BLV2042T/R - Philips Semiconductors / NXP Semiconductors

DATA SH EET

Product speciﬁcation

Supersedes data of 1997 July 11 2000 May 08

DISCRETE SEMICONDUCTORS

BLV2042

UHF power transistor

M3D175

2000 May 08 2

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

FEATURES

•Emitter ballasting resistors for optimum

temperature profile

•Gold metallization ensures excellent reliability

•Internal input matching to achieve high power gain and

easy design of wideband circuits.

APPLICATIONS

•Common emitter class-AB operation in base stations in

the 1800 to 1990 MHz frequency range.

DESCRIPTION

NPN silicon planar epitaxial power transistor in an 8-lead

SOT409A SMD package with ceramic cap.

All leads are isolated from the mounting base.

PINNING - SOT409A

PIN DESCRIPTION

1, 4, 5 and 8 emitter

2 and 3 base

6 and 7 collector

handbook, halfpage

MSA467

Top view

Fig.1 Simplified outline and symbol.

QUICK REFERENCE DATA

RF performance at Tmb =25°C in a common emitter test circuit.

MODE OF OPERATION f

(MHz) VCE

(V) PL

(W) Gp

(dB) ηC

(%) dim

(dBc)

CW, class-AB 1950 26 4 ≥11 ≥40 −

CW, class-AB 1990 26 4 ≥11 ≥40 −

2-tone, class-AB f1= 1950; f2= 1950.1 26 4 (PEP) typ. 14 typ. 35 typ. −30

2000 May 08 3

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 60134).

Note

1. Transistor with metallized ground plane mounted on a printed-circuit board, see

“Mounting and soldering

recommendations in the General part of the associated handbook”

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT

VCBO collector-base voltage open emitter −60 V

VCEO collector-emitter voltage open base −28 V

VEBO emitter-base voltage open collector −4V

Ccollector current (DC) −1.2 A

IC(AV) collector current (average) −1.2 A

Ptot total power dissipation Tmb =25°C; note 1 −14.6 W

Tstg storage temperature −65 +150 °C

Tjoperating junction temperature −200 °C

handbook, halfpage

10−1

MGU192

110

CE (V)

(A)

102

(1)

Fig.2 DC SOAR.

(1) Ts=60°C.

handbook, halfpage

0 200

Ts (°C)

40 80 120

Ptot

(W)

160

MGU193

Fig.3 Total power dissipation as a function of the

soldering point temperature.

2000 May 08 4

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

THERMAL CHARACTERISTICS

Note

1. Transistor with metallized ground plane mounted on a printed-circuit board, see

“Mounting and soldering

recommendations in the General part of the associated handbook”

SYMBOL PARAMETER CONDITIONS VALUE UNIT

Rth j-mb thermal resistance from junction to

mounting base Ptot = 14.6 W; Tmb =25°C; note 1 12 K/W

CHARACTERISTICS

Tj=25°C unless otherwise speciﬁed.

SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT

V(BR)CBO collector-base breakdown voltage open emitter; IC=5mA 60 −−V

(BR)CEO collector-emitter breakdown voltage open base; IC=10mA 28 −−V

(BR)EBO emitter-base breakdown voltage open collector; IE= 0.5 mA 4 −−V

CES collector leakage current VCE = 26 V; VBE =0 −−1.3 mA

hFE DC current gain VCE = 26 V; IC= 600 mA 30 −120

Cccollector capacitance VCB = 26 V; IE=i

e= 0; f = 1 MHz −6−pF

Cre feedback capacitance VCE = 26 V; IC= 0; f = 1 MHz −2.5 −pF

Fig.4 DC current gain as a function of collector

current; typical values.

(1) VCE = 26 V; tp= 500 µs; δ=<1%.

(2) VCE =10V.

handbook, halfpage

120

hFE

IC (A)

(1)

(2)

0.4 0.8 1.61.2

MGD936

Fig.5 Capacitance as a function of

collector-emitter voltage; typical values.

f = 1 MHz.

handbook, halfpage

050

(pF)

VCE (V)

10 20 30 40

MGD947

Cre

2000 May 08 5

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

APPLICATION INFORMATION

RF performance at Tmb =25°C in a common emitter test circuit.

Ruggedness in class-AB operation

The BLV2042 is capable of withstanding a load mismatch corresponding to VSWR = 20 : 1 through all phases under the

following conditions: f = 1950 MHz; VCE = 26 V; ICQ = 15 mA; PL= 4 W; Tmb =25°C.

MODE OF OPERATION f

(MHz) VCE

(V) ICQ

(mA) PL

(W) Gp

(dB) ηC

(%) dim

(dBc)

CW, class-AB 1950 26 15 4 ≥11 ≥40 −

typ. 13 typ. 43

CW, class-AB 1990 26 15 4 ≥11 ≥40 −

2-tone, class-AB f1= 1950; f2= 1950.1 26 15 4 (PEP) typ. 14 typ. 35 typ. −30

handbook, halfpage

01 5

(W)

(dB) ηC

(%)

23 4

MGU190

ηC

Fig.6 Power gain and collector efficiency as

functions of load power; typical values.

