MJD45H11T4 - Motorola / Freescale Semiconductor

Motorola Bipolar Power Transistor Device Data

 



DPAK For Surface Mount Applications

...for general purpose power and switching such as output or driver stages in

applications such as switching regulators, converters, and power amplifiers.

•Lead Formed for Surface Mount Application in Plastic Sleeves (No Suffix)

•Straight Lead Version in Plastic Sleeves (“–1” Suffix)

•Lead Formed Version in 16 mm Tape and Reel for Surface Mount (“T4” Suffix)

•Electrically Similar to Popular D44H/D45H Series

•Low Collector Emitter Saturation Voltage — VCE(sat) = 1.0 Volt Max @ 8.0 Amperes

•Fast Switching Speeds

•Complementary Pairs Simplifies Designs

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

MAXIMUM RATINGS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Rating

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

D44H11 or D45H11

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Voltage

ÎÎÎÎ

VCEO

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter–Base Voltage

ÎÎÎÎ

VEB

ÎÎÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Current — Continuous

Peak

ÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎ

Adc

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation

@ TC = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎ

0.16

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Total Power Dissipation (1)

@ TA = 25

Derate above 25

ÎÎÎÎ

ÎÎÎÎÎÎ

1.75

0.014

ÎÎÎ

Watts

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Operating and Storage Junction

Temperature Range

ÎÎÎÎ

TJ, Tstg

ÎÎÎÎÎÎ

–55 to 150

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

THERMAL CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Case

ÎÎÎÎ

RθJC

ÎÎÎÎÎÎ

6.25

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Thermal Resistance, Junction to Ambient (1)

ÎÎÎÎ

RθJA

ÎÎÎÎÎÎ

71.4

ÎÎÎ

C/W

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

Lead Temperature for Soldering

ÎÎÎÎ

ÎÎÎÎÎÎ

260

ÎÎÎ

(1) These ratings are applicable when surface mounted on the minimum pad size recommended.

Preferred devices are Motorola recommended choices for future use and best overall value.



SEMICONDUCTOR TECHNICAL DATA Order this document

by MJD44H11/D

 Motorola, Inc. 1995





CASE 369A–13

SILICON

POWER TRANSISTORS

8 AMPERES

80 VOLTS

20 WATTS

*Motorola Preferred Device

CASE 369–07

MINIMUM PAD SIZES

RECOMMENDED FOR

SURFACE MOUNTED

APPLICATIONS

0.243

6.172

0.063

1.6

0.118

3.0

0.07

1.8 0.165

4.191

0.190

4.826

inches





 

REV 2

 

2 Motorola Bipolar Power Transistor Device Data

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ELECTRICAL CHARACTERISTICS (TC = 25

C unless otherwise noted)

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Characteristic

ÎÎÎÎ

Symbol

ÎÎÎÎ

Min

ÎÎÎÎ

Typ

ÎÎÎÎ

Max

ÎÎÎ

Unit

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

OFF CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Sustaining Voltage

(IC = 30 mA, IB = 0)

ÎÎÎÎ

VCEO(sus)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Cutoff Current

(VCE = Rated VCEO, VBE = 0)

ÎÎÎÎ

ICES

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Emitter Cutoff Current

(VEB = 5 Vdc)

ÎÎÎÎ

IEBO

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

µA

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

ON CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.4 Adc)

ÎÎÎÎ

VCE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Base–Emitter Saturation Voltage

(IC = 8 Adc, IB = 0.8 Adc)

ÎÎÎÎ

VBE(sat)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎÎ

1.5

ÎÎÎ

Vdc

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(VCE = 1 Vdc, IC = 2 Adc)

ÎÎÎÎ

hFE

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

—

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DC Current Gain

(VCE = 1 Vdc, IC = 4 Adc)

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

DYNAMIC CHARACTERISTICS

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Collector Capacitance

(VCB = 10 Vdc, ftest = 1 MHz) MJD44H11

MJD45H11

ÎÎÎÎ

Ccb

ÎÎÎÎ

—

ÎÎÎÎ

130

230

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Gain Bandwidth Product

(IC = 0.5 Adc, VCE = 10 Vdc, f = 20 MHz) MJD44H11

MJD45H11

ÎÎÎÎ

—

ÎÎÎÎ

—

ÎÎÎ

MHz

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

SWITCHING TIMES

ÎÎÎÎ

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Delay and Rise Times

(IC = 5 Adc, IB1 = 0.5 Adc) MJD44H11

MJD45H11

ÎÎÎÎ

td + tr

ÎÎÎÎ

—

ÎÎÎÎ

300

135

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Storage Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11

MJD45H11

ÎÎÎÎ

—

ÎÎÎÎ

500

ÎÎÎÎ

—

ÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ

Fall Time

(IC = 5 Adc, IB1 = IB2 = 0.5 Adc) MJD44H11

MJD45H11

ÎÎÎÎ

—

ÎÎÎÎ

140

100

ÎÎÎÎ

—

ÎÎÎ

 

Motorola Bipolar Power Transistor Device Data

t, TIME (ms)

