LITE) | High Density Mountiong M Type Photocoupler LTV816V/LTV826/LTV846 LTV816S/LTV826S/LTV846S LTV816M/LTV826M/LTV846M Features Package Dimensions > Current transfer ratio vear Code Wee Code *2 Pin No. ond internal ( CTR: MIN. 50% at Ir = 5mA, Vce = 5V ) ~ oy of. sernection Geom * High input-output isolation voltage : i ZL. . ( Viso : 5,000Vims ) borg + Compact dual-in-line package 816 estos LTV816 : 1-channel type a (256) LTV826 : 2-channel type scone fr LTV846 : 4-channel type sectory Code *3 L 0 UL approved in process diy Ub 1 2 rT - Options Available : 1. Anace 3, Emitter a -Leads with 0.4 (10.16mm) Spacing (M Type) Colnade Colleton 5 -Lead Bends for Surface Mounting (S Type) 8 -Tape and Reel of Type | for SMD(Add"-TA"Suffix) any 182405 eo -Tape and Reel of Type I! for SMD(Add"-TA1"Suffix) i = -VDE 0884 Approvals (Add "-V" Suffix) 4 7 Applications - 1. Programmable controllers, computers. 2. System appliances, measuring instruments. 3. Signal transmission between circuits of different potentials and impedances. 95#0.1 7.62 ~ 998 12.5420.25 (2) 1 Notes : 1. Year date code. 2. 2-digit work week. 3. Factory code shall be marked (Z : Taiwan, Y : Thai- land). 4, Rank shalt be or shall not be marked. 5. All dimensions are in millimeters (inches). 6. Tolerance is + 0.25mm (.010") unless otherwise noted. 7. Specifications are subject to change without notice. 4-77Pin No. ond internal Year Code *1 Week Code *2 connection dicgram 7 gy fp 8 7 6 5 beard Lot-L4 LTV826 65405 {.256) 3 Anode, 2 | Factory Code *3 dito Ub dil ib 1 2 F 1,3. Anode 5,7. Emitter 2,4. Cathode 68. Collec:or 9.6840.5 7.6240.3 (381) 0.3538 (014) 7.62 ~ 9. 2.544025 0,540.5 |__762~ 998 __| CY) {.019) Yeor Code_*1 Week Code *2 go oF on CR oy ip om FP PIN NO. AND INTERNAL CONNECTION DIAGRAM (256) 3 Anode, Z Ub db Ub do Ub dU OU 16 15 4 3 2 " 10 9 sf oA LTV846 65405 5 8 7 8 1,3,5,7. Anode 9,11,13,15. Emilter 2,468. Cothade 10,12,14,16. Collector 19.8440.5 7.52403 (.781) 3,540.5 138) A O.5STYP Lo (02) 2,840.5 3.30.5 (110) 2.5440.25 7.$2 ~ 9.98 (a) (.02) 4-78Absolute Maximum Ratings (Ta=25'C) Parameter Symbol Rating Unit Forward Current IF 50 mA Input Reverse Voltage VR 6 V Power Dissipation P 70 mw Collector - Emitter Voltage VcEO 80 Vv Emitter - Collector Voltage VECO 6 Vv Output Collector Current Ic 50 mA Collector Power Dissipation Pc 150 mW : Total Power Dissipation Ptot 200 mw 2 *1 Isolation Voltage Viso 5,000 Vims : Operating Temperature Topr -30 ~ +100 Cc a Storage Temperature Tstg -55 ~ +125 Cc *2 Soldering Temperature Tsol 260 c * 4. AC for 1 minute,40 ~ 60%R.H. * Isolation voltage shall be measured using the following method. (1) Short between anode and cathode on the primary side and between collector, emitter and base on the secondary side. ) The isolation voltage tester with zero-cross circuit shall be used. @ The waveform of applied voltage shall be a sine wave. * 2. For 10 seconds. 