V
RRM
= 20 V - 40 V
I
F(AV)
= 40 A
Features
• High Surge Capability DO-5 Package
• Types from 20 V to 40V V
RRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
3. Stud is base.
Parameter Symbol Unit
Repetitive peak reverse voltage V
RRM
V
RMS reverse voltage V
RMS
V
DC blocking voltage
V
DC
V
1N5832 thru 1N5834R
2. Reverse polarity (R): Stud is anode.
Silicon Power
Schottk
y
Diode
30
20
1N5832 (R) 1N5833 (R) 1N5834 (R)
30
2114
Maximum ratings, at T
j
= 25 °C, unless otherwise specified ("R" devices have leads reversed)
20 40
28
40
Conditions
DC
blocking
voltage
V
DC
V
Operating temperature T
j
°C
Storage temperature T
stg
°C
Parameter Symbol Unit
Average forward current (per
pkg) I
F(AV)
A
Maximum instantaneous forward
voltage (per leg)
Thermal characteristics
Maximum thermal resistance,
junction - case (per leg) R
ΘJC
°C/W
Inch ponds
(in-pb)
T
j
= 100 °C
I
F
= 40 A, T
j
= 25 °CV
F
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
T
j
= 150 °C
1.45 1.45
20 20 20
30
20
-55 to 150 -55 to 150
10 10 10
40
800
V
Conditions 1N5832 (R) 1N5833 (R)
-55 to 150
1N5834 (R)
0.70
T
C
= 125 °C 40 40
-55 to 150 -55 to 150
40
-55 to 150
Peak forward surge current (per
leg) I
FSM
t
p
= 8.3 ms, half sine 800 800 A
Mounting torque 30 30 30
Maximum instantaneous reverse
current at rated DC blocking
voltage (per leg)
I
R
T
j
= 25 °C 11 1
mA
1.45
0.70 0.70
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1
1N5832 thru 1N5834R
www.genesicsemi.com/silicon-products/schottky-rectifiers/
2
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
1N5832 thru 1N5834R
DO- 5 (DO-203AB)
J
K
G
F
A
E
D
P
N
B
C
M
Inches Millimeters
Min Max Min Max
A 1/4 –28 UNF
B 0.669 0.687 17.19 17.44
C ----- 0.794 ----- 20.16
D ----- 1.020 ----- 25.91
E 0.422 0.453 10.72 11.50
F 0.115 0.200 2.93 5.08
G ----- 0.460 ----- 11.68
J ----- 0.280 ----- 7.00
K 0.236 ----- 6.00 -----
M ----- 0.589 ----- 14.96
N ----- 0.063 ----- 1.60
P 0.140 0.175 3.56 4.45
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