MJD45H11RL - ON Semiconductor

© Semiconductor Components Industries, LLC, 2008

January, 2008 - Rev. 8

1Publication Order Number:

MJD44H11/D

MJD44H11 (NPN)

MJD45H11 (PNP)

Preferred Device

Complementary Power

Transistors

DPAK For Surface Mount Applications

Designed for general purpose power and switching such as output or

driver stages in applications such as switching regulators, converters,

and power amplifiers.

Features

•Lead Formed for Surface Mount Application in Plastic Sleeves

(No Suffix)

•Straight Lead Version in Plastic Sleeves (“-1” Suffix)

•Electrically Similar to Popular D44H/D45H Series

•Low Collector Emitter Saturation Voltage -

VCE(sat) = 1.0 Volt Max @ 8.0 Amperes

•Fast Switching Speeds

•Complementary Pairs Simplifies Designs

•Epoxy Meets UL 94 V-0 @ 0.125 in

•ESD Ratings: Human Body Model, 3B u 8000 V

Machine Model, C u 400 V

•Pb-Free Packages are Available

MAXIMUM RATINGS

Rating Symbol Max Unit

Collector-Emitter Voltage VCEO 80 Vdc

Emitter-Base Voltage VEB 5 Vdc

Collector Current - Continuous

- Peak

IC8

Adc

Total Power Dissipation

@ TC = 25°C

Derate above 25°C

PD20

0.16

W/°C

Total Power Dissipation (Note 1)

@ TA = 25°C

Derate above 25°C

PD1.75

0.014

W/°C

Operating and Storage Junction

Temperature Range

TJ, Tstg -55 to +150 °C

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Thermal Resistance, Junction-to-Case RqJC 6.25 °C/W

Thermal Resistance, Junction-to-Ambient

(Note 1)

RqJA 71.4 °C/W

Lead Temperature for Soldering TL260 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. These ratings are applicable when surface mounted on the minimum pad

sizes recommended.

SILICON

POWER TRANSISTORS

8 AMPERES

80 VOLTS, 20 WATTS

DPAK-3

CASE 369D

STYLE 1

DPAK

CASE 369C

STYLE 1

MARKING

DIAGRAMS

Preferred devices are recommended choices for future use

and best overall value.

Y = Year

WW = Work Week

J4xH11 = Device Code

x = 4 or 5

G = Pb-Free Package

4YWW

xH11G

See detailed ordering and shipping information in the package

dimensions section on page 6 of this data sheet.

ORDERING INFORMATION

YWW

xH11G

http://onsemi.com

MJD44H11 (NPN) MJD45H11 (PNP)

http://onsemi.com

ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)

Characteristic Symbol Min Typ Max Unit

OFF CHARACTERISTICS

Collector-Emitter Sustaining Voltage

(IC = 30 mA, IB = 0)

VCEO(sus) 80 Vdc

Collector Cutoff Current

(VCE = Rated VCEO, VBE = 0)

ICES 1.0 mA

Emitter Cutoff Current

(VEB = 5 Vdc)

IEBO 1.0 mA

ON CHARACTERISTICS

Collector-Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.4 Adc)

VCE(sat) 1 Vdc

Base-Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

VBE(sat) 1.5 Vdc

DC Current Gain

(VCE = 1 Vdc, IC = 2 Adc)

hFE 60 -

DC Current Gain

(VCE = 1 Vdc, IC = 4 Adc)

DYNAMIC CHARACTERISTICS

Collector Capacitance

(VCB = 10 Vdc, ftest = 1 MHz) MJD44H11

MJD45H11

Ccb

130

Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJD44H11

MJD45H11

MHz

SWITCHING TIMES

Delay and Rise Times

(IC = 5 Adc, IB1 = 0.5 Adc) MJD44H11

MJD45H11

td + tr

300

135

Storage Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11

MJD45H11

500

Fall Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc MJD44H11

MJD45H11

140

100

MJD44H11 (NPN) MJD45H11 (PNP)

http://onsemi.com

t, TIME (ms)

0.01

1 k

0.3

0.2

0.07

r(t), EFFECTIVE TRANSIENT THERMAL

RqJC(t) = r(t) RqJC

RqJC = 6.25°C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) - TC = P(pk) qJC(t)

P(pk)

DUTY CYCLE, D = t1/t2

0.01

RESISTANCE (NORMALIZED)

0.7

Figure 1. Thermal Response

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.2

SINGLE PULSE

D = 0.5

0.1

0.02

0.01

0.05

IC, COLLECTOR CURRENT (AMP)

VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)

0.02 3 100

0.5

0.1

THERMAL LIMIT @ TC = 25°C

WIRE BOND LIMIT

5 7 20 7010

100ms

0.05

0.3

5030

Figure 2. Maximum Forward Bias

Safe Operating Area

1ms

500ms

5ms

There are two limitations on the power handling ability of

a transistor: average junction temperature and second

breakdown. Safe operating area curves indicate IC - VCE

limits of the transistor that must be observed for reliable

operation; i.e., the transistor must not be subjected to greater

dissipation than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 150_C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

v 150_C. TJ(pk) may be calculated from the data in

Figure 1. At high case temperatures, thermal limitations will

reduce the power that can be handled to values less than the

limitations imposed by second breakdown.

