1. Product profile
1.1 General description
A 600 W LDMOS RF power transistor for broadca st transmitter app lications and industrial
applications. The excellent rug ged ness of th is d evice makes it ideal for dig ital and analog
transmitter applications.
[1] Measured at = 10 %; tp = 100 s.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3] PAR (of output signal) at 0.01 % probability on CCDF; PAR of input signal = 9.5 dB at 0.01 % probability on CCDF.
1.2 Features and benefits
Excellent ruggedness (VSWR 40 : 1 through all phases)
Optimum thermal behavior and reliability, Rth(j-c) = 0.15 K/W
High power gain
High efficiency
Designed for broadband operation (470 MHz to 860 MHz)
Internal input matching for high gain and optimum broadband operation
Excellent reliability
Easy power control
Compliant to Restriction of Hazardous Substances (RoHS) Directive 2002/95/EC
1.3 Applications
Communication transmitter applications in the UHF band
Industrial applications in the UHF band
BLF888A; BLF888AS
UHF power LDMOS transistor
Rev. 4 — 12 July 2013 Product data sheet
Table 1. Application information
RF performance at VDS = 50 V unless otherwise specified.
Mode of operation f PL(AV) PL(M) GpDIMD3 IMDshldr PAR
(MHz) (W) (W) (dB) (%) (dBc) (dBc) (dB)
RF performance in a comm on source 860 MHz narrowband test circuit
2-tone, class-AB f1 = 860; f2= 860.1 250 - 21 46 32 - -
pulsed, class-AB [1] 860 - 600 20 58 - - -
DVB-T (8k OFDM) 858 110 - 21 31 - 32 [2] 8.2 [3]
858 125 - 21 32.5 - 30 [2] 8.0 [3]
RF performance in a common source 470 MHz to 860 MHz broadband test circuit
DVB-T (8k OFDM) 858 110 - 20 30 - 32 [2] 8.0 [3]
858 120 - 20 31 - 31 [2] 7.8 [3]
BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 2 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
2. Pinning information
[1] Connected to flange.
3. Ordering information
4. Limiting values
Table 2. Pinning
Pin Description Simplified outline Graphic symbol
BLF888A (SOT539A)
1drain1
2drain2
3gate1
4gate2
5source [1]
BLF888AS (SOT539B)
1drain1
2drain2
3gate1
4gate2
5source [1]
5
12
43
4
35
1
2sym117
5
12
43
4
35
1
2sym117
Table 3. Ordering information
Type number Package
Name Description Version
BLF888A - flanged balanced LDMOST ceramic package;
2 mounting holes; 4 leads SOT539A
BLF888AS - earless flanged balanced LDMOST ceramic
package; 4 leads SOT539B
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage - 110 V
VGS gate-source voltage 0.5 +11 V
Tstg storage temperature 65 +150 C
Tjjunction temperature - 200 C
BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 3 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
5. Thermal characteristics
[1] Rth(j-c) is measured under RF conditions.
6. Characteristics
[1] ID is the drain current.
[2] Capacitance values without internal matching.
Table 5. Thermal characteristics
Symbol Parameter Conditions Typ Unit
Rth(j-c) thermal resistance from junction to case Tcase =80C; PL(AV) = 125 W [1] 0.15 K/W
Table 6. DC characteristics
Tj=25
C; per section unless otherwise specified.
Symbol Parameter Conditions Min Typ Max Unit
V(BR)DSS drain-source breakdown voltage VGS =0V; I
D= 2.4 mA [1] 110 - - V
VGS(th) gate-source threshold voltage VDS =10 V; I
D= 240 mA [1] 1.4 1.9 2.4 V
IDSS drain leakage current VGS =0V; V
DS =50V --2.8A
IDSX drain cut-off current VGS =V
GS(th) +3.75 V;
VDS =10V -36- A
IGSS gate leakage current VGS =10V; V
DS = 0 V - - 280 nA
RDS(on) drain-source on-state resistance VGS =V
GS(th) +3.75 V;
ID=8.5A [1] -143- m
Ciss input capacitance VGS = 0 V ; VDS =50V;
f=1MHz [2] -220- pF
Coss output capacitance VGS = 0 V; VDS =50V;
f=1MHz -74- pF
Crss reverse transfer capacitance VGS = 0 V ; VDS =50V;
f=1MHz -1.2- pF
Table 7. RF characteristics
RF characteristics in NXP production narrow band test circuit; Tcase =25
C unless otherwise
specified.
