UNISONIC TECHNOLOGIES CO., LTD
BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR
www.unisonic.com.tw 1 of 3
Copyright © 2011 Unisonic Technologies Co., LTD QW-R204-013.Ca
PNP SILICON TRANSISTOR
DESCRIPTION
The UTC BD136/BD138/BD140 are silicon epitaxial planer PNP
transistor, designed for use as audio amplifiers and drivers utilizing
complementary or quasi complementary circuits.
The complementary NPN types are the BD135/BD137/ BD139.
1
TO-251
TO-126
1
ORDERING INFORMATION
Ordering Number Package Pin Assignment Packing
Lead Free Halogen Free 1 2 3
BD136L-x-T60-K BD136G-x-T60-K TO-126 E C B Bulk
BD138L-x-T60-K BD138G-x-T60-K TO-126 E C B Bulk
BD140L-x-T60-K BD140G-x-T60-K TO-126 E C B Bulk
BD136L-x-TM3-T BD136G-x-TM3-T TO-251 B C E Tube
BD138L-x-TM3-T BD138G-x-TM3-T TO-251 B C E Tube
BD140L-x-TM3-T BD140G-x-TM3-T TO-251 B C E Tube
Note: Pin Assignment: E: Emitter C: Collector B: Base
BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 2 of 3
www.unisonic.com.tw QW-R204-013.Ca
ABSOLUTE MAXIMUM RATING
PARAMETER SYMBOL RATINGS UNIT
Collector-Base Voltage
BD136
VCBO
-45
V BD138 -60
BD140 -80
Collector-Emitter Voltage
BD136
VCEO
-45
V BD138 -60
BD140 -80
Emitter-Base Voltage VEBO -5 V
Collector Current IC -1.5 V
Collector Peak Current ICM -3 A
Base Current IB -0.5 A
Power Dissipation TC≦25℃ TO-126 PD 12.5 W
TO-251 15
Junction Temperature TJ 150 ℃
Storage Temperature TSTG -40 ~ +150 ℃
Note 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. The device is guaranteed to meet performance specification within 0℃~70 ℃operating temperature range
and assured by design from –20℃~85℃.
THERMAL DATA
PARAMETER SYMBOL RATINGS UNIT
Junction to Ambient TO-126 θJA 100 ℃/W
TO-251 83
Junction to Case TO-126 θJC 10 ℃/W
TO-251 8.3
ELECTRICAL CHARACTERISTICS (TC=25℃,unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector-Emitter
Sustaining Voltage
BD136
VCEO(SUS) I
C =-30mA, IB=0 (Note)
-45
VBD138 -60
BD140 -80
Collector Cut-off Current ICBO VCB =-30 V, IE=0 -0.1 μA
VCB =-30 V, IE=0, TC = 125°C -10
Emitter Cut- off Current IEBO V
EB = -5 V, IC=0 -10 μA
DC Current Gain
hFE1 V
CE=-2V, IC =-5mA, 25
hFE2 V
CE=-2V, IC =-0.5A 25
hFE3 V
CE=-2V, IC =-150mA 40 250
Collector-Emitter Saturation Voltage VCE
(
SAT
)
I
C =-0.5A, IB = -0.05A (Note) -0.5 V
Base-Emitter Voltage VBE I
C =-0.5A, VCE =-2 V (Note) -1 V
Note: Pulsed: Pulse duration 300μs, duty cycle 1.5 %≦
CLASSIFICATION OF hFE3
RANK 6 10 16
RANGE 40~100 63~160 100~250
BD136-138-140 PNP EPITAXIAL SILICON TRANSISTOR
UNISONIC TECHNOLOGIES CO., LTD 3 of 3
www.unisonic.com.tw QW-R204-013.Ca
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
