FQB12P20TM_NL - Fairchild Semiconductor

FQB12P20 / FQI12P20

FQB12P20 / FQI12P2 0

200V P-Channel MOSFET

General Description

These P-Channel enhancement mode power field effect

transistors are produced using Fairchild’s proprietary,

planar stripe, DMOS technology.

This advanced technology has been especially tailored to

minimize on-state resistance, provide superior switching

performance, and withstand high energy pulse in the

avalanche and commutation mode. These devices are well

suited for high efficiency switching DC/DC converters.

Features

• -11.5A, -200V, RDS(on) = 0.47Ω @VGS = -10 V

• Low gate charge ( typical 31 nC)

• Low Crss ( typical 30 pF)

• Fast switching

• 100% avalanche tested

• Improved dv/dt capability

Absolute Maximu m Ratings TC = 25°C unless otherwise noted

Thermal Characteristi cs

Symbol Parameter FQB12P20 / FQI12P20 Units

VDSS Drain-Source Voltage -200 V

IDDrain Current - Continuous (TC = 25°C) -11.5 A

- Continuous (TC = 100°C) -7.27 A

IDM Drain Current - Pulsed (Note 1) -46 A

VGSS Gate-Source Voltage ± 30 V

EAS Single Pulsed Avalanche Energy (Note 2) 810 mJ

IAR Avalanche Current (Note 1) -11.5 A

EAR Repetitive Avalanche Energy (Note 1) 12 mJ

dv/dt Peak Diode Recovery dv/dt (Note 3) -5.5 V/ns

PDPower Dissipation (TA = 25°C) * 3.13 W

Power Dissipation (TC = 25°C) 120 W

- Derate above 25°C 0.96 W/°C

TJ, TSTG Operating and Storage Temperature Range -55 to +150 °C

TLMaximum lead temperature for soldering purposes,

1/8" from case for 5 seconds 300 °C

Symbol Parameter Typ Max Units

RθJC Thermal Resistance, Junction-to-Case -- 1.04 °C/W

RθJA Thermal Resistance, Junction-to-Ambient * -- 40 °C/W

RθJA Thermal Resistance, Junction-to-Ambient -- 62.5 °C/W

* When mounted on the minimum pad size recommended (PCB Mount)

D2-PAK

FQB Series I2-PAK

FQI Series

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October 2008

QFET

•RoHS Compliant

FQB12P20 / FQI12P20

(Note 4)

(Note 4, 5)

(Note 4)

Rev. A1, Oct 2008

Elerical Characteristics TC = 25°C unless otherwise noted

Notes:

