MJD44H11 (NPN) MJD45H11 (PNP) Preferred Device Complementary Power Transistors DPAK For Surface Mount Applications http://onsemi.com Designed for general purpose power and switching such as output or driver stages in applications such as switching regulators, converters, and power amplifiers. SILICON POWER TRANSISTORS 8 AMPERES 80 VOLTS, 20 WATTS Features *Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix) *Straight Lead Version in Plastic Sleeves ("-1" Suffix) *Electrically Similar to Popular D44H/D45H Series *Low Collector Emitter Saturation Voltage VCE(sat) = 1.0 Volt Max @ 8.0 Amperes *Fast Switching Speeds *Complementary Pairs Simplifies Designs *Epoxy Meets UL 94 V-0 @ 0.125 in *ESD Ratings: Human Body Model, 3B u 8000 V Machine Model, C u 400 V *Pb-Free Packages are Available MARKING DIAGRAMS 4 YWW J4 xH11G 1 2 3 DPAK CASE 369C STYLE 1 4 YWW J4 xH11G MAXIMUM RATINGS Rating Collector-Emitter Voltage Emitter-Base Voltage Collector Current - Continuous - Peak Symbol Max Unit VCEO 80 Vdc VEB 5 Vdc IC 8 16 Adc Total Power Dissipation @ TC = 25C Derate above 25C PD Total Power Dissipation (Note 1) @ TA = 25C Derate above 25C PD Operating and Storage Junction Temperature Range TJ, Tstg W 20 0.16 W/C W 1.75 0.014 W/C -55 to +150 C Symbol Max Unit Thermal Resistance, Junction-to-Case RqJC 6.25 C/W Thermal Resistance, Junction-to-Ambient (Note 1) RqJA 71.4 C/W TL 260 C Lead Temperature for Soldering 2 3 DPAK-3 CASE 369D STYLE 1 Y WW J4xH11 G = Year = Work Week = Device Code x = 4 or 5 = Pb-Free Package ORDERING INFORMATION THERMAL CHARACTERISTICS Characteristic 1 See detailed ordering and shipping information in the package dimensions section on page 6 of this data sheet. Preferred devices are recommended choices for future use and best overall value. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. These ratings are applicable when surface mounted on the minimum pad sizes recommended. (c) Semiconductor Components Industries, LLC, 2008 January, 2008 - Rev. 8 1 Publication Order Number: MJD44H11/D MJD44H11 (NPN) MJD45H11 (PNP) ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic Symbol Min VCEO(sus) 80 Typ Max Unit OFF CHARACTERISTICS Collector-Emitter Sustaining Voltage (IC = 30 mA, IB = 0) Vdc Collector Cutoff Current (VCE = Rated VCEO, VBE = 0) ICES 1.0 mA Emitter Cutoff Current (VEB = 5 Vdc) IEBO 1.0 mA Collector-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.4 Adc) VCE(sat) 1 Vdc Base-Emitter Saturation Voltage (IC = 8 Adc, IB = 0.8 Adc) VBE(sat) 1.5 Vdc ON CHARACTERISTICS DC Current Gain (VCE = 1 Vdc, IC = 2 Adc) hFE DC Current Gain (VCE = 1 Vdc, IC = 4 Adc) 60 - 40 DYNAMIC CHARACTERISTICS Ccb Collector Capacitance (VCB = 10 Vdc, ftest = 1 MHz) MJD44H11 MJD45H11 Gain Bandwidth Product (IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) pF 45 130 fT MJD44H11 MJD45H11 MHz 85 90 SWITCHING TIMES Delay and Rise Times (IC = 5 Adc, IB1 = 0.5 Adc) td + tr MJD44H11 MJD45H11 Storage Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc) ns 300 135 ts MJD44H11 MJD45H11 Fall Time (IC = 5 Adc, IB1 = IB2 = 0.5 Adc ns 500 500 tf MJD44H11 MJD45H11 http://onsemi.com 2 ns 140 100 r(t), EFFECTIVE TRANSIENT THERMAL RESISTANCE (NORMALIZED) MJD44H11 (NPN) MJD45H11 (PNP) 1 0.7 0.5 D = 0.5 0.3 0.2 0.2 RqJC(t) = r(t) RqJC RqJC = 6.25C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) qJC(t) 0.1 0.1 0.07 0.05 0.05 0.02 0.01 0.03 0.02 P(pk) t1 t2 DUTY CYCLE, D = t1/t2 SINGLE PULSE 0.01 0.01 0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 t, TIME (ms) 10 20 30 50 100 200 300 500 1k Figure 1. Thermal Response IC, COLLECTOR CURRENT (AMP) 20 10 500ms 5 3 2 dc There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 2 is based on TJ(pk) = 150_C; TC is variable depending on conditions. Second breakdown pulse limits are valid for duty cycles to 10% provided TJ(pk) v 150_C. TJ(pk) may be calculated from the data in Figure 1. At high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. 