ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
V
D
R
M
=
2800
V
I
T(AV)M
=
3740
A
I
T(RMS)
=
5880
A
I
TSM
=
60×10
3
A
V
T0
=
0.95
V
r
T
=
0.1
m
Ω
Phase Control Thyristor
5STP 33L2800
Doc. No. 5SYA1011-04 May 07
• Patented free-floating silicon technology
• Low on-state and switching losses
• Designed for traction, energy and industrial applications
• Optimum power handling capability
• Interdigitated amplifying gate
Blocking
Maximum rated values 1)
Parameter Symbol
Conditions 5STP 33L2800 Unit
Max repetitive peak forward
and reverse blocking voltage VDRM,
VRRM f = 50 Hz, tp = 10 ms,
Tvj = 5…125°C, Note 1
t
VAK VDRM,VRRM
tp
2800 V
Critical rate of rise of
commutating voltage dv/dtcrit Exp. to 1880 V, Tvj = 125°C 1000 V/µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Forward leakage current IDRM VDRM, Tvj = 125°C 400 mA
Reverse leakage current IRRM VRRM, Tvj = 125°C 400 mA
Note 1: Voltage de-rating factor of 0.11% per °C is applicable for Tvj below +5 °C
Mechanical data
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Mounting force FM 63 70 84 kN
Acceleration a Device unclamped 50 m/s2
Acceleration a Device clamped 100 m/s2
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Weight m 1.45 kg
Housing thickness H FM = 70 kN, Ta = 25 °C 25.8 26.4 mm
Surface creepage distance DS 36 mm
Air strike distance Da 15 mm
1) Maximum rated values indicate limits beyond which damage to the device may occur
5STP 33L2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1011-04 May 07 page 2 of 7
On-state
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Average on-state current IT(AV)M Half sine wave, Tc = 70 °C 3740 A
RMS on-state current IT(RMS) 5880 A
Peak non-repetitive surge
current ITSM 60×103 A
Limiting load integral I2t
tp = 10 ms, Tvj = 125 °C, sine wave
after surge: VD = VR= 0 V 18×106 A2s
Peak non-repetitive surge
current ITSM 65×103 A
Limiting load integral I2t
tp = 8.3 ms, Tvj = 125 °C, sine wave
after surge: VD = VR= 0 V 17.5×106 A2s
Characteristic values
Parameter Symbol
Conditions min typ max Unit
On-state voltage VT IT = 3000 A, Tvj = 125 °C 1.23 V
Threshold voltage V(T0) 0.95 V
Slope resistance rT IT = 2000 A - 6000 A, Tvj= 125 °C 0.1 mΩ
Holding current IH Tvj = 25 °C 100 mA
Tvj = 125 °C 60 mA
Latching current IL Tvj = 25 °C 500 mA
Tvj = 125 °C 300 mA
Switching
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Critical rate of rise of on-
state current di/dtcrit Cont.
f = 50 Hz
250 A/µs
Critical rate of rise of on-
state current di/dtcrit
Tvj = 125 °C,
IT = IT(AV),
VD ≤ 1070 V,
IFG = 2 A, tr = 0.5 µs Cont.
