V60100C-E3, VI60100C-E3, VB60100C-E3 www.vishay.com Vishay General Semiconductor Dual High Voltage TMBS(R) (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.36 V at IF = 5 A TO-220AB FEATURES TO-262AA K * Trench MOS Schottky technology * Low forward voltage drop, low power losses * High efficiency operation 2 3 1 1 V60100C 2 3 * Meets MSL level 1, per J-STD-020, LF maximum peak of 245 C (for TO-263AB package) * Low thermal resistance VI60100C PIN 1 PIN 2 PIN 1 PIN 2 PIN 3 CASE PIN 3 K * Solder bath temperature 275 C maximum, 10 s, per JESD 22-B106 (for TO-220AB and TO-262AA package) * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 D2PAK (TO-263AB) K TYPICAL APPLICATIONS For use in high frequency converters, switching power supplies, freewheeling diodes, OR-ing diode, DC/DC converters, and reverse battery protection. 2 1 VB60100C PIN 1 PIN 2 MECHANICAL DATA K Case: TO-220AB, D2PAK (TO-263AB), and TO-262AA HEATSINK Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS-compliant, commercial grade ADDITIONAL RESOURCES 3D 3D Terminals: matte tin plated leads, solderable J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test 3D Models per Polarity: as marked PRIMARY CHARACTERISTICS IF(AV) 2 x 30 A VRRM 100 V IFSM 320 A VF at IF = 30 A 0.66 V Mounting Torque: 10 in-lbs maximum TJ max. 150 C Package TO-220AB, TO-262AA, D2PAK (TO-263AB) Circuit configuration Common cathode MAXIMUM RATINGS (TA = 25 C unless otherwise noted) PARAMETER SYMBOL Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig. 1) VRRM per device per diode IF(AV) V60100C VI60100C 100 60 30 VB60100C UNIT V A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load per diode IFSM 320 A Non-repetitive avalanche energy at TJ = 25 C, L = 140 mH per diode EAS 450 mJ Peak repetitive reverse current at tp = 2 s, 1 kHz, TJ = 38 C 2 C per diode IRRM 1.0 A Voltage rate of change (rated VR) dV/dt 10 000 V/s TJ, TSTG -40 to +150 C Operating junction and storage temperature range Revision: 23-Sep-2019 Document Number: 88942 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60100C-E3, VI60100C-E3, VB60100C-E3 www.vishay.com Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER TEST CONDITIONS Breakdown voltage IR = 1.0 mA TYP. MAX. UNIT VBR 100 (minimum) - V TA = 25 C IF = 5 A 0.45 - IF = 10 A 0.52 - 0.58 0.63 IF = 15 A Instantaneous forward voltage per diode SYMBOL TA = 25 C IF = 20 A 0.63 - IF = 30 A 0.73 0.79 0.36 - VF (1) IF = 5 A IF = 10 A IF = 15 A TA = 125 C 0.45 - 0.53 0.58 V IF = 20 A 0.58 - IF = 30 A 0.66 0.70 TA = 25 C 24 500 A TA = 125 C 13 20 mA 65 1000 A 30 - mA VR = 80 V Reverse current at rated VR per diode VR = 100 V IR (2) TA = 25 C TA = 125 C Notes (1) Pulse test: 300 s pulse width, 1 % duty cycle (2) Pulse test: Pulse width 40 ms THERMAL CHARACTERISTICS (TA = 25 C unless otherwise noted) PARAMETER Typical thermal resistance per diode SYMBOL V60100C VI60100C VB60100C UNIT RJC 2.5 2.5 2.5 C/W ORDERING INFORMATION (Example) PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE Tube TO-220AB V60100C-E3/4W 1.89 4W 50/tube TO-263AB VB60100C-E3/4W 1.39 4W 50/tube Tube TO-263AB VB60100C-E3/8W 1.39 8W 800/tube Tape and reel TO-262AA VI60100C-E3/P 1.46 P 50/tube Tube Revision: 