T, TEMPERATURE (°C)

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

2.5

1.5

0.5

TATC

Figure 3. Power Derating

SURFACE

MOUNT

MJD44H11 (NPN) MJD45H11 (PNP)

http://onsemi.com

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

1000

0.01

Figure 4. MJD44H11 DC Current Gain

10 110

100

Figure 5. MJD45H11 DC Current Gain

Figure 6. MJD44H11 DC Current Gain Figure 7. MJD45H11 DC Current Gain

IC/IB = 10

0.1

Figure 8. MJD44H11 Saturation Voltage

VCE(sat)

IC, COLLECTOR CURRENT (AMPS)

COLLECTOR-EMITTER SATURATION VOLTAGE (V)

0.01

0.1

110

150°C

Figure 9. MJD45H11 Saturation Voltage

VCE(sat)

VCE = 1 V

-40°C

25°C

0.1

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

1000

0.01

10 110

100

150°C

VCE = 1 V

-40°C

25°C

0.1

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

1000

0.01

10 110

100

150°C

VCE = 4 V

-40°C

25°C

0.1

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

1000

0.01

10 110

100

150°C

VCE = 4 V

-40°C

25°C

0.1

150°C

25°C

-40°C

IC/IB = 10

0.1

IC, COLLECTOR CURRENT (AMPS)

COLLECTOR-EMITTER SATURATION VOLTAGE (V)

0.01

0.1

110

150°C

25°C

-40°C

MJD44H11 (NPN) MJD45H11 (PNP)

http://onsemi.com

0.1

Figure 10. MJD44H11 Saturation Voltage

VBE

(

sat

)

IC, COLLECTOR CURRENT (AMPS)

0.8

BASE-EMITTER SATURATION VOLTAGE (V)

1.2

0.4

1.1

0.6

0.9

110

Figure 11. MJD45H11 Saturation Voltage

VBE

(

sat

)

0.5

0.7

IC/IB = 10

150°C

25°C

-40°C

0.1

IC, COLLECTOR CURRENT (AMPS)

0.8

BASE-EMITTER SATURATION VOLTAGE (V)

1.2

0.4

1.1

0.6

0.9

110

0.5

0.7

IC/IB = 10

150°C

25°C

-40°C

MJD44H11 (NPN) MJD45H11 (PNP)

http://onsemi.com

ORDERING INFORMATION

Device Package Type Package Shipping†

MJD44H11 DPAK

369C

75 Units / Rail

MJD44H11G DPAK

(Pb-Free)

MJD44H11-001 DPAK-3

369D

MJD44H11-001G DPAK-3

(Pb-Free)

MJD44H11RL DPAK

369C

1800 Tape & Reel

MJD44H11RLG DPAK

(Pb-Free)

MJD44H11T4 DPAK

2500 Tape & Reel

MJD44H11T4G DPAK

(Pb-Free)

MJD44H11T5 DPAK

MJD44H11T5G DPAK

(Pb-Free)

MJD45H11 DPAK

75 Units / Rail

MJD45H11G DPAK

(Pb-Free)

MJD45H11-001 DPAK-3

369D

MJD45H11-001G DPAK-3

(Pb-Free)

MJD45H11RL DPAK

369C

1800 Tape & Reel

MJD45H11RLG DPAK

(Pb-Free)

MJD45H11T4 DPAK

2500 Tape & Reel

MJD45H11T4G DPAK

(Pb-Free)

†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging

Specifications Brochure, BRD8011/D.

MJD44H11 (NPN) MJD45H11 (PNP)

http://onsemi.com

PACKAGE DIMENSIONS

DPAK

CASE 369C

ISSUE O

2 PL

0.13 (0.005) T

-T- SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.22

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.045 0.94 1.14

G0.180 BSC 4.58 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.102 0.114 2.60 2.89

L0.090 BSC 2.29 BSC

R0.180 0.215 4.57 5.45

S0.025 0.040 0.63 1.01

U0.020 --- 0.51 ---

V0.035 0.050 0.89 1.27

Z0.155 --- 3.93 ---

NOTES:

1. DIMENSIONING AND TOLERANCING

PER ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

123

5.80

0.228

2.58

0.101

1.6

0.063

6.20

0.244

3.0

0.118

6.172

0.243

ǒmm

inchesǓ

SCALE 3:1

*For additional information on our Pb-Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

SOLDERING FOOTPRINT*

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

MJD44H11 (NPN) MJD45H11 (PNP)

http://onsemi.com

PACKAGE DIMENSIONS

DPAK-3

CASE 369D-01

ISSUE B

123

-T-

SEATING

PLANE

D3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.245 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.018 0.023 0.46 0.58

F0.037 0.045 0.94 1.14

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.180 0.215 4.45 5.45

S0.025 0.040 0.63 1.01

V0.035 0.050 0.89 1.27

NOTES:

1. DIMENSIONING AND TOLERANCING PER

ANSI Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

Z0.155 --- 3.93 ---

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,

and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death

associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal

Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner.

MJD44H11/D

PUBLICATION ORDERING INFORMATION

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USA/Canada

Europe, Middle East and Africa Technical Support:

Phone: 421 33 790 2910

Japan Customer Focus Center

Phone: 81-3-5773-3850

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