MMBT2907ALT1G - ON Semiconductor

October, 2011 − Rev. 12

1Publication Order Number:

MMBT2907ALT1/D

MMBT2907AL,

SMMBT2907AL

General Purpose Transistors

PNP Silicon

Features

•These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS

Compliant

•AEC−Q101 Qualified and PPAP Capable

•S Prefix for Automotive and Other Applications Requiring Unique

Site and Control Change Requirements

MAXIMUM RATINGS

Rating Symbol Value Unit

Collector−Emitter Voltage VCEO −60 Vdc

Collector−Base Voltage VCBO −60 Vdc

Emitter−Base Voltage VEBO −5.0 Vdc

Collector Current − Continuous IC−600 mAdc

Collector Current − Peak (Note 3) ICM −1200 mAdc

THERMAL CHARACTERISTICS

Characteristic Symbol Max Unit

Total Device Dissipation FR−5 Board

(Note 1) @TA = 25°C

Derate above 25°C

PD225

1.8

mW/°C

Thermal Resistance, Junction−to−Ambient RJA 556 °C/W

Total Device Dissipation Alumina

Substrate, (Note 2) @TA = 25°C

Derate above 25°C

PD300

2.4

mW/°C

Thermal Resistance, Junction−to−Ambient RJA 417 °C/W

Junction and Storage Temperature TJ, Tstg −55 to +150 °C

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. FR−5 = 1.0  0.75  0.062 in.

2. Alumina = 0.4  0.3  0.024 in. 99.5% alumina.

3. Reference SOA curve.

2F = Device Code

M = Date Code*

G= Pb−Free Package

http://onsemi.com

COLLECTOR

BASE

EMITTER

Device Package Shipping†

ORDERING INFORMATION

MMBT2907ALT3G

SMMBT2907ALT3G

SOT−23

(Pb−Free)

†For information on tape and reel specifications,

including part orientation and tape sizes, please

refer to our Tape and Reel Packaging Specifications

Brochure, BRD8011/D.

MMBT2907ALT1G

SMMBT2907ALT1G

SOT−23

(Pb−Free)

(Note: Microdot may be in either location)

*Date Code orientation and/or overbar may

vary depending upon manufacturing location.

3000 / Tape &

Reel

10,000 / Tape &

Reel

SOT−23 (TO−236AB)

CASE 318

STYLE 6

MARKING DIAGRAM

2F M G

MMBT2907AL, SMMBT2907AL

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ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted)

Characteristic Symbol Min Max Unit

OFF CHARACTERISTICS

Collector−Emitter Breakdown Voltage (Note 4)

(IC = −1.0 mAdc, IB = 0)

(IC = −10 mAdc, IB = 0)

V(BR)CEO −60

−60

−

Vdc

Collector−Base Breakdown Voltage (IC = −10 Adc, IE = 0) V(BR)CBO −60 −Vdc

Emitter−Base Breakdown Voltage (IE = −10 Adc, IC = 0) V(BR)EBO −5.0 −Vdc

Collector Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) ICEX − −50 nAdc

Collector Cutoff Current

(VCB = −50 Vdc, IE = 0)

(VCB = −50 Vdc, IE = 0, TA = 125°C)

ICBO −

−

−0.010

−10

Adc

Base Cutoff Current (VCE = −30 Vdc, VEB(off) = −0.5 Vdc) IBL − −50 nAdc

ON CHARACTERISTICS

DC Current Gain

(IC = −0.1 mAdc, VCE = −10 Vdc)

(IC = −1.0 mAdc, VCE = −10 Vdc)

(IC = −10 mAdc, VCE = −10 Vdc)

(IC = −150 mAdc, VCE = −10 Vdc)

(IC = −500 mAdc, VCE = −10 Vdc) (Note 4)

hFE

100

−

300

−

Collector−Emitter Saturation Voltage (Note 4)

(IC = −150 mAdc, IB = −15 mAdc) (Note 4)

(IC = −500 mAdc, IB = −50 mAdc)

VCE(sat)

−

−0.4

−1.6

Vdc

Base−Emitter Saturation Voltage (Note 4)

(IC = −150 mAdc, IB = −15 mAdc)

(IC = −500 mAdc, IB = −50 mAdc)

