PB1000 ... PB1010, PB1000S ... PB1010S PB1000 ... PB1010, PB1000S ... PB1010S Silicon-Bridge-Rectifiers Silizium-Bruckengleichrichter Version 2011-03-22 Type: PB... Nominal current - Nennstrom Type: PB...S 12.70.3 10.9 Alternating input voltage Eingangswechselspannung 0.5 Type: PB... 10.90.5 = O 3.9 O 3.6 15.10.2 Type: PB...S 6.3 19 19 1.2 19 x 19 x 6.8 [mm] 5.5 g 15.1 x 15.1 x 6.3 [mm] Plastic case with Al-bottom - Kunststoffgehause mit Alu-Boden Weight approx. - Gewicht ca. 0.5 6.80.2 35...700 V Plastic case - Kunststoffgehause Weight approx. - Gewicht ca. _ = 190.2 10 A 1.0 3.5 g Plastic material has UL classification 94V-0 Gehausematerial UL94V-0 klassifiziert Standard packaging bulk Standard Lieferform lose im Karton Dimensions - Mae [mm] Recognized Product - Underwriters Laboratories Inc.(R) File E175067 Anerkanntes Produkt - Underwriters Laboratories Inc.(R) Nr. E175067 Maximum ratings Type Typ Grenzwerte Max. alternating input voltage Max. Eingangswechselspannung VVRMS [V] Repetitive peak reverse voltage Periodische Spitzensperrspannung VRRM [V] 1) PB1000 / PB1000S 35 50 PB1001 / PB1001S 70 100 PB1002 / PB1002S 140 200 PB1004 / PB1004S 280 400 PB1006 / PB1006S 420 600 PB1008 / PB1008S 560 800 PB1010 / PB1010S 700 1000 Repetitive peak forward current Periodischer Spitzenstrom f > 15 Hz IFRM 50 A 2) Peak forward surge current, 50/60 Hz half sine-wave Stostrom fur eine 50/60 Hz Sinus-Halbwelle TA = 25C IFSM 135/150 A 1) Rating for fusing, t < 10 ms Grenzlastintegral, t < 10 ms TA = 25C i2t Operating junction temperature - Sperrschichttemperatur Storage temperature - Lagerungstemperatur 1 2 Tj TS 93 A2s -50...+150C -50...+150C Per diode - Pro Diode Valid, if leads are kept at ambient temperature at a distance of 5 mm from case Gultig, wenn die Anschlussdrahte in 5 mm Abstand vom Gehause auf Umgebungstemperatur gehalten werden (c) Diotec Semiconductor AG http://www.diotec.com/ 1 PB1000 ... PB1010, PB1000S ... PB1010S Characteristics Kennwerte 2 Max. current with cooling fin 300 cm Dauergrenzstrom mit Kuhlblech 300 cm2 TA = 50C R-load C-load IFAV 10.0 A 8.0 A Forward voltage Durchlass-Spannung Tj = 25C IF = 5 A VF < 1.2 V 1) Leakage current Sperrstrom Tj = 25C VR = VRRM IR < 10 A Isolation voltage terminals to case Isolationsspannung Anschlusse zum Gehause VISO > 2500 V Thermal Resistance Junction - Case Warmewiderstand Sperrschicht - Gehause RthC < 3.3 K/W Admissible torque for mounting Zulassiges Anzugsdrehmoment M4 120 9 10% lb.in 1 10% Nm 102 [%] [A] 100 Tj = 125C 10 80 60 Tj = 25C 1 40 -1 10 20 IF IFAV 0 0 TA 50 100 150 [C] 10-2 Rated forward current vs. ambient temperature Zul. Richtstrom in Abh. von der Umgebungstemp. 1 2 150a-(5a-1.2v) 0.4 VF 0.8 1.0 1.2 1.4 [V] 1.8 Forward characteristics (typical values) Durchlasskennlinien (typische Werte) Per diode - Pro Diode http://www.diotec.com/ (c) Diotec Semiconductor AG