 3000/Tape & Reel
MUN5312DW1T1 SOT–363 12 22 22 3000/Tape & Reel
MUN5313DW1T1 SOT–363 13 47 47 3000/Tape & Reel
MUN5314DW1T1 SOT–363 14 10 47 3000/Tape & Reel
MUN5315DW1T1 (Note 3.) SOT–363 15 10 ∞3000/Tape & Reel
MUN5316DW1T1 (Note 3.) SOT–363 16 4.7 ∞3000/Tape & Reel
MUN5330DW1T1 (Note 3.) SOT–363 30 1.0 1.0 3000/Tape & Reel
MUN5331DW1T1 (Note 3.) SOT–363 31 2.2 2.2 3000/Tape & Reel
MUN5332DW1T1 (Note 3.) SOT–363 32 4.7 4.7 3000/Tape & Reel
MUN5333DW1T1 (Note 3.) SOT–363 33 4.7 47 3000/Tape & Reel
MUN5334DW1T1 (Note 3.) SOT–363 34 22 47 3000/Tape & Reel
MUN5335DW1T1 (Note 3.) SOT–363 35 2.2 47 3000/Tape & Reel
ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q1 (PNP) omitted)
Characteristic Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO – – 100 nAdc
Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO – – 500 nAdc
Emitter-Base Cutoff Current MUN5311DW1T1
(VEB = 6.0 V, IC = 0) MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
IEBO –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
mAdc
Collector-Base Breakdown Voltage (IC = 10 µA, IE = 0) V(BR)CBO 50 – – Vdc
Collector-Emitter Breakdown Voltage (Note 4.) (IC = 2.0 mA, IB = 0) V(BR)CEO 50 – – Vdc
3. New resistor combinations. Updated curves to follow in subsequent data sheets.
4. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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ELECTRICAL CHARACTERISTICS
(TA = 25°C unless otherwise noted, common for Q1 and Q2, – minus sign for Q1 (PNP) omitted) (Continued)
Characteristic Symbol Min Typ Max Unit
ON CHARACTERISTICS (Note 5.)
DC Current Gain MUN5311DW1T1
(VCE = 10 V, IC = 5.0 mA) MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
hFE 35
60
80
80
160
160
3.0
8.0
15
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
–
–
–
–
–
–
–
–
–
–
–
–
Collector-Emitter Saturation Voltage
(IC = 10 mA, IB = 0.3 mA)
(IC = 10 mA, IB = 5 mA) MUN5330DW1T1/MUN5331DW1T1
(IC = 10 mA, IB = 1 mA) MUN5315DW1T1/MUN5316DW1T1
MUN5332DW1T1/MUN5333DW1T1/MUN5334DW1T1
VCE(sat) – – 0.25 Vdc
Output Voltage (on)
(VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kΩ) MUN5311DW1T1
MUN5312DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
(VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kΩ) MUN5313DW1T1
VOL –
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
–
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
0.2
Vdc
Output Voltage (off)
(VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kΩ)
(VCC = 5.0 V, VB = 0.050 V, RL = 1.0 kΩ) MUN5330DW1T1
(VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kΩ) MUN5315DW1T1
MUN5316DW1T1
MUN5333DW1T1
VOH 4.9 – – Vdc
Input Resistor MUN5311DW1T1
MUN5312DW1T1
MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1
MUN5316DW1T1
MUN5330DW1T1
MUN5331DW1T1
MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R1 7.0
15.4
32.9
7.0
7.0
3.3
0.7
1.5
3.3
3.3
15.4
1.54
10
22
47
10
10
4.7
1.0
2.2
4.7
4.7
22
2.2
13
28.6
61.1
13
13
6.1
1.3
2.9
6.1
6.1
28.6
2.86
k Ω
Resistor Ratio MUN5311DW1T1/MUN5312DW1T1/MUN5313DW1T1
MUN5314DW1T1
MUN5315DW1T1/MUN5316DW1T1
MUN5330DW1T1/MUN5331DW1T1/MUN5332DW1T1
MUN5333DW1T1
MUN5334DW1T1
MUN5335DW1T1
R1/R2 0.8
0.17
–
0.8
0.055
0.38
0.038
1.0
0.21
–
1.0
0.1
0.47
0.047
1.2
0.25
–
1.2
0.185
0.56
0.056
5. Pulse Test: Pulse Width < 300 µs, Duty Cycle < 2.0%