VBE(sat)

−

−1.3

−2.6

Vdc

SMALL−SIGNAL CHARACTERISTICS

Current−Gain − Bandwidth Product (Notes 4, 5),

(IC = −50 mAdc, VCE = −20 Vdc, f = 100 MHz)

fT200 −MHz

Output Capacitance (VCB = −10 Vdc, IE = 0, f = 1.0 MHz) Cobo −8.0 pF

Input Capacitance (VEB = −2.0 Vdc, IC = 0, f = 1.0 MHz) Cibo −30

SWITCHING CHARACTERISTICS

Turn−On Time

(VCC = −30 Vdc, IC = −150 mAdc,

IB1 = −15 mAdc)

ton −45

Delay Time td−10

Rise Time tr−40

Turn−Off Time

(VCC = −6.0 Vdc, IC = −150 mAdc,

IB1 = IB2 = −15 mAdc)

(VCC = −6.0 Vdc, IC = −150 mAdc,

IB1 = IB2 = −15 mAdc)

toff −100

Storage Time ts−80

Fall Time tf−30

4. Pulse Test: Pulse Width v 300 s, Duty Cycle v 2.0%.

5. fT is defined as the frequency at which |hfe| extrapolates to unity.

-16 V

200 ns

1.0 k

200

-30 V

TO OSCILLOSCOPE

RISE TIME ≤ 5.0 ns

+15 V -6.0 V

1.0 k 37

50 1N916

1.0 k

200 ns

-30 V

TO OSCILLOSCOPE

RISE TIME ≤ 5.0 ns

INPUT

Zo = 50 

PRF = 150 PPS

RISE TIME ≤ 2.0 ns

P.W. < 200 ns

INPUT

Zo = 50 

PRF = 150 PPS

RISE TIME ≤ 2.0 ns

P.W. < 200 ns

Figure 1. Delay and Rise Time Test Circuit Figure 2. Storage and Fall Time Test Circuit

MMBT2907AL, SMMBT2907AL

http://onsemi.com

TYPICAL CHARACTERISTICS

Figure 3. DC Current Gain

IC, COLLECTOR CURRENT (mA)

100

1000

1.0

TJ = 150°C

25°C

-55°C

hFE, DC CURRENT GAIN

10 100 1000

VCE = 10 V

Figure 4. Collector Saturation Region

IB, BASE CURRENT (mA)

-0.4

-0.6

-0.8

-1.0

-0.2

V , COLLECTOR-EMITTER VOLTAGE (VOLTS)

IC = -1.0 mA

-0.005

-10 mA

-0.01

-100 mA -500 mA

-0.02 -0.03 -0.05 -0.07 -0.1 -0.2 -0.3 -0.5 -0.7 -1.0 -2.0 -3.0 -5.0 -7.0 -10 -20 -30 -50

Figure 5. Turn−On Time

IC, COLLECTOR CURRENT

300

-5.0

Figure 6. Turn−Off Time

IC, COLLECTOR CURRENT (mA)

-5.0

t, TIME (ns)

200

100

7.0

5.0

3.0

-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500

2.0 V

td @ VBE(off) = 0 V

VCC = -30 V

IC/IB = 10

TJ = 25°C

500

300

100

7.0

5.0

-7.0 -10 -20 -30 -50 -70 -100 -200 -300 -500

200

t′s = ts - 1/8 tf

VCC = -30 V

IC/IB = 10

IB1 = IB2

TJ = 25°C

MMBT2907AL, SMMBT2907AL

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TYPICAL SMALL−SIGNAL Characteristics

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

Figure 7. Frequency Effects

f, FREQUENCY (kHz)

0.01

Figure 8. Source Resistance Effects

Rs, SOURCE RESISTANCE (OHMS)

NF, NOISE FIGURE (dB)

f = 1.0 kHz

IC = -50 A

-100 A

-500 A

-1.0 mA

Rs = OPTIMUM SOURCE RESISTANCE

8.0

6.0

4.0

2.0

0.02 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 100

8.0

6.0

4.0

2.0

050 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k

IC = -1.0 mA, Rs = 430 

-500 A, Rs = 560 

-50 A, Rs = 2.7 k

-100 A, Rs = 1.6 k

Figure 9. Capacitances

REVERSE VOLTAGE (VOLTS)

