MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSE060
FLAT-BASE TYPE
INSULATED PACKAGE
PM100CSE060 FEATURE
a) Adopting new 4th generation planar IGBT chip, which per-
formance is improved by 1µm fine rule process.
For example, typical VCE(sat)=1.7V
b) Using new Diode which is designed to get soft reverse
recovery characteristics.
• 3φ 100A, 600V Current-sense IGBT for 15kHz switching
• Monolithic gate drive & protection logic
• Detection, protection & status indication circuits for over-
current, short-circuit, over-temperature & under-voltage
• Acoustic noise-less 11kW class inverter application
APPLICATION
General purpose inverter, servo drives and other motor controls
PACKAGE OUTLINES Dimensions in mm
1. V
UPC
2. U
P
3. V
UP1
4. V
VPC
5. V
P
6. V
VP1
7. V
WPC
8. W
P
9. V
WP1
10. V
NC
11. V
N1
12. N
C
13. U
N
14. V
N
15. W
N
16. F
O
A : DETAIL
PBT
16
15
14
13
12
11
10978654321
BPN
W V U
A
MOUNTING HOLES
10
12
16- 0.64
31.6
2-φ2.54
32.6
110
±1
95
±0.5
24.5
17.5
0.5
±0.3
3.22
2
±0.5
17
74
±0.5
89
±1
4
19.4
67.4
22
4.5
2626
2020
17.022-2.54 2-2.54 6-2.542-2.54
4-R6
6-M5NUTS
4-φ5.5
10.16 10.16 10.16
LABEL
10.6
11.6 1.6
3.22
2-2.54
φ2.54
22
21.2
–0.5
+1.0
0.64
Te r mi na l c od e
Screwing depth
Min9.0
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
VCES
±IC
±ICP
PC
Tj
Collector-Emitter Voltage
Collector Current
Collector Current (Peak)
Collector Dissipation
Junction Temperature
VD = 15V, VCIN = 15V
TC = 25°C
TC = 25°C
TC = 25°C
V
A
A
W
°C
MAXIMUM RATINGS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Symbol Parameter Condition Ratings Unit
600
100
200
328
–20 ~ +150
INTERNAL FUNCTIONS BLOCK DIAGRAM
VFO
IFO
CONTROL PART
V
mA
20
20
Supply Voltage
Input Voltage
Fault Output Supply Voltage
Fault Output Current
Symbol Parameter Condition Ratings Unit
Applied between : VUP1-VUPC
VVP1-VVPC, VWP1-VWPC, VN1-VNC
Applied between : UP-VUPC, VP-VVPC
WP-VWPC, UN • VN • WN-VNC
Applied between : FO-VNC
Sink current at FO terminal
20
20
VD
VCIN
V
V
W
P
V
WP1
V
WPC
U
N
Fo
N W V PU
V
P
V
VP1
V
VPC
U
P
V
UP1
V
UPC
W
N
V
N1
V
NC
V
N
Rfo
Th
Gnd In Fo Vcc
Gnd Si Out
Gnd In Fo Vcc
Gnd Si Out
Gnd In Fo Vcc
Gnd Si Out
Gnd In Fo Vcc
Gnd Si Out
Gnd In Fo Vcc
Gnd Si Out
Gnd In Fo Vcc
Gnd Si Out
N
C
Rfo=1.5kΩ
N
C
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
TOTAL SYSTEM
PBT
BPN
W V U
Tc65mm
2.3
2.3
3.3
2.4
0.3
1.0
3.3
1.2
1
10
Min. Typ. Max.
Collector-Emitter
Saturation Voltage
Collector-Emitter
Cutoff Current
–IC = 100A, VD = 15V, VCIN = 15V (Fig. 2)
Tj = 25°C
Tj = 125°C
ELECTRICAL CHARACTERISTICS (Tj = 25°C, unless otherwise noted)
INVERTER PART
Parameter
Symbol Tes t C o ndi tio n
VCE(sat)
ICES
VEC
ton
trr
tc(on)
toff
tc(off)
Limits
—
—
—
0.8
—
—
—
—
—
—
1.7
1.7
2.2
1.2
0.15
0.4
2.4
0.6
—
—
Tj = 25°C
Tj = 125°C
FWDi Forward Voltage
Switching Time
VD = 15V, VCIN = 15V↔0V
VCC = 300V, IC = 100A
Tj = 125°C
Inductive Load (upper and lower arm) (Fig. 3)
V
CE
= V
CES
, V
CIN
= 15V
(Fig. 4)
VD = 15V, IC = 100A
VCIN = 0V, Pulsed (Fig. 1) V
mA
V
µs
Unit
ParameterSymbol
Supply Voltage Protected by
OC & SC
Supply Voltage (Surge)
Module Case Operating
Temperatur e
Storage Temperature
Isolation Voltage
Condition
VCC(surge)
TC
Tstg
Viso
Ratings
VCC(PROT) 400
500
–20 ~ +100
–40 ~ +125
2500
Unit
V
°C
°C
Vrms
V
VD = 13.5 ~ 16.5V, Inverter Part,
Tj = 125°C Start
Applied between : P-N, Surge value or without switching
(Note-1)
60Hz, Sinusoidal, Charged part to Base, AC 1 min.
