V60100C-E3, VI60100C-E3, VB60100C-E3
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Revision: 23-Sep-2019 1Document Number: 88942
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Dual High Voltage TMBS® (Trench MOS Barrier Schottky) Rectifier
Ultra Low VF = 0.36 V at IF = 5 A
ADDITIONAL RESOURCES
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 245 °C (for TO-263AB
package)
• Low thermal resistance
• Solder bath temperature 275 °C maximum, 10 s, per
JESD 22-B106 (for TO-220AB and TO-262AA package)
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency converters, switching power
supplies, freewheeling diodes, OR-ing diode, DC/DC
converters, and reverse battery protection.
MECHANICAL DATA
Case: TO-220AB, D2PAK (TO-263AB), and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-E3 - RoHS-compliant, commercial grade
Terminals: matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: as marked
Mounting Torque: 10 in-lbs maximum
PRIMARY CHARACTERISTICS
IF(AV) 2 x 30 A
VRRM 100 V
IFSM 320 A
VF at IF = 30 A 0.66 V
TJ max. 150 °C
Package TO-220AB, TO-262AA, D2PAK (TO-263AB)
Circuit configuration Common cathode
TO-220AB
V60100C 1
23
CASE
PIN 2
PIN 1
PIN 3
VB60100C
1
2
K
PIN 1
PIN 2
K
HEATSINK
D2PAK (TO-263AB)
1
K
23
TO-262AA
PIN 1 PIN 2
PIN 3 K
VI60100C
3
3
3
D
D
D
3
D
3D Models
MAXIMUM RATINGS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V60100C VI60100C VB60100C UNIT
Maximum repetitive peak reverse voltage VRRM 100 V
Maximum average forward rectified current (fig. 1) per device IF(AV)
60 A
per diode 30
Peak forward surge current 8.3 ms single half sine-wave superimposed
on rated load per diode IFSM 320 A
Non-repetitive avalanche energy at TJ = 25 °C, L = 140 mH per diode EAS 450 mJ
Peak repetitive reverse current at tp = 2 μs, 1 kHz, TJ = 38 °C ± 2 °C
per diode IRRM 1.0 A
Voltage rate of change (rated VR) dV/dt 10 000 V/μs
Operating junction and storage temperature range TJ, TSTG -40 to +150 °C
V60100C-E3, VI60100C-E3, VB60100C-E3
www.vishay.com Vishay General Semiconductor
Revision: 23-Sep-2019 2Document Number: 88942
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THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2) Pulse test: Pulse width 40 ms
ELECTRICAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Breakdown voltage IR = 1.0 mA TA = 25 °C VBR 100
(minimum) -V
Instantaneous forward voltage per diode
IF = 5 A
TA = 25 °C
VF (1)
0.45 -
V
IF = 10 A 0.52 -
IF = 15 A 0.58 0.63
IF = 20 A 0.63 -
IF = 30 A 0.73 0.79
IF = 5 A
TA = 125 °C
0.36 -
IF = 10 A 0.45 -
IF = 15 A 0.53 0.58
IF = 20 A 0.58 -
IF = 30 A 0.66 0.70
Reverse current at rated VR per diode
VR = 80 V TA = 25 °C
IR (2)
24 500 μA
TA = 125 °C 13 20 mA
VR = 100 V TA = 25 °C 65 1000 μA
TA = 125 °C 30 - mA
THERMAL CHARACTERISTICS (TA = 25 °C unless otherwise noted)
PARAMETER SYMBOL V60100C VI60100C VB60100C UNIT
Typical thermal resistance per diode RJC 2.5 2.5 2.5 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V60100C-E3/4W 1.89 4W 50/tube Tube
TO-263AB VB60100C-E3/4W 1.39 4W 50/tube Tube
TO-263AB VB60100C-E3/8W 1.39 8W 800/tube Tape and reel
TO-262AA VI60100C-E3/P 1.46 P 50/tube Tube
V60100C-E3, VI60100C-E3, VB60100C-E3
www.vishay.com Vishay General Semiconductor
Revision: 23-Sep-2019 3Document Number: 88942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics
Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics
Per Diode
Fig. 4 - Typical Reverse Characteristics
Per Diode
Fig. 5 - Typical Junction Capacitance
Per Diode
Fig. 6 - Typical Transient Thermal Impedance
Per Diode
Average Forward Current (A)
Case Temperature (°C)
60
50
40
30
20
10
0
0 25 50 75 100 125 150 175
Resistive or Inductive Load
70
D = 0.1
D = 0.3
D = 0.5
D = 0.8
D = 0.2
D = 1.0
0
0 5 10 15 20 25 30 35
5
10
15
20
25
30
Average Power Loss (W)
Average Forward Current (A)
D = t
p
/T t
p
T
TA = 150 °C
TA = 100 °C
TA = 25 °C
TA = 125 °C
Instantaneous Forward Current (A)
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.6 0.8 1
100
10
1
0.1
T
A
= 150 °C
T
A
= 125 °C
T
A
= 100 °C
T
A
= 25 °C
10 20 30 40 50 60 70 80 90 100
Percent of Rated Peak Reverse Voltage (%)
1000
100
10
1
0.001
0.1
0.01
Instantaneous Reverse Current (mA)
0.1 1 10 100
10 000
1000
100
Reverse Voltage (V)
T
J
= 25 °C
f = 1.0 MHz
V
sig
= 50 mVp-p
Junction Capacitance (pF)
0.01 0.1 1 10 100
10
1
0.1
Transient Thermal Impedance (°C/W)
t - Pulse Duration (s)
V60100C-E3, VI60100C-E3, VB60100C-E3
www.vishay.com Vishay General Semiconductor
Revision: 23-Sep-2019 4Document Number: 88942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
TO-220AB
0.113 (2.87)
0.103 (2.62)
0.415 (10.54)
0.380 (9.65)
0.635 (16.13)
0.625 (15.87)
PIN
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.104 (2.65)
0.096 (2.45) 0.205 (5.20)
0.195 (4.95)
0.035 (0.90)
0.028 (0.70)
0.161 (4.08)
0.139 (3.53)
13
2
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.350 (8.89)
0.330 (8.38)
1.148 (29.16)
1.118 (28.40)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.36)
0.110 (2.79)
0.100 (2.54)
0.603 (15.32)
0.573 (14.55)
TO-262AA
0.401 (10.19)
0.381 (9.68)
0.185 (4.70)
0.175 (4.44)
0.055 (1.40)
0.045 (1.14)
0.110 (2.79)
0.100 (2.54)
0.350 (8.89)
0.330 (8.38)
0.560 (14.22)
0.530 (13.46)
0.022 (0.56)
0.014 (0.35)
123
0.055 (1.40)
0.047 (1.19)
0.510 (12.95)
0.470 (11.94)
PIN
0.411 (10.45)
0.380 (9.65)
0.035 (0.90)
0.028 (0.70)
0.205 (5.20)
0.195 (4.95)
0.104 (2.65)
0.096 (2.45)
0.057 (1.45)
0.045 (1.14)
0.160 (4.06)
0.140 (3.56)
0.950 (24.13)
0.920 (23.37)
V60100C-E3, VI60100C-E3, VB60100C-E3
www.vishay.com Vishay General Semiconductor
Revision: 23-Sep-2019 5Document Number: 88942
For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 01-Jan-2021 1Document Number: 91000
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