Symbol Parameter Conditions Min Typ Max Unit
2-Tone, class-AB
VDS drain-source voltage - 50 - V
IDq quiescent drain current [1] -1.3- A
PL(AV) avera ge output power f1= 860 MHz;
f2=860.1MHz 250 - - W
Gppower gain f1= 860 MHz;
f2=860.1MHz 20 21 - dB
Ddrain efficiency f1= 860 MHz;
f2=860.1MHz 42 46 - %
IMD3 third-order intermodulation distortion f1= 860 MHz;
f2=860.1MHz -32 28 dBc
BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 4 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
[1] IDq for total device.
[2] Measured [dBc] with delta marker at 4.3 MHz from center frequency.
[3] PAR (of output signal) at 0.01 % probability on CCDF; P AR of input signal = 9.5 dB at 0.01 % probability on
CCDF.
6.1 Ruggedness in class-AB operation
The BLF888A and BLF 888AS are capable of withst anding a load mismatch corresponding
to VSWR 40 : 1 through all phases under the following conditions: VDS =50V;
f = 860 MHz at rated power.
DVB-T (8k OFDM), class-AB
VDS drain-source voltage - 50 - V
IDq quiescent drain current [1] -1.3- A
PL(AV) avera ge output power f = 858 MHz 110 - - W
Gppower gain f = 858 MHz 20 21 - dB
Ddrain efficiency f = 858 MHz 28 31 - %
IMDshldr intermodulation distortion shoulder f = 858 MHz [2] -32 28 dBc
PAR peak-to-average ratio f = 858 MHz [3] -8.2- dB
VGS = 0 V; f = 1 MHz.
Fig 1. Output capacitance as a fun ction of drain-source voltage; typical values per
section
Table 7. RF characteristics …continued
RF characteristics in NXP production narrow band test circuit; Tcase =25
C unless otherwise
specified.
Symbol Parameter Conditions Min Typ Max Unit
001aam579
VDS (V)
0604020
200
100
300
400
Coss
(pF)
0
BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 5 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
7. Application information
7.1 Narrowband RF figures
7.1.1 2-Tone
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit. VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 2. 2-Tone power gain and drain efficiency as
function of load power; typical values Fig 3. 2 -Tone power gain and third order
intermodulation distorti on a s load power;
typical values
PL(AV) (W)
0 500400200 300100
001aan761
16
20
24
Gp
(dB)
ηD
(%)
12
20
40
60
0
Gp
ηD
PL(AV) (W)
0 500400200 300100
001aan762
16
20
24
Gp
(dB)
IMD3
(dBc)
12
-40
-20
0
-60
Gp
IMD3
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Product data sheet Rev. 4 — 12 July 2013 6 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
7.1.2 DVB-T
7.2 Broadband RF figures
7.2.1 DVB-T
VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit. VDS = 50 V; IDq = 1.3 A; measured in a common source
narrowband 860 MHz test circuit.
Fig 4. DVB-T power gain and inte rmo du la t io n
distortion shoulder as function of load power;
typical valu e s
Fig 5. DVB-T peak-to-average ratio and drain
efficiency as function of load power;
typical values
PL(AV) (W)
0 100 200 300 35025015050
001aam582
16
20
24
Gp
(dB)
12
18
22
14
IMDshldr
(dBc)
−40
−20
0
−60
−30
−10
−50
Gp
IMDshldr
PL(AV) (W)
0 100 200 300 35025015050
001aam583
4
8
12
PAR
(dB)
0
6
10
2
ηD
(%)
20
40
60
0
30
50
10
PAR
ηD
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
PL(AV) = 110 W; VDS = 50 V; IDq = 1.3 A; measured in a
common source broadband test circuit as described in
Section 8.