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Figure 1. Derating Curve
300
200
150
100
50
0
–50 0 50 100 150
TA, AMBIENT TEMPERATURE (°C)
RθJA = 490°C/W
250
PD, POWER DISSIPATION (mW)
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5311DW1T1 NPN TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 2. VCE(sat) versus IC
1002030
IC, COLLECTOR CURRENT (mA)
10
1
0.1
TA=-25°C
75°C
25°C
40 50
Figure 3. DC Current Gain
Figure 4. Output Capacitance
1
0.1
0.01
0.001 020 40 50
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
TA=-25°C
25°C
Figure 5. Output Current versus Input Voltage
75°C
25°C
TA=-25°C
100
10
1
0.1
0.01
0.001 01 234
Vin, INPUT VOLTAGE (VOLTS)
56 78 910
Figure 6. Input Voltage versus Output Current
50
010203040
4
3
1
2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
75°C
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5311DW1T1 PNP TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 7. VCE(sat) versus IC
100
10
1
0.1
0.01
0.001 0
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
25°C
1 2 3 4 5 6 7 8 9 10
Figure 8. DC Current Gain
Figure 9. Output Capacitance Figure 10. Output Current versus Input
Voltage
Figure 11. Input Voltage versus Output Current
0.01
20
IC, COLLECTOR CURRENT (mA)
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLT
S
0.1
1
0 40 50
1000
1 10 100
IC, COLLECTOR CURRENT (mA)
TA=75°C
-25°C
100
10
0
IC, COLLECTOR CURRENT (mA)
0.1
1
10
100
10 20 30 40 50
TA=-25°C
25°C
75°C
75°C
IC/IB = 10
50
010203040
4
3
1
2
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
0
TA=-25°C
25°C
75°C
25°C
VCE = 10 V
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5312DW1T1 NPN TRANSIST OR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 12. VCE(sat) versus ICFigure 13. DC Current Gain
Figure 14. Output Capacitance Figure 15. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
101 100
75°C 25°C
100
0
Vin, INPUT VOLTAGE (VOLTS)
10
1
0.1
0.01
0.001 246810
TA=-25°C
0
IC, COLLECTOR CURRENT (mA)
100
TA=-25°C
75°C
10
1
0.1 10 20 30 40 50
25°C
Figure 16. Input Voltage versus Output
Current
0.001
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
)
TA=-25°C
75°C
25°C
0.01
0.1
1
40
IC, COLLECTOR CURRENT (mA)
020 50
50
0 10 203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
IC/IB = 10 VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5312DW1T1 PNP TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 17. VCE(sat) versus ICFigure 18. DC Current Gain
1000
10
IC, COLLECTOR CURRENT (mA)
100
10
1100
Figure 19. Output Capacitance
IC, COLLECTOR CURRENT (mA)
0 10 20 30
VO = 0.2 V
TA=-25°C
75°C
100
10
1
0.1 40 50
Figure 20. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 0 1 2 3 4
Vin, INPUT VOLTAGE (VOLTS)
5 6 7 8 9 10
Figure 21. Input Voltage versus Output Current
0.01
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
0.1
1
10
40
IC, COLLECTOR CURRENT (mA)
0 20 50
75°C
25°C
TA=-25°C
50
010203040
4
3
2
1
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
25°C
IC/IB = 10
25°C
-25°C
VCE = 10 V
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
75°C25°C
TA=-25°C
VO = 5 V
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5313DW1T1 NPN TRANSIST OR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 22. VCE(sat) versus IC
0246810
100
10
1
0.1
0.01
0.001