CW, class-AB; VCE = 26 V; ICQ = 15 mA; f = 1950 MHz;

Tmb =25°C.

handbook, halfpage

00.1 0.2 0.4

PD (W)

(W)

0.3

MGU191

Fig.7 Load power as a function of drive power;

typical values.

CW, class-AB; VCE = 26 V; ICQ = 15 mA; f = 1950 MHz;

Tmb =25°C.

2000 May 08 6

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

Fig.8 Power gain and collector efficiency as

functions of peak envelope load power;

typical values.

VCE = 26 V; ICQ = 15 mA; f1= 1950 MHz; f2= 1950.1 MHz.

handbook, halfpage

01 5

16 80

23 4

MGD950

(dB)

GpηC

ηC

(%)

PL (PEP) (W)

Fig.9 Peak envelope load power as a function of

peak envelope drive power; typical values.

VCE = 26 V; ICQ = 15 mA; f1= 1950 MHz; f2= 1950.1 MHz.

handbook, halfpage

(PEP)

(W)

PD (PEP) (W)

0.05 0.1 0.2

0.15

MGL163

Fig.10 Third order intermodulation distortion as a

function of peak envelope load power;

typical values.

VCE = 26 V; f1= 1950 MHz; f2= 1950.1 MHz.

(1) ICQ = 15 mA. (2) ICQ = 40 mA. (3) ICQ =60mA.

handbook, halfpage

−20

−30

−40

−50 15234

MGD951

(dBc)

PL (PEP) (W)

(3)

(2)

(1)

Fig.11 Intermodulation distortion as a function of

peak envelope load power; typical values.

VCE = 26 V; ICQ = 15 mA; f1= 1950 MHz; f2= 1950.1 MHz.

handbook, halfpage

01 5

−20

−30

−50

−60

−40

23 4

MGD952

dim

(dBc)

PL (PEP) (W)

2000 May 08 7

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

Test circuit information

Fig.12 Class-AB test circuit at 1950 MHz.

handbook, full pagewidth

,,,,,,

,,,,,

L1 L5

DUT L7

MGD961

C10C11

C5 C3C4

+VC

+Vbias L9

C8 RF-out

RF-in

L3 L6

2000 May 08 8

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

List of components (see Figs 12 and 13)

Notes

1. American Technical Ceramics type 100B or capacitor of the same quality.

2. American Technical Ceramics type 100A or capacitor of the same quality.

3. The striplines are on a double copper-clad printed-circuit board with epoxy fibreglass dielectric (εr= 6.15);

thickness 0.64 mm.

COMPONENT DESCRIPTION VALUE DIMENSIONS CATALOGUE No.

C1, C9 multilayer ceramic chip capacitor; note 1 100 pF

C2, C6 multilayer ceramic chip capacitor; note 2 3 pF

C3, C8 multilayer ceramic chip capacitor; note 2 27 pF

C4, C10 multilayer ceramic chip capacitor 100 nF 2222 581 16641

C5, C11 tantalum SMD capacitor 47 µF; 35 V

C7 multilayer ceramic chip capacitor; note 2 1.2 pF

L1 stripline; note 3 50 Ωlength 9.9 mm

width 0.91 mm

L2 stripline; note 3 50 Ωlength 6.66 mm

width 0.91 mm

L3 stripline; note 3 10 Ωlength 4 mm

width 8 mm

L4 stripline; note 3 31 Ωlength 3 mm

width 2 mm

L5 stripline; note 3 31 Ωlength 3 mm

width 2 mm

L6 stripline; note 3 8.3 Ωlength 17.25 mm

width 10.3 mm

L7 stripline; note 3 50 Ωlength 2.42 mm

width 0.91 mm

L8 stripline; note 3 50 Ωlength 6.14 mm

width 0.91 mm

L9 grade 4S2 ferroxcube chip-bead 4330 030 36301

R1 metal ﬁlm resistor 100 Ω; 0.4 W

2000 May 08 9

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

Fig.13 Component layout for 1950 MHz class-AB test circuit.

Dimensions in mm.

The components are situated on one side of the copper-clad epoxy fibreglass board, the other side is not etched and serves as a ground plane.

Earth connections from the component side to the ground plane are made by through metallization.

handbook, full pagewidth

MGD965

C11 C10

L1 L2 L3 L4 L5

L7 L8

C6 C7

2000 May 08 10

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

Fig.14 Input impedance as a function of frequency

(series components); typical values.

