AiAAMOSPEC SWITCHMODE SERIES NPN POWER TRANSISTORS .. designed for use in high-voltage, high-speed, power switching in inductive circuit, and switchmode applications such as switching regulator's, converters. FEATURES: *Collector-Emitter Sustaining Voltage- = 400 V (Min) * Cole miter Saturation Voltage - Voe;sat) = 1-2 V (Max.) @ Io = 4.0A, lp = 0.8A * Switching Time - t, = 1.0 us (Max.) @ |, =5.0A MAXIMUM RATINGS NPN 2802625 10 AMPERE SILICON POWER TRANASISTORS 400 VOLTS 80 WATTS SF TO-247(3P) oN + 0 [re St I, wl gL. PIN 1.BASE Characteristic Symbol 2802625 Unit Collector-Emitter Voltage Veeo 400 V Collector-Base Voltage Vego 450 Vv Emitter-Base Voltage Veso 7.0 Vv Collector Current - Continuous le 10 A - Peak lom 20 Base current lp 3.0 A Total Power Dissipation @T, = 25C Pp 80 Ww Derate above 25C 0.64 wrc Operating and Storage Junction Ty .Tst c Temperature Range -55 to +150 THERMAL CHARACTERISTICS Characteristic Symbol Max Unit Thermal Resistance Junction to Case Re jc 1.56 CAW FIGURE -1 POWER DERATING $8as > N Bb oOo oOo Oo P, , POWER DISSIPATION(WATTS) Q Qo 0 25 50 15 100 125 150 To, TEMPERATURE(C) 2.COLLECTOR 3.EMITTER DIM MILLIMETERS MIN MAX A 20.63 | 22.38 B 15.38 | 16.20 Cc 1.90 2.70 D 5.10 6.10 E 14.81 15.22 F 11.72 | 12.84 G 420 450 H 1.82 2.46 | 2.92 3.23 J 0.89 153 K 5.26 5.66 L 18.50 | 21.50 M 4.68 5.36 N 2.40 2.80 O 3.25 3.65 P 0.55 0.702SC2625 NPN ELECTRICAL CHARACTERISTICS ( T, = 25C unless otherwise noted ) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector-Emitter Breakdown Voltage ViprycEo V (1,= 10 mA, 1,=0) 400 Collector-Base Breakdown Voltage Vieryceo Vv (I,= 1.0 mA, 1,=0) 450 Collector Cutoff Current lepo mA ( Veg= 450 V, I= 0) 1.0 Emitter Cutoff Current lego uA (Veg= 7.0 V, Ip= 0) 100 ON CHARACTERISTICS (1) DC Current Gain (lg= 4.0 AVoe= 5.0 V) hFE 10 Collector-Emitter Saturation Voltage Vee;sat) V ( Ip= 4.0 A,I,= 800 mA ) 1.2 Base-Emitter Saturation Voltage Vee;(sat) Vv (Ip= 4.0 A,lp= 800 mA ) 1.6 SWITCHING CHARACTERISTICS On Time Veco 150 V, I_= 5.0 A t on 1.0 us Storage Time lai=-lpa= 1.0A t. 2.5 us R,=30 ohm Fall Time ty 1.0 us (1) Pulse Test: Pulse Width =300 us,Duty Cycle = 2.0%2S8C2625 NPN Ic - Vee kc , COLLECTOR CURRENT (A) *0 10 12 14 Vee , COLLECTOR-EMITTER VOLTAGE (V) SWITCHING TIME 5.0 gz Ww F 0.1 0.3 05 1.0 20 5.0 10 ky, COLLECTOR CURRENT (AMP) ACTIVE-REGION SAFE OPERATING AREA (SOA) E : PJ o 5 5 4 ~~--Bondng Wre Lint o Second Breakdown Q ~ Thermal Linited at Tox28C 1 2 5 10 20 50 4100 = 200 VGE , COLLECTOR EMITTER VOLTAGE (VOLTS) DC CURRENT GAIN 50 Ee z Wi % 4 > oO 10 a a) 2 1603 0.06 01 0.2 05 1.0 2.0 5.0 40 le , COLLECTOR CURRENT (AMP) ON" VOLTAGES 3.0 20 4.0 @ 05 2 & we 0.2 2 5 oo Vee sat) @ lolla=5 S > 0.02 0.01 0.03 0.05 04 0.2 5.0 10 05 1.0 tc , COLLECTOR CURRENT (aie There are two limitation on the power handling ability of a transistor:average junction temperature and second breakdown safe operating area curves indicate | |c-Vce limits of the transistor that must be observed for reliable operation i.e., the transistor must not be subjected to greater dissipation than curves indicate. The data of SOA curve is base on T ypiq=150 C; Tc is variable depending on conditions. second breakdown pulse limits are valid for duty cycles to 10% provided TpgS150C,At high case temperatures, thermal limita - tion will reduce the power that can be handied to values less than the limitations imposed by second breakdown.