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Old Company Name in Catalogs and Other Documents
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April 1st, 2010
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Rev.4.00 Jun 22, 2006 page 1 of 6
RQK0601AGDQS
Silicon N Channel MOS FET
Power Switching REJ03G0575-0400
Rev.4.00
Jun 22, 2006
Features
• Low on-resistance
RDS(on) = 56 mΩ typ (VGS = 10 V, ID = 2.5 A)
• Low drive current
• High speed switching
• 4.5 V gate drive
Outline
RENESAS package code: PLZZ0004CA-A
(Package name: UPAK
)
R
1. Gate
2. Drain
3. Source
4. Drain
1
2
3
4
D
2, 4
G1
S
3
Note: Marking is “AG”.
*UPAK is a trademark of Renesas Technology Corp.
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage VDSS 60 V
Gate to source voltage VGSS ±20 V
Drain current ID 5 A
Drain peak current ID (pulse)Note1 7.3 A
Body - drain diode reverse dr ain current IDR 5 A
Channel dissipation Pch Note2 1.5 W
Channel dissipation Pch (pulse)Note1 5 W
Channel temperature Tch 150 °C
Storage temperature Tstg –55 to +150 °C
Notes: 1. PW ≤ 1 s, duty cycle ≤ 1%
2. When using the glass epoxy board (FR-4: 40 x 40 x 1 mm)
RQK0601AGDQS
Rev.4.00 Jun 22, 2006 page 2 of 6
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V(BR)DSS 60 — — V ID = 10 mA, VGS = 0
Gate to source breakdown voltage V(BR)GSS ±20 — — V IG = ±100 µA, VDS = 0
Gate to source leak current IGSS — — ±10 µA VGS = ±16 V, VDS = 0
Drain to source leak current IDSS — — 1 µA VDS = 60 V, VGS = 0
Gate to source cutoff voltage VGS(off) 1.0 — 2.0 V VDS = 10 V, ID = 1 mA
RDS(on) — 56 70 mΩ I
D = 2.5 A, VGS = 10 VNote3 Drain to source on state resistance RDS(on) — 65 91 mΩ I
D = 2.5 A, VGS = 4.5 VNote3
Forward transfer admittance |yfs| 5.2 8.7 — S ID = 2.5 A, VDS = 10 V Note3
Input capacitance Ciss — 540 — pF
Output capacitance Coss — 75 — pF
Reverse transfer capacitance Crss — 29 — pF
VDS = 10 V, VGS = 0,
f = 1 MHz
Turn - on delay time td(on) — 11 — ns
Rise time tr — 38 — ns
Turn - off delay time td(off) — 49 — ns
Fall time tf — 3.1 — ns
ID = 1 A, VGS = 10 V,
RL = 10 Ω, Rg = 4.7 Ω
Total gate charge Qg — 8.9 — nC
Gate to source charge Qgs — 1.3 — nC
Gate to drain charge Qgd — 1.0 — nC
VDD = 10 V, VGS = 10 V,
ID = 5A
Body - drain diode for ward voltage VDF — 0.8 — V IF = 1.5 A, VGS = 0 Note3
Notes: 3. Pulse test
RQK0601AGDQS
Rev.4.00 Jun 22, 2006 page 3 of 6
Main Characteristics
0.01
0.1
1
10
0.1 1 10 1000.01
100
5
10
4
8
3
6
2
4
1
2
00
0
1
2
3
4
5
01
2
0.0001
0.001
0.01
0.1
1.5020.5 1 32.5 –25 0 25 50 75 100 125 150
345
1
0.1
1
10
V
DS
= 10 V
Pulse Test
–25°C
I
D
= 10 mA
1 mA
Tc = 75°C
25°C
V
DS
= 10 V
Pulse Test
Tc = 75°C
25°C
–25°C
V
DS
= 10 V
Pulse Test
100 µA
2.3 V
2.4 V
2.1 V
V
GS = 0 V
10 V
5 V
7 V, 9 V
3 V
2.5 V
2.6 V
2.7 V
2.8 V
2.2 V
Pulse Test
Tc = 25
°C
2 V
2.0
1.5
0.5
0
1.0
0 25 75 100 125 15050
DC Operation
PW = 10 ms
100 µs
1 ms
Ta = 25°C
1 Shot Pulse
Ambient Temperature Ta (°C)
Channel Dissipation Pch (W)
Maximum Channel Power
Dissipation Curve Maximum Safe Operation Area
Drain to Source Voltage VDS (V)
Drain Current ID (A)
Drain Current ID (A)
Typical Output Characteristics
Drain to Source Voltage VDS (V)
Typical Transfer Characteristics (1)
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Typical Transfer Characteristics (2)
Gate to Source Voltage VGS (V)
Drain Current ID (A)
Gate to Source Cutoff Voltage vs.