f = 1Hz 1000 A/µs
Circuit-commutated turn-off
time tq Tvj = 125°C, ITRM = 2000 A,
VR = 200 V, diT/dt = -1.5 A/µs,
VD ≤ 0.67⋅VDRM, dvD/dt = 20 V/µs
400 µs
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Reverse recovery charge Qrr 1000 2200 µAs
Reverse recovery current IRM Tvj = 125°C, ITRM = 2000 A,
VR = 200 V,
diT/dt = -1.5 A/µs 35 55 A
Gate turn-on delay time tgd Tvj = 25 °C, VD = 0.4⋅VRM, IFG = 2 A,
tr = 0.5 µs 3 µs
5STP 33L2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1011-04 May 07 page 3 of 7
Triggering
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Peak forward gate voltage V
FGM 12 V
Peak forward gate current IFGM 10 A
Peak reverse gate voltage V
RGM 10 V
Average gate power loss PG(AV) see Fig. 9 W
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Gate-trigger voltage VGT Tvj = 25 °C 2.6 V
Gate-trigger current IGT Tvj = 25 °C 400 mA
Gate non-trigger voltage VGD VD = 0.4 x VDRM, Tvjmax = 125 °C 0.3 V
Gate non-trigger current IGD VD = 0.4 x VDRM, Tvjmax = 125°C 10 mA
Thermal
Maximum rated values 1)
Parameter Symbol
Conditions min typ max Unit
Operating junction
temperature range Tvj 125 °C
Storage temperature range T
stg -40 140 °C
Characteristic values
Parameter Symbol
Conditions min typ max Unit
Thermal resistance junction
to case Rth(j-c) Double-side cooled
Fm = 63...84 kN 7 K/kW
Rth(j-c)A Anode-side cooled
Fm = 63...84 kN 14 K/kW
Rth(j-c)C Cathode-side cooled
Fm = 63...84 kN 14 K/kW
Thermal resistance case to
heatsink Rth(c-h) Double-side cooled
Fm = 63...84 kN 1.5 K/kW
Rth(c-h) Single-side cooled
Fm = 63...84 kN 3 K/kW
Analytical function for transient thermal
impedance:
)e-(1R = (t)Z n
1i
t/-
i c)-th(j ∑
=
i
τ
i 1 2 3 4
Ri(K/kW) 4.700 0.853 1.070 0.490
τi(s) 0.4787 0.0824 0.0104 0.0041
Fig. 1 Transient thermal impedance (junction-to-
case) vs. time
5STP 33L2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1011-04 May 07 page 4 of 7
On-state characteristic model:
T
ID
T
IC
T
IBA
T
V
⋅++⋅+⋅+= )1ln(
max
Valid for iT = 400 – 11000 A
A B C D
731.2×10-3 79.0×10-6 17.9×10-3 2.314×10-3
Fig. 2 On-state characteristics,
Tj=125°C, 10ms half sine Fig. 3 On-state voltage characteristics
Fig. 4 On-state power dissipation vs. mean on-state
current, turn-on losses excluded Fig. 5 Max. permissible case temperature vs. mean
on-state current, switching losses ignored
5STP 33L2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1011-04 May 07 page 5 of 7
Fig. 6 Surge on-state current vs. pulse length,
half-sine wave Fig. 7 Surge on-state current vs. number of pulses,
half-sine wave, 10 ms, 50Hz
IGM
IGon
100 %
90 %
10 %
IGM ≈ 2..5 A
IGon ≥ 1.5 IGT
diG/dt ≥ 2 A/µs
tr≤ 1 µs
tp(IGM)≈ 5...20 µs
diG/dt
tr
tp (IGM)
IG (t)
t
tp (IGon)
Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss
Fig. 10 Reverse recovery charge vs. decay rate of
on-state current Fig. 11 Peak reverse recovery current vs. decay rate
of on-state current
5STP 33L2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
Doc. No. 5SYA1011-04 May 07 page 6 of 7
Turn-on and Turn-off losses
Fig. 12 Turn-on energy, half sinusoidal waves Fig. 13 Turn-on energy, rectangular waves
Fig. 14 Turn-off energy, half sinusoidal waves Fig. 15 Turn-off energy, rectangular waves
Qrr
IT(t), V(t)
t
-diT/dt
IT(t)
-V0
-VRRM
V(t)
-IRRM
-dv/dtcom
Total power loss for repetitive waveforms:
fWfWPP offonTTOT ⋅+⋅+=
where
dtIVI
T
PT
TTTT ∫⋅= 0)(
1
Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss
5STP 33L2800
ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice.
ABB Switzerland Ltd Doc. No. 5SYA1011-04 May 07
Semiconductors
Fabrikstrasse 3
CH-5600 Lenzburg, Switzerland
Telephone +41 (0)58 586 1419
Fax +41 (0)58 586 1306
Email abbsem@ch.abb.com
Internet www.abb.com/semiconductors
g
g
Fig. 18 Device Outline Drawing
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Please refer to http://www.abb.com/semiconductors for current version of documents.