Vin, INPUT VOLTAGE (VOLTS)
TA=-25°C
75°C25°C
Figure 23. DC Current Gain
Figure 24. Output Capacitance
100
10
1
0.1
010 203040 50
IC, COLLECTOR CURRENT (mA)
Figure 25. Output Current versus Input Voltage
1000
10
IC, COLLECTOR CURRENT (mA)
TA=75°C
25°C
-25°C
100
10 1 100
25°C
75°C
50
010203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 26. Input Voltage versus Output Current
020 40 50
10
1
0.1
0.01
IC, COLLECTOR CURRENT (mA)
25°C
75°C
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS
)
VCE = 10 V
f = 1 MHz
IE = 0 V
TA = 25°C
VO = 5 V
VO = 0.2 V
IC/IB = 10
TA=-25°C
TA=-25°C
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5313DW1T1 PNP TRANSISTOR
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 27. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01 010203040
75°C
25°C
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 28. DC Current Gain
1000
100
10 1 10 100
IC, COLLECTOR CURRENT (mA)
-25°C
Figure 29. Output Capacitance Figure 30. Output Current versus Input Voltage
100
10
1
0.1
0.01
0.001 010
25°C
Vin, INPUT VOLTAGE (VOLTS)
-25°C
50
0 10203040
1
0.8
0.6
0.4
0.2
0
VR, REVERSE BIAS VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
123456 789
Figure 31. Input Voltage versus Output Current
100
10
1
0.1 0 10 20 30 40
IC, COLLECTOR CURRENT (mA)
TA=-25°C
25°C
75°C
50
IC/IB = 10
TA=-25°C25°C
TA=75°C
f = 1 MHz
lE = 0 V
TA = 25°C
VO = 5 V
TA=75°C
VO = 0.2 V
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5314DW1T1 NPN TRANSIST OR
10
1
0.1 01020304050
100
10
10246810
4
3.5
3
2.5
2
1.5
1
0.5
002468101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 32. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 33. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 34. Output Capacitance Figure 35. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob , CAPACITANCE (pF)
Figure 36. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10
300
250
200
150
100
50
02468 1520405060708090
f = 1 MHz
lE = 0 V
TA = 25°C
25°C
IC/IB = 10 TA=-25°C
TA=75°C25°C
-25°C
VO = 0.2 V TA=-25°C
75°C
VO = 5 V
25°C
75°C
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5314DW1T1 PNP TRANSISTOR
10
1
0.1 010 20 30 4050
100
10
10 246810
4.5
4
3.5
3
2.5
2
1.5
1
0.5
00 2 4 6 8101520253035404550
VR, REVERSE BIAS VOLTAGE (VOLTS)
Vin, INPUT VOLTAGE (VOLTS)
IC, COLLECTOR CURRENT (mA) hFE, DC CURRENT GAIN (NORMALIZED)
Figure 37. VCE(sat) versus IC
IC, COLLECTOR CURRENT (mA)
020406080
VCE(sat) , MAXIMUM COLLECTOR VOLTAGE (VOLTS)
Figure 38. DC Current Gain
1 10 100
IC, COLLECTOR CURRENT (mA)
Figure 39. Output Capacitance Figure 40. Output Current versus Input Voltage
Vin, INPUT VOLTAGE (VOLTS)
Cob, CAPACITANCE (pF)
Figure 41. Input Voltage versus Output Current
IC, COLLECTOR CURRENT (mA)
1
0.1
0.01
0.001
-25°C
25°C
TA=75°C
VCE = 10 V
180
160
140
120
100
80
60
40
20
02 4 6 8 15 20 40 50 60 70 80 90
f = 1 MHz
lE = 0 V
TA = 25°C
25°C
IC/IB = 10 TA=-25°C
TA=75°C25°C
-25°C
VO = 5 V
VO = 0.2 V 25°C
TA=-25°C
75°C
75°C
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TYPICAL ELECTRICAL CHARACTERISTICS – MUN5315DW1T1
Figure 42. DC Current Gain – PNP
IC, COLLECTOR CURRENT (mA)
1.0 10 100
HFE, DC CURRENT GAIN (NORMALIZED)
1000
100
Figure 43. DC Current Gain – NPN
IC, COLLECTOR CURRENT (mA)
1.0 10 100
HFE, DC CURRENT GAIN (NORMALIZED)
1000
100
