MMBT2907AL, SMMBT2907AL General Purpose Transistors PNP Silicon http://onsemi.com Features * These Devices are Pb-Free, Halogen Free/BFR Free and are RoHS * * COLLECTOR 3 Compliant AEC-Q101 Qualified and PPAP Capable S Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements 1 BASE 2 EMITTER MAXIMUM RATINGS Rating Symbol Value Unit Collector -Emitter Voltage VCEO -60 Vdc Collector -Base Voltage VCBO -60 Vdc Emitter -Base Voltage VEBO -5.0 Vdc IC -600 mAdc ICM -1200 mAdc Collector Current - Continuous Collector Current - Peak (Note 3) Total Device Dissipation FR- 5 Board (Note 1) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Total Device Dissipation Alumina Substrate, (Note 2) @TA = 25C Derate above 25C Thermal Resistance, Junction-to-Ambient Junction and Storage Temperature SOT-23 (TO-236AB) CASE 318 STYLE 6 1 2 MARKING DIAGRAM THERMAL CHARACTERISTICS Characteristic 3 Symbol Max Unit 225 1.8 mW mW/C 556 C/W 300 2.4 mW mW/C RJA 417 C/W TJ, Tstg -55 to +150 C PD RJA PD Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR-5 = 1.0 0.75 0.062 in. 2. Alumina = 0.4 0.3 0.024 in. 99.5% alumina. 3. Reference SOA curve. 2F M G G 1 2F = Device Code M = Date Code* G = Pb-Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION Device Package Shipping MMBT2907ALT1G SMMBT2907ALT1G SOT-23 (Pb-Free) 3000 / Tape & Reel MMBT2907ALT3G SMMBT2907ALT3G SOT-23 (Pb-Free) 10,000 / Tape & Reel For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. (c) Semiconductor Components Industries, LLC, 2011 October, 2011 - Rev. 12 1 Publication Order Number: MMBT2907ALT1/D MMBT2907AL, SMMBT2907AL ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Symbol Characteristic Min Max -60 -60 - - Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage (Note 4) (IC = -1.0 mAdc, IB = 0) (IC = -10 mAdc, IB = 0) V(BR)CEO Collector -Base Breakdown Voltage (IC = -10 Adc, IE = 0) V(BR)CBO -60 - Vdc Emitter -Base Breakdown Voltage (IE = -10 Adc, IC = 0) V(BR)EBO -5.0 - Vdc Collector Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) ICEX - -50 nAdc Collector Cutoff Current (VCB = -50 Vdc, IE = 0) (VCB = -50 Vdc, IE = 0, TA = 125C) ICBO - - -0.010 -10 - -50 75 100 100 100 50 - - - 300 - - - -0.4 -1.6 - - -1.3 -2.6 fT 200 - MHz Output Capacitance (VCB = -10 Vdc, IE = 0, f = 1.0 MHz) Cobo - 8.0 pF Input Capacitance (VEB = -2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo - 30 ton - 45 td - 10 tr - 40 toff - 100 ts - 80 tf - 30 Base Cutoff Current (VCE = -30 Vdc, VEB(off) = -0.5 Vdc) IBL Vdc Adc nAdc ON CHARACTERISTICS DC Current Gain (IC = -0.1 mAdc, VCE = -10 Vdc) (IC = -1.0 mAdc, VCE = -10 Vdc) (IC = -10 mAdc, VCE = -10 Vdc) (IC = -150 mAdc, VCE = -10 Vdc) (IC = -500 mAdc, VCE = -10 Vdc) (Note 4) hFE Collector -Emitter Saturation Voltage (Note 4) (IC = -150 mAdc, IB = -15 mAdc) (Note 4) (IC = -500 mAdc, IB = -50 mAdc) VCE(sat) Base -Emitter Saturation Voltage (Note 4) (IC = -150 mAdc, IB = -15 mAdc) (IC = -500 mAdc, IB = -50 mAdc) VBE(sat) - Vdc Vdc SMALL-SIGNAL CHARACTERISTICS Current -Gain - Bandwidth Product (Notes 4, 5), (IC = -50 mAdc, VCE = -20 Vdc, f = 100 MHz) SWITCHING CHARACTERISTICS Turn-On Time (VCC = -30 Vdc, IC = -150 mAdc, IB1 = -15 mAdc) Delay Time Rise Time Turn-Off Time (VCC = -6.0 Vdc, IC = -150 mAdc, IB1 = IB2 = -15 mAdc) Storage Time Fall Time ns 4. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%. 