4-794-80 Electrical/Optical Characteristics (Ta=25'C) Parameter Symbol| Min. Typ. Max. Unit Conditions Forward Voltage VF - 1.2 1.4 Vv lF=20mA 3 Reverse Current Ir _ - 10 wA Vr=4V Terminal Capacitance Ct _ 30 250 pF V=0, f=KHz Collector Dark Current IcEO - - 100 nA VceE=20V | Collector-Emitter _ _ _ 8 Breakdown Voltage BVcEO 80 Vv Ic=0.1mA Emitter-Collector Breakdown Voltage BVECo 6 ~ V le=10HA Colfector Current Ic 2.5 - 30 mA ic=<5mA *1 Current Transfer Ratio cmr | 50 ~ Boo | % | Yce=SV = = | Collector-Emitter _ IF=20mA @ | Saturation Voltage Vce(sat) 0.1 0.2 V Ic=imA oO Q | Isolation Resistance Riso |5X10} 10" - a DC500V, 40 ~ 60%R.H. pat) | Floating Capacitance Cr _ 0.6 1 pF V=0, f=iMHz o a . _ _ Vce=5V, Ic=2mA s - Cut-Off Frequency fe 80 kHz RL=100 9 ,-3dB Response Time (Rise) tr 4 18 nS VoE=2V, Ic=2mA Response Time (Fall) tt - 3 18 aS Ri=100 0 *cTR = x 100% IFi Supplement Rank Table of Current Transfer Ratio CTR Mode! No. Rank Mark CTR(%) LTV-816 L L . 50~100 LTV-816 A A 80~160 LTV-816 B B 130~260 LTV-816 C Cc 200~400 LTV-816 D D 300~-600 LTV-816 LorAorBorCorD 50~600 IF=5mA Conditions Vce=5V Ta=25 C wn a WW ! a as) e) S) Oo E [e) aa o Typical Electrical/Optical Characteristic Curves (25 C Ambient Temperature Unless Otherwise Noted) Fig.1 Forward Current Vs. Ambient Temperature Fig. 2 Collector Power Dissipation Vs. Ambient Temperature 200 180 Forward current Ir (mA) Collector power dissipation Pc (mW) 100 Pp N 50 | N 0 -30 0 25 50 75 100 125 -30 0 25 50 75 100 125 ient r Tal Ambient Temperature Ta( 'C ) Ambient Temperature Ta( C ) 4-814-82 Fig. 3 Forward Current a S 6 9 =0.5mA c 5 Ima 3 : 3mA = SmA oO | 3 7mA 3s gS | Ss | ow 20 (0 SS 0 2 4 6 8B 10 12 14 16 18 20 Forward Current IF(mA) Fig. Forward Current Vs. Forward Voltage 500 Ta=75C = 200 50C ~ 100 oo 50 c 2 5 20 PP 10 a z= 5 2 2 1 0 #05 14.0 1.5 2.0 2.5 3.0 Forward Voltage VrF(V) Fig. 7 Relative Current Transfer Ration Vs. 9. Ambient Temperature 150 Relative current transfer ratio (%) lp=SmA Ve =5V 100 30 0 -30 260 25 SO 75 100 Ambient Temperature Ta(C ) Collector-Emitter Satruation Voltage Vs. Current Transfer Ratio Vs. Fig. 4 Forward Current 200 y BV > cE= ge 180 Ta=25C ao 160 oe 140 2 % 120 5 100 c 80 2c ~ 60 40 5 a 20 1 2 5 10 20 50 Forward Current IF(mA) Fig. 6 Collector Current Vs. Collector-emitter Voltage = IN Ez Ip=30mA \ 2 20mA a s 8 3 oO Collector-emitter Voltage VcE(V) Fig. 8 Collector-emitter Sturation Voltage Vs. . Ambient Temperature 0.16 Collector~emitter saturation voltage Vce (sat) (V) lp=20mA Ic=1mA 0.14 0.12 0.10 0.08 0.06 0.04 0.02 0 -25 0 25 50 75 100 Ambient Temperature Ta(C )Fig. Collector dark current | cq (A) Fig. 11 Voltage gain Av (dB) 9 Collector Dark Current Vs. Ambient Temper- ature 9 | Vop=20V -10 -11 -25 0 25 50 75 100 Ambient Temperature Ta(C ) Frequency Response Vce=2v le=2mA To=25C Frequency f(kHz) Test Circuit For Response Time Vee (nput , Output Output \ 10% Input | Fig. 10 Response Time Vs. Load Resistance 500 Ver =2V 200 | lc=2mA 100 loz2sc zp 50 a. ~~ 20 oa E 10 a 3 a 2 uo ao 2 a 0.2 6.t 0.05 0.10205 1 2 5 Forward Current IF(mA) Test Circuit For Frequency Response 10 n ind Lu | o a) Oo oO Oo | e) x a Voc 4-83