TA = 25°C
VCE = 5.0 V
VCE = 10 V
TA = 25°C
VCE = 5.0 V
VCE = 10 V
TYPICAL ELECTRICAL CHARACTERISTICS – MUN5316DW1T1
Figure 44. DC Current Gain – PNP
IC, COLLECTOR CURRENT (mA)
1.0 10 100
HFE, DC CURRENT GAIN (NORMALIZED)
1000
100
Figure 45. DC Current Gain – NPN
IC, COLLECTOR CURRENT (mA)
1.0 10 100
HFE, DC CURRENT GAIN (NORMALIZED)
1000
100
TA = 25°C
VCE = 5.0 V
VCE = 10 V
TA = 25°C
VCE = 5.0 V
VCE = 10 V
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INFORMATION FOR USING THE SOT–363 SURFACE MOUNT PACKAGE
MINIMUM RECOMMENDED FOOTPRINTS FOR SURFACE MOUNTED APPLICATIONS
Surface mount board layout is a critical portion of the
total design. The footprint for the semiconductor packages
must be the correct size to insure proper solder connection
interface between the board and the package. With the
correct pad geometry, the packages will self align when
subjected to a solder reflow process.
SOT–363
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ÉÉÉ
ÉÉÉ
0.5 mm (min)
0.4 mm (min)
0.65 mm 0.65 mm
1.9 mm
SOT–363 POWER DISSIPATION
The power dissipation of the SOT–363 is a function of
the pad size. This can vary from the minimum pad size for
soldering to the pad size given for maximum power
dissipation. Power dissipation for a surface mount device is
determined by TJ(max), the maximum rated junction
temperature of the die, RθJA, the thermal resistance from
the device junction to ambient; and the operating
temperature, TA. Using the values provided on the data
sheet, PD can be calculated as follows:
PD = TJ(max) – TA
RθJA
The values for the equation are found in the maximum
ratings table on the data sheet. Substituting these values
into the equation for an ambient temperature TA of 25°C,
one can calculate the power dissipation of the device which
in this case is 256 milliwatts.
PD = 150°C – 25°C
490°C/W = 256 milliwatts
The 490°C/W for the SOT–363 package assumes the use
of the recommended footprint on a glass epoxy printed
circuit board to achieve a power dissipation of 256
milliwatts. There are other alternatives to achieving higher
power dissipation from the SOT–363 package. Another
alternative would be to use a ceramic substrate or an
aluminum core board such as Thermal Clad. Using a
board material such as Thermal Clad, an aluminum core
board, the power dissipation can be doubled using the same
footprint.
SOLDERING PRECAUTIONS
The melting temperature of solder is higher than the rated
temperature of the device. When the entire device is heated
to a high temperature, failure to complete soldering within
a short time could result in device failure. Therefore, the
following items should always be observed in order to
minimize the thermal stress to which the devices are
subjected.
•Always preheat the device.
•The delta temperature between the preheat and
soldering should be 100°C or less.*
•When preheating and soldering, the temperature of the
leads and the case must not exceed the maximum
temperature ratings as shown on the data sheet. When
using infrared heating with the reflow soldering
method, the difference should be a maximum of 10°C.
•The soldering temperature and time should not exceed
260°C for more than 10 seconds.
•When shifting from preheating to soldering, the
maximum temperature gradient should be 5°C or less.