5. fT is defined as the frequency at which |hfe| extrapolates to unity. INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns INPUT Zo = 50 PRF = 150 PPS RISE TIME 2.0 ns P.W. < 200 ns -30 V 200 1.0 k 0 TO OSCILLOSCOPE RISE TIME 5.0 ns -6.0 V 1.0 k 1.0 k 0 50 -16 V +15 V -30 V 50 37 TO OSCILLOSCOPE RISE TIME 5.0 ns 1N916 200 ns 200 ns Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit http://onsemi.com 2 MMBT2907AL, SMMBT2907AL TYPICAL CHARACTERISTICS 1000 VCE = 10 V hFE, DC CURRENT GAIN TJ = 150C 25C 100 -55C 10 1.0 10 100 1000 IC, COLLECTOR CURRENT (mA) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 3. DC Current Gain -1.0 -0.8 IC = -1.0 mA -10 mA -100 mA -500 mA -0.6 -0.4 -0.2 0 -0.005 -0.01 -0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 IB, BASE CURRENT (mA) -2.0 -3.0 -20 -30 -5.0 -7.0 -10 -50 Figure 4. Collector Saturation Region 500 tr 100 70 50 300 VCC = -30 V IC/IB = 10 TJ = 25C tf 30 20 td @ VBE(off) = 0 V 3.0 -5.0 -7.0 -10 30 10 7.0 5.0 -5.0 -7.0 -10 2.0 V -20 -30 -50 -70 -100 IC, COLLECTOR CURRENT 100 70 50 ts = ts - 1/8 tf 20 10 7.0 5.0 VCC = -30 V IC/IB = 10 IB1 = IB2 TJ = 25C 200 t, TIME (ns) t, TIME (ns) 300 200 -200 -300 -500 Figure 5. Turn-On Time -20 -30 -50 -70 -100 -200 -300 -500 IC, COLLECTOR CURRENT (mA) Figure 6. Turn-Off Time http://onsemi.com 3 MMBT2907AL, SMMBT2907AL TYPICAL SMALL-SIGNAL Characteristics NOISE FIGURE VCE = 10 Vdc, TA = 25C 10 10 8.0 8.0 NF, NOISE FIGURE (dB) IC = -1.0 mA, Rs = 430 -500 A, Rs = 560 -50 A, Rs = 2.7 k -100 A, Rs = 1.6 k 6.0 4.0 Rs = OPTIMUM SOURCE RESISTANCE 2.0 0 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 0 C, CAPACITANCE (pF) 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k Rs, SOURCE RESISTANCE (OHMS) Figure 7. Frequency Effects Figure 8. Source Resistance Effects Ceb 10 7.0 Ccb 5.0 3.0 -0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30 50 k 400 300 200 100 80 VCE = -20 V TJ = 25C 60 40 30 20 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000 REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (mA) Figure 9. Capacitances Figure 10. Current-Gain - Bandwidth Product 1 1.1 IC/IB = 10 1.0 VBE(sat), BASE-EMITTER SATURATION VOLTAGE (V) VCE(sat), COLLECTOR-EMITTER SATURATION VOLTAGE (V) 50 f, FREQUENCY (kHz) 20 150C 25C -55C 0.1 0.01 IC = -50 A -100 A -500 A -1.0 mA 4.0 100 30 2.0 -0.1 6.0 2.0 f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) NF, NOISE FIGURE (dB) f = 1.0 kHz IC/IB = 10 0.9 -55C 0.8 25C 0.7 0.6 0.5 150C 0.4 0.3 0.001 0.01 0.1 0.2 1 0.001 0.01 0.1 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A) Figure 11. Collector Emitter Saturation Voltage vs. Collector Current Figure 12. Base Emitter Saturation Voltage vs. Collector Current http://onsemi.com 4 1 MMBT2907AL, SMMBT2907AL TYPICAL SMALL-SIGNAL Characteristics NOISE FIGURE 1.2 1.1 +0.5 VCE = 1 V 0 0.9 COEFFICIENT (mV/ C) 1.0 -55C 0.8 25C 0.7 0.6 0.5 150C 0.4 RVC for VCE(sat) -0.5 -1.0 -1.5 RVB for VBE -2.0 0.3 0.2 0.001 0.01 0.1 -2.5 -0.1 -0.2 -0.5 -1.0 -2.0 1 -5.0 -10 -20 -50 -100 -200 -500 IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (mA) Figure 13. Base Emitter Voltage vs. Collector Current Figure 14. Temperature Coefficients 10 10 ms 100 ms 1 1s Thermal Limit IC (A) VBE(on), BASE-EMITTER VOLTAGE (V) VCE = 10 Vdc, TA = 25C 1 ms 0.1 0.01 0.001 Single Pulse Test @ TA = 25C 0.01 0.1 1 10 VCE (Vdc) Figure 15. Safe Operating Area http://onsemi.com 5 100 MMBT2907AL, SMMBT2907AL PACKAGE DIMENSIONS SOT-23 (TO-236) CASE 318-08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. MILLIMETERS INCHES DIM MIN NOM MAX MIN NOM MAX A 0.89 1.00 1.11 0.035 0.040 0.044 A1 0.01 0.06 0.10 0.001 0.002 0.004 b 0.37 0.44 0.50 0.015 0.018 0.020 c 0.09 0.13 0.18 0.003 0.005 0.007 D 2.80 2.90 3.04 0.110 0.114 0.120 E 1.20 1.30 1.40 0.047 0.051 0.055 e 1.78 1.90 2.04 0.070 0.075 0.081 L 0.10 0.20 0.30 0.004 0.008 0.012 0.35 0.54 0.69 0.014 0.021 0.029 L1 HE 2.10 2.40 2.64 0.083 0.094 0.104 q 0 --- 10 0 --- 10 D SEE VIEW C 3 HE E c 1 2 e b 0.25 q A L A1 STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 SCALE 10:1 0.8 0.031 mm inches *For additional information on our Pb-Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: orderlit@onsemi.com N. American Technical Support: 800-282-9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81-3-5817-1050 http://onsemi.com 6 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMBT2907ALT1/D