23-Sep-2019 Document Number: 88942 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60100C-E3, VI60100C-E3, VB60100C-E3 www.vishay.com Vishay General Semiconductor RATINGS AND CHARACTERISTICS CURVES (TA = 25 C unless otherwise noted) 1000 Instantaneous Reverse Current (mA) 70 Average Forward Current (A) Resistive or Inductive Load 60 50 40 30 20 10 100 TA = 150 C TA = 125 C 10 TA = 100 C 1 0.1 TA = 25 C 0.01 0.001 0 0 25 50 75 100 125 150 10 175 20 30 40 50 60 90 Fig. 1 - Forward Current Derating Curve Fig. 4 - Typical Reverse Characteristics Per Diode 100 10 000 TJ = 25 C f = 1.0 MHz Vsig = 50 mVp-p D = 0.8 Junction Capacitance (pF) D = 0.5 25 Average Power Loss (W) 80 Percent of Rated Peak Reverse Voltage (%) 30 D = 0.3 20 D = 1.0 D = 0.2 15 D = 0.1 T 10 5 D = tp/T 1000 tp 100 0 0 5 10 15 20 25 30 0.1 35 1 10 100 Average Forward Current (A) Reverse Voltage (V) Fig. 2 - Forward Power Loss Characteristics Per Diode Fig. 5 - Typical Junction Capacitance Per Diode 10 Transient Thermal Impedance (C/W) 100 Instantaneous Forward Current (A) 70 Case Temperature (C) TA = 150 C TA = 125 C 10 TA = 100 C 1 TA = 25 C 0.1 0 0.2 0.4 0.6 0.8 1 1 0.1 0.01 0.1 1 10 100 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode Fig. 6 - Typical Transient Thermal Impedance Per Diode Revision: 23-Sep-2019 Document Number: 88942 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60100C-E3, VI60100C-E3, VB60100C-E3 www.vishay.com Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) TO-220AB 0.415 (10.54) 0.380 (9.65) 0.185 (4.70) 0.175 (4.44) 0.161 (4.08) 0.139 (3.53) 0.055 (1.39) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 1 0.635 (16.13) 0.625 (15.87) PIN 2 3 0.160 (4.06) 0.140 (3.56) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 1.148 (29.16) 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.104 (2.65) 0.096 (2.45) 0.022 (0.56) 0.014 (0.36) 0.205 (5.20) 0.195 (4.95) TO-262AA 0.411 (10.45) 0.380 (9.65) 0.950 (24.13) 0.920 (23.37) 1 PIN 2 3 0.185 (4.70) 0.175 (4.44) 0.055 (1.40) 0.047 (1.19) 0.055 (1.40) 0.045 (1.14) 0.350 (8.89) 0.330 (8.38) 0.510 (12.95) 0.470 (11.94) 0.160 (4.06) 0.140 (3.56) 0.110 (2.79) 0.100 (2.54) 0.057 (1.45) 0.045 (1.14) 0.104 (2.65) 0.096 (2.45) 0.401 (10.19) 0.381 (9.68) 0.560 (14.22) 0.530 (13.46) 0.035 (0.90) 0.028 (0.70) 0.205 (5.20) 0.195 (4.95) 0.022 (0.56) 0.014 (0.35) Revision: 23-Sep-2019 Document Number: 88942 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 V60100C-E3, VI60100C-E3, VB60100C-E3 www.vishay.com Vishay General Semiconductor D2PAK (TO-263AB) 0.411 (10.45) 0.190 (4.83) 0.380 (9.65) 0.160 (4.06) Mounting Pad Layout 0.42 (10.66) MIN. 0.055 (1.40) 0.045 (1.14) 0.245 (6.22) MIN. K 0.33 (8.38) MIN. 0.055 (1.40) 0.360 (9.14) 0.624 (15.85) 0.320 (8.13) 12 K 0.047 (1.19) 0.670 (17.02) 0.591 (15.00) 0.591 (15.00) 0 to 0.01 (0 to 0.254) 0.110 (2.79) 0.037 (0.940) 0.090 (2.29) 0.027 (0.686) 0.105 (2.67) 0.021 (0.53) 0.014 (0.36) 0.095 (2.41) 0.15 (3.81) MIN. 0.08 (2.032) MI N. 0.205 (5.20) 0.140 (3.56) 0.105 (2.67) 0.195 (4.95) 0.110 (2.79) 0.095 (2.41) Revision: 23-Sep-2019 Document Number: 88942 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. 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