©2000 Fairchild Semiconductor International Rev. A, February 2000
BD675A/677A/679A/681
NPN Epitaxial Silicon Transistor
Absolute Maximum Ratings TC=25°C unless otherwise noted
Electrical Characteristics TC=25°C unless otherwise noted
* Pulse Test: PW=300µs, duty Cycle=1.5% Pulsed
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BD675A
: BD677A
: BD679A
: BD681
45
60
80
100
V
V
V
V
VCEO Collector-Emitter Voltage : BD675A
: BD677A
: BD679A
: BD681
45
60
80
100
V
V
V
V
VEBO Emitter-Base Voltage 5 V
IC Collector Current (DC) 4 A
ICP *Collector Current (Pulse) 6 A
IB Base Current 100 mA
PC Collector Dissipation (TC=25°C) 40 W
TJ Junction Temperature 150 °C
TSTG Storage Temperature - 65 ~ 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
VCEO(sus) *Collector-Emitter Sustaining Voltage
: BD675A
: BD677A
: BD679A
: BD681
IC = 50mA , IB = 0 45
60
80
100
V
V
V
V
ICBO Collector- Base Voltage : BD675A
: BD677A
: BD679A
: BD681
VCB = 45V, IE = 0
VCB = 60V, IE = 0
VCB = 80V, IE = 0
VCB = 100V, VBE = 0
200
200
200
200
µA
µA
µA
µA
ICEO Collector Cut-off Current : BD675A
: BD677A
: BD679A
: BD681
VCE = 45V, VBE = 0
VCE = 60V, VBE = 0
VCE = 80V, VBE = 0
VCE = 100V, VBE = 0
500
500
500
500
µA
µA
µA
µA
IEBO Emitter Cut-off Current VEB = 5V, IC = 0 2 mA
hFE * DC Current Gain : BD675A/677A/679A
: BD68 1 VCE = 3V, IC = 2A
VCE = 3V, IC = 1.5A 750
750
VCE(sat) * Collector-Emitter Saturation Voltage
: BD675A/677A/679A
: BD68 1 IC = 2A, IB = 40mA
IC = 1.5A, IB = 30mA 2.8
2.5 V
V
VBE(on) * Base-Emitter ON Voltage : BD675A/677A/679A
: BD68 1 VCE = 3V, IC = 2A
VCE = 3V, IC = 1.5A 2.5
2.5 V
V
BD675A/677A/679A/681
Medium Power Linear and Switching
Applications
• Medium Power Darlington TR
• Complement to BD676A, BD678A, BD680A and BD682 respectively
1TO-126
1. Emitter 2.Collector 3.Base
©2000 Fairchild Semiconductor International
BD675A/677A/679A/681
Rev. A, February 2000
Typical Characteristics
Figure 1. DC current Gain Figure 2. Collector-Emitter Saturation Voltage
Figure 3. Base-Emitter On Voltage Figure 4. Safe Operating Area
Figure 5. Power Derating
0.1 1 10
100
1000
10000
VCE = 3V
hFE, DC CURRENT GAIN
IC[A], COLLECTOR CURRENT
0.1 1 10
0.0
0.4
0.8
1.2
1.6
2.0
2.4 Ic = 250 IB
VCE(sat)[V], SATURATION VOLTAGE
IC[A], COLLECTOR CURRENT
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2.0
0.0
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
1.8
2.0
2.2
2.4
2.6
2.8
3.0
3.2
3.4
3.6
3.8
4.0
VCE = 3V
IC[A], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
0.1
1
10
BD677A
10µs
IC(max). Pulsed
BD681
BD679A
BD675A
100µs
1ms
10ms
DC
IC(max). Co nt inuous
IC[A], COLLECTOR CURRENT
VCE[V], COLLECTOR-EMITTER VOLTAGE
0 25 50 75 100 125 150 175 200
0
10
20
30
40
50
PC[W], POWER DIS SIPATION
TC[oC], CASE TEMPERATURE
Package Demensions
©2000 Fairchild Semiconductor International Rev. A, February 2000
BD675A/677A/679A/681
Dimensions in Millimeters
3.25 ±0.20
8.00 ±0.30
ø3.20 ±0.10
0.75 ±0.10
#1
0.75 ±0.10
2.28TYP
[2.28±0.20] 2.28TYP
[2.28±0.20]
1.60 ±0.10
11.00 ±0.20
3.90 ±0.10
14.20MAX
16.10 ±0.20
13.06 ±0.30
1.75 ±0.20
(0.50)
(1.00)
0.50 +0.10
–0.05
TO-126
©2000 Fairchild Semiconductor International Rev. E
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