(Note-1) Tc measurement point is as shown below. (Base plate depth 3mm)
0.38
0.70
0.23
0.36
0.027
°C/W
Rth(j-c)Q
Rth(j-c)F
Rth(j-c’)Q
Rth(j-c’)F
Rth(c-f)
Inverter IGBT part (per 1 element), (Note-1)
Inverter FWDi part (per 1 element), (Note-1)
Inverter IGBT part (per 1 element), (Note-2)
Inverter FWDi part (per 1 element), (Note-2)
Case to fin, Thermal grease applied (per 1 module)
Symbol Parameter Tes t C o ndi tio n Unit
—
—
—
—
—
—
—
—
—
—
Junction to case Thermal
Resistances
THERMAL RESISTANCES
Contact Thermal Resistance
(Note-2) TC measurement point is just under the chips.
If you use this value, Rth(f-a) should be measured just under the chips.
Limits
Min. Typ. Max.
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
3.5
3.5
—
—
—
—
Main terminal screw : M5
Mounting part screw : M5
—
Symbol Parameter
Mounting torque
Mounting torque
Weight
Test Cond i t i o n Unit
N • m
N • m
g
Limits
Min. Typ. Max.
2.5
2.5
—
3.0
3.0
560
MECHANICAL RATINGS AND CHARACTERISTICS
VD = 15V, VCIN = 15V
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
ID
°C
V
mA
ms
55
18
1.8
2.3
520
430
—
—
—
125
—
12.5
—
0.01
15
—
mA
Circuit Current
Input ON Threshold Voltage
Input OFF Threshold Voltage
Over Current Trip Level
Short Circuit Trip Level
Over Current Delay Time
Over Temperature Protection
Supply Circuit Under-Voltage
Protection
Fault Output Current
Minimum Fault Output Pulse
Width
Vth(ON)
Vth(OFF)
OC
SC
toff(OC)
OT
OTr
UV
UVr
IFO(H)
IFO(L)
tFO
Trip level
Reset level
Trip level
Reset level
CONTROL PART
—
—
1.2
1.7
—
264
158
—
—
111
—
11.5
—
—
—
1.0
Parameter
Symbol Test Cond i t i o n Max.
Min. Typ. Unit
Limits
40
13
1.5
2.0
—
311
—
360
10
118
100
12.0
12.5
—
10
1.8
(Note-3) Fault output is given only when the internal OC, SC, OT & UV protection.
Fault output of OT protection operate by lower arm.
Fault output of OC, SC protection given pulse.
Fault output of OT, UV protection given pulse while over level.
Base-plate
Temperatur e d e te c t io n , VD = 15V
–20 ≤ Tj ≤ 125°C
VD = 15V, VFO = 15V (Note-3)
VD = 15V (Note-3)
V
µs
VD = 15V (Fig. 5,6)
–20≤ Tj ≤ 125°C, VD = 15V (Fig. 5,6)
VD = 15V (Fig. 5,6)
VN1-VNC
VXP1-VXPC
Tj = –20°C
Tj = 25°C
Tj = 125°C
A
A
RECOMMENDED CONDITIONS FOR USE
Recommended value Unit
Tes t C o ndi tio n
Symbol Parameter
V
Applied across P-N terminals
Applied between : VUP1-VUPC, VVP1-VVPC
VWP1-VWPC, VN1-VNC (Note-4)
Applied between : UP-VUPC, VP-VVPC, WP-VWPC
UN • VN • WN-VNC
Using Application Circuit input signal of IPM, 3φ
sinusoidal PWM VVVF inverter (Fig. 8)
For IPM’s each input signals (Fig. 7)
Supply Voltage
Control Supply Voltage
Input ON Voltage
Input OFF Voltage
PWM Input Frequency
Arm Shoot-through
Blocking Time
≤ 400
15 ±1.5
≤ 0.8
≥ 4.0
≤ 20
≥ 2.5
VCC
VCIN(ON)
VCIN(OFF)
fPWM
tdead
VD V
kHz
µs
V
(Note-4) Allowable Ripple rating of Control Voltage : dv/dt ≤ ±5V/µs, 2Vp-p
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
PRECAUTIONS FOR TESTING
1. Before appling any control supply voltage (VD), the input terminals should be pulled up by resistores, etc. to their corre-
sponding supply voltage and each input signal should be kept off state.
