TPCA8024
2010-01-05
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (U-MOSⅣ)
TPCA8024
Lithium-Ion Battery Applications
Notebook PC Applications
Portable Equipment Applications
• Small footprint due to a small and thin package
• Low drain-source ON-resistance: RDS (ON) = 3.5 mΩ (typ.)
• High forward transfer admittance: |Yfs| = 72 S (typ.)
• Low leakage current: IDSS = 10 μA (max) (VDS = 30 V)
• Enhancement mode: Vth = 1.3 to 2.5 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics Symbol Rating Unit
Drain-source voltage VDSS 30 V
Drain-gate voltage (RGS = 20 kΩ) VDGR 30 V
Gate-source voltage VGSS ±20 V
DC (Note 1) ID 35
Drain current
Pulse (Note 1) IDP 105
A
Drain power dissipation (Tc=25℃) PD 35 W
Drain power dissipation (t = 10 s)
(Note 2a)
PD 2.8 W
Drain power dissipation (t = 10 s)
(Note 2b)
PD 1.6 W
Single pulse avalanche energy
(Note 3) EAS 159 mJ
Avalanche current IAR 35 A
Repetitive avalanche energy
(Tc=25℃) (Note 4) EAR 3.5 mJ
Channel temperature Tch 150 °C
Storage temperature range Tstg -55 to 150 °C
Note: For Note 1 to 4, refer to the next page.
Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability
test report and estimated failure rate, etc).
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
8 5
1 4
0.6 ± 0.1
4.25 ± 0.2
0.8 ± 0.1 3.5 ± 0.2 1.1 ± 0.2 0.166 ± 0.05
0.95 ± 0.05
5.0 ± 0.2
S
S
0.05
A
0.595
0.4 ± 0.1
6.0 ± 0.3
5.0 ± 0.2
14
0.15 ± 0.05
8
5
1.27
A
0.05 M
JEDEC ―
JEITA ―
TOSHIBA 2-5Q1A
Weight: 0.069 g (typ.)
Circuit Configuration
8 6
1 2 3
7 5
4
1,2,3: SOURCE 4: GATE
5,6,7,8: DRAIN
TPCA8024
2010-01-05
2
Thermal Characteristics
Characteristics Symbol Max Unit
Thermal resistance, channel to case
(Tc=25℃) Rth (ch-c) 3.57 °C/W
Thermal resistance, channel to ambient
(t = 10 s) (Note 2a) Rth (ch-a) 44.6 °C/W
Thermal resistance, channel to ambient
(t = 10 s) (Note 2b) Rth (ch-a) 78.1 °C/W
Marking (Note 5)
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2:
(a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b)
Note 3: VDD = 24 V, Tch = 25°C (initial), L = 0.1mH, RG = 25 Ω, IAR = 35 A
Note 4: Repetitive rating: pulse width limited by max channel temperature
Note 5:
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
(b)
FR-4
25.4 × 25.4 × 0.8
(Unit: mm)
* Weekly code: (Three digits)
Week of manufacture
(01 for the first week of the year, continuing up to 52 or 53)
Year of manufacture
(The last digit of the year)
※
TypeTPCA
8024
(a)
TPCA8024
2010-01-05
3
Electrical Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Gate leakage current IGSS V
GS = ±20 V, VDS = 0 V ⎯ ⎯ ±100 nA
Drain cut-OFF current IDSS V
DS = 30 V, VGS = 0 V ⎯ ⎯ 10 μA
V (BR) DSS ID = 10 mA, VGS = 0 V 30 ⎯ ⎯
Drain-source breakdown voltage
V (BR) DSX ID = 10 mA, VGS = −20 V 10 ⎯ ⎯
V
Gate threshold voltage Vth V
DS = 10 V, ID = 1 mA 1.3 ⎯ 2.5 V
VGS = 4.5 V, ID = 17 A ⎯ 5.4 7.8
Drain-source ON-resistance RDS (ON)
VGS = 10 V, ID = 17 A ⎯ 3.5 4.3
mΩ
Forward transfer admittance |Yfs| VDS = 10 V, ID = 17 A 36 72 ⎯ S
Input capacitance Ciss ⎯ 1800 ⎯
Reverse transfer capacitance Crss ⎯ 370 ⎯
