TECHNICAL DATA
PNP HIGH POWER SILICON TRANSISTOR
Qualified per MIL-PRF-19500/433
Devices Qualified Level
2N4399 2N5745
JANTX
JANTXV
MAXIMUM RATINGS
Ratings Symbol 2N4399 2N5745 Unit
Collector-Emitter Voltage VCEO 60 80 Vdc
Collector-Base Voltage VCBO 60 80 Vdc
Emitter-Base Voltage VEBO 5.0 Vdc
Base Current IB 7.5 Adc
Collector Current IC 30 20 Adc
Total Power Dissipation @ TA =+ 250C (1)
@ TC = +1000C (2) PT 5.0
115 W
W
Operating & Storage Junction Temperature Range TJ, Tstg -55 to +200 0C
THERMAL CHARACTERISTICS
Characteristics Symbol Max. Unit
Thermal Resistance, Junction-to-Case
Junction-to-Ambient
RθJC
RθJA
3
0.875
35
0C/W
1) Derate linearly @ 28.57 mW/0C for TA > +250C
2) Derate linearly @ 1.15 W/0C for TC > +1000C
*See appendix A for
package outline
ELECTRICAL CHARACTERISTICS (TA = 250C unless otherwise noted)
Characteristics Symbol Min. Max. Unit
OFF CHARACTERISTICS
Collector-Emitter Breakdown Voltage
IC = 200 mAdc 2N4399
2N5745 V(BR)CEO
60
80
Vdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc 2N4399
VCE = 80 Vdc 2N5745 ICEO
100
100 µAdc
Collector-Emitter Cutoff Current
VCE = 60 Vdc, VBE = 1.5 Vdc 2N4399
VCE = 80 Vdc, VBE = 1.5 Vdc 2N5745 ICEX
5.0
5.0 µAdc
Emitter-Base Cutoff Current
VEB = 5.0 Vdc IEBO 5.0 µAdc
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 1 of 2
TO-3*
(TO-204AA)
2N4399, 2N5745 JAN SERIES
ELECTRICAL CHARACTERISTICS (con’t)
Characteristics Symbol Min. Max. Unit
ON CHARACTERISTICS (3)
Forward-Current Transfer Ratio
IC = 1.0 Adc, VCE = 2.0 Vdc
IC = 15 Adc, VCE = 2.0 Vdc 2N4399
IC = 10 Adc, VCE = 2.0 Vdc 2N5745
IC = 30 Adc, VCE = 5.0 Vdc 2N4399
IC = 20 Adc, VCE = 5.0 Vdc 2N5745
hFE
40
15
15
5.0
5.0
425
60
60
Collector-Emitter Saturation Voltage
IC = 5.0 Adc, IB = 0.5 Adc
IC = 10 Adc, IB = 1.0 Adc 2N4399
2N5745
VCE(sat)
0.55
0.75
1.0
Vdc
Base-Emitter Saturation Voltage
IC = 10 Adc, IB = 1.0 Adc
IC = 15 Adc, IB = 1.5 Adc 2N4399
2N5745
VBE(sat)
1.7
1.8
2.0
Vdc
DYNAMIC CHARACTERISTICS
Magnitude of Common Emitter Small-Signal Short-Circuit
Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz hfe 4.0 40
Small-Signal Short-Circuit Forward Current Transfer Ratio
IC = 1.0 Adc, VCE = 10 Vdc, f = 1.0 MHz hfe 40 425
Output Capacitance
VCB = 10 Vdc, IE = 0, 100 kHz ≤ f ≤ 1.0 MHz Cobo 1000 pF
SAFE OPERATING AREA
DC Tests
TC = +250C, 1 Cycle, t = 1.0 s
Test 1
VCE = 6.67 Vdc, IC = 30 Adc 2N4399
VCE = 10 Vdc, IC = 20 Adc 2N5745
Test 2
VCE = 20 Vdc, IC = 10 Adc All Types
Test 3
VCE = 40 Vdc, IC = 3.0 Adc All Types
Test 4
VCE = 50 Vdc, IC = 600 mAdc 2N4399
VCE = 60 Vdc, IC = 600 mAdc 2N5745
(3) Pulse Test: Pulse Width = 300µs, Duty Cycle ≤ 2.0%.
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 794-1666 / Fax: (978) 689-0803
120101
Page 2 of 2