0.01 1 k

0.3

0.2

0.07

r(t), EFFECTIVE TRANSIENT THERMAL

JC(t) = r(t) R

JC = 6.25

C/W MAX

D CURVES APPLY FOR POWER

PULSE TRAIN SHOWN

READ TIME AT t1

TJ(pk) – TC = P(pk)

JC(t)

P(pk)

t1t2

DUTY CYCLE, D = t1/t2

0.01

RESISTANCE (NORMALIZED)

0.7

Figure 1. Thermal Response

0.5

0.1

0.05

0.03

0.02

0.02 0.03 0.05 0.1 0.2 0.3 0.5 1 2 3 5 10 20 30 50 100 200 300 500

0.2

SINGLE PULSE

D = 0.5

0.1

0.02

0.01

0.05

IC, COLLECTOR CURRENT (AMP)

1VCE, COLLECTOR–EMITTER VOLTAGE (VOLTS)

0.02 3 100

0.5

0.1

THERMAL LIMIT @ TC = 25

WIRE BOND LIMIT

5 7 20 7010

100

0.05

0.3

5030

Figure 2. Maximum Forward Bias

Safe Operating Area

1 ms

500

5 ms

There are two limitations on the power handling ability of a

transistor: average junction temperature and second break-

down. Safe operating area curves indicate IC – VCE limits of

the transistor that must be observed for reliable operation;

i.e., the transistor must not be subjected to greater dissipa-

tion than the curves indicate.

The data of Figure 2 is based on TJ(pk) = 150

C; TC is

variable depending on conditions. Second breakdown pulse

limits are valid for duty cycles to 10% provided TJ(pk)

150

C. TJ(pk) may be calculated from the data in Fig-

ure 1. At high case temperatures, thermal limitations will re-

duce the power that can be handled to values less than the

limitations imposed by second breakdown.

T, TEMPERATURE (

050 75 100 125 150

PD, POWER DISSIPATION (WATTS)

2.5

1.5

0.5

TATC

Figure 3. Power Derating

SURFACE

MOUNT

 

4 Motorola Bipolar Power Transistor Device Data

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

VCE = 4 V

TJ = 125

–40

1000

0.1

Figure 4. MJD44H11 DC Current Gain

10 1 10

100

Figure 5. MJD45H11 DC Current Gain

Figure 6. MJD44H11 Current Gain

versus Temperature Figure 7. MJD45H11 Current Gain

versus Temperature

IC/IB = 10

TJ = 25

0.1

Figure 8. MJD44H11 On–Voltages

IC, COLLECTOR CURRENT (AMPS)

0.8

SATURATION VOLTAGE (VOLTS)

1.2

0.4

0.6

0.2

1 10

TJ = 25

Figure 9. MJD45H11 On–Voltages

VCE = 1 V

IC/IB = 10

TJ = 25

0.1 IC, COLLECTOR CURRENT (AMPS)

0.8

SATURATION VOLTAGE (VOLTS)

1.2

0.4

0.6

0.2

1 10

hFE, DC CURRENT GAIN

1000

0.1

10 1 10

100

VCE = 1 V

IC, COLLECTOR CURRENT (AMPS)

hFE, DC CURRENT GAIN

VCE = 4 V

1000

0.1

10 1 10

100

TJ = 25

1 V

TJ = 125

–40

hFE, DC CURRENT GAIN

1000

0.1

10 1 10

100

VCE = 1 V

VBE(sat)

VCE(sat)

VBE(sat)

VCE(sat)

 

Motorola Bipolar Power Transistor Device Data

PACKAGE DIMENSIONS

CASE 369A–13

ISSUE W

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

123

–T–

SEATING

PLANE

GD3 PL

0.13 (0.005) T

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.090 BSC 2.29 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.350 0.380 8.89 9.65

R0.175 0.215 4.45 5.46

S0.050 0.090 1.27 2.28

V0.030 0.050 0.77 1.27

CASE 369–07

ISSUE K

STYLE 1:

PIN 1. BASE

2. COLLECTOR

3. EMITTER

4. COLLECTOR

2 PL

0.13 (0.005) T

–T–

SEATING

PLANE

DIM MIN MAX MIN MAX

MILLIMETERSINCHES

A0.235 0.250 5.97 6.35

B0.250 0.265 6.35 6.73

C0.086 0.094 2.19 2.38

D0.027 0.035 0.69 0.88

E0.033 0.040 0.84 1.01

F0.037 0.047 0.94 1.19

G0.180 BSC 4.58 BSC

H0.034 0.040 0.87 1.01

J0.018 0.023 0.46 0.58

K0.102 0.114 2.60 2.89

L0.090 BSC 2.29 BSC

R0.175 0.215 4.45 5.46

S0.020 0.050 0.51 1.27

U0.020 ––– 0.51 –––

V0.030 0.050 0.77 1.27

Z0.138 ––– 3.51 –––

NOTES:

1. DIMENSIONING AND TOLERANCING PER ANSI

Y14.5M, 1982.

2. CONTROLLING DIMENSION: INCH.

1 2 3

 

6 Motorola Bipolar Power Transistor Device Data

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MJD44H11/D

*MJD44H11/D*

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