©2002 Fairchild Semiconductor Corporation RHRP3040, RHRP3060 Rev. B
RHRP3040, RHRP3060
30A, 400V - 600V Hyperfast Diodes
The RHRP3040 and RHRP3060 are hyperfast diodes with
soft recovery characteristics (t
rr
< 40ns). They have half the
recovery time of ultrafast diodes and are of silicon nitride
passivated ion-implanted epitaxial planar construction.
These devices are intended for use as freewheeling/
clamping diodes and rectifiers in a variety of switching power
supplies and other power switching applications. Their low
stored charge and hyperfast soft recovery minimize ringing
and electrical noise in many power switching circuits, thus
reducing power loss in the switching transistors.
Formerly developmental type TA49063.
Symbol
Features
Hyperfast with Soft Recovery. . . . . . . . . . . . . . . . . . <40ns
Operating Temperature . . . . . . . . . . . . . . . . . . . . . . 175
o
C
Reverse Voltage Up To . . . . . . . . . . . . . . . . . . . . . . . . 600V
Avalanche Energy Rated
Planar Construction
Applications
Switching Power Supplies
Power Switching Circuits
General Purpose
Packaging
JEDEC TO-220AC
Ordering Information
PART NUMBER PACKAGE BRAND
RHRP3040 TO-220AC RHRP3040
RHRP3060 TO-220AC RHRP3060
NOTE: When ordering, use the entire part number.
K
A
ANODE
CATHODE
CATHODE
(FLANGE)
Absolute Maximum Ratings
T
C
= 25
o
C, Unless Otherwise Specified
RHRP3040 RHRP3060 UNITS
Peak Repetitive Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RRM
400 600 V
Working Peak Reverse Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
RWM
400 600 V
DC Blocking Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . V
R
400 600 V
Average Rectified Forward Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .I
F(AV)
(T
C
= 120
o
C)
30 30 A
Repetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FRM
(Square Wave, 20kHz)
70 70 A
Nonrepetitive Peak Surge Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . I
FSM
(Halfwave, 1 Phase, 60Hz)
325 325 A
Maximum Power Dissipation . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . P
D
125 125 W
Avalanche Energy (See Figures 10 and 11) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . E
AVL
20 20 mJ
Operating and Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . T
STG
, T
J
-65 to 175 -65 to 175
o
C
Data Sheet January 2002
©2002 Fairchild Semiconductor Corporation RHRP3040, RHRP3060 Rev. B
Electrical Specifications
T
C
= 25
o
C, Unless Otherwise Specified
SYMBOL TEST CONDITION
RHRP3040 RHRP3060
UNITSMIN TYP MAX MIN TYP MAX
V
F
I
F
= 30A - - 2.1 - - 2.1 V
I
F
= 30A, T
C
= 150
o
C - - 1.7 - - 1.7 V
I
R
V
R
= 400V - - 250 - - -
µ
A
V
R
= 600V -----250
µ
A
V
R
= 400V, T
C
= 150
o
C - - 1.0 - - - mA
V
R
= 600V, T
C
= 150
o
C -----1.0mA
t
rr
I
F
= 1A, dI
F
/dt = 200A/
µ
s - -40- -40ns
I
F
= 30A, dI
F
/dt = 200A/
µ
s - -45- -45ns
t
a
I
F
= 30A, dI
F
/dt = 200A/
µ
s - 22 - - 22 - ns
t
b
I
F
= 30A, dI
F
/dt = 200A/
µ
s - 18 - - 18 - ns
Q
RR
I
F
= 30A, dI
F
/dt = 200A/
µ
s - 100 - - 100 - nC
C
J
V
R
= 10V, I
F
= 0A -85- -85- pF
R
θ
JC
- - 1.2 - - 1.2
o
C/W
DEFINITIONS
V
F
= Instantaneous forward voltage (pw = 300
µ
s, D = 2%).
I
R
= Instantaneous reverse current .
t
rr
= Reverse recovery time (See Figure 9), summation of t
a
+ t
b
.
t
a
= Time to reach peak reverse current (See Figure 9).
t
b
= Time from peak I
RM
to projected zero crossing of I
RM
based on a straight line from peak I
RM
through 25% of I
RM
(See Figure 9).
Q
RR
= Reverse recovery charge.
C
J
= Junction Capacitance.
R
θ
JC
= Thermal resistance junction to case.
pw = pulse width.
D = duty cycle.