Output capacitance Coss
VDS = 10 V, VGS = 0 V, f = 1 MHz
⎯ 570 ⎯
pF
Rise time tr ⎯ 11 ⎯
Turn-on time ton ⎯ 19 ⎯
Fall time tf ⎯ 22 ⎯
Switching time
Turn-off time toff
Duty ≤ 1%, tw = 10 μs ⎯ 64 ⎯
ns
Total gate charge
(gate-source plus gate-drain) Qg ⎯ 45 ⎯
Gate-source charge 1 Qgs1 ⎯ 8 ⎯
Gate-drain (“miller”) charge Qgd
VDD ≈ 24 V, VGS = 10 V,
ID = 35 A
⎯ 15 ⎯
nC
Source-Drain Ratings and Characteristics (Ta = 25°C)
Characteristics Symbol Test Condition Min Typ. Max Unit
Drain reverse current Pulse (Note 1) IDRP ⎯ ⎯ ⎯ 105 A
Forward voltage (diode) VDSF I
DR = 35 A, VGS = 0 V ⎯ ⎯ −1.2 V
RL = 0.88 Ω
VDD
≈
15 V
0 V
VGS 10 V
4.7 Ω
ID = 17 A
VOUT
TPCA8024
2010-01-05
4
100
VGS = 10 V
4.5
1
100
10
0.1 1 10 100
Ta = −55°C
25
100
0.1 1 10
0.1
1
10
100
1000
17
ID = 35 A
8.5
0246 8 10
0
0.08
0.16
0.24
0.32
0.4
Ta = −55°C 100
25
1 3 4 6
0
20
40
60
80
100
0 2 5
4 5
0
20
40
60
80
100
3.4
VGS = 2.8 V
10
3.2
4
3.6
0123
3.8
8
5
6
4.5
3
3.4
VGS = 2.6 V
8
2.8
0 0.2 0.4 0.6 0.8 1
3
0
10
20
30
40
50
3.2
6
10
5
4.5
3.6
3.8
4
ID – VDS
ID – VDS
ID – VGS
VDS – VGS
|Yfs| – ID
RDS (ON) – ID
Common source
Ta = 25°C
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
VDS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
VDS = 10 V
Pulse test
Common source
Ta = 25°C
Pulse test
Forward transfer admittance
|Yfs| (S)
Drain−source voltage VDS (V)
Drain−source voltage VDS (V)
Drain current ID (A)
Drain-source voltage VDS (V)
Drain current ID (A)
Gate−source voltage VGS (V)
Drain current ID (A)
Gate
−
source voltage VGS (V)
Drain current ID (A) Drain current ID (A)
Drain−source ON resistance
RDS (ON) (mΩ)
TPCA8024
2010-01-05
5
50 7060
VDS
VGS
VDD =12 V
24
0 30
16
20
0
10
20
40
8
10 20
6
0
30
50
12
4
40
80 160120
3
−80 −40 0 40
0
2
0.5
1
1.5
2.5
Ciss
Coss
Crss
1000
10000
10
0.1 1 10 100
100
10 4.5 3
VGS = 0 V
1
0−0.2 −0.4 −0.6 −0.8
0.1
100
−1
1
10
1000
−1.2
VGS = 4.5 V
ID = 8.5,17,35 A
ID = 8.5,17,35 A
0
2
4
6
10
−80 −40 0 40 80 120 160
VGS = 10 V
8
RDS (ON) – Ta
IDR – VDS
Vth – Ta
Common source
Pulse test
Common source
Ta = 25°C
Pulse test
Common source
VGS = 0 V
f = 1 MHz
Ta = 25°C
Common source
VDS = 10 V
ID = 1mA
Pulse test
Common source
ID = 35 A
Ta = 25°C
Pulse test
Ambient temperature Ta (°C)
Drain-source ON-resistance
RDS (ON) (mΩ)
Drain
−
source voltage VDS (V)
Drain reverse current IDR (A)
Drain−source voltage VDS (V)
Capacitance – VDS
Capacitance C (pF)
Ambient temperature Ta (°C)
Gate threshold voltage Vth (V)
Gate−source voltage VGS (V)
Total gate charge Qg (nC)
Dynamic input/output
characteristics
Drain−source voltage VDS (V)
TPCA8024
2010-01-05
6
100
t = 10 ms *
1 ms *
0.1 1 10 100
0.1
1
1000
VDSS max
10
0 40 80 160120
40
0
10
20
30
(1)
(2)
0
0.5
1
1.5
2
0 40 80 160120
2.5
3
0.1
0.001 0.01 0.1 1 10 100 1000
1
10
100
1000
(2)
(1)
(3)
(1) Device mounted on a glass-epoxy board (a) (Note 2a)
(2) Device mounted on a glass-epoxy board (b) (Note 2b)
(3) Tc=25℃
rth − tw
Single pulse
Pulse width tw (s)
Transient thermal impedance
r
th (°C/W)
Case temperature Tc (°C)
PD – Tc
Drain power dissipation PD (W)
ID max (continuous)
