63P1& &RRO026 3RZHU7UDQVLVWRU )HDWXUH VDS#Tjmax 9 5'6 RQ ,' $ * 1HZUHYROXWLRQDU\KLJKYROWDJHWHFKQRORJ\ *8OWUDORZJDWHFKDUJH 3G72 * 3HULRGLFDYDODQFKHUDWHG *([WUHPHGYGWUDWHG * 8OWUDORZHIIHFWLYHFDSDFLWDQFHV 7\SH 3DFNDJH 2UGHULQJ&RGH 0DUNLQJ 6331& 3G72 46 1& 0D[LPXP5DWLQJV 3DUDPHWHU 6\PERO &RQWLQXRXVGUDLQFXUUHQW ,' 9DOXH TC & TC & 3XOVHGGUDLQFXUUHQWtpOLPLWHGE\Tjmax , 'SXOV $YDODQFKHHQHUJ\VLQJOHSXOVH ($6 , ' $VDD 9 $YDODQFKHHQHUJ\UHSHWLWLYHW$5OLPLWHGE\Tjmax EAR , ' $VDD 9 8QLW $ P- $YDODQFKHFXUUHQWUHSHWLWLYHW$5OLPLWHGE\Tjmax , $5 Gate source voltage static VGS $ 9 *DWHVRXUFHYROWDJH$& I!+] VGS 3RZHUGLVVLSDWLRQ7 & & Ptot : 2SHUDWLQJDQGVWRUDJHWHPSHUDWXUH 7 M7 VWJ & Reverse diode dv/dt 6) dv/dt Rev. 2.8 3DJH 15 V/ns 2017-05-15 63P1& 0D[LPXP5DWLQJV 3DUDPHWHU 6\PERO 'UDLQ6RXUFHYROWDJHVORSH GYGW 9DOXH 8QLW 9QV 9DOXHV 8QLW V DS 9, ' $Tj & 7KHUPDO&KDUDFWHULVWLFV 3DUDPHWHU 6\PERO PLQ W\S PD[ 7KHUPDOUHVLVWDQFHMXQFWLRQFDVH RthJC 7KHUPDOUHVLVWDQFHMXQFWLRQDPELHQWOHDGHG RthJA 60'YHUVLRQGHYLFHRQ3&% 5WK-$ #PLQIRRWSULQW #FP FRROLQJDUHD 6ROGHULQJWHPSHUDWXUHwavesoldering 7VROG PP LQ IURPFDVHIRUV .: & (OHFWULFDO&KDUDFWHULVWLFVDW7M &XQOHVVRWKHUZLVHVSHFLILHG 3DUDPHWHU 6\PERO &RQGLWLRQV 'UDLQVRXUFHEUHDNGRZQYROWDJH V(BR)DSS V GS 9,' P$ 'UDLQ6RXUFHDYDODQFKH 9 %5 '6 V GS 9,' $ 9DOXHV 8QLW PLQ W\S PD[ 9 EUHDNGRZQYROWDJH *DWHWKUHVKROGYROWDJH 9*6 WK ,' VGS V DS =HURJDWHYROWDJHGUDLQFXUUHQW , '66 V DS 9VGS 9 Tj & Tj & V GS 9VDS 9 Q$ V GS 9,' $ Tj & Tj & I 0+]RSHQ'UDLQ *DWHVRXUFHOHDNDJHFXUUHQW , *66 'UDLQVRXUFHRQVWDWHUHVLVWDQFH 5'6 RQ *DWHLQSXWUHVLVWDQFH Rev. 2.8 RG 3DJH $ 20170515 63P1& (OHFWULFDO&KDUDFWHULVWLFVDWTj &XQOHVVRWKHUZLVHVSHFLILHG 3DUDPHWHU Transconductance 6\PERO g fs &RQGLWLRQV V DS , ' 5'6 RQ PD[ 9DOXHV 8QLW PLQ W\S PD[ 6 S) ,' $ Input capacitance Ciss V GS 9V DS 9 Output capacitance Coss f 0+] Reverse transfer capacitance Crss (IIHFWLYHRXWSXWFDSDFLWDQFH &R HU V GS 9 HQHUJ\UHODWHG V DS 9WR9 (IIHFWLYHRXWSXWFDSDFLWDQFH &R WU S) WLPHUHODWHG Turn-on delay time td(on) V DD 9V GS 9 Rise time tr ,' $RG Turn-off delay time td(off) Fall time tf QV *DWH&KDUJH&KDUDFWHULVWLFV Gate to source charge Qgs Gate to drain charge Qgd *DWHFKDUJHWRWDO 4J V DD 9,' $ V DD 9,' $ Q& V GS WR9 *DWHSODWHDXYROWDJH 9 SODWHDX V DD 9,' $ 9 5HSHWLWYHDYDODQFKHFDXVHVDGGLWLRQDOSRZHUORVVHVWKDWFDQEHFDOFXODWHGDV3 $9 EAR f 'HYLFHRQPP PP PPHSR[\3&%)5ZLWKFP RQHOD\HUPWKLFN FRSSHUDUHDIRUGUDLQ FRQQHFWLRQ3&%LVYHUWLFDOZLWKRXWEORZQDLU 6ROGHULQJWHPSHUDWXUHIRU72&UHIORZ & R HU LVDIL[HGFDSDFLWDQFHWKDWJLYHVWKHVDPHVWRUHGHQHUJ\DVCoss ZKLOHVDS LVULVLQJIURPWR9 '66 & LVDIL[HGFDSDFLWDQFHWKDWJLYHVWKHVDPHFKDUJLQJWLPHDVC ZKLOHV LVULVLQJIURPWR9 oss DS R WU '66 6I <=I , di/dt<=400A/us, V SD D DClink=400V, Vpeak<VBR, DSS, Tj<Tj,max. Identical low-side and high-side switch. Rev. 2.8 3DJH 20170515 63P1& (OHFWULFDO&KDUDFWHULVWLFVDWTj &XQOHVVRWKHUZLVHVSHFLILHG 3DUDPHWHU 6\PERO ,QYHUVHGLRGHFRQWLQXRXV ,6 &RQGLWLRQV TC & 9DOXHV 8QLW PLQ W\S PD[ $ IRUZDUGFXUUHQW Inverse diode direct current, I SM pulsed ,QYHUVHGLRGHIRUZDUGYROWDJH 96' VGS 9, ) ,6 9 Reverse recovery time t rr VR 9,) ,6 QV Reverse recovery charge Q rr diF/dt $V & Peak reverse recovery current I rrm $ 3HDNUDWHRIIDOORIUHYHUVH GL UUGW $V UHFRYHU\FXUUHQW 7\SLFDO7UDQVLHQW7KHUPDO&KDUDFWHULVWLFV 6\PERO 9DOXH 8QLW 6\PERO 9DOXH W\S 8QLW W\S 7KHUPDOUHVLVWDQFH 7KHUPDOFDSDFLWDQFH 5WK 5WK .: &WK &WK 5WK &WK 5WK &WK 5WK &WK 5WK &WK 7M 5 WK 5 WKQ 3 WRW W 7 FDVH :V. ( [WHUQDO+ HDWVLQN & WK & WK & WKQ 7 DP E Rev. 2.8 3DJH 20170515 63P1& 3RZHUGLVVLSDWLRQ 6DIHRSHUDWLQJDUHD 3WRW I TC ,' I 9 '6 SDUDPHWHU' T C & 6331& : $ ,' Ptot WS PV WS PV WS PV WS PV '& & 9 VDS TC 7UDQVLHQWWKHUPDOLPSHGDQFH 7\SRXWSXWFKDUDFWHULVWLF =WK-& I W S SDUDPHWHU' WS7 ,' I VDS Tj & SDUDPHWHUWS VVGS 9 9 9 9 $ .: ,' =WK-& ' ' ' ' ' ' VLQJOHSXOVH 9 9 9 9 Rev. 2.8 V tp 3DJH 9 9 VDS 20170515 63P1& 7\SRXWSXWFKDUDFWHULVWLF 7\SGUDLQVRXUFHRQUHVLVWDQFH ,' I VDS Tj & SDUDPHWHUWS VVGS 5'6 RQ f ,' SDUDPHWHUTj &V GS 9 9 9 9 9 ,' 9 9 9 9 9 5'6 RQ $ 9 9 9 9 9 9 9 9 9 VDS $ , ' 'UDLQVRXUFHRQVWDWHUHVLVWDQFH 7\SWUDQVIHUFKDUDFWHULVWLFV 5'6 RQ I 7M SDUDPHWHU,' $VGS 9 ,' I 9*6 9 '6[,'[5'6 RQ PD[ SDUDPHWHUWS V 6331& $ & ,' 5'6 RQ W\S & Tj Rev. 2.8 & 3DJH 9 VGS 20170515 63P1& 7\SJDWHFKDUJH )RUZDUGFKDUDFWHULVWLFVRIERG\GLRGH VGS I 4*DWH ,) I 96' SDUDPHWHU7MWS V SDUDPHWHU,' $SXOVHG 6331& 6331& 9 $ VDS max IF VGS VDS max 7M &W\S 7M &W\S 7M & 7M & Q& 9 4*DWH 96' 