DSI30-12AS
Single Diode
Standard Rectifier
2/4
1
3
Part number
DSI30-12AS
Backside: cathode
FAV
F
V V1.25
RRM
30
1200
=
V=V
I=A
Features / Advantages: Applications: Package:
● Planar passivated chips
● Very low leakage current
● Very low forward voltage drop
● Improved thermal behaviour
● Diode for main rectification
● For single and three phase
bridge configurations
TO-263 (D2Pak)
● Industry standard outline
● RoHS compliant
● Epoxy meets UL 94V-0
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact the sales office, which is responsible for you.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact the sales office, which is responsible for you.
Should you intend to use the product in aviation, in health or live endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
Terms Conditions of usage:
IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI30-12AS
V = V
A²s
A²s
A²s
A²s
Symbol
Definition
Ratings
typ.
max.
I
R
V
IA
V
F
1.29
R0.9 K/W
R
min.
30
V
RSM
V
40T = 25°C
VJ
T = °C
VJ
mA1.5V = V
R
T = 25°C
VJ
I = A
F
V
T = °C
C
130
P
tot
160 WT = 25°C
C
RK/W
30
1200
max. non-repetitive reverse blocking voltage
reverse current
forward voltage drop
total power dissipation
Unit
1.60
T = 25°C
VJ
150
V
F0
V0.82T = °C
VJ
175
r
F
14.1 mΩ
V1.25T = °C
VJ
I = A
F
V
30
1.66
I = A
F
60
I = A
F
60
threshold voltage
slope resistance for power loss calculation only
µA
150
V
RRM
V1200
max. repetitive reverse blocking voltage
T = 25°C
VJ
C
J
10
junction capacitance
V = V;400 T = 25°Cf = 1 MHz
RVJ
pF
I
FSM
t = 10 ms; (50 Hz), sine T = 45°C
VJ
max. forward surge current
T = °C
VJ
150
I²t T = 45°C
value for fusing
T = °C150
V = 0 V
R
V = 0 V
R
V = 0 V
V = 0 V
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
t = 10 ms; (50 Hz), sine
t = 8,3 ms; (60 Hz), sine
VJ
R
VJ
R
T = °C
VJ
175
300
325
325
315
A
A
A
A
255
275
450
440
1200
FAV
d =rectangular 0.5
average forward current
thermal resistance junction to case
thJC
thermal resistance case to heatsink
thCH
Rectifier
1300
0.25
IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI30-12AS
1)
I
RMS
is typically limited by the pin-to-chip resistance (1); or by the current capability of the chip (2). In case of (1) and a product
with multiple pins for one chip-potential, the current capability can be increased by connecting the pins as one contact.
Ratings
Pr
odu
c
t
M
a
rk
in
g
Date Code
Part No.
Logo
Assembly Code
XXXXXXXXX
IXYS
Zyyww
000000
Assembly Line
DSI30-12AC ISOPLUS220AC (2) 1200
Package
T
op
°C
T
VJ
°C175
virtual junction temperature
-40
Weight g2
Symbol
Definition
typ.
max.
min.
operation temperature
Unit
F
C
N60
mounting force with clip
20
I
RMS
RMS current
35 A
per terminal
150-40
DSI30-16AS
DSI30-16A
TO-263AB (D2Pak) (2)
TO-220AC (2)
1600
1600
DSI30-08AS
DSI30-08A
DSI30-08AC
TO-263AB (D2Pak) (2)
TO-220AC (2)
ISOPLUS220AC (2)
800
800
800
TO-263 (D2Pak)
DSI30-12AS-TUB Tube 50 470988DSI30-12AS
Similar Part Package Voltage class
DSI30-12A TO-220AC (2) 1200
Delivery Mode Quantity Code No.Ordering Number Marking on Product
Alternative
Ordering
1)
DSI30-12AS 507511Tape & Reel 800DSI30-12ASStandard
T
stg
°C150
storage temperature
-40
threshold voltage
V0.82
mΩ
V
0 max
R
0 max
slope resistance *
11
Equivalent Circuits for Simulation
T =
VJ
I
V
0
R
0
Rectifier
175 °C
* on die level
IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI30-12AS
W
c2
A
A1
c
L
E
2x e
L1
D
321
3.81
(0.150)
1.78
(0.07)
2.54 (0.100)
3.05
(0.120)
10.92
(0.430)
9.02
(0.355)
mm (Inches)
Recommended min. foot print
3x b2
E1
2x b
H
D1
Supplier
Option
L2
4
min max min max
A 4.06 4.83 0.160 0.190
A1
A2
b 0.51 0.99 0.020 0.039
b2 1.14 1.40 0.045 0.055
c 0.40 0.74 0.016 0.029
c2 1.14 1.40 0.045 0.055
D 8.38 9.40 0.330 0.370
D1 8.00 8.89 0.315 0.350
D2
E 9.65 10.41 0.380 0.410
E1 6.22 8.50 0.245 0.335
e
e1
H 14.61 15.88 0.575 0.625
L 1.78 2.79 0.070 0.110
L1 1.02 1.68 0.040 0.066
Wtyp.
0.02 0.040 typ.
0.0008 0.002
Dim.
Millimeter Inches
typ. 0.10 typ. 0.004
2.41 0.095
0.098
4.28 0.169
All dimensions conform with
and/or within JEDEC standard.
2,54 BSC 0,100 BSC
2.5
2/4
1
3
Outlines TO-263 (D2Pak)
IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
DSI30-12AS
0.001 0.01 0.1 1
100
150
200
2
50
2 3 4 5 6 7 8 9
011
0
100
200
300
400
5
00
0.6 0.8 1.0 1.2 1.4 1.6 1.8
0
10
20
30
40
50
60
0 10 20 30
0
10
20
30
40
50
0 50 100 150 200
1 10 100 1000 10000
0.0
0.2
0.4
0.6
0.8
1.0
0 50 100 150 200
0
10
20
30
40
I
F
[A]
V
F
[V]
I
FSM
[A]
t [s]
I
2
t
[A
2
s]
t [ms]
P
tot
[W]
I
F(AV)M
[A] T
amb
[°C]
I
F(AV)M
[A]
T
C
[°C]
Z
thJC
[K/W]
Fig. 1 Forward current versus
voltage drop per diode
Fig. 2 Surge overload current Fig. 3 I
2
t versus time per diode
Fig. 4 Power dissipation vs. direct output current and ambient temperature Fig. 5 Max. forward current vs.
case temperature
Fig. 6 Transient thermal impedance junction to case
t [ms]
Constants for Z
thJC
calculation:
i R
thi
(K/W) t
i
(s)
1 0.03 0.0004
2 0.08 0.002
3 0.2 0.003
4 0.39 0.03
5 0.2 0.29
T
VJ
= 25°C
T
VJ
= 150°C
T
VJ
= 45°C
50 Hz, 80% V
RRM
T
VJ
= 45°C
T
VJ
= 150°C
V
R
= 0 V
T
VJ
= 125°C
150°C
R
thHA
:
0.6 K/W
0.8 K/W
1 K/W
2 K/W
4 K/W
8 K/W
DC =
1
0.5
0.4
0.33
0.17
0.08
DC =
1
0.5
0.4
0.33
0.17
0.08
Rectifier
IXYS reserves the right to change limits, conditions and dimensions. 20130107aData according to IEC 60747and per semiconductor unless otherwise specified
© 2013 IXYS all rights reserved
Mouser Electronics
Authorized Distributor
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