Case Temperature
Case Temperature Tc (°C)
Gate to Source Cutoff Voltage
VGS(off) (V)
*When using the glass epoxy board (FR-4: 40 × 40 × 1 mm)
Operation in this area
is limited by R
DS(on)
RQK0601AGDQS
Rev.4.00 Jun 22, 2006 page 4 of 6
0246810
0.1
1
0.01
0.1 1 10010
–25 0 25 50 75 100 125 150 –25 0 25 50 75 100 125 150
0.1
1
10
0.1
1
10
10000
0.1
10
1
100
1000
–25 0 25 50 75 100 125 150
0
100
50
150
200
0
50
100
150
200
100
0
0.05
0.1
0.15
0.2
0.25
0.3
1.5 A
0.5 A
2 A
Pulse Test
Tc = 25°C
0.5 A
1.5 A
I
D
= 3 A
1 A
2 A
I
D
= 0.5 A, 1 A, 1.5 A, 2 A, 3 A
Pulse Test
V
GS
= 4.5 V
Pulse Test
V
GS
= 10 V
I
D
= 3 A
1 A
4.5 V
V
GS
= 10 V
75°C
25°C
Tc = –25°C
Pulse Test
V
DS
= 10 V
Pulse Test
Tc = 25°C
Pulse Test
V
GS
= 0 V
V
DS
= 60 V
Drain to Source Saturation Voltage vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Drain to Source Saturation Voltage VDS(on) (V)
Static Drain to Source on State Resistance
vs. Drain Current
Drain Current ID (A)
Drain to Source on State Resistance
RDS(on) (Ω)
Static Drain to Source on State Resistance
vs. Case Temperature
Case Temperature Tc (°C)
Drain to Source on State Resistance
RDS(on) (mΩ)
Static Drain to Source on State Resistance
vs. Case Temperature
Case Temperature Tc (°C)
Drain to Source on State Resistance
RDS(on) (mΩ)
Forward Transfer Admittance vs.
Drain Current
Drain Current ID (A)
Forward Transfer Admittance |yfs| (S)
Zero Gate Voltage Drain current vs.
Case Temperature
Case Temperature Tc (°C)
Zero Gate Voltage Drain current IDSS (nA)
RQK0601AGDQS
Rev.4.00 Jun 22, 2006 page 5 of 6
0204060
10
1000
100
10000
–10 –5 0 5 10
0 0.80.4 1.2 1.6 2.0
3
5
4
2
1
0
0.4
0.2
0.3
0.5
0.7
0.6
0.8
–25 0 25 50 75 100 125 150
0.1
1
10
100
1000
0.01 0.1 1.0 10
500
600
700
800
900
1000
V
DS
= 0 V
f = 1 MHz
1 mA
I
D
= 10 mA
V
GS
= 0
V
GS
= 0 V
f = 1 MHz
Coss
Crss
Ciss
td(off)
td(on)
tr
tf
V
DD
= 10 V
V
GS
= 10 V
Rg = 4.7 Ω
P
W
= 5 µs
Tc = 25°C
0 V, –5 V
–10 V
Pulse Test
Tc = 25°C
V
GS
= 10 V
5 V
04812 16
100
80
60
20
40
16
12
8
4
I
D
= 5.0 A
Tc = 25°C V
DD
= 10 V V
GS
V
DS
50 V
V
DD
= 50 V
25 V
10 V
25 V
0
0
Drain to Source Voltage V
DS
(V)
Dynamic Input Characteristics
Gate Charge Qg (nC)
Gate to Source Voltage V
GS
(V)
Switching Characteristics
Drain Current I
D
(A)
Switching Time t (ns)
Typical Capacitance vs.
Drain to Source Voltage
Drain to Source Voltage V
DS
(V)
Ciss, Coss, Crss (pF)
Input Capacitance vs.
Gate to Source Voltage
Gate to Source Voltage VGS (V)
Ciss (pF)
Reverse Drain Current I
DR
(A)
Reverse Drain Current vs.
Source to Drain Voltage
Source Drain Voltage V
SD
(V)
Body-Drain Diode Forward Voltage vs.
Case Temperature
Case Temperature Tc (°C)
Body-Drain Diode Forward Voltage V
SDF
(V)
RQK0601AGDQS
Rev.4.00 Jun 22, 2006 page 6 of 6
Package Dimensions
4.5 ± 0.1
1.8 Max 1.5 ± 0.1
0.44 Max
0.44 Max
0.48 Max
0.53 Max
1.5 1.5
3.0
2.5 ± 0.1
4.25 Max
0.8 Min
φ1
0.4
(1.5)
(2.5)
(0.4)
(0.2)
Previous Code
PLZZ0004CA-A UPAK / UPAKV
MASS[Typ.]
0.050gSC-62
RENESAS CodeJEITA Package Code Unit: mm
Package Name
UPAK
Ordering Information
Part Name Quantity Shipping Container
RQK0601AGDQSTL-E 1000 pcs. φ178 reel, 12 mm Emboss taping
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