Fig 6. DVB-T power gain and inte rmo du la t io n
distortion shoulder as a function of frequency;
typical valu e s
Fig 7. DVB-T peak-to-average ratio and drain
efficiency as function of frequency;
typical values
f (MHz)
400 900800600 700500
001aam585
16
12
20
24
Gp
(dB) IMDshldr
(dBc)
8
−30
−40
−20
−10
−50
Gp
IMDshldr
f (MHz)
400 900800600 700500
001aam584
7.5
6.5
8.5
9.5
PAR
(dB) ηD
(%)
5.5
30
20
40
50
10
ηD
PAR
BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 7 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
7.3 Impedance information
Fig 8. Definition of transistor imp e da nce
Table 8. Typical push-pull impedance
Simulated Zi and ZL device impedance; impedance info at VDS = 50 V and PL(AV) = 110 W (DVB-T).
f ZiZL
MHz
300 0.617 j1.715 4.989 + j1.365
325 0.635 j1.355 4.867 + j1.424
350 0.655 j1.026 4.741 + j1.472
375 0.677 j0.721 4.614 + j1.511
400 0.702 j0.435 4.486 + j1.540
425 0.731 j0.164 4.357 + j1.559
450 0.762 + j0.096 4.228 + j1.570
475 0.798 + j0.347 4.100 + j1.573
500 0.839 + j0.592 4.974 + j1.567
525 0.884 + j0.833 3.850 + j1.554
550 0.936 + j1.072 3.728 + j1.534
575 0.995 + j1.310 3.608 + j1.508
600 1.063 + j1.549 3.492 + j1.475
625 1.141 + j1.791 3.378 + j1.437
650 1.230 + j2.037 3.268 + j1.394
675 1.334 + j2.289 3.161 + j1.347
700 1.456 + j2.548 3.057 + j1.295
725 1.599 + j2.814 2.957 + j1.239
750 1.768 + j3.090 2.860 + j1.180
775 1.971 + j3.376 2.676 + j1.118
800 2.214 + j3.671 2.677 + j1.053
825 2.510 + j3.975 2.591 + j0.985
850 2.873 + j4.282 2.508 + j0.915
875 3.320 + j4.584 2.428 + j0.843
900 3.875 + j4.865 2.351 + j0.770
925 4.562 + j5.095 2.277 + j0.695
950 5.409 + j5.223 2.206 + j0.618
975 6.426 + j5.166 2.138 + j0.540
1000 7.587 + j4.807 2.073 + j0.461
001aan207
gate 1
gate 2
drain 2
drain 1
ZiZL
BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 8 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
7.4 Reliability
TTF (0.1 % failure fraction).
The reliability at pulsed conditions can be calculated as follows: TTF (0.1 %) 1 / .
(1) Tj = 100 C
(2) Tj = 110 C
(3) Tj = 120 C
(4) Tj = 130 C
(5) Tj = 140 C
(6) Tj = 150 C
(7) Tj = 160 C
(8) Tj = 170 C
(9) Tj = 180 C
(10) Tj = 190 C
(11) Tj = 200 C
Fig 9. BLF888A; BLF888AS electromigration (IDS(DC), total device)
001aam586
Years
103
10
102
106
105
104
107
1
IDS(DC) (A)
0 201684122 1810614
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
(10)
(11)
BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 9 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
8. Test information
[1] American technical ceramics type 800R or capacitor of same quality.
[2] American technical ceramics type 800B or capacitor of same quality.
[3] American technical ceramics type 180R or capacitor of same quality.
[4] American technical ceramics type 100A or capacitor of same quality.
[5] Printed-Circuit Board (PCB): Taconic RF35; r = 3.5 F/m; height = 0.762 mm; Cu (top/bottom metallization);
thickness copper plating = 35 m.
Table 9. List of componen ts
For test circuit, see Figure 10, Figure 11 and Figure 12.
Component Description Value Remarks
B1, B2 semi rigid coax 25 ; 49.5 mm UT-090C-25 (EZ 90-25)
C1 multilayer ceramic chip capacitor 12 pF [1]
C2, C3, C4, C5,
C6 multilayer ceramic chip capacitor 8.2 pF [1]
C7 multilayer ceramic chip capacitor 6.8 pF [2]
C8 multilayer ceramic chip capacitor 2.7 pF [2]
C9 multilayer ceramic chip capacitor 2.2 pF [2]
C10, C13, C14 multilayer ceramic chip capacitor 100 pF [3]
C11, C12 multilayer ceramic chip capacitor 10 pF [2]
C15, C16 multilayer ceramic chip capacitor 4.7 F, 50 V Kemet C1210X475K5RAC-TU or
capacitor of same quality.
