WARP2 SERIES IGBT WITH
ULTRAFAST SOFT RECOVERY DIODE
IRGP50B60PD1-EP
08/06/08
Features
•NPT Technology, Positive Temperature Coefficient
•Lower VCE(SAT)
•Lower Parasitic Capacitances
•Minimal Tail Current
•HEXFRED Ultra Fast Soft-Recovery Co-Pack Diode
•Tighter Distribution of Parameters
•Higher Reliability
Benefits
•Parallel Operation for Higher Current Applications
•Lower Conduction Losses and Switching Losses
•Higher Switching Frequency up to 150kHz
E
G
n-channel
C
VCES = 600V
VCE(on) typ. = 2.00V
@ VGE = 15V IC = 33A
Equivalent MOSFET
Parameters
RCE(on) typ. = 61mΩ
ID (FET equivalent) = 50A
Applications
•Telecom and Server SMPS
•PFC and ZVS SMPS Circuits
•Uninterruptable Power Supplies
•Consumer Electronics Power Supplies
SMPS IGBT
Absolute Maximum Ratings
Parameter Max. Units
VCES Collector-to-Emitter Voltage 600 V
IC @ TC = 25°C Continuous Collector Current 75
IC @ TC = 100°C Continuous Collector Current 45
ICM Pulse Collector Current (Ref. Fig. C.T.4) 150
ILM Clamped Inductive Load Current
d
150 A
IF @ TC = 25°C Diode Continous Forward Current 40
IF @ TC = 100°C Diode Continous Forward Current 15
IFRM Maximum Repetitive Forward Current
e
60
VGE Gate-to-Emitter Voltage ±20 V
PD @ TC = 25°C Maximum Power Dissipation 390 W
PD @ TC = 100°C Maximum Power Dissipation 156
TJOperating Junction and -55 to +150
TSTG Storage Temperature Range °C
Soldering Temperature for 10 sec. 300 (0.063 in. (1.6mm) from case)
Mounting Torque, 6-32 or M3 Screw 10 lbf·in (1.1 N·m)
Thermal Resistance
Parameter Min. Typ. Max. Units
RθJC (IGBT) Thermal Resistance Junction-to-Case-(each IGBT) ––– ––– 0.32 °C/W
RθJC (Diode) Thermal Resistance Junction-to-Case-(each Diode) ––– ––– 1.7
RθCS Thermal Resistance, Case-to-Sink (flat, greased surface) ––– 0.24 –––
RθJA Thermal Resistance, Junction-to-Ambient (typical socket mount) ––– ––– 40
Weight ––– 6.0 (0.21) ––– g (oz)
•Lead-Free
TO-247AD
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PD - 96170
IRGP50B60PD1-EP
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Notes:
RCE(on) typ. = equivalent on-resistance = VCE(on) typ./ IC, where VCE(on) typ.= 2.00V and IC =33A. ID (FET Equivalent) is the equivalent MOSFET ID
rating @ 25°C for applications up to 150kHz. These are provided for comparison purposes (only) with equivalent MOSFET solutions.
VCC = 80% (VCES), VGE = 15V, L = 28 µH, RG = 22 Ω.
Pulse width limited by max. junction temperature.
Energy losses include "tail" and diode reverse recovery, Data generated with use of Diode 30ETH06.
Coes eff. is a fixed capacitance that gives the same charging time as Coes while VCE is rising from 0 to 80% VCES.
Coes eff.(ER) is a fixed capacitance that stores the same energy as Coes while VCE is rising from 0 to 80% VCES.