VCE = 26 V; ICQ = 15 mA; PL= 4 W; Tmb =25°C.

handbook, halfpage

1800 1850 1900 2000

f (MHz)

(Ω)

1950

MGD953

Fig.15 Load impedance as a function of frequency

(series components); typical values.

VCE = 26 V; ICQ = 15 mA; PL= 4 W; Tmb =25°C.

handbook, halfpage

1800

f (MHz)

(Ω)

01850 1900 20001950

MGD954

MOUNTING RECOMMENDATIONS

Heat from the device is transferred via the leads and the

metallized underside. For optimum heat transfer it is

recommended that the transistor be mounted on a

grounded metallized area on the component side of the

printed-circuitboard.Thismetallizedareashouldcontaina

large number of metallized, solder-filled through-holes.

The non-component side of the printed-circuit board forms

a ground plane. When the printed-circuit board is mounted

on the heatsink using heatsink compound, a thermal

resistance from mounting base to heatsink of 0.9 K/W can

be attained.

Fig.16 Power gain as a function of frequency;

typical values.

VCE = 26 V; ICQ = 15 mA; PL= 4 W; Tmb =25°C.

handbook, halfpage

1800 1850 1900 2000

1950

MGD955

(dB)

f (MHz)

Fig.17 Definition of transistor impedance.

handbook, halfpage

MBA451

ZiZL

2000 May 08 11

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

PACKAGE OUTLINE

REFERENCES

OUTLINE

VERSION EUROPEAN

PROJECTION ISSUE DATE

IEC JEDEC EIAJ

SOT409A

0 2.5 5 mm

scale

Ceramic surface mounted package; 8 leads SOT409A

UNIT cbDE

2HH

1LQ

1α

mm 0.23

0.18

0.58

0.43 4.93

4.01

5.94

5.03

5.16

5.00 4.14

3.99

1.27 4.39

4.24

7.47

7.26 0.25 7°

0°

0.25

DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)

1.02

0.51 0.10

0.00

2.36

2.06

inches 0.009

0.007

0.023

0.017 0.194

0.158

0.234

0.198 0.203

0.197 0.163

0.157 0.050 0.173

0.167

0.294

0.286 0.010 7°

0°

0.010

0.040

0.020 0.004

0.000

0.093

0.081

98-01-27

2000 May 08 12

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

DATA SHEET STATUS

Note

1. Please consult the most recently issued data sheet before initiating or completing a design.

DATA SHEET STATUS PRODUCT

STATUS DEFINITIONS (1)

Objective speciﬁcation Development This data sheet contains the design target or goal speciﬁcations for

product development. Speciﬁcation may change in any manner without

notice.

Preliminary speciﬁcation Qualiﬁcation This data sheet contains preliminary data, and supplementary data will be

published at a later date. Philips Semiconductors reserves the right to

make changes at any time without notice in order to improve design and

supply the best possible product.

Product speciﬁcation Production This data sheet contains ﬁnal speciﬁcations. Philips Semiconductors

reserves the right to make changes at any time without notice in order to

improve design and supply the best possible product.

DEFINITIONS

Short-form specification  The data in a short-form

specification is extracted from a full data sheet with the

same type number and title. For detailed information see

the relevant data sheet or data handbook.

Limiting values definition Limiting values given are in

accordance with the Absolute Maximum Rating System

(IEC 60134). Stress above one or more of the limiting

values may cause permanent damage to the device.

These are stress ratings only and operation of the device

atthese oratany otherconditionsabove thosegivenin the

Characteristics sections of the specification is not implied.

Exposure to limiting values for extended periods may

affect device reliability.

Application information  Applications that are

described herein for any of these products are for

illustrative purposes only. Philips Semiconductors make

norepresentationor warrantythatsuchapplicationswill be

suitable for the specified use without further testing or

modification.

DISCLAIMERS

Life support applications  These products are not

designed for use in life support appliances, devices, or

systems where malfunction of these products can

reasonably be expected to result in personal injury. Philips

Semiconductorscustomersusingorsellingthese products

for use in such applications do so at their own risk and

agree to fully indemnify Philips Semiconductors for any

damages resulting from such application.

Right to make changes  Philips Semiconductors

reserves the right to make changes, without notice, in the

products, including circuits, standard cells, and/or

software, described or contained herein in order to

improve design and/or performance. Philips

Semiconductors assumes no responsibility or liability for

theuseofanyoftheseproducts,conveysnolicenceortitle

under any patent, copyright, or mask work right to these

products,and makes norepresentationsor warranties that

these products are free from patent, copyright, or mask

work right infringement, unless otherwise specified.

2000 May 08 13

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

NOTES

2000 May 08 14

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

NOTES

2000 May 08 15

Philips Semiconductors Product speciﬁcation

UHF power transistor BLV2042

NOTES

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2000 69

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Printed in The Netherlands 613524/03/pp16 Date of release: 2000 May 08 Document order number: 9397 750 07006