C17, C18, C23,
C24 multilayer ceramic chip capacitor 100 pF [2]
C19, C20 multilayer ceramic chip capacitor 10 F, 50 V TDK C570X7R1H106 KT000N or
capacitor of same quality.
C21, C22 electrolytic capa citor 470 F; 63 V
C30 multilayer ceramic chip capacitor 10 pF [4]
C31 multilayer ceramic chip capacitor 9.1 pF [4]
C32 multilayer ceramic chip capacitor 3.9 pF [4]
C33, C34, C35 multilayer ceramic chip capacitor 100 pF [4]
C36, C37 multilayer ceramic chip capacitor 4.7 F, 50 V TDK C4532X7R1E475MT020 U or
capacitor of same quality.
L1 microstrip - [5] (W L) 15 mm 13 mm
L2 microstrip - [5] (W L) 5 mm 26 mm
L3, L32 microstrip - [5] (W L) 2 mm 49.5 mm
L4 microstrip - [5] (W L) 1.7 mm 3.5 mm
L5 microstrip - [5] (W L) 2 mm 9.5 mm
L30 microstrip - [5] (W L) 5 mm 13 mm
L31 microstrip - [5] (W L) 2 mm 11 mm
L33 microstrip - [5] (W L) 2 mm 3mm
R1, R2 wire resistor 10
R3, R4 SMD resistor 5.6 0805
R5, R6 wire resistor 100
R7, R8 potentiometer 10 k
xxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxx x x x xxxxxxxxxxxxxxxxxxxxxxxxxxxxxx xxxxxxxxxxxxxxxxxxx xx xx xxxxx
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BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 10 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
See Table 9 for a list of components.
Fig 10. Class-AB common sourc e broadband amplifier; VD1(test), VD2(test), VG1(test) and VG2(test) are d rain and gate test voltages
+VG1(test)
+VD1(test)
+VD2(test)
C32
C31 C30
C19
C20
C15
C10 50 Ω
50 Ω L4
C21
C22
C13
C16
C14
C9C7C6C4
C8C5
C3
C2
C1
+VG2(test)
L30 L1
L2
R1
L5
L31
C34
C36
C33
C37
L33
C35
L3
B1
R3
L32
B2
R4
R6
R8
R5
R7
C11
C12
C17
R2
C18
001aan763
C23
C24
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Product data sheet Rev. 4 — 12 July 2013 11 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
See Table 9 for a list of components.
Fig 11. Printed-Circuit Board (PCB) for class-AB commo n source amplifier
50 mm
001aam588
105 mm
L33
L32
L32
L31
L30
L30
L1
L5
L5
L1
L2
L2
L3
L3
L4
L31
See Table 9 for a list of components.
Fig 12. Component layo ut for class-AB common source amplifier
-
+
-
+
6.3 mm
4 mm
+VG2(test) +VD2(test)
+VD1(test)
+VG1(test)
001aan764
R8
R7
R6
C37
C35
C34 C32 C30
C31
C36
C17
C19
C11
C12
C7 C9
C8
C1
C2
C3
C4
C5
C6
C21
C23
C24
C22
C20
C18
R2
C15
C13
C14
C16
R1
C33
50 Ω
C10
50 Ω
R4
R3
R5
49.6 mm
36.8 mm
26.3 mm
25.3 mm
44 mm
BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 12 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
9. Package outline
Fig 13. Package outline SOT539A
REFERENCES
OUTLINE
VERSION EUROPEAN
PROJECTION ISSUE DATE
IEC JEDEC EIAJ
SOT539A 12-05-02
10-02-02
0 5 10 mm
scale
p
A
F
b
e
D
U2
L
H
Q
c
5
12
43
D1
E
A
w1AB
M M M
q
U1
H1
C
B
M M
w2C
E1
M
w3
UNIT A
mm
Db
11.81
11.56
0.18
0.10
31.55
30.94 13.72 9.53
9.27
17.12
16.10
10.29
10.03
4.7
4.2
ce U2
0.250.25 0.51
w3
35.56
qw
2
w1
F
1.75
1.50
U1
41.28
41.02
H1
25.53
25.27
p
3.30
3.05
Q
2.26
2.01
EE
1
9.50
9.30
inches 0.465
0.455
0.007
0.004
1.242
1.218
D1
31.52
30.96
1.241
1.219 0.540 0.375
0.365
0.674
0.634
0.405
0.395
0.185
0.165 0.0100.010 0.0201.400
0.069
0.059
1.625
1.615
1.005
0.995
0.130
0.120
0.089
0.079
0.374
0.366
H
3.48
2.97
0.137
0.117
L
DIMENSIONS (millimetre dimensions are derived from the original inch dimensions)
Flanged balanced ceramic package; 2 mounting holes; 4 leads SOT539A
Note
1. millimeter dimensions are derived from the original inch dimensions.