1. Repetitive Rating : Pulse wi dth limited by maximum junction temperature

2. L = 9.2mH, IAS = -11.5A, VDD = -50V, RG = 25 Ω, Starting TJ = 25°C

3. ISD ≤ -11.5 A, di/dt ≤ 300A/µs, VDD ≤ BVDSS, Starting TJ = 25°C

4. Pulse Test : Pulse width ≤300µs, Duty cycle ≤2%

5. Essentially independent of operating temperature

Symbol Parame ter Test Condit ions Min Typ Max Unit s

Off Characteristics

BVDSS Drain-S ource Breakdown Voltage VGS = 0 V, I D = -250 µA-200 -- -- V

∆BVDSS

/ ∆TJ

Breakdown Voltage Temperature

Coefficient ID = -250 µA, Referenced to 25°C -- - -- V/°C

IDSS Zero Gate Voltage Drain Current VDS = -200 V, VGS = 0 V -- -- -1 µA

VDS = -160 V, TC = 125°C -- -- -10 µA

IGSSF Gate-Body Leakage Current, Forward VGS = -30 V, VDS = 0 V -- -- -100 nA

IGSSR Gate-Body Leakage Current, Reverse VGS = 30 V, VDS = 0 V -- -- 100 nA

On Characteri st ics

VGS(th) Gate Threshold Voltage VDS = VGS, ID = -250 µA-3.0 -- -5.0 V

RDS(on) Static Drain-Source

On-Resistance VGS = -10 V, ID = -5.75 A -- 0.36 0.47 Ω

gFS Forward Transconductance VDS = -40 V, ID = -5.75 A -- 6.4 -- S

Dynamic Characteristics

Ciss Input Capacitance VDS = -25 V, VGS = 0 V,

f = 1.0 MHz

-- 920 1200 pF

Coss Output Capacitance -- 190 250 pF

Crss Reverse Transf er Capacitance -- 30 40 pF

Switching Characteristics

td(on) Turn-On Delay T ime VDD = -100 V, ID = -11. 5 A,

RG = 25 Ω

-- 20 50 ns

trTurn-On Rise Time -- 195 400 ns

td(off) Turn-Off De l a y Time -- 40 90 ns

tfTurn -Off Fall Time -- 6 0 130 ns

QgTotal Gate Ch a rge VDS = -160 V, ID = -11.5 A,

VGS = -10 V

-- 31 40 nC

Qgs Gate-Source Charge -- 8.1 -- nC

Qgd Gate-Drain Charge -- 16 -- nC

Drain-Source Diode Characte ristics and Maximum Ratings

ISMaximum Continuous Drain-Source Diode Forward Current -- -- -11.5 A

ISM Maximum Pulsed Drain-Source Diode Forward Current -- -- -46 A

VSD Drain-Source Diode Forward Voltage VGS = 0 V, IS = -11.5 A -- -- -5.0 V

trr Reverse Recovery Time VGS = 0 V, I S = -11.5 A,

dIF / dt = 100 A/µs

-- 180 -- ns

Qrr Reverse Recovery Charge -- 1.44 -- µC

FQB12P20 / FQI 12P20

Rev. A1, Oct 2008

0 5 10 15 20 25 30 35

VDS = -100V

VDS = -40V

VDS = -160V

※ Note : ID = -11.5 A

-VGS , G ate-Source Voltage [V]

QG, Total Gate Charge [nC]

10-1 100101

400

800

1200

1600

2000

2400 Ciss = Cgs + Cgd (Cds = shorte d)

Coss = Cds + Cgd

Crss = C gd

※ Notes :

1. VGS = 0 V

2. f = 1 M Hz

Crss

Coss

Ciss

Capacitance [pF]

-VDS, Drain-Source Voltage [V]

0.0 0.5 1.0 1.5 2.0 2.5 3.0

10-1

100

101

150℃

※ No tes :

1. VGS = 0V

2. 250μ

s Pu lse T es t

25℃

-IDR , Reverse Drain Current [A]

-VSD , Sou r c e-Dr ain V oltag e [V]

0 10203040

0.0

0.5

1.0

1.5

2.0

※ N o te : TJ = 25℃

VGS = - 20V

VGS = - 10V

RDS(on) [Ω],

Drain-Source On-Resistance

-ID , Drain C u rrent [A]

246810

10-1

100

101

150℃

25℃

-55℃

※ No tes :

1. VDS = -40V

2. 250μ

s Pu lse T es t

-ID , D r a in Curr e nt [A ]

-VGS , Gate-Source Voltage [V]

10-1 100101

10-1

100

101

VGS

Top : -15.0 V

-10.0 V

-8.0 V

-7.0 V

-6.5 V

-6.0 V

Bo ttom : -5.5 V

※ Notes :

1. 250μ

s Pulse Test

2. TC = 25℃

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

Typical Characteristics

Figure 5. C apacitance C haracterist ics Figure 6. Gate Charge Characteristics

Figu re 3. On-Resistan ce Variation vs.

Drain Current and Gate Voltage Figure 4. Body Diode Fo rward Voltage

Variation vs. Source Current

and Temperature

Figure 2. Transfer CharacteristicsFigure 1. On- R egi on Character ist ic s

FQB12P20 / FQI12P20

Rev. A1, Oct 2008

10-5 10-4 10-3 10-2 10-1 100101

10-2

10-1

100

※ No te s :

1 . ZθJC(t) = 1.04 ℃/W M a x .