•After soldering has been completed, the device should
be allowed to cool naturally for at least three minutes.
Gradual cooling should be used as the use of forced
cooling will increase the temperature gradient and
result in latent failure due to mechanical stress.
•Mechanical stress or shock should not be applied
during cooling.
* Soldering a device without preheating can cause
excessive thermal shock and stress which can result in
damage to the device.
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SOLDER STENCIL GUIDELINES
Prior to placing surface mount components onto a printed
circuit board, solder paste must be applied to the pads. A
solder stencil is required to screen the optimum amount of
solder paste onto the footprint. The stencil is made of brass
or stainless steel with a typical thickness of 0.008 inches.
The stencil opening size for the surface mounted package
should be the same as the pad size on the printed circuit
board, i.e., a 1:1 registration.
TYPICAL SOLDER HEATING PROFILE
For any given circuit board, there will be a group of
control settings that will give the desired heat pattern. The
operator must set temperatures for several heating zones,
and a figure for belt speed. Taken together, these control
settings make up a heating “profile” for that particular
circuit board. On machines controlled by a computer, the
computer remembers these profiles from one operating
session to the next. Figure 46 shows a typical heating
profile for use when soldering a surface mount device to a
printed circuit board. This profile will vary among
soldering systems but it is a good starting point. Factors that
can affect the profile include the type of soldering system in
use, density and types of components on the board, type of
solder used, and the type of board or substrate material
being used. This profile shows temperature versus time.
The line on the graph shows the actual temperature that
might be experienced on the surface of a test board at or
near a central solder joint. The two profiles are based on a
high density and a low density board. The Vitronics
SMD310 convection/infrared reflow soldering system was
used to generate this profile. The type of solder used was
62/36/2 Tin Lead Silver with a melting point between
177–189°C. When this type of furnace is used for solder
reflow work, the circuit boards and solder joints tend to
heat first. The components on the board are then heated by
conduction. The circuit board, because it has a large surface
area, absorbs the thermal energy more efficiently, then
distributes this energy to the components. Because of this
effect, the main body of a component may be up to 30
degrees cooler than the adjacent solder joints.
STEP 1
PREHEAT
ZONE 1
RAMP"
STEP 2
VENT
SOAK"
STEP 3
HEATING
ZONES 2 & 5
RAMP"
STEP 4
HEATING
ZONES 3 & 6
SOAK"
STEP 5
HEATING
ZONES 4 & 7
SPIKE"
STEP 6
VENT
STEP 7
COOLING
200°C
150°C
100°C
50°C
TIME (3 TO 7 MINUTES TOTAL) TMAX
SOLDER IS LIQUID FOR
40 TO 80 SECONDS
(DEPENDING ON
MASS OF ASSEMBLY)
205° TO 219°C
PEAK AT
SOLDER JOINT
DESIRED CURVE FOR LOW
MASS ASSEMBLIES
100°C
150°C
160°C
140°C
Figure 46. Typical Solder Heating Profile
DESIRED CURVE FOR HIGH
MASS ASSEMBLIES
170°C
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16
PACKAGE DIMENSIONS
SOT–363
CASE 419B–01
ISSUE G
NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
DIM
A
MIN MAX MIN MAX
MILLIMETERS
1.80 2.200.071 0.087
INCHES
B1.15 1.350.045 0.053
C0.80 1.100.031 0.043
D0.10 0.300.004 0.012
G0.65 BSC0.026 BSC
H--- 0.10---0.004
J0.10 0.250.004 0.010
K0.10 0.300.004 0.012
N0.20 REF0.008 REF
S2.00 2.200.079 0.087
V0.30 0.400.012 0.016
B0.2 (0.008) MM
123
A
GV
S
H
C
N
J
K
654
–B–
D6 PL
STYLE 1:
PIN 1. EMITTER 2
2. BASE 2
3. COLLECTOR 1
4. EMITTER 1
5. BASE 1
6. COLLECTOR 2
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