UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes 63 A, 600 V HGTG30N60C3D www.onsemi.com The HGTG30N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor. The much lower on-state voltage drop varies only moderately between 25C and 150C. The IGBT used is the development type TA49051. The diode used in anti-parallel with the IGBT is the development type TA49053. This IGBT is ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential Formerly Developmental Type TA49014. C G E E C G Features * * * * * * 63 A, 600 V at TC = 25C Typical Fall Time 230 ns at TJ = 150C Short Circuit Rating Low Conduction Loss Hyperfast Anti-Parallel Diode This is a Pb-Free Device TO-247-3LD SHORT LEAD CASE 340CK JEDEC STYLE MARKING DIAGRAM $Y&Z&3&K G30N60C3D $Y = ON Semiconductor Logo &Z = Assembly Plant Code &3 = Numeric Date Code &K = Lot Code G30N60C3D = Specific Device Code ORDERING INFORMATION See detailed ordering and shipping information on page 8 of this data sheet. (c) Semiconductor Components Industries, LLC, 2009 April, 2020 - Rev. 2 1 Publication Order Number: HGTG30N60C3D/D HGTG30N60C3D ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise specified) Parameter Symbol HGTG30N60C3D Unit BVCES 600 V Collector Current Continuous At TC = 25C At TC = 110C IC25 IC110 63 30 A A Average Diode Forward Current at 110C I(AVG) 25 A ICM 252 A Gate to Emitter Voltage Continuous VGES 20 V Gate to Emitter Voltage Pulsed VGEM 30 V Switching Safe Operating Area at TJ = 150C SSOA 60 A at 600 V PD 208 W 1.67 W/C TJ, TSTG -40 to 150 C Maximum Lead Temperature for Soldering TL 260 C Short Circuit Withstand Time (Note 2) at VGE = 15 V tSC 4 ms Short Circuit Withstand Time (Note 2) at VGE = 10 V tSC 15 ms Collector to Emitter Voltage Collector Current Pulsed (Note 1) Power Dissipation Total at TC = 25C Power Dissipation Derating TC > 25C Operating and Storage Junction Temperature Range Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected. 1. Pulse width limited by maximum junction temperature. 2. VCE(PK) = 360 V, TJ =125C, RG = 25 W. ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise specified) Parameter Symbol Collector to Emitter Breakdown Voltage BVCES IC = 250 mA, VGE = 0 V Emitter to Collector Breakdown Voltage BVECS IC = 10 mA, VGE = 0 V Collector to Emitter Leakage Current Collector to Emitter Saturation Voltage Gate to Emitter Threshold Voltage Gate to Emitter Leakage Current Switching SOA Gate to Emitter Plateau Voltage On-State Gate Charge Current Turn-On Delay Time Current Rise Time Current Turn-Off Delay Time ICES VCE(SAT) VGE(TH) IGES SSOA VGEP QG(ON) td(ON)I trI td(OFF)I Test Condition Min Typ Max Unit 600 - - V 15 25 - V VCE = BVCES TC = 25C - - 250 mA VCE = BVCES TC = 150C - - 3.0 mA IC = IC110, VGE = 15 V TC = 25C - 1.5 1.8 V TC = 150C - 1.7 2.0 V TC = 25C 3.0 5.2 6.0 V - - 100 nA VCE(PK) = 480 V 200 - - A VCE(PK) = 600 V 60 - - A IC = IC110, VCE = 0.5 BVCES - 8.1 - V IC = IC110, VCE = 0.5 BVCES VGE = 15 V - 162 180 nC VGE = 20 V - 216 250 nC - 40 - ns - 45 - ns - 320 400 ns - 230 275 ns IC = 250 mA, VCE = VGE VGE = 20 V TJ = 150C, VGE = 15 V, RG = 3 W, L = 100 mH TJ = 150C, ICE = IC110, VCE(PK) = 0.8 BVCES, VGE = 15 V, RG = 3 W, L = 100 mH Current Fall Time tfI Turn-On Energy EON - 1050 - mJ Turn-Off Energy (Note 3) EOFF - 2500 - mJ Diode Forward Voltage VEC Diode Reverse Recovery Time trr IEC = 30 A - 1.75 2.2 V IEC = 30 A, dIEC/dt = 100 A/ms - 52 60 ns IEC = 1.0 A, dIEC/dt = 100 A/ms - 42 50 ns www.onsemi.com 2 HGTG30N60C3D ELECTRICAL CHARACTERISTICS (TC = 25C unless otherwise specified) (continued) Parameter Symbol Thermal Resistance RqJC Test Condition Min Typ Max Unit IGBT - - 0.6 C/W Diode - - 1.3 C/W Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product performance may not be indicated by the Electrical Characteristics if operated under different conditions. 