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions Ref.Fig
V(BR)CES Collector-to-Emitter Breakdown Voltage 600 — — V VGE = 0V, IC = 500µA
∆V(BR)CES/∆TJTemperature Coeff. of Breakdown Voltage —0.31—V/°C
VGE = 0V, IC = 1mA (25°C-125°C)
RG Internal Gate Resistance — 1.7 — Ω1MHz, Open Collector
—2.002.35 IC = 33A, VGE = 15V 4, 5,6,8,9
VCE(on) Collector-to-Emitter Saturation Voltage — 2.45 2.85 V IC = 50A, VGE = 15V
—2.602.95 IC = 33A, VGE = 15V, TJ = 125°C
—3.203.60 IC = 50A, VGE = 15V, TJ = 125°C
VGE(th) Gate Threshold Voltage 3.0 4.0 5.0 V IC = 250µA 7,8,9
∆VGE(th)/∆TJ Threshold Voltage temp. coefficient — -10 — mV/°C VCE = VGE, IC = 1.0mA
gfe Forward Transconductance — 41 — S VCE = 50V, IC = 33A, PW = 80µs
ICES Collector-to-Emitter Leakage Current — 5.0 500 µA VGE = 0V, VCE = 600V
—1.0—mA
VGE = 0V, VCE = 600V, TJ = 125°C
VFM Diode Forward Voltage Drop — 1.30 1.70 V IF = 15A, VGE = 0V 10
—1.201.60 IF = 15A, VGE = 0V, TJ = 125°C
IGES Gate-to-Emitter Leakage Current — — ±100 nA VGE = ±20V, VCE = 0V
Switching Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Ref.Fig
Qg Total Gate Charge (turn-on) — 205 308 IC = 33A 17
Qgc Gate-to-Collector Charge (turn-on) — 70 105 nC VCC = 400V CT1
Qge Gate-to-Emitter Charge (turn-on) — 30 45 VGE = 15V
Eon Turn-On Switching Loss — 255 305 IC = 33A, VCC = 390V CT3
Eoff Turn-Off Switching Loss — 375 445 µJ VGE = +15V, RG = 3.3Ω, L = 200µH
Etotal Total Switching Loss — 630 750 TJ = 25°C
f
td(on) Turn-On delay time — 30 40 IC = 33A, VCC = 390V CT3
trRise time — 10 15 ns VGE = +15V, RG = 3.3Ω, L = 200µH
td(off) Turn-Off delay time — 130 150 TJ = 25°C
f
tfFall time — 11 15
Eon Turn-On Switching Loss — 580 700 IC = 33A, VCC = 390V CT3
Eoff Turn-Off Switching Loss — 480 550 µJ VGE = +15V, RG = 3.3Ω, L = 200µH 11,13
Etotal Total Switching Loss — 1060 1250 TJ = 125°C
f
WF1,WF2
td(on) Turn-On delay time — 26 35 IC = 33A, VCC = 390V CT3
trRise time — 13 20 ns VGE = +15V, RG = 3.3Ω, L = 200µH 12,14
td(off) Turn-Off delay time — 146 165 TJ = 125°C
f
WF1,WF2
tfFall time — 15 20
Cies Input Capacitance — 3648 — VGE = 0V 16
Coes Output Capacitance — 322 — VCC = 30V
Cres Reverse Transfer Capacitance — 56 — pF f = 1Mhz
Coes eff. Effective Output Capacitance (Time Related)
g
—215— VGE = 0V, VCE = 0V to 480V 15
Coes eff. (ER) Effective Output Capacitance (Ener
gy
Related)
g
—163—
TJ = 150°C, IC = 150A 3
RBSOA Reverse Bias Safe Operating Area FULL SQUARE VCC = 480V, Vp =600V CT2
Rg = 22Ω, VGE = +15V to 0V
trr Diode Reverse Recovery Time — 42 60 ns TJ = 25°C IF = 15A, VR = 200V, 19
—74120 TJ = 125°C di/dt = 200A/µs
Qrr Diode Reverse Recovery Charge — 80 180 nC TJ = 25°C IF = 15A, VR = 200V, 21
— 220 600 TJ = 125°C di/dt = 200A/µs
Irr Peak Reverse Recovery Current — 4.0 6.0 A TJ = 25°C IF = 15A, VR = 200V, 19,20,21,22
—6.510 TJ = 125°C di/dt = 200A/µs CT5
Conditions
IRGP50B60PD1-EP
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Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Fig. 2 - Power Dissipation vs. Case
Temperature
Fig. 3 - Reverse Bias SOA
TJ = 150°C; VGE =15V
Fig. 4 - Typ. IGBT Output Characteristics
TJ = -40°C; tp = 80µs
Fig. 5 - Typ. IGBT Output Characteristics
TJ = 25°C; tp = 80µs
Fig. 6 - Typ. IGBT Output Characteristics
TJ = 125°C; tp = 80µs
0 20 40 60 80 100 120 140 160
TC (°C)
0
50
100
150
200
250
300
350
400
450
Ptot (W)
10 100 1000
VCE (V)
1
10
100
1000
IC A)
012345678910
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
012345678910
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
012345678910
VCE (V)
0
20
40
60
80
100
120
140
160
180
200
ICE (A)
VGE = 15V
VGE = 12V
VGE = 10V
VGE = 8.0V
VGE = 6.0V
0 20 40 60 80 100 120 140 160
TC (°C)
0
10
20
30
40
50
60
70
80
90
IC (A)
IRGP50B60PD1-EP
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Fig. 8 - Typical VCE vs. VGE
TJ = 25°C
Fig. 9 - Typical VCE vs. VGE
TJ = 125°C
Fig. 12 - Typ. Switching Time vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 11 - Typ. Energy Loss vs. IC
TJ = 125°C; L = 200µH; VCE = 390V, RG = 3.3Ω; VGE = 15V.