2. recommended screw pitch dimension of 1.52 inch (38.6 mm) based on M3 screw.
BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 13 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
Fig 14. Package outline SOT539B
References
Outline
version
European
projection Issue date
IEC JEDEC JEITA
SOT539B
sot539b_po
12-05-02
13-05-24
Unit(1)
mm
max
nom
min
4.7
4.2
11.81
11.56
31.55
30.94
31.52
30.96
9.5
9.3
9.53
9.27
1.75
1.50
17.12
16.10
3.48
2.97
10.29
10.03
0.25
A
Dimensions
Earless flanged balanced ceramic package; 4 leads SOT539B
bc
0.18
0.10
DD
1EE
1e
13.72
FHH
1
25.53
25.27
LQ
2.26
2.01
U1
32.39
32.13
U2w2
0.25
inches
max
nom
min
0.185
0.165
0.465
0.455
1.242
1.218
1.241
1.219
0.374
0.366
0.375
0.365
0.069
0.059
0.674
0.634
0.137
0.117
0.405
0.395
0.01
0.007
0.004
0.54
1.005
0.995
0.089
0.079
1.275
1.265
0.01
w3
0 5 10 mm
scale
c
E
Q
E1
e
H
L
b
H1
U1
U2
Dw2
w3
1 2
3 4
D
D
A
F
D1
5
Note
1. millimeter dimensions are derived from the original inch dimensions.
BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 14 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
10. Handling information
11. Abbreviations
12. Revision history
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Observe precautions for handling
electrostatic sensitive devices.
Such precautions are described in the ANSI/ESD S20.20, IEC/ST 61340-5, JESD625-A or
equivalent standards.
Table 10. Abbreviations
Acronym Description
CCDF Complementary Cumulative Distribution Function
DVB Digital Video Broadcast
DVB-T Digital Video Broadcast - Terrestrial
LDMOS Laterally Diffused Metal-Oxide Semiconductor
LDMOST Laterally Diffused Metal-Oxide Semiconductor Transistor
OFDM Orthogonal Frequency Division Multiplexing
PAR Peak-to-Average power Ratio
RF Radio Frequency
SMD Surface Mounted Device
UHF Ultra High Frequency
VSWR Voltage Standing-Wave Ratio
Table 11. Revision history
Document ID Release date Data sheet status Change notice Supersedes
BLF888A_BLF888AS v.4 20130712 Product data sheet - BLF888A_BLF888AS v.3
Modifications: •The package outline Figure 14 is updated.
•Translation disclaimer adde d to the legal text.
BLF888A_BLF888AS v.3 20110830 Product data sheet - BLF888A_BLF888AS v.2
Modifications: •The status of this document has been changed to Product data sheet.
•Table 7 on page 3: The values in the Conditions column for VDS and IDq have been
removed.
BLF888A_BLF888AS v.2 20110301 Preliminary data sheet - BLF888A_BLF888AS v.1
BLF888A_BLF888AS v.1 20100921 Objective data sheet - -
BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 15 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
13. Legal information
13.1 Data sheet status
[1] Please consult the most recently issued document before initiating or completing a design.
[2] The term ‘short data sheet’ is explained in section “Definitions”.
[3] The product status of de vice(s) descr ibed in th is docume nt may have cha nged since this docume nt was publis hed and ma y dif fer in case of multiple devices. The latest product status
information is available on the Internet at URL http://www.nxp.com.