3. Turn-Off Energy Loss (EOFF) is defined as the integral of the instantaneous power loss starting at the trailing edge of the input pulse and ending at the point where the collector current equals zero (ICE = 0 A). The HGTG30N60C3D was tested per JEDEC standard No. 24-1 Method for Measurement of Power Device Turn-Off Switching Loss. This test method produces the true total Turn-Off Energy Loss. Turn-On losses include diode losses. TYPICAL PERFORMANCE CURVES PULSE DURATION = 250 ms DUTY CYCLE < 0.5%, VCE = 10 V 125 ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) 150 100 TC = 150C 75 TC = 25C 50 TC = -40C 25 0 4 8 6 10 125 TC = 25C TC = 150C 50 25 0 0 1 2 3 7.0 V 8.0 V 25 7.5 V 0 2 4 6 8 10 150 TC = -40C 100 75 8.5 V 50 Figure 2. SATURATION CHARACTERISTICS ICE, COLLECTOR TO EMITTER CURRENT (A) ICE, COLLECTOR TO EMITTER CURRENT (A) PULSE DURATION = 250 ms DUTY CYCLE < 0.5%, VGE = 10 V 9.0 V 75 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 1. TRANSFER CHARACTERISTICS 150 9.5 V 100 0 12 VGE, GATE TO EMITTER VOLTAGE (V) PULSE DURATION = 250 ms, DUTY CYCLE < 0.5%, TC = 25C 150 10.0 V VGE = 15 V 12.0 V 125 4 TC = -40C TC = 25C 75 50 25 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 3. COLLECTOR TO EMITTER ON-STATE VOLTAGE TC = 150C 100 0 5 PULSE DURATION = 250 ms DUTY CYCLE < 0.5%, VGE = 15 V 125 0 1 2 3 4 VCE, COLLECTOR TO EMITTER VOLTAGE (V) Figure 4. COLLECTOR TO EMITTER ON-STATE VOLTAGE www.onsemi.com 3 5 HGTG30N60C3D VGE = 15 V 60 50 40 30 20 10 0 25 50 75 100 125 150 25 450 20 250 10 5 10 td(OFF)I, TURN-OFF DELAY TIME (ns) td(ON)I, TURN-ON DELAY TIME (ns) VGE = 10 V VGE = 15 V 30 20 10 10 20 30 40 50 60 500 11 12 13 150 14 100 15 TJ = 150C, RG = 3 W, L = 100 mH, VCE(PK) = 480 V 400 VGE = 15 V 300 VGE = 10 V 200 100 10 ICE, COLLECTOR TO EMITTER CURRENT (A) 20 30 40 50 60 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 7. TURN-ON DELAY TIME vs. COLLECTOR TO EMITTER CURRENT Figure 8. TURN-OFF DELAY TIME vs. COLLECTOR TO EMITTER CURRENT 500 500 TJ = 150C, RG = 3 W, L = 100 mH, VCE(PK) = 480 V 400 tfI FALL TIME (ns) trI, TURN-ON RISE TIME (ns) 200 t SC Figure 6. SHORT CIRCUIT WITHSTAND TIME TJ = 150C, RG = 3 W, L = 100 mH, VCE(PK) = 480 V 50 40 300 15 VGE, GATE TO EMITTER VOLTAGE (V) Figure 5. MAXIMUM DC COLLECTOR CURRENT vs. CASE TEMPERATURE 100 400 ISC 350 TC, CASE TEMPERATURE (C) 200 500 VCE = 360 V, RG = 25 W, TJ = 125C VGE = 10 V 100 VGE = 15 V 10 10 20 30 40 50 300 VGE = 10 V 200 100 10 60 TJ = 150C, RG = 3 W, L = 100 mH, VCE(PK) = 480 V ICE, COLLECTOR TO EMITTER CURRENT (A) VGE = 15 V 20 30 40 50 ICE, COLLECTOR TO EMITTER CURRENT (A) Figure 9. TURN-ON RISE TIME vs. COLLECTOR TO EMITTER CURRENT Figure 10. TURN-OFF FALL TIME vs. COLLECTOR TO EMITTER CURRENT www.onsemi.com 4 60 ISC, PEAK SHORT CIRCUIT CURRENT (A) 70 tSC, SHORT CIRCUIT WITHSTAND TIME (ms) ICE, DC COLLECTOR CURRENT (A) TYPICAL PERFORMANCE CURVES (continued) HGTG30N60C3D EOFF, TURN-OFF ENERGY LOSS (mJ) 8.0 TJ = 150C, RG = 3 W, L = 100 mH, VCE(PK) = 480 V 7.0 6.0 5.0 VGE = 10 V 4.0 3.0 2.0 VGE = 15 V 1.0 0 10 20 30 40 50 60 6.0 TJ = 150C, RG = 3 W, L = 100 mH, VCE(PK) = 480 V 5.0 4.0 3.0 VGE = 10 V or 15 V 2.0 1.0 0 10 ICE, COLLECTOR TO EMITTER CURRENT (A) TJ = 150C, TC = 75C, RG = 25 W, L = 100 mH 100 VGE = 15 V fMAX1 = 0.05 / (tD(OFF)I + tD(ON)I) fMAX2 = (PD - PC) / (EON + EOFF) PD = ALLOWABLE DISSIPATION PC = CONDUCTION DISSIPATION (DUTY FACTOR = 50%) RqJC = 0.6C/W 10 1 10 5 20 VGE = 10 V 30 40 250 150 LIMITED BY