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 10 - Typ. Diode Forward Characteristics
tp = 80µs
Fig. 7 - Typ. Transfer Characteristics
VCE = 50V; tp = 10µs
0 5 10 15 20
VGE (V)
1
2
3
4
5
6
7
8
9
10
VCE (V)
ICE = 15A
ICE = 33A
ICE = 50A
0 5 10 15 20
VGE (V)
1
2
3
4
5
6
7
8
9
10
VCE (V)
ICE = 15A
ICE = 33A
ICE = 50A
0 102030405060
IC (A)
0
200
400
600
800
1000
1200
Energy (µJ)
EOFF
EON
010 20 30 40 50 60
IC (A)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0 5 10 15 20
VGE (V)
0
100
200
300
400
500
600
700
800
900
ICE (A)
TJ = 25°C
TJ = 125°C
TJ = 125°C
TJ = 25°C
1
10
100
0.8 1.2 1.6 2.0 2.4
FM
F
I nstant aneous Forward Current - I (A)
Forward Voltage Drop - V (V)
T = 150°C
T = 125°C
T = 25°C
J
J
J
IRGP50B60PD1-EP
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Fig. 14 - Typ. Switching Time vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 13 - Typ. Energy Loss vs. RG
TJ = 125°C; L = 200µH; VCE = 390V, ICE = 33A; VGE = 15V
Diode clamp used: 30ETH06 (See C.T.3)
Fig. 16- Typ. Capacitance vs. VCE
VGE= 0V; f = 1MHz
Fig. 15- Typ. Output Capacitance
Stored Energy vs. VCE
Fig. 17 - Typical Gate Charge vs. VGE
ICE = 33A
0 5 10 15 20 25
RG (Ω)
300
400
500
600
700
800
900
1000
Energy (µJ)
EON
EOFF
0 5 10 15 20 25
RG (Ω)
10
100
1000
Swiching Time (ns)
tR
tdOFF
tF
tdON
0 50 100 150 200 250
Q G, Total Gate Charge (nC)
0
2
4
6
8
10
12
14
16
VGE (V)
400V
020 40 60 80 100
VCE (V)
10
100
1000
10000
Capacitance (pF)
Cies
Coes
Cres
0 100 200 300 400 500 600 700
VCE (V)
0
10
20
30
40
Eoes (µJ)
Fig. 18 - Normalized Typ. VCE(on)
vs. Junction Temperature
IC = 33A, VGE= 15V
-50 0 50 100 150 200
TJ (°C)
0.8
1.0
1.2
1.4
Normalized VCE(on) (V)
IRGP50B60PD1-EP
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Fig. 20 - Typical Recovery Current vs. dif/dt
Fig. 19 - Typical Reverse Recovery vs. dif/dt
Fig. 21 - Typical Stored Charge vs. dif/dt Fig. 22 - Typical di(rec)M/dt vs. dif/dt,
20
40
60
80
100
100 1000
f
di /dt - (A/µs)
t - (ns)
rr
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
1
10
100
100 1000
f
di /dt - (A/µs)
I - (A)
IRRM
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
0
200
400
600
800
100 1000
f
di /dt - (A/µs)
RR
Q - (nC)
I = 30A
I = 15A
I = 5.0A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
100
1000
100 1000
f
di /dt - (A/µs)
di(rec)M/dt - (A/µs)
I = 5.0A
I = 15A
I = 30A
F
F
F
V = 200V
T = 125°C
T = 25°C
R
J
J
IRGP50B60PD1-EP
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Fig. 24. Maximum Transient Thermal Impedance, Junction-to-Case (DIODE)
Fig 23. Maximum Transient Thermal Impedance, Junction-to-Case (IGBT)
1E-006 1E-005 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
