On-State Current
1.0 Amp
The FT01 series of TRIACs uses a high
performance PNPN technology.
These part are intended for general
purpose applications where logic
compatible gate sensitivity is required.
Apr - 03
Absolute Maximum Ratings, according to IEC publication No. 134
RMS On-state Current
Non-repetitive On-State Current
Non-repetitive On-State Current
Fusing Current
Peak Gate Current
Peak Gate Dissipation
Gate Dissipation
Critical rate of rise of on-state current
Operating Temperature
Storage Temperature
Soldering Temperature
I
T(RMS)
PARAMETER CONDITIONS Min. Max. Unit
TO92
(Plastic)
Gate Trigger Current
< 10 mA
Off-State Voltage
200 V ÷ 400 V ( 02, 03)
200 V ÷ 600 V (04, 05, 07, 09)
SYMBOL
I
TSM
I
TSM
I
2
t
I
GM
P
GM
P
G(AV)
T
j
T
stg
T
sld
All Conduction Angle, T
L
= 70 ºC
Half Cycle, 60 Hz
Half Cycle, 50 Hz
t
p
= 10 ms, Half Cycle
20 µs max.
20 µs max.
20 ms max.
1.6 mm from case, 10s max.
-40
-40
A
A
A
A
2
s
A
W
W
A/µs
ºC
ºC
ºC
1.0
8.5
8
0.35
1
2
0.1
20
+125
+150
260
di/dt
G
MT1
MT2
Tr ≤ 100 ns, F = 120 Hz
T
j
= 125 ºC
I
G
= 2 x I
GT
Repetitive Peak Off State
Voltage
PARAMETER VOLTAGE UnitSYMBOL
V
DRM
V
RRM
B
200 V
M *
600
D
400
FT01...A
LOGIC LEVEL TRIAC
* 04, 05, 07, 09 sensitivities
Apr - 03
PART NUMBER INFORMATION
FAGOR
TRIAC
CURRENT
CASE
VOLTAGE
SENSITIVITY
F T 01 05 B A 00
FORMING
BU
PACKAGING
FT01...A
LOGIC LEVEL TRIAC
Electrical Characteristics
Gate Trigger Current
Off-State Leakage Current
Threshold Voltage
Dynamic Resistance
On-state Voltage
Gate Trigger Voltage
Gate Non Trigger Voltage
Holding Current
Latching Current
Critical Rate of Voltage Rise
PARAMETER CONDITIONS SENSITIVITY Unit
SYMBOL
I
GT
I
DRM
V
D
= 12 V
DC
, R
L
= 30Ω, T
j
= 25 ºC mA
0.5
5
0.95
400
1.5
1.3
0.2
10
10
20
20
1
60
150
mA
µA
V
mΩ
V
V
V
mA
mA
V/µs
V/µs
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MAX
MIN
MAX
MAX
MAX
MIN
MIN
/I
RRM
V
TM
*
V
GT
V
GD
I
H
*
I
L
dv / dt*
R
th(j-a)
Thermal Resistance
Junction-Ambient
V
D
= V
DRM
, T
j
= 125 ºC
T
j
= 25 ºC
V
R
= V
RRM
,
I
T
= 1.1 Amp, tp = 380 µs, T
j
= 25 ºC
V
D
= 12 V
DC
, R
L
= 30Ω, T
j
= 25 ºC
I
T
= 50 mA
T
j
= 25 ºC
I
G
= 1.2 I
GT
,
T
j
= 25 ºC
V
D
= 0.67 x V
DRM
, Gate open
T
j
= 125 ºC
Quadrant
Q1÷Q3
Q4
Q1÷Q4
Q1÷Q4
Q1,Q3,Q4
Q2
V
D
= V
DRM
, R
L
= 3.3KΩ, T
j
= 125 ºC
ºC/W
ºC/W
(*) For either polarity of electrode MT2 voltage with reference to electrode MT1.
R
th(j-l)
Thermal Resistance
Junction-Leads for AC
(dv/dt)c*
(di/dt)c= 0.44 A/ms T
j
= 110 ºC
V
to
R
d
T
j
= 125 ºC
T
j
= 125 ºC
07
5
7
05
5
5
03
3
5
02
3
3
09
10
10
7
7
14
10
0.5
25
25
50
2
04
5
Critidal rise rate of
commutating off-state
Voltage
Apr - 03
Fig. 1: Maximum power dissipation versus
RMS on-state current (full cycle)
Fig. 3: RMS on-state current versus ambient
temperature (full cycle)
2.6
2.4
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
Igt ,
Fig. 5: Relative variation of gate trigger current ,
holding current and latching current versus
junction temperature.
-40 -20 0 60 80 100 120 140
Igt ,
Ih , Il (Tj)
Ih , Il (Tj = 25 ºC)
4020
1 10 100 1000
Fig. 6: Non repetitive surge peak on-state
current versus number of cycles.
8
7
6
5
4
3
2
1
I TSM (A)
Tj initial = 25 ºC
1.00
0.10
0.01
Zth(j-a) / Rth(j-a)
Fig. 4: Relative variation of thermal impedance
junction to ambient versus pulse duration.
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
1
0.8
0.6
0.4
0.2
0
I T(RMS) (A)
0 20 40 60 80 100 12010 30 50 70 90 110 130
Igt
0 0.1
1.25
1.0
0.75
0.50
0.25
0.0
0.2 0.3 0.4 0.5 0.6 0.7 0.8
P (W)
Tj (ºC) Number of cycles
tp (s)
T amb (ºC)
IT(RMS)(A)
Fig. 2: RMS on-state current versus ambient
temperature (full cycle)
1.25
1.0
0.75
0.50
0.25
0.0
I T(RMS) (A)
0 20 40 60 80 100 12010 30 50 70 90 110 130
T lead (ºC)
Ih & Il
FT01...A
LOGIC LEVEL TRIAC
Apr - 03
0 0.5
10
1
0.1
1 1.5 2 2.5 3 3.5
Fig. 8: On-state characteristics (maximum
values).
ITM(A)
4
1
100
10
1
0.1
10
ITSM(A). Pt (A2s)
Fig. 7: Non repetitive surge peak on-state
current for a sinusoidal pulse with width:
tp ≤ 10 ms, and corresponding value of I2t.
Tj initial = 25 ºC
tp(ms)
PACKAGE MECHANICAL DATA
TO92 (Plastic)
A
B
C
D
E
F
G
H
a
b
REF.
DIMENSIONS
Milimeters
Min. Typ. Max.
Marking: type number
Weight: 0.2 g
-
4.55
2.42
1.15
4.55
12.7
3.55
-
0.38
0.33
1.5
4.6
2.54
1.27
4.6
14.1
3.6
1.5
0.43
0.38
-
4.65
2.66
1.39
4.65
15.5
3.65
-
0.48
0.43
A
B
CD
G
bE F
H
a
ITSM
Tj initial
25 ºC
Tj max
Tj max
Vto = 0.95 V
Rt = 0.420Ω
VTM(V)
I2 t
FT01...A
LOGIC LEVEL TRIAC
