© 2005 IXYS All rights reserved 1 - 2
0540
Advanced Technical Information
IXYS reserves the right to change limits, test conditions and dimensions.
MWI 60-06 G6K
Features
• IGBTs
- low saturation voltage
- fast switching
- short tail current for optimized
performance also in resonant
circuits
HiPerFREDTM diode:
- fast reverse recovery
- low operating forward voltage
- low leakage current
• Industry Standard Package
- solderable pins for PCB mounting
- isolated copper base plate
UL registered E72873
Typical Applications
• AC drives
IGBTs
Symbol Conditions Maximum Ratings
VCES TVJ = 25°C to 150°C 600 V
VGES ± 20 V
IC25 TC = 25°C 60 A
IC80 TC = 80°C 41 A
ICM VGE = ±15 V; RG = 10 ; TVJ = 125°C 80 A
VCEK RBSOA; clamped inductive load; L = 100 µH VCES
Ptot TC = 25°C 180 W
Symbol Conditions Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min. typ. max.
VCE(sat) IC = 30 A; VGE = 15 V; TVJ = 25°C 2.3 2.8 V
TVJ = 125°C 2.0 V
VGE(th) IC = 0.25 mA; VGE = VCE 35V
ICES VCE = VCES; VGE = 0 V; TVJ = 25°C 0.2 mA
TVJ = 125°C 1.2 mA
IGES VCE = 0 V; VGE = ± 20 V 100 nA
td(on) 20 ns
tr20 ns
td(off) 130 ns
tf80 ns
Eon 0.6 mJ
Eoff 0.5 mJ
Cies VCE = 25 V; VGE = 0 V; f = 1 MHz 2500 pF
QGon VCE = 300 V; VGE = 15 V; IC = 30 A 95 nC
RthJC (per IGBT) 0.7 K/W
RthCH 0.25 K/W
Inductive load, TVJ = 125°C
VCE = 400 V; IC = 30 A
VGE = ±15 V; RG = 3
IC25 = 60 A
VCES = 600 V
VCE(sat) typ. = 2.3 V
IGBT Module
Sixpack
Square RBSOA
10, 23
9, 24
14
13
6
5
4
3
22
21
2
1
18
17
15, 16
11, 12
19, 20
8
7
NTC
© 2005 IXYS All rights reserved 2 - 2
0540
Advanced Technical Information
IXYS reserves the right to change limits, test conditions and dimensions.
MWI 60-06 G6K
Equivalent Circuits for Simulation
Conduction
IGBT (typ. at VGE = 15 V; TJ = 125°C)
V
0
= 1.1 V; R
0
= 21.5 m
Free Wheeling Diode (typ. at TJ = 125°C)
V
0
= 1.20 V; R
0
= 19 m
Thermal Response
IGBT (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
Free Wheeling Diode (typ.)
C
th1
= tbd J/K; R
th1
= tbd K/W
C
th2
= tbd J/K; R
th2
= tbd K/W
Module
Symbol Conditions Maximum Ratings
TVJ operating -40...+125 °C
TVJM -40...+150 °C
Tstg -40...+125 °C
VISOL IISOL 1 mA; 50/60 Hz 2500 V~
MdMounting torque (M4) 2.0 - 2.2 Nm
Symbol Conditions Characteristic Values
min. typ. max.
dSCreepage distance on surface 12.7 mm
dAStrike distance in air 12.7 mm
Weight 40 g
Diodes
Symbol Conditions Maximum Ratings
IF25 TC = 25°C 48 A
IF80 TC = 80°C 33 A
Symbol Conditions Characteristic Values
min. typ. max.
VFIF = 30 A; VGE = 0 V; TVJ = 25°C 2.2 2.6 V
TVJ = 125°C 1.7 V
IRM 5A
trr 65 ns
RthJC (per Diode) 0.9 K/W
RthCH 0.3 K/W
IF = 30 A; diF/dt = -400 A/µs; TVJ = 100°C
VR = 300 V; VGE = 0 V
Temperature Sensor NTC
Symbol Conditions Characteristic Values
min. typ. max.
R25 T = 25°C 4.45 4.7 5.0 k
B25/85 3510 K
Dimensions in mm (1 mm = 0.0394")