0.001
0.01
0.1
1
10
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.363 0.000112
0.864 0.001184
0.473 0.032264
τJ
τJ
τ1
τ1
τ2
τ2τ3
τ3
R1
R1R2
R2R3
R3
τ
τC
Ci i/Ri
Ci= τi/Ri
1E-006 1E-005 0.0001 0.001 0.01 0.1 110
t1 , Rectangular Pulse Duration (sec)
0.0001
0.001
0.01
0.1
1
Thermal Response ( Z thJC )
0.20
0.10
D = 0.50
0.02
0.01
0.05
SINGLE PULSE
( THERMAL RESPONSE ) Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
Ri (°C/W) τi (sec)
0.157 0.000346
0.163 4.28
τJ
τJ
τ1
τ1
τ2
τ2
R1
R1R2
R2
τ
τC
Ci i/Ri
Ci= τi/Ri
IRGP50B60PD1-EP
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Fig.C.T.1 - Gate Charge Circuit (turn-off) Fig.C.T.2 - RBSOA Circuit
L
Rg
80 V DUT
480V
1K
VCC
DU T
0
L
Fig.C.T.4 - Resistive Load Circuit
Rg
VCC
DUT
R =
V
CC
I
CM
Fig.C.T.3 - Switching Loss Circuit
Fig. C.T.5 - Reverse Recovery Parameter
Test Circuit
REVERSE RECOVERY CIRCUIT
IRFP250
D.U.T.
L = 70µH
V = 200V
R
0.01
Ω
G
D
S
dif/dt
ADJUST
PFC diode L
Rg
VCC
DUT /
DRIVER
IRGP50B60PD1-EP
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Fig. WF1 - Typ. Turn-off Loss Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF2 - Typ. Turn-on Loss Waveform
@ TJ = 25°C using Fig. CT.3
Fig. WF3 - Reverse Recovery Waveform and
Definitions
-100
-50
0
50
100
150
200
250
300
350
400
450
500
550
600
-0.20 0.00 0.20 0.40
Time (µs)
V
CE
(V)
-10
0
10
20
30
40
50
60
I
CE
(A)
90% I
CE
5% I
CE
5% V
CE
Eof f
tf
-50
0
50
100
150
200
250
300
350
400
450
-0.10 0.00 0.10 0.20
Time(µs)
V
CE
(V)
-10
0
10
20
30
40
50
60
70
80
90
I
CE
(A)
90% I
CE
5% V
CE
10% I
CE
Eon Loss
tr
TEST CURRENT
4. Qrr - Area under curve defined by trr
and IRRM
trr X IRRM
Qrr =
2
5. di(rec)M/dt - Peak rate of change of
current during tb portion of trr
t
a
t
b
t
rr
Q
rr
I
F
I
RRM
I
RRM
0.5
di(rec)M/dt
0.75 I
RRM
5
4
3
2
0
1
di /dt
f
1. dif/dt - Rate of change of current
through zero crossing
2. IRRM - Peak reverse recovery current
3. trr - Reverse recovery time measured
from zero crossing point of negative
going IF to point where a line passing
through 0.75 IRRM and 0.50 IRRM
extrapolated to zero current
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IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information. 08/2008
Data and specifications subject to change without notice.
This product has been designed and qualified for Industrial market.
Qualification Standards can be found on IR’s Web site.
TO-247AD Part Marking Information
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TO-247AD package is not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at http://www.irf.com/package/
TO-247AD Package Outline
Dimensions are shown in millimeters (inches)