VS-HFA16TB120SPbF www.vishay.com Vishay Semiconductors HEXFRED(R) Ultrafast Soft Recovery Diode, 16 A FEATURES * * * * Ultrafast and ultrasoft recovery Very low IRRM and Qrr Specified at operating conditions Meets MSL level 1, per J-STD-020, LF maximum peak of 260 C * Designed and qualified for industrial level * Material categorization: for definitions of compliance please see www.vishay.com/doc?99912 TO-263AB (D2PAK) 2 BENEFITS 1 N/C * * * * * 3 Anode Reduced RFI and EMI Reduced power loss in diode and switching transistor Higher frequency operation Reduced snubbing Reduced parts count DESCRIPTION PRODUCT SUMMARY Package TO-263AB (D2PAK) IF(AV) 16 A VR 1200 V VF at IF 2.3 V trr (typ.) 30 ns TJ max. 150 C Diode variation Single die VS-HFA16TB120SPbF is a state of the art ultrafast recovery diode. Employing the latest in epitaxial construction and advanced processing techniques it features a superb combination of characteristics which result in performance which is unsurpassed by any rectifier previously available. With basic ratings of 1200 V and 16 A continuous current, the VS-HFA16TB120SPbF is especially well suited for use as the companion diode for IGBTs and MOSFETs. In addition to ultrafast recovery time, the HEXFRED(R) product line features extremely low values of peak recovery current (IRRM) and does not exhibit any tendency to "snap-off" during the tb portion of recovery. The HEXFRED features combine to offer designers a rectifier with lower noise and significantly lower switching losses in both the diode and the switching transistor. These HEXFRED advantages can help to significantly reduce snubbing, component count and heatsink sizes. The HEXFRED VS-HFA16TB120SPbF is ideally suited for applications in power supplies and power conversion systems (such as inverters), motor drives, and many other similar applications where high speed, high efficiency is needed. ABSOLUTE MAXIMUM RATINGS PARAMETER SYMBOL Cathode to anode voltage VR Maximum continuous forward current IF TEST CONDITIONS TC = 100 C MAX. UNITS 1200 V 16 Single pulse forward current IFSM 190 Maximum repetitive forward current IFRM 64 Maximum power dissipation Operating junction and storage temperature range PD TJ, TStg TC = 25 C 151 TC = 100 C 60 -55 to +150 A W C Revision: 26-Feb-16 Document Number: 94594 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TB120SPbF www.vishay.com Vishay Semiconductors ELECTRICAL SPECIFICATIONS (TJ = 25 C unless otherwise specified) PARAMETER Cathode to anode breakdown voltage SYMBOL VBR TEST CONDITIONS IR = 100 A IF = 16 A Maximum forward voltage VFM IF = 32 A See fig. 1 IF = 16 A, TJ = 125 C Maximum reverse leakage current IRM Junction capacitance CT VR = 200 V Series inductance LS Measured lead to lead 5 mm from package body VR = VR rated TJ = 125 C, VR = 0.8 x VR rated See fig. 2 See fig. 3 MIN. TYP. MAX. UNITS 1200 - - - 2.5 3.0 - 3.2 3.93 - 2.3 2.7 - 0.75 20 - 375 2000 - 27 40 pF - 8.0 - nH UNITS V A DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 C unless otherwise specified) PARAMETER Reverse recovery time See fig. 5 and 10 SYMBOL MIN. TYP. MAX. trr IF = 1.0 A, dIF/dt = 200 A/s, VR = 30 V TEST CONDITIONS - 30 - trr1 TJ = 25 C - 90 135 ns trr2 TJ = 125 C - 164 245 IRRM1 TJ = 25 C - 5.8 10 IRRM2 TJ = 125 C - 8.3 15 Reverse recovery charge See fig. 7 Qrr1 TJ = 25 C - 260 675 Qrr2 TJ = 125 C - 680 1838 Peak rate of fall of recovery current during tb See fig. 8 dI(rec)M/dt1 TJ = 25 C - 120 - dI(rec)M/dt2 TJ = 125 C - 76 - MIN. TYP. MAX. UNITS - - 300 C - - 0.83 - - 80 - 2.0 - g - 0.07 - oz. Peak recovery current See fig. 6 IF = 16 A dIF/dt = 200 A/s VR = 200 V A nC A/s THERMAL - MECHANICAL SPECIFICATIONS PARAMETER SYMBOL Lead temperature Tlead Thermal resistance, junction to case RthJC Thermal resistance, junction to ambient RthJA TEST CONDITIONS 0.063" from case (1.6 mm) for 10 s K/W Typical socket mount Weight Marking device Case style TO-263AB (D2PAK) HFA16TB120S Revision: 26-Feb-16 Document Number: 94594 2 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TB120SPbF Vishay Semiconductors 1000 100 TJ = 150 C IR - Reverse Current (A) IF - Instantaneous Forward Current (A) www.vishay.com TJ = 150 C TJ = 125 C TJ = 25 C 10 1 100 TJ = 125 C 10 1 TJ = 25 C 0.1 0.01 0.1 0 2 4 6 0 8 200 400 600 800 1000 1200 VFM - Forward Voltage Drop (V) VR - Reverse Voltage (V) Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous Forward Current (Per Leg) Fig. 2 - Typical Reverse Current vs. Reverse Voltage (Per Leg) CT - Junction Capacitance (pF) 1000 100 TJ = 25 C 10 1 1 10 100 1000 10 000 VR - Reverse Voltage (V) Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg) ZthJC - Thermal Response 1 0.1 Single pulse (thermal response) D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01 PDM t1 t2 Notes: 1. Duty factor D = t1/t2 2. Peak TJ = PDM x ZthJC + TC 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 t1 - Rectangular Pulse Duration (s) Fig. 4 - Maximum Thermal Impedance ZthJC Characteristics (Per Leg) Revision: 26-Feb-16 Document Number: 94594 3 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TB120SPbF www.vishay.com Vishay Semiconductors 270 220 1600 VR = 200 V TJ = 125 C TJ = 25 C 1400 1200 IF = 16 A IF = 8 A 170 Qrr (nC) trr (ns) VR = 200 V TJ = 125 C TJ = 25 C 120 IF = 16 A IF = 8 A 1000 800 600 400 70 200 20 100 0 100 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg) 30 10 000 VR = 200 V TJ = 125 C TJ = 25 C dI(rec)M/dt (A/s) 25 20 Irr (A) 1000 15 IF = 16 A IF = 8 A 10 IF = 16 A IF = 8 A 1000 100 VR = 200 V TJ = 125 C TJ = 25 C 5 0 100 1000 10 100 1000 dIF/dt (A/s) dIF/dt (A/s) Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) Fig. 8 - Typical dI(rec)M/dt vs. dIF/dt (Per Leg) Revision: 26-Feb-16 Document Number: 94594 4 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TB120SPbF www.vishay.com Vishay Semiconductors VR = 200 V 0.01 L = 70 H D.U.T. dIF/dt adjust D IRFP250 G S Fig. 9 - Reverse Recovery Parameter Test Circuit (3) trr IF ta tb 0 Qrr (2) IRRM (4) 0.5 IRRM dI(rec)M/dt (5) 0.75 IRRM (1) dIF/dt (1) dIF/dt - rate of change of current through zero crossing (2) IRRM - peak reverse recovery current (3) trr - reverse recovery time measured from zero crossing point of negative going IF to point where a line passing through 0.75 IRRM and 0.50 IRRM extrapolated to zero current. (4) Qrr - area under curve defined by trr and IRRM Qrr = trr x IRRM 2 (5) dI(rec)M/dt - peak rate of change of current during tb portion of trr Fig. 10 - Reverse Recovery Waveform and Definitions Revision: 26-Feb-16 Document Number: 94594 5 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 VS-HFA16TB120SPbF www.vishay.com Vishay Semiconductors ORDERING INFORMATION TABLE Device code VS- HF A 16 TB 120 S 1 2 3 4 5 6 7 TRL PbF 8 9 1 - Vishay Semiconductors product 2 - HEXFRED(R) family 3 - Process designator: A = electron irradiated 4 - Current rating (16 = 16 A) 5 - Package outline (TB = TO-220, 2 leads) 6 - Voltage rating (120 = 1200 V) 7 - S = D2PAK 8 - 9 - * None = tube * TRL = tape and reel (left oriented) * TRR = tape and reel (right oriented) * PbF = lead (Pb)-free, for tube packaged * P = lead (Pb)-free, for tape and reel packaged ORDERING INFORMATION (Example) PREFERRED P/N QUANTITY PER TUBE MINIMUM ORDER QUANTITY PACKAGING DESCRIPTION VS-HFA16TB120SPBF 50 1000 Antistatic plastic tube VS-HFA16TB120STRRP 800 800 13" diameter reel VS-HFA16TB120STRLP 800 800 13" diameter reel LINKS TO RELATED DOCUMENTS Dimensions www.vishay.com/doc?95046 Part marking information www.vishay.com/doc?95054 Packaging information www.vishay.com/doc?95032 Revision: 26-Feb-16 Document Number: 94594 6 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Outline Dimensions www.vishay.com Vishay Semiconductors D2PAK DIMENSIONS in millimeters and inches Conforms to JEDEC(R) outline D2 PAK (SMD-220) (2)(3) E B Pad layout A A (E) c2 11.00 MIN. (0.43) A (3) L1 4 9.65 MIN. (0.38) (D1) (3) Detail A D H 1 2 17.90 (0.70) 15.00 (0.625) (2) 3 3.81 MIN. (0.15) L2 B B 2.32 MIN. (0.08) A 2 x b2 c 2.64 (0.103) 2.41 (0.096) (3) E1 C View A - A 2xb 0.004 M B 0.010 M A M B Plating Base Metal (4) b1, b3 H 2x e Gauge plane c1 (4) (c) B 0 to 8 Seating plane L3 Lead tip A1 L (b, b2) L4 Section B - B and C - C Scale: None Detail "A" Rotated 90 CW Scale: 8:1 SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES SYMBOL MILLIMETERS MIN. MAX. INCHES MIN. MAX. NOTES A 4.06 4.83 0.160 0.190 D1 6.86 8.00 0.270 0.315 3 A1 0.00 0.254 0.000 0.010 E 9.65 10.67 0.380 0.420 2, 3 E1 7.90 8.80 0.311 0.346 3 b 0.51 0.99 0.020 0.039 b1 0.51 0.89 0.020 0.035 b2 1.14 1.78 0.045 0.070 b3 1.14 1.73 0.045 0.068 c 0.38 0.74 0.015 0.029 c1 0.38 0.58 0.015 0.023 c2 1.14 1.65 0.045 0.065 D 8.51 9.65 0.335 0.380 4 e 2.54 BSC 0.100 BSC H 14.61 15.88 0.575 0.625 4 L 1.78 2.79 0.070 0.110 L1 - 1.65 - 0.066 4 L2 1.27 1.78 0.050 0.070 2 L4 L3 0.25 BSC 4.78 5.28 3 0.010 BSC 0.188 0.208 Notes (1) Dimensioning and tolerancing per ASME Y14.5 M-1994 (2) Dimension D and E do not include mold flash. Mold flash shall not exceed 0.127 mm (0.005") per side. These dimensions are measured at the outmost extremes of the plastic body (3) Thermal pad contour optional within dimension E, L1, D1 and E1 (4) Dimension b1 and c1 apply to base metal only (5) Datum A and B to be determined at datum plane H (6) Controlling dimension: inch (7) Outline conforms to JEDEC(R) outline TO-263AB Revision: 08-Jul-15 Document Number: 95046 1 For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. 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Statements regarding the suitability of products for certain types of applications are based on Vishay's knowledge of typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements about the suitability of products for a particular application. It is the customer's responsibility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over time. All operating parameters, including typical parameters, must be validated for each customer application by the customer's technical experts. Product specifications do not expand or otherwise modify Vishay's terms and conditions of purchase, including but not limited to the warranty expressed therein. Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the Vishay product could result in personal injury or death. Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. Revision: 13-Jun-16 1 Document Number: 91000