CIRCUIT 100 50 0 VCE, COLLECTOR TO EMITTER VOLTAGE (V) C, CAPACITANCE (pF) 6000 5000 4000 3000 0 0 C OES C RES 5 10 15 100 200 300 400 500 600 Figure 14. SWITCHING SAFE OPERATING AREA C IES 1000 60 VCE(PK), COLLECTOR EMITTER VOLTAGE (V) FREQUENCY = 400 kHz 2000 50 200 0 60 Figure 13. OPERATING FREQUENCY vs. COLLECTOR TO EMITTER CURRENT 7000 40 TJ = 150C, VGE = 15 V, L = 100 mH ICE, COLLECTOR TO EMITTER CURRENT (A) 8000 30 Figure 12. TURN-OFF ENERGY LOSS vs. COLLECTOR TO EMITTER CURRENT ICE, COLLECTOR TO EMITTER CURRENT (A) fMAX, OPERATING FREQUENCY (kHz) Figure 11. TURN-ON ENERGY LOSS vs. COLLECTOR TO EMITTER CURRENT 500 20 ICE, COLLECTOR TO EMITTER CURRENT (A) 20 480 9 VCE = 400 V 240 6 VCE = 200 V 120 VCE, COLLECTOR TO EMITTER VOLTAGE (V) 3 0 40 80 120 160 QG, GATE CHARGE (nC) Figure 15. CAPACITANCE vs. COLLECTOR TO EMITTER VOLTAGE Figure 16. GATE CHARGE WAVEFORMS www.onsemi.com 5 15 12 VCE = 600 V 360 0 25 IG(REF) = 3.54 mA, RL = 200 W,TC = 25C 600 0 200 VGE, GATE TO EMITTER VOLTAGE (V) EON, TURN-ON ENERGY LOSS (mJ) TYPICAL PERFORMANCE CURVES (continued) HGTG30N60C3D TYPICAL PERFORMANCE CURVES (continued) IC, COLLECTOR CURRENT (A) 500 10 ms 100 ms 100 1 ms 10 ms 10 DC 1 *Notes: 1. TC = 25C 2. TC = 25C 3. Single Pulse 0.1 0.01 1 10 100 1000 VCE, COLLECTOR-EMITTER VOLTAGE (V) ZqJC, NORMALIZED THERMAL RESPONSE Figure 17. SOA CHARACTERISTICS 100 0.5 0.2 10-1 0.1 t1 0.05 PD 0.02 t2 0.01 DUTY FACTOR, D = t1 / t2 PEAK TJ = (PD x ZqJC x RqJC) + TC SINGLE PULSE 10-2 10-5 10-4 10-3 10-2 10-1 101 100 t1, RECTANGULAR PULSE DURATION (s) Figure 18. IGBT NORMALIZED TRANSIENT THERMAL IMPEDANCE, JUNCTION TO CASE 60 tr, RECOVERY TIMES (ns) IEC, FORWARD CURRENT (A) 200 100C 10 150C 1 0 0.5 25C 1.0 1.5 2.0 2.5 trr 40 30 ta 20 tb 10 0 3.0 TC = 25C, dIEC/dt = 100 A/ms 50 VEC, FORWARD VOLTAGE (V) 0 5 10 30 IEC, FORWARD CURRENT (A) Figure 19. DIODE FORWARD CURRENT vs. FORWARD VOLTAGE DROP Figure 20. RECOVERY TIMES vs. FORWARD CURRENT www.onsemi.com 6 HGTG30N60C3D TEST CIRCUIT AND WAVEFORMS 90% L = 100 mH RHRP3060 10% VGE EOFF EON VCE RG = 3 W 90% + - VDD = 480 V 10% ICE t d(OFF)I t fI t rI t d(ON)I Figure 21. INDUCTIVE SWITCHING TEST CIRCUIT Figure 22. SWITCHING TEST WAVEFORMS OPERATING FREQUENCY INFORMATION Operating frequency information for a typical device (Figure 13) is presented as a guide for estimating device performance for a specific application. Other typical frequency vs collector current (ICE) plots are possible using the information shown for a typical unit in Figures 4, 7, 8, 11 and 12. The operating frequency plot (Figure 13) of a typical device shows fMAX1 or fMAX2 whichever is smaller at each point. The information is based on measurements of a typical device and is bounded by the maximum rated junction temperature. fMAX1 is defined by fMAX1 = 0.05 / (tD(OFF)I + tD(ON)I). Deadtime (the denominator) has been arbitrarily held to 10% of the on-state time for a 50% duty factor. Other definitions are possible. tD(OFF)I and tD(ON)I are defined in Figure21. Device turn-off delay can establish an additional frequency limiting condition for an application other than TJM. tD(OFF)I is important when controlling output ripple under a lightly loaded condition. fMAX2 is defined by fMAX2 = (PD - PC) / (EOFF + EON). The allowable dissipation (PD) is defined by PD = (TJM - TC) / RqJC. The sum of device switching and conduction losses must not exceed PD. A 50% duty factor was used (Figure 13) and the conduction losses (PC) are approximated by PC = (VCE x ICE) / 2. EON and EOFF are defined in the switching waveforms shown in Figure21. EON is the integral of the instantaneous power loss (ICE x VCE) during turn-on and