7\SGUDLQFXUUHQWVORSH 7\SVZLWFKLQJWLPH di/dt I R G LQGXFWLYHORDGTj & SDUVDS 9VGS 9,' $ W I RG LQGXFWLYHORDGT j & SDUV DS 9VGS 9,' $ QV $V GLGW RQ W di/dt WG RII WI WG RQ WU GLGW RII Rev. 2.8 RG 3DJH R G 20170515 63P1& 7\SVZLWFKLQJWLPH 7\SGUDLQVRXUFHYROWDJHVORSH W I ,' LQGXFWLYHORDGT j & SDUVDS 9VGS 9RG dv/dt I RG LQGXFWLYHORDGTj & SDUV DS 9VGS 9,' $ QV WGRII 9QV W dv/dt GYGW RQ WI WGRQ WU GYGW RII $ ,' R G 7\SVZLWFKLQJORVVHV 7\SVZLWFKLQJORVVHV ( I ,' LQGXFWLYHORDGTj & SDUVDS 9VGS 9RG ( I RG LQGXFWLYHORDGTj & SDUV DS 9VGS 9,' $ P:V P:V ( ( (RQ (RQ (RII (RII Rev. 2.8 $ ,' 3DJH R G 20170515 63P1& $YDODQFKH62$ $YDODQFKHHQHUJ\ ,$5 I W$5 SDUTj& ($6 I Tj SDU,' $VDD 9 $ P- 7M 67$57 & ($6 ,$5 7 M 67$57 & V W$5 & Tj 'UDLQVRXUFHEUHDNGRZQYROWDJH $YDODQFKHSRZHUORVVHV V(BR)DSS I Tj 3$5 I f SDUDPHWHUE AR P- 6331& : 3$5 V(BR)DSS 9 & +] f Tj Rev. 2.8 3DJH 20170515 63P1& 7\SFDSDFLWDQFHV 7\SCossVWRUHGHQHUJ\ & I VDS SDUDPHWHUV GS 9I 0+] (RVV f VDS S) (RVV & &LVV &RVV &UVV 9 VDS 9 VDS 'HILQLWLRQRIGLRGHVVZLWFKLQJFKDUDFWHULVWLFV Rev. 2.8 3DJH 20170515 SPP02N60C3 PG-TO220-3-1, PG-TO220-3-21 : Outline Rev. 2.8 Page 11 20170515 600VCoolMOSC3PowerTransistor SPP02N60C3 RevisionHistory SPP02N60C3 Revision:2017-05-18,Rev.2.8 Previous Revision Revision Date Subjects (major changes since last revision) 2.8 2017-05-18 typo correction in dv/dt diagram scaling TrademarksofInfineonTechnologiesAG AURIXTM,C166TM,CanPAKTM,CIPOSTM,CoolGaNTM,CoolMOSTM,CoolSETTM,CoolSiCTM,CORECONTROLTM,CROSSAVETM,DAVETM,DI-POLTM,DrBladeTM, EasyPIMTM,EconoBRIDGETM,EconoDUALTM,EconoPACKTM,EconoPIMTM,EiceDRIVERTM,eupecTM,FCOSTM,HITFETTM,HybridPACKTM,InfineonTM, ISOFACETM,IsoPACKTM,i-WaferTM,MIPAQTM,ModSTACKTM,my-dTM,NovalithICTM,OmniTuneTM,OPTIGATM,OptiMOSTM,ORIGATM,POWERCODETM, PRIMARIONTM,PrimePACKTM,PrimeSTACKTM,PROFETTM,PRO-SILTM,RASICTM,REAL3TM,ReverSaveTM,SatRICTM,SIEGETTM,SIPMOSTM,SmartLEWISTM, SOLIDFLASHTM,SPOCTM,TEMPFETTM,thinQTM,TRENCHSTOPTM,TriCoreTM. TrademarksupdatedAugust2015 OtherTrademarks Allreferencedproductorservicenamesandtrademarksarethepropertyoftheirrespectiveowners. WeListentoYourComments Anyinformationwithinthisdocumentthatyoufeeliswrong,unclearormissingatall?Yourfeedbackwillhelpustocontinuously