100ms 1ms 5ms 1 THERMAL LIMIT @ TC = 25C WIRE BOND LIMIT 0.5 0.3 0.1 0.05 1 50 5 7 10 20 30 3 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 70 100 Figure 2. Maximum Forward Bias Safe Operating Area TA TC 2.5 25 PD, POWER DISSIPATION (WATTS) 0.02 2 20 TC 1.5 15 TA SURFACE MOUNT 1 10 0.5 5 0 0 25 50 75 100 T, TEMPERATURE (C) Figure 3. Power Derating http://onsemi.com 3 125 150 MJD44H11 (NPN) MJD45H11 (PNP) 1000 1000 VCE = 1 V 150C hFE, DC CURRENT GAIN hFE, DC CURRENT GAIN VCE = 1 V 25C 100 -40C 10 0.01 0.1 1 150C 25C 100 -40C 10 0.01 10 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 4. MJD44H11 DC Current Gain Figure 5. MJD45H11 DC Current Gain 1000 1000 hFE , DC CURRENT GAIN 150C 25C -40C 10 0.01 COLLECTOR-EMITTER SATURATION VOLTAGE (V) VCE = 4 V 0.1 1 100 -40C 0.1 1 IC, COLLECTOR CURRENT (AMPS) Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain IC/IB = 10 -40C 25C 150C 0.01 0.1 25C IC, COLLECTOR CURRENT (AMPS) 1 0.1 150C 10 0.01 10 COLLECTOR-EMITTER SATURATION VOLTAGE (V) hFE , DC CURRENT GAIN VCE = 4 V 100 10 IC, COLLECTOR CURRENT (AMPS) 1 IC, COLLECTOR CURRENT (AMPS) 10 1 IC/IB = 10 0.1 -40C 25C 150C 0.01 0.1 Figure 8. MJD44H11 Saturation Voltage VCE(sat) 1 IC, COLLECTOR CURRENT (AMPS) Figure 9. MJD45H11 Saturation Voltage VCE(sat) http://onsemi.com 4 10 10 1.2 BASE-EMITTER SATURATION VOLTAGE (V) BASE-EMITTER SATURATION VOLTAGE (V) MJD44H11 (NPN) MJD45H11 (PNP) IC/IB = 10 1.1 1 0.9 -40C 0.8 0.7 25C 0.6 150C 0.5 0.4 0.1 1 IC, COLLECTOR CURRENT (AMPS) 1.2 IC/IB = 10 1.1 1 0.9 0.8 0.7 25C 0.6 150C 0.5 0.4 0.1 10 -40C Figure 10. MJD44H11 Saturation Voltage VBE(sat) 1 IC, COLLECTOR CURRENT (AMPS) Figure 11. MJD45H11 Saturation Voltage VBE(sat) http://onsemi.com 5 10 MJD44H11 (NPN) MJD45H11 (PNP) ORDERING INFORMATION Device MJD44H11 MJD44H11G MJD44H11-001 MJD44H11-001G MJD44H11RL MJD44H11RLG MJD44H11T4 MJD44H11T4G MJD44H11T5 MJD44H11T5G MJD45H11 MJD45H11G MJD45H11-001 MJD45H11-001G MJD45H11RL MJD45H11RLG Package Type Package Shipping DPAK 369C DPAK (Pb-Free) 75 Units / Rail DPAK-3 369D DPAK-3 (Pb-Free) DPAK 1800 Tape & Reel DPAK (Pb-Free) DPAK DPAK (Pb-Free) 369C DPAK 2500 Tape & Reel DPAK (Pb-Free) DPAK DPAK (Pb-Free) 75 Units / Rail DPAK-3 369D DPAK-3 (Pb-Free) DPAK 1800 Tape & Reel DPAK (Pb-Free) 369C MJD45H11T4 MJD45H11T4G DPAK 2500 Tape & Reel DPAK (Pb-Free) For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 6 MJD44H11 (NPN) MJD45H11 (PNP) PACKAGE DIMENSIONS DPAK CASE 369C ISSUE O -TC B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. SEATING PLANE E R 4 Z A S 1 2 DIM A B C D E F G H J K L R S U V Z 3 U K F J L H D G 2 PL 0.13 (0.005) M INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.180 BSC 0.034 0.040 0.018 0.023 0.102 0.114 0.090 BSC 0.180 0.215 0.025 0.040 0.020 --0.035 0.050 0.155 --- T STYLE 1: PIN 1. BASE 2. COLLECTOR 3. EMITTER 4. COLLECTOR SOLDERING FOOTPRINT* 6.20 0.244 3.0 0.118 2.58 0.101 5.80 0.228 1.6 0.063 6.172 0.243 SCALE 3:1 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. http://onsemi.com 7 MILLIMETERS MIN MAX 5.97 6.22 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 4.58 BSC 0.87 1.01 0.46 0.58 2.60 2.89 2.29 BSC 4.57 5.45 0.63 1.01 0.51 --0.89 1.27 3.93 --- MJD44H11 (NPN) MJD45H11 (PNP) PACKAGE DIMENSIONS DPAK-3 CASE 369D-01 ISSUE B V NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. C B E R 4 Z A S 1 2 3 -TSEATING PLANE K J F H D G 3 PL 0.13 (0.005) M DIM A B C D E F G H J K R S V Z INCHES MIN MAX 0.235 0.245 0.250 0.265 0.086 0.094 0.027 0.035 0.018 0.023 0.037 0.045 0.090 BSC 0.034 0.040 0.018 0.023 0.350 0.380 0.180 0.215 0.025 0.040 0.035 0.050 0.155 --- STYLE 1: PIN 1. 2. 3. 4. T MILLIMETERS MIN MAX 5.97 6.35 6.35 6.73 2.19 2.38 0.69 0.88 0.46 0.58 0.94 1.14 2.29 BSC 0.87 1.01 0.46 0.58 8.89 9.65 4.45 5.45 0.63 1.01 0.89 1.27 3.93 --- BASE COLLECTOR EMITTER COLLECTOR ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. 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