DPG30C300PC
Low Loss and Soft Recovery
High Performance Fast Recovery Diode
Common Cathode
HiPerFRED²
1 4 3
Part number
DPG30C300PC
Backside: cathode
FAV
rr
tns35
RRM
15
300
=
V= V
I= A
2x
Features / Ad vantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very short recovery time
● Improved thermal behaviour
● Very low Irm-values
● Very soft recovery behaviour
● Avalanche voltage rated for reliable operation
● Soft reverse recovery for low EMI/RFI
● Low Irm reduces:
- Power dissipation within the diode
- Turn-on loss in the commutating switch
● Antiparallel diode for high frequency
switching devices
● Antisaturation diode
● Snubber diode
● Free wheeling diode
● Rectifiers in switch mode power
supplies (SMPS)
● Uninterruptible power supplies (UPS)
TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG30C300PC
n
s
3
A
T
VJ
=°C
reverse recovery time
A
6.5
35
55
n
s
I
RM
max. reverse recovery current
I
F
=A;15
25
T=125°C
VJ
-di
F
=A/µs200/dtt
rr
V
R
=V200
T
VJ
=°C25
T=125°C
VJ
V = V
Symbol Definition
Ratings
typ. max.
I
R
V
I
A
V
F
1.26
R1.7 K/
W
R
min.
15
V
RSM
V
1T = 25°C
VJ
T = °C
VJ
m
A
0.08V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
145
P
tot
90
W
T = 25°C
C
RK/
W
15
300
max. non-repetitive reverse blocking voltage
reverse current, drain current
forward voltage drop
total power dissipation
Conditions Uni
t
1.51
T = 25°C
VJ
150
V
F0
V
0.69T = °C
VJ
175
r
F
18 m
Ω
V
1.01T = °C
VJ
I = A
F
V
15
1.29
I = A
F
30
I = A
F
30
threshold voltage
slope resistance for power loss calculation only
µ
A
150
V
RRM
V
300
max. re pe titive rev er se blockin g volt a ge T = 25°C
VJ
C
J
20
j
unction capacitance V = V150 T = 25°Cf = 1 MHz
RVJ
p
F
I
FSM
t = 10 ms; (50 Hz), sine; T = 45°C
VJ
max. forward surge current V = 0 V
R
T = °C
VJ
175
240
A
300
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Fast Diode
300
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG30C300PC
Ratings
Product M
a
r
k
i
n
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
Zyyww
000000
Assembly Line
D
P
G
30
C
300
PC
Part number
Diode
HiPerFRED
extreme fast
Common Cathode
TO-263AB (D2Pak) (2)
=
=
=
DPG30C300HB TO-247AD (3) 300
Current Rating [A]
Reverse Voltage [V]
=
=
=
=
Package
T
op
°C
T
VJ
°C175
virt ua l j un ctio n temp eratu re -55
Weight g2
Symbol Definition typ. max.min.Conditions
operation temperature
Unit
F
C
N60
mount ing for ce w i th cli p 20
I
RMS
RMS current 35 A
per terminal
150-55
TO-263
(
D2Pak
)
Similar Part Package Voltage class
DPG30C300PB TO-220AB (3) 300
Delivery Mode Quantity Code No.Part Number Marking on ProductOrdering
DPG30C300PC 501901Tape & Reel 800DPG30C300PCStandard
T
stg
°C150
storage temperature -55
threshold voltage V0.69
mΩ
V
0 max
R
0 max
slope resistance * 14.7
Equivalent Circuits for Simulation
T =
VJ
IV
0
R
0
Fast
Diode
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG30C300PC
W
c2
A
A1
c
L
E
2x e
L1
D
321
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
10.92
(0.430)
9.02
(0.355)
mm (Inches)
Recommended min. foot print
3x b2
E1
2x b
H
D1
Supplier
Option
L2
4
minmaxminmax
A 4.06 4.83 0.160 0.190
A1
A2
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
e1
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
Wtyp.
0.02 0.040 typ.
0.0008 0.002
Dim. Millimeter Inches
typ. 0.10 typ. 0.004
2.41 0.095
0.098
4.28 0.169
All dimensions conform with
and/or within JEDEC standard.
2,54 BSC 0,100 BSC
2.5
1 4 3
Outlines TO-263 (D2Pak)
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DPG30C300PC
100 300 5000 200 400 600
20
30
40
50
60
70
0 20 40 60 80 100 120 140 160
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
Kf
TVJ [°C]
0 100 200 300 400 500 600
0
2
4
6
8
10
12
14
16
0
100
200
300
400
V
FR
[V]
0 100 200 300 400 500 600
0
2
4
6
8
10
12
14
16
0 100 200 300 400 500 600
0.0
0.1
0.2
0.3
0.4
0.5
0.0 0.5 1.0 1.5 2.0 2.5
0
10
20
30
40
50
60
70
80
I
RM
[A]
Q
rr
[μC]
I
F
[A]
V
F
id-]V[
F
/dt [A/μs]
t
rr
[ns]
V
FR
t
fr
I
RM
Q
rr
7.5 A
-di
F
/dt [A/μs]
-di
F
/dt [A/μs]
7.5 A
15 A
I
F
= 30 A
-di
F
/dt [A/μs]
t
fr
[ns]
1 10 100 1000 10000
0.6
0.8
1.0
1.2
1.4
1.6
1.8
t[ms]
Z
thJC
[K/W]
0 100 200 300 400 500 600
0
4
8
12
16
Erec
[μJ]
-diF/dt [A/μs]
30 A
15 A
Fig. 1 Forward current
I
F
versus V
F
Fig. 2 Typ. reverse recovery charge
Q
rr
versus -di
F
/dt
Fig. 3 Typ. peak reverse current
I
RM
versus -di
F
/dt
Fig. 4 Dynamic parameters
Qrr,I
RM versus TVJ
Fig. 5 Typ. recovery time
t
rr
versus -di
F
/dt
Fig. 6 Typ. peak forward voltage
V
FR
and t
fr
versus di
F
/dt
Fig. 7 Typ. recovery energy
Erec versus -diF/dt
Fig. 8 Transient thermal resistance junction to case
T
VJ
= 25°C
150°C
I
F
=30 A
I
F
=15 A
I
F
=7.5A
I
F
=30A
I
F
=15A
I
F
=7.5 A
T
VJ
= 125°C
V
R
=200 V
T
VJ
=125°C
V
R
= 200 V
T
VJ
= 125°C
V
R
= 200 V T
VJ
= 125°C
I
F
=15 A
V
R
= 200 V
T
VJ
=125°C
V
R
= 200 V
Fast Diode
IXYS reserves the right to change limits, conditions and dimensions. 20131126aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