13.2 Definitions
Draft — The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
information included herein and shall have no liab ility for the consequences of
use of such information.
Short data sheet — A short data sheet is an extract from a full data sheet
with the same product type number(s) and tit le. A short data sh eet is intended
for quick reference only and shou ld not be rel ied u pon to cont ain det ailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the shor t data sheet, the
full data sheet shall pre vail.
Product specification — The information and data provided in a Product
data sheet shall define the specification of the product as agreed between
NXP Semiconductors and its customer, unless NXP Semiconductors and
customer have explicitly agreed otherwise in writing. In no event however,
shall an agreement be valid in which the NXP Semiconductors product is
deemed to off er functions and qualities beyond those described in the
Product data sheet.
13.3 Disclaimers
Limited warr a nty and liability — Information in this document is believed to
be accurate and reliable. However, NXP Semiconductors doe s not give any
representations or warranties, expressed or implied, as to the accuracy or
completeness of such information and shall have no liability for the
consequences of use of such information. NXP Se miconductors takes no
responsibility for the content in this document if provided by an inf ormation
source outside of NXP Semiconductors.
In no event shall NXP Semiconductors be liable for any indirect, incidental,
punitive, special or consequ ential damages (including - wit hout limitatio n - lost
profits, lost savings, business interruption, costs related to the removal or
replacement of any products or rework charges) whether or not such
damages are based on tort (including negligence), warranty, breach of
contract or any other legal theory.
Notwithstanding any damages that customer might incur for any reason
whatsoever, NXP Semiconductors’ aggreg ate and cumulative l iability towards
customer for the products described herein shall be limited in accordance
with the Terms and conditions of commercial sale of NXP Semiconductors.
Right to make changes — NXP Semiconductors reserves the right to make
changes to information published in this document, including without
limitation specifications and product descriptions, at any time and without
notice. This document supersedes and replaces all informa tion supplied prior
to the publication hereof .
Suitability for use — NXP Semiconductors products are not designed,
authorized or warranted to be suitable for use in life support, life-critical or
safety-critical systems or equipment, nor in applications where failure or
malfunction of an NXP Semiconductors product can reasonably be expected
to result in perso nal injury, death or seve re property or environmental
damage. NXP Semiconductors and its suppliers accept no liability for
inclusion and/or use of NXP Semiconducto rs products in such equipment or
applications and ther efore such inclu sion and/or use is at the cu stomer’s own
risk.
Applications — Applications that are described herein for any of these
products are for illustrative purposes only. NXP Semiconductors makes no
representation or warranty tha t such application s will be suitable for the
specified use without further testing or modification.
Customers are responsible for the design and ope ration of their applications
and products using NXP Semiconductors product s, and NXP Semiconductors
accepts no liability for any assistance with applications or cu stomer product
design. It is customer’s sole responsibility to determine whether the NXP
Semiconductors product is suit able and fit for the custome r’s applications and
products planned, as well as fo r the planned application and use of
customer’s third party customer(s). Customers should provide appropriate
design and operating safeguards to minimize the risks associated with their
applications and products.
NXP Semiconductors does not accept any liability related to any default,
damage, costs or problem which is based on any weakness or default in the
customer’s applications or products, or the application or use by custo m er’s
third party customer(s). Customer is responsible for doing all necessary
testing for th e customer’s applications and products using NXP
Semiconductors products in order to avoid a default of the applications and
the products or of the application or use by customer’s third party
customer(s). NXP does not accept any liability in this respect.
Limiting values — Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) will cause permanent
damage to the device. Limiting values are stress ratings only and (proper)
operation of the device at these or any other conditions above those given in
the Recommended operating conditions section (if present) or the
Characteristics sections of this document is not warranted. Constant or
repeated exposure to limiting values will permanent ly and irreversibly affect
the quality and reliability of the device.
Terms and conditions of commercial sale — NXP Semicon ductors
products are sold subject to the general terms and conditions of commercial
sale, as published at http://www.nxp.com/profile/terms, unless otherwise
agreed in a valid written individua l agreement. In case an individual
agreement is concluded only the ter ms and conditions of the respective
agreement shall apply. NXP Semiconductors hereby expressly objects to
applying the customer’s general terms and conditions with regard to the
purchase of NXP Semiconductors products by customer.
