BC846 - BC850 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC846 - BC850 Rev. B1 1
April 2011
BC846 - BC850
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for automatic insertion in thick and thin-film circuits
• Low Noise: BC849, BC850
•Complement to BC856 ... BC860
Absolute Maximum Ratings* Ta = 25°C unless otherwise noted
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta = 25°C unless otherwise noted
* Pulse Test: Pulse Width≤300μs, Duty Cycle≤2%
Symbol Parameter Value Units
VCBO Collector-Base Voltage : BC846
: BC847/850
: BC848/849
80
50
30
V
V
V
VCEO Collector-Emitter Voltage : BC846
: BC847/850
: BC848/849
65
45
30
V
V
V
VEBO Emitter-Base Voltage : BC846/847
: BC848/849/850 6
5V
V
ICCollector Current (DC) 100 mA
PCCollector Power Dissipation 310 mW
TJJunction Temp erat ure 150 °C
TSTG Storage Temperature -65 to 150 °C
Symbol Parameter Test Condition Min. Typ. Max. Units
ICBO Collector Cut-off Current VCB=30V, IE=0 15 nA
hFE DC Current Gain VCE=5V, IC=2mA 110 800
VCE (sat) Collector-Emitter Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA 90
200 250
600 mV
mV
VBE (sat) Collector-Base Saturation Voltage IC=10mA, IB=0.5mA
IC=100mA, IB=5mA 700
900 mV
mV
VBE (on) Base-Emitter On Voltage VCE=5V, IC=2mA
VCE=5V, IC=10mA 580 660 700
720 mV
mV
fTCurrent Gain Bandwidth Product VCE=5V, IC=10mA, f=100MHz 300 MHz
Cob Output Capacitance VCB=10V, IE=0, f=1MHz 3.5 6 pF
Cib Input Capaci tance VEB=0.5V, IC=0, f=1MHz 9 pF
NF Noise Figure
: BC846/847/848
: BC849/850 VCE= 5V, IC= 200μA
RG=2KΩ, f=1KHz 2
1.2 10
4dB
dB
: BC849
: BC850 VCE= 5V, IC= 200μA
RG=2KΩ, f=30~15000Hz 1.4
1.4 4
3dB
dB
1. Base 2. Emitter 3. Collector
SOT-23
1
2
3
BC846 - BC850 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC846 - BC850 Rev. B1 2
hFE Classification
Ordering Information
Note1 : Affix “-A,-B,-C” means hFE classification.
Affix “-M” means SOT-23 package.
Affix “-TF” means the tape & reel type packing.
Classification A B C
hFE 110 ~ 220 200 ~ 450 420 ~ 800
Device(note1) Device Marking Package Packing Method Qty(pcs) Pin Difinitions
BC846AMTF 8AA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC846BMTF 8AB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC846CMTF 8AC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC847AMTF 8BA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC847BMTF 8BB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC847CMTF 8BC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC848AMTF 8CA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC848BMTF 8CB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC848CMTF 8CC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC849AMTF 8DA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC849BMTF 8DB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC849CMTF 8DC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC850AMTF 8EA SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC850BMTF 8EB SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC850CMTF 8EC SOT-23 Tape & Reel 3000 1.Base 2.Emitter 3.Collector
BC846 - BC850 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC846 - BC850 Rev. B1 3
Typical Performance Characteristics
Figure 1. Static Characteristic Figure 2. DC current Gain
Figure 3. Base-Emitter Saturation Voltage
Collector-Emitter Saturation Voltage Figure 4. Base-Emitter On Voltage
Figure 5. Collector Output Capacitance Figure 6. Current Gain Bandwidth Product
0 4 8 121620
0
20
40
60
80
100
IB = 50 μA
IB = 100μA
IB = 150μA
IB = 200μA
IB = 250μA
IB = 300 μA
IB = 350μA
IB = 400μA
IC[mA], COLLECTOR CURRENT
VCE[V], COLLECT OR-EMIT T E R VOLTAGE
1 10 100 1000
10
100
1000
10000
VCE = 5V
hFE, DC CURRENT GAIN
IC[mA], COLLECTOR CURRENT
1 10 100 1000
10
100
1000
10000
IC = 10 IB
VCE(sat)
VBE(sat)
VBE(sat), VCE(sat)[V], SATURATION VOLTAGE
IC[mA], COLLECTOR CURRENT
0.0 0.2 0.4 0.6 0.8 1.0 1.2
0.1
1
10
100
VCE = 2V
IC[mA], COLLECTOR CURRENT
VBE[V], BASE-EMITTER VOLTAGE
1 10 100 1000
0.1
1
10
100
f=1MHz
Cob[pF], CAPACITANCE
VCB[V], COLLECTOR-BASE VOLTAGE
0.1 1 10 100
1
10
100
1000
VCE=5V
fT[MHz], CURRENT GAIN-BANDWIDTH PRODUCT
IC[mA], COLLECTOR CURRENT
BC846 - BC850 — NPN Epitaxial Silicon Transistor
© 2011 Fairchild Semiconductor Corporation www.fairchildsemi.com
BC846 - BC850 Rev. B1 4
Physical Dimensions
SOT-23
Dimensions in Millimeters
© Fairchild Semiconductor Corporation www.fairchildsemi.com
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Rev. I53