improvethequalityofthisdocument.Pleasesendyourproposal(includingareferencetothisdocument)to: erratum@infineon.com Publishedby InfineonTechnologiesAG 81726Munchen,Germany (c)2017InfineonTechnologiesAG AllRightsReserved. LegalDisclaimer Theinformationgiveninthisdocumentshallinnoeventberegardedasaguaranteeofconditionsorcharacteristics ("Beschaffenheitsgarantie"). Withrespecttoanyexamples,hintsoranytypicalvaluesstatedhereinand/oranyinformationregardingtheapplicationofthe product,InfineonTechnologiesherebydisclaimsanyandallwarrantiesandliabilitiesofanykind,includingwithoutlimitation warrantiesofnon-infringementofintellectualpropertyrightsofanythirdparty. Inaddition,anyinformationgiveninthisdocumentissubjecttocustomer'scompliancewithitsobligationsstatedinthis documentandanyapplicablelegalrequirements,normsandstandardsconcerningcustomer'sproductsandanyuseofthe productofInfineonTechnologiesincustomer'sapplications. Thedatacontainedinthisdocumentisexclusivelyintendedfortechnicallytrainedstaff.Itistheresponsibilityofcustomer's technicaldepartmentstoevaluatethesuitabilityoftheproductfortheintendedapplicationandthecompletenessoftheproduct informationgiveninthisdocumentwithrespecttosuchapplication. Information Forfurtherinformationontechnology,deliverytermsandconditionsandpricespleasecontactyournearestInfineon TechnologiesOffice(www.infineon.com). Warnings Duetotechnicalrequirements,componentsmaycontaindangeroussubstances.Forinformationonthetypesinquestion, pleasecontactthenearestInfineonTechnologiesOffice. TheInfineonTechnologiescomponentdescribedinthisDataSheetmaybeusedinlife-supportdevicesorsystemsand/or automotive,aviationandaerospaceapplicationsorsystemsonlywiththeexpresswrittenapprovalofInfineonTechnologies,ifa failureofsuchcomponentscanreasonablybeexpectedtocausethefailureofthatlife-support,automotive,aviationand aerospacedeviceorsystemortoaffectthesafetyoreffectivenessofthatdeviceorsystem.Lifesupportdevicesorsystemsare intendedtobeimplantedinthehumanbodyortosupportand/ormaintainandsustainand/orprotecthumanlife.Iftheyfail,itis reasonabletoassumethatthehealthoftheuserorotherpersonsmaybeendangered. 12 Rev.2.8,2017-05-18