DC operation
Ta = 25 °C
Drain−source voltage VDS (V)
Drain current ID (A)
Safe operating area
ID max (Pulse) *
* Single pulse
Ta = 25°C
Curves must be derated
linearly with increase in
temperature.
PD – Ta
Ambient temperature Ta (°C)
Drain power dissipation PD (W)
(1) Device mounted on a
glass-epoxy board (a) (Note 2a)
(2) Device mounted on a
glass-epoxy board (b) (Note 2b)
t = 10 s
TPCA8024
2010-01-05
7
RESTRICTIONS ON PRODUCT USE
• Toshiba Corporation, and its subsidiaries and affiliates (collectively “TOSHIBA”), reserve the right to make changes to the information
in this document, and related hardware, software and systems (collectively “Product”) without notice.
• This document and any information herein may not be reproduced without prior written permission from TOSHIBA. Even with
TOSHIBA’s written permission, reproduction is permissible only if reproduction is without alteration/omission.
• Though TOSHIBA works continually to improve Product’s quality and reliability, Product can malfunction or fail. Customers are
responsible for complying with safety standards and for providing adequate designs and safeguards for their hardware, software and
systems which minimize risk and avoid situations in which a malfunction or failure of Product could cause loss of human life, bodily
injury or damage to property, including data loss or corruption. Before customers use the Product, create designs including the
Product, or incorporate the Product into their own applications, customers must also refer to and comply with (a) the latest versions of
all relevant TOSHIBA information, including without limitation, this document, the specifications, the data sheets and application notes
for Product and the precautions and conditions set forth in the “TOSHIBA Semiconductor Reliability Handbook” and (b) the
instructions for the application with which the Product will be used with or for. Customers are solely responsible for all aspects of their
own product design or applications, including but not limited to (a) determining the appropriateness of the use of this Product in such
design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts,
diagrams, programs, algorithms, sample application circuits, or any other referenced documents; and (c) validating all operating
parameters for such designs and applications. TOSHIBA ASSUMES NO LIABILITY FOR CUSTOMERS’ PRODUCT DESIGN OR
APPLICATIONS.
• Product is intended for use in general electronics applications (e.g., computers, personal equipment, office equipment, measuring
equipment, industrial robots and home electronics appliances) or for specific applications as expressly stated in this document.
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FOR PRODUCT, AND TO THE MAXIMUM EXTENT ALLOWABLE BY LAW, TOSHIBA (1) ASSUMES NO LIABILITY
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including without limitation, the EU RoHS Directive. TOSHIBA assumes no liability for damages or losses occurring as a result of
noncompliance with applicable laws and regulations.