No offer to sell or license — Nothing i n this document may be interpreted or
construed as an of fer t o sell product s that is open for accept ance or t he grant,
conveyance or implication of any license under any copyrights, patents or
other industrial or intellectual property rights.
Document status[1][2] Product status[3] Definition
Objective [short] data sheet Development This document contains data from the objective specification for product development.
Preliminary [short] dat a sheet Qualification This document contains data from the preliminar y specification.
Product [short] dat a sheet Production This document contains the product specification.
BLF888A_BLF888AS All information provided in this document is subject to legal disclaimers. © NXP B.V. 2013. All rights reserved.
Product data sheet Rev. 4 — 12 July 2013 16 of 17
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
Export control — This document as well as the item(s) described herein
may be subject to export control regulations. Export might require a prior
authorization from competent authorities.
Non-automotive qualified products — Unless this data sheet expressly
states that this specific NXP Semiconductors product is automotive qualified,
the product is not suitable for automo tive use. It is neither qua lif ied nor test ed
in accordance with automotive testing or application requirements. NXP
Semiconductors accepts no liability for inclusion and/or use of
non-automotive qualified products in automotive equipment or applications.
In the event that customer uses the product for design-in and use in
automotive applications to automot ive specifications and standard s, customer
(a) shall use the product without NXP Semiconductors’ warranty of the
product for such automotive applicat ions, use and specifications, and (b)
whenever customer uses the product for automotive applications beyond
NXP Semiconductors’ specifications such use shall be solely at customer’s
own risk, and (c) customer fully indemnifies NXP Semiconductors for any
liability, damage s or failed product claims resulting from customer design and
use of the product for automotive appl ications beyond NXP Semiconductors’
standard warrant y and NXP Semiconductors’ product specifications.
Translations — A non-English (translated) version of a document is for
reference only. The English version shall prevail in case of any discrepancy
between the translated and English versions.
13.4 Licenses
13.5 Trademarks
Notice: All referenced b rands, produc t names, service names and trademarks
are the property of their respect i ve ow ners.
14. Contact information
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
ICs with DVB-T or DVB-T2 functionality
Use of this product in any manner that complies with the DVB-T or the
DVB-T2 standard may require licenses under applicable patents of the
DVB-T respectively the DVB-T2 p atent portfolio, which license is available
from Sisvel S.p.A., Via Sestriere 100, 10060 None (TO), Italy, and under
applicable pate nts of other parties.
NXP Semiconductors BLF888A; BLF888AS
UHF power LDMOS transistor
© NXP B.V. 2013. All rights reserved.
For more information, please visit: http://www.nxp.co m
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 12 July 2013
Document identifier: BLF888A_BLF888AS
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
1.1 General description . . . . . . . . . . . . . . . . . . . . . 1
1.2 Features and benefits. . . . . . . . . . . . . . . . . . . . 1
1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
2 Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
3 Ordering information. . . . . . . . . . . . . . . . . . . . . 2
4 Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
5 Thermal characteristics . . . . . . . . . . . . . . . . . . 3
6 Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 3
6.1 Ruggedness in class-AB operation . . . . . . . . . 4
7 Application information. . . . . . . . . . . . . . . . . . . 5
7.1 Narrowband RF figures . . . . . . . . . . . . . . . . . . 5
7.1.1 2-Tone. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5
7.1.2 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.2 Broadband RF figures . . . . . . . . . . . . . . . . . . . 6
7.2.1 DVB-T. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6
7.3 Impedance information. . . . . . . . . . . . . . . . . . . 7
7.4 Reliability . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8
8 Te st information. . . . . . . . . . . . . . . . . . . . . . . . . 9
9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12
10 Handling information. . . . . . . . . . . . . . . . . . . . 14
11 Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 14
12 Revision history. . . . . . . . . . . . . . . . . . . . . . . . 14
13 Legal information. . . . . . . . . . . . . . . . . . . . . . . 15
13.1 Data sheet status . . . . . . . . . . . . . . . . . . . . . . 15
13.2 Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.3 Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 15
13.4 Licenses . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16
13.5 Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 16
14 Contact information. . . . . . . . . . . . . . . . . . . . . 16
15 Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