Figure 10. Current−Gain − Bandwidth Product

IC, COLLECTOR CURRENT (mA)

C, CAPACITANCE (pF)

-0.1

2.0

fT, CURRENT-GAIN — BANDWIDTH PRODUCT (MHz)

7.0

5.0

3.0

-0.2 -0.3 -0.5 -1.0 -2.0 -3.0 -5.0 -10 -20 -30

400

300

200

100

-1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500 -1000

Ceb

Ccb

VCE = -20 V

TJ = 25°C

Figure 11. Collector Emitter Saturation Voltage

vs. Collector Current

Figure 12. Base Emitter Saturation Voltage vs.

Collector Current

IC, COLLECTOR CURRENT (A) IC, COLLECTOR CURRENT (A)

10.10.010.001

0.01

0.1

10.10.010.001

0.2

0.3

0.5

0.7

0.8

1.0

1.1

VCE(sat), COLLECTOR−EMITTER

SATURATION VOLTAGE (V)

VBE(sat), BASE−EMITTER

SATURATION VOLTAGE (V)

IC/IB = 10

150°C

−55°C

25°C

0.4

0.6

0.9

IC/IB = 10

150°C

−55°C

25°C

MMBT2907AL, SMMBT2907AL

http://onsemi.com

TYPICAL SMALL−SIGNAL Characteristics

NOISE FIGURE

VCE = 10 Vdc, TA = 25°C

Figure 13. Base Emitter Voltage vs. Collector

Current

IC, COLLECTOR CURRENT (A)

10.10.010.001

0.2

0.3

0.5

0.6

0.7

0.9

1.1

1.2

VBE(on), BASE−EMITTER VOLTAGE (V)

0.4

0.8

1.0

VCE = 1 V

150°C

−55°C

25°C

Figure 14. Temperature Coefficients

IC, COLLECTOR CURRENT (mA)

RVC for VCE(sat)

COEFFICIENT (mV/ °C)

+0.5

-0.5

-1.0

-1.5

-2.0

-2.5

-0.1 -0.2 -0.5 -1.0 -2.0 -5.0 -10 -20 -50 -100 -200 -500

RVB for VBE

Figure 15. Safe Operating Area

VCE (Vdc)

1001010.10.01

0.001

0.01

0.1

IC (A)

Single Pulse Test

@ TA = 25°C

Thermal Limit

100 ms

1 s

10 ms

1 ms

MMBT2907AL, SMMBT2907AL

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PACKAGE DIMENSIONS

SOT−23 (TO−236)

CASE 318−08

ISSUE AP

ǒmm

inchesǓ

SCALE 10:1

0.8

0.031

0.9

0.035

0.95

0.037

0.95

0.037

2.0

0.079

SOLDERING FOOTPRINT*

*For additional information on our Pb−Free strategy and soldering

details, please download the ON Semiconductor Soldering and

Mounting Techniques Reference Manual, SOLDERRM/D.

STYLE 6:

PIN 1. BASE

2. EMITTER

3. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M,

1982.

2. CONTROLLING DIMENSION: INCH.

3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH

THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM

THICKNESS OF BASE MATERIAL.

4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH,

PROTRUSIONS, OR GATE BURRS.

VIEW C

0.25

SEE VIEW C

DIM

MIN NOM MAX MIN

MILLIMETERS

0.89 1.00 1.11 0.035

INCHES

A1 0.01 0.06 0.10 0.001

b0.37 0.44 0.50 0.015

c0.09 0.13 0.18 0.003

D2.80 2.90 3.04 0.110

E1.20 1.30 1.40 0.047

e1.78 1.90 2.04 0.070

L0.10 0.20 0.30 0.004

0.040 0.044

0.002 0.004

0.018 0.020

0.005 0.007

0.114 0.120

0.051 0.055

0.075 0.081

0.008 0.012

NOM MAX

2.10 2.40 2.64 0.083 0.094 0.104

0.35 0.54 0.69 0.014 0.021 0.029

0−−− 10 0 −−− 10

q°°°°

ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice

to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability

arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.

“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All

operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights

nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications

intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should

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MMBT2907ALT1/D

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