EOFF is the integral of the instantaneous power loss during turn-off. All tail losses are included in the calculation for EOFF; i.e. the collector current equals zero (ICE = 0). HANDLING PRECAUTIONS FOR IGBTs Insulated Gate Bipolar Transistors are susceptible to gate-insulation damage by the electrostatic discharge of energy through the devices. When handling these devices, care should be exercised to assure that the static charge built in the handler's body capacitance is not discharged through the device. With proper handling and application procedures, however, IGBTs are currently being extensively used in production by numerous equipment manufacturers in military, industrial and consumer applications, with virtually no damage problems due to electrostatic discharge. IGBTs can be handled safely if the following basic precautions are taken: 1. Prior to assembly into a circuit, all leads should be kept shorted together either by the use of metal shorting springs or by the insertion into conductive material such as "ECCOSORBDt LD26" or equivalent. 2. When devices are removed by hand from their carriers, the hand being used should be grounded by any suitable means - for example, with a metallic wristband. 3. Tips of soldering irons should be grounded. 4. Devices should never be inserted into or removed from circuits with power on. 5. Gate Voltage Rating - Never exceed the gate-voltage rating of VGEM. Exceeding the rated VGE can result in permanent damage to the oxide layer in the gate region. 6. Gate Termination - The gates of these devices are essentially capacitors. Circuits that leave the gate open-circuited or floating should be avoided. These conditions can result in turn-on of the device due to voltage buildup on the input capacitor due to leakage currents or pickup. 7. Gate Protection - These devices do not have an internal monolithic zener diode from gate to emitter. If gate protection is required an external zener is recommended. www.onsemi.com 7 HGTG30N60C3D ORDERING INFORMATION Part Number HGTG30N60C3D NOTE: Package Brand Shipping TO-247 G30N60C3D 450 Units / Tube When ordering, use the entire part number. All brand names and product names appearing in this document are registered trademarks or trademarks of their respective holders. www.onsemi.com 8 MECHANICAL CASE OUTLINE PACKAGE DIMENSIONS TO-247-3LD SHORT LEAD CASE 340CK ISSUE A A DATE 31 JAN 2019 A E P1 P A2 D2 Q E2 S B D 1 2 D1 E1 2 3 L1 A1 L b4 c (3X) b 0.25 M (2X) b2 B A M DIM (2X) e GENERIC MARKING DIAGRAM* AYWWZZ XXXXXXX XXXXXXX XXXX = Specific Device Code A = Assembly Location Y = Year WW = Work Week ZZ = Assembly Lot Code *This information is generic. Please refer to device data sheet for actual part marking. Pb-Free indicator, "G" or microdot "G", may or may not be present. Some products may not follow the Generic Marking. DOCUMENT NUMBER: DESCRIPTION: 98AON13851G TO-247-3LD SHORT LEAD A A1 A2 b b2 b4 c D D1 D2 E E1 E2 e L L1 P P1 Q S MILLIMETERS MIN NOM MAX 4.58 4.70 4.82 2.20 2.40 2.60 1.40 1.50 1.60 1.17 1.26 1.35 1.53 1.65 1.77 2.42 2.54 2.66 0.51 0.61 0.71 20.32 20.57 20.82 13.08 ~ ~ 0.51 0.93 1.35 15.37 15.62 15.87 12.81 ~ ~ 4.96 5.08 5.20 ~ 5.56 ~ 15.75 16.00 16.25 3.69 3.81 3.93 3.51 3.58 3.65 6.60 6.80 7.00 5.34 5.46 5.58 5.34 5.46 5.58 Electronic versions are uncontrolled except when accessed directly from the Document Repository. Printed versions are uncontrolled except when stamped "CONTROLLED COPY" in red. PAGE 1 OF 1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor reserves the right to make changes without further notice to any products herein. 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