After this, the specified ON and OFF level setting for each input signal should be done.
2. When performing “OC” and “SC” tests, the turn-off surge voltage spike at the corresponding protection operation should not
be allowed to rise above VCES rating of the device.
(These test should not be done by using a curve tracer or its equivalent.)
10%
90%
trr
Irr
trtd (on)
tc (on) tc (off)
td (off)
V
CIN
Ic
V
CE
10%
10% 10%
90%
tf
(ton= td (on) + tr) (toff= td (off) + tf)
U,V,W, (N)
P, (U,V,W) A
Pulse
V
CE
V
CIN
(15V)
U,V,W, (N)
P, (U,V,W)
V
CIN
V
CC
I
C
I
C
I
C
OC
SC
V
CIN
t
off (OC)
U,V,W
N
V
CINN
V
CINP
V
D
V
D
P
Ic
Vcc
V
CINN
0V
0V
V
CINP
t
t
P, (U,V,W)
U,V,W, (N) U,V,W, (N)
V
D
(all)
IN
(Fo)
Fo
IN
(Fo)
V
D
(all)
V
CIN
(0V)
Ic
V V
P, (U,V,W)
V
CIN
(15V)
–Ic
P
N
N
C
S
C
S
U,V,W
Vcc
Vcc
Ic
Ic
V
D
(all)
V
D
(all)
P
U,V,W
V
CIN
V
CIN
V
CIN
(15V)
V
CIN
(15V)
Fo
IN
(Fo)
IN
(Fo)
V
D
(all)
V
D
(all)
t
dead
t
dead
t
dead
Fig. 7 Dead time measurement point example
Short Circuit Current
Over Current
Constant Current
Constant Current
Fig. 3 Switching time Test circuit and waveform
Fig. 1 V
CE(sat
) Test Fig. 2 V
EC
Test
a) Lower Arm Switching
Signal input
(Upper Arm)
Signal input
(Lower Arm)
Signal input
(Upper Arm)
Signal input
(Lower Arm)
b) Upper Arm Switching
Fig. 4 I
CES
Test
Fig. 5 OC and SC Test Fig. 6 OC and SC Test waveform
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MITSUBISHI <INTELLIGENT POWER MODULES>
PM100CSE060
FLAT-BASE TYPE
INSULATED PACKAGE
Sep. 2001
NOTES FOR STABLE AND SAFE OPERATION ;
•Design the PCB pattern to minimize wiring length between opto-coupler and IPM’s input terminal, and also to minimize the
stray capacity between the input and output wirings of opto-coupler.
•Quick opto-couplers: TPLH, TPLH ≤ 0.8µs. Use High CMR type. The line between opto-coupler and intelligent module
should be shortened as much as possible to minimize the floating capacitance.
•Slow switching opto-coupler: recommend to use at CTR = 100 ~ 200%, Input current = 8 ~ 10mA, to work in active.
•Use 4 isolated control power supplies (VD). Also, care should be taken to minimize the instantaneous voltage charge of the
power supply.
•Make inductance of DC bus line as small as possible, and minimize surge voltage using snubber capacitor between P and N
terminal.
•Use line noise filter capacitor (ex. 4.7nF) between each input AC line and ground to reject common-mode noise from AC line
and improve noise immunity of the system.
OUT
Si
GNDGND
In
Vcc
U
V
W
N
P
M
→
IF
+
–
: Interface which is the same as the U-phase
OUT
Si
GNDGND
In
Vcc
OUT
Si
GNDGND
In
Vcc
OUT
Si
GNDGND
In
Fo
Vcc
OUT
Si
GNDGND
In
Fo
TEMP
Vcc
OUT
Si
GND
GND
In
Fo
Vcc
VWP1
WP
VWPC
Th
UN
VN
VN1
WN
VNC
Rfo
Fo
VVP1
VP
VVPC
≥0.1µ
1k
≥0.1µ
≥0.1µ
20k
20k
20k
≥10µ
≥10µ
≥10µ
20k ≥10µ
≥0.1µ
VUP1
UP
VUPC
NC
NC
→
→
IF
IF
IF
5V
→
V
D
V
D
V
D
V
D
Fig. 8 Application Example Circuit
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