Typical Performance Curves
FIGURE 1. FORWARD CURRENT vs FORWARD VOLTAGE FIGURE 2. REVERSE CURRENT vs REVERSE VOLTAGE
VF, FORWARD VOLTAGE (V)
IF, FORWARD CURRENT (A)
1
100
10
012
175oC
300
34
25oC
100oC
VR, REVERSE VOLTAGE (V)
0 200 400 600300 500
2000
0.01
0.1
100
10
IR, REVERSE CURRENT (µA)
100
100oC
175oC
1
25oC
RHRP3040, RHRP3060
©2002 Fairchild Semiconductor Corporation RHRP3040, RHRP3060 Rev. B
FIGURE 3. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 4. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT
FIGURE 5. t
rr
, t
a
AND t
b
CURVES vs FORWARD CURRENT FIGURE 6. CURRENT DERATING CURVE
FIGURE 7. JUNCTION CAPACITANCE vs REVERSE VOLTAGE
Typical Performance Curves
(Continued)
IF, FORWARD CURRENT (A)
1
0
20
10
30
30
50
t, RECOVERY TIMES (ns)
10
40
ta
tb
trr
TC = 25oC, dIF/dt = 200A/µs
IF, FORWARD CURRENT (A)
0
40
20
301
60
80
t, RECOVERY TIMES (ns)
10
100
ta
trr
tb
TC = 100oC, dIF/dt = 200A/µs
IF, FORWARD CURRENT (A)
0
50
25
30
1
100
75
t, RECOVERY TIMES (ns)
10
125
150
trr
ta
tb
TC = 175oC, dIF/dt = 200A/µs
30
5
0150100 175125
10
15
20
DC
TC, CASE TEMPERATURE (oC)
IF(AV), AVERAGE FORWARD CURRENT (A)
25
75
SQ. WAVE
VR, REVERSE VOLTAGE (V)
50
25
100
0 50 150 200
CJ, JUNCTION CAPACITANCE (pF)
150
75
125
0
100
RHRP3040, RHRP3060
©2002 Fairchild Semiconductor Corporation RHRP3040, RHRP3060 Rev. B
Test Circuits and Waveforms
FIGURE 8. t
rr
TEST CIRCUIT FIGURE 9. t
rr
WAVEFORMS AND DEFINITIONS
FIGURE 10. AVALANCHE ENERGY TEST CIRCUIT FIGURE 11. AVALANCHE CURRENT AND VOLTAGE
WAVEFORMS
RG
L
VDD
IGBT
CURRENT
SENSE
DUT
VGE
t1
t2
VGE AMPLITUDE AND
t1 AND t2 CONTROL IF
RG CONTROL dIF/dt
+
-
dt
dIF
IF
trr
tatb
0
IRM
0.25 IRM
DUT
CURRENT
SENSE
+
LR
VDD
R < 0.1
EAVL = 1/2LI2 [VR(AVL)/(VR(AVL) - VDD)]
Q1 = IGBT (BVCES > DUT VR(AVL))
-
VDD
Q1
IMAX = 1A
L = 40mH
IV
t0t1t2
IL
VAVL
t
IL
RHRP3040, RHRP3060
DISCLAIMER
FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER
NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD
DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT
OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT
RIGHTS, NOR THE RIGHTS OF OTHERS.
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The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is
not intended to be an exhaustive list of all such trademarks.
LIFE SUPPORT POLICY
FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT
DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION.
As used herein:
1. Life support devices or systems are devices or
systems which, (a) are intended for surgical implant into
the body, or (b) support or sustain life, or (c) whose
failure to perform when properly used in accordance
with instructions for use provided in the labeling, can be
reasonably expected to result in significant injury to the
user.
2. A critical component is any component of a life
support device or system whose failure to perform can
be reasonably expected to cause the failure of the life
support device or system, or to affect its safety or
effectiveness.
PRODUCT STATUS DEFINITIONS
Definition of Terms
Datasheet Identification Product Status Definition
Advance Information
Preliminary
No Identification Needed
Obsolete
This datasheet contains the design specifications for
product development. Specifications may change in
any manner without notice.
This datasheet contains preliminary data, and
supplementary data will be published at a later date.
Fairchild Semiconductor reserves the right to make
changes at any time without notice in order to improve
design.
This datasheet contains final specifications. Fairchild
Semiconductor reserves the right to make changes at
any time without notice in order to improve design.
This datasheet contains specifications on a product
that has been discontinued by Fairchild semiconductor.
The datasheet is printed for reference information only.
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In Design
First Production
Full Production
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