2 . D u ty F a c t o r, D = t 1/t2

3 . TJM - T C = PDM * Z θJC(t)

single puls e

D=0.5

0.02

0.2

0.05

0.1

0.01

ZθJC

(t), Therm al Response

t1, Sq u a re W a ve P u lse Du ra tio n [s ec ]

25 50 75 100 125 150

-ID, D rain C urrent [A]

TC, Case Temperature [℃

]

100101102

10-1

100

101

102

10 m s

1 m s

100 µs

Operation in This Area

is Limited by R DS(on)

※ Notes :

1. TC = 25 oC

2. TJ = 150 oC

3. Single Pulse

-ID, Drain Current [A]

-VDS, Drain-Source Voltage [V]

-100 -50 0 50 100 150 200

0.0

0.5

1.0

1.5

2.0

2.5

※ No tes :

1. VGS = -10 V

2. ID = -5.75 A

RDS(ON) , (N o r maliz ed)

Drain-Source On-Resistance

TJ, Junction Tem perature [oC]

-100 -50 0 50 100 150 200

0.8

0.9

1.0

1.1

1.2

※ Notes :

1 . VGS = 0 V

2 . ID = -250 μ

-BV DSS , (N orm a liz e d )

Drain-Sou rce Breakdow n V oltage

TJ, Junction Tem perature [oC]

Typical Characteristics (Continued)

Figure 9. Maximum Safe Operating Area Figure 10. Maximum Drain Current

vs. Case Temperature

Figu re 7. Br ea kdown Volta ge Variation

vs. Temperature Figure 8. On-Resistance Variation

vs. Temperature

Figure 11. Transient Ther m al Res pons e Cur ve

PDM

FQB12P20 / FQI 12P20

Rev. A1, Oct 20008

Charge

VGS

-10V Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

Charge

VGS

-10V Qg

Qgs Qgd

-3mA

VGS

DUT

VDS

300nF

50KΩ

200nF

12V

Same Type

as DUT

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS RL

DUT

VGS

VDS

VGS 10%

90%

td(on) tr

ton toff

td(off) tf

VDD

-10V

VDS RL

DUT

VGS

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

EAS =LI

AS2

----

EAS =LI

AS2

----

1--------------------

BVDSS -V

BVDSS

VDD

VDS

BVDSS

t p

VDD

IAS

VDS (t)

ID (t)

Time

-10V DUT

t p

Gate Charge Test Circuit & Waveform

Resistive Switching Test Circuit & Waveforms

Unclamped Inductive Switching Test Circuit & Waveforms

FQB12P20 / FQI12P20

Rev. A1, Oct 2008

Peak Diode Recovery dv/dt Tes t Ci rcuit & Wavefo r m s

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

DUT

VDS

Driver

RGCompliment of DUT

(N-Channel)

VGS • dv/dt controlled by RG

•I

SD con trolled by pulse period

VDD

ISD

10V

VGS

( Driver )

ISD

( DUT )

VDS

( DUT )

VDD

Body Diode

Forward Voltage Drop

VSD

IFM , Body Diode Forward Current

Body Diode Reverse Current

IRM

Body Diode Recovery dv/dt

di/dt

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

D = Gate Pulse Width

Gate Pu lse P eri od

--------------------------

FQB12P20 / FQI 12P20

Rev. A1, Oct 2008

Dimensions in Millimeters

Mechanical Dimensions

D2 - PAK

FQB12P20 / FQI12P20

Rev. A1, Oct 2008

Mechanical Dimensions

Dimensions in Millimeters

I2 - PAK

FQB12P20 / FQI12P20

FQB12P20 / FQI12P20 Rev. A1www.fairchildsemi.com

Rev. I37

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