(E2) 2 (C1) 3 108 93 0 .2 5 14 11 14 11 14 3 2 62 11 13 20 1 4-O 6.5 5(E1) 4(G1) 48 0 .2 5 3-M6 5 4 25 9 16 9 24 16 30 +1.0 - 0.5 8 16 25 6 (C2E1) 1 7 23 LABEL Dimension:mm ollector-mitter oltage ate-mitter oltage ollector ower issipation unction emperature ange torage emperature ange ollector urrent (erminal to ase ,inute) solation oltage odule ase to eatsink ounting orque usbar to ain erminal , . (kgfcm) ollector-mitter ut-ff urrent ate-mitter eakage urrent . . . = 1200V,= 0V . = 20V,= 0V . ollector-mitter aturation oltage = 400A,= 15V . . ate-mitter hreshold oltage = 5V,= 400mA . . nput apacitance witching ime ise urn-on all urn-off ime ime ime ime eak orward oltage everse ecovery ime = 10V,= 0V,= 1MH 25,000 = 600V L= 1.5 G= 1 = 15V . . . . . . . . orward urrent . . . = 400A,= 0V . . = 400A,= -10V i/t= 800A/s . . . . hermal mpedance iode th(j-c) Junction to Case http://store.iiic.cc/ . . . Fig.2- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Fig.1- Output Characteristics (Typical) TC=25 VGE =20V 12V I C=200A 10V 15V Collector Current I C (A) 600 9V 400 8V 200 7V 0 0 2 TC=25 16 Collector to Emitter Voltage V CE (V) 800 4 6 8 14 400A 12 10 8 6 4 2 0 10 0 4 Fig.3- Collector to Emitter On Voltage vs. Gate to Emitter Voltage (Typical) Collector to Emitter Voltage V CE (V) Collector to Emitter Voltage V CE (V) 12 10 8 6 4 2 4 8 12 16 16 RL=1.5 TC=25 700 14 600 12 500 10 8 400 VCE =600V 6 300 400V 200 2 100 0 20 0 500 1000 10000 Coes 5000 2000 Cres 500 tOFF 1 0.8 tf 0.6 0.4 0.2 0.5 1 2 5 10 20 0 3000 V CC=600V R G= 1.0 V GE =15V TC=25 1.2 Switching Time t (s) Capacitance C (pF) 20000 0.2 2500 1.4 VGE=0V f=1MHZ TC=25 Cies 0.1 2000 Fig.6- Collector Current vs. Switching Time (Typical) Fig.5- Capacitance vs. Collector to Emitter Voltage (Typical) 200 1500 Total Gate Charge Qg (nC) 100000 1000 4 200V Gate to Emitter Voltage V GE (V) 50000 20 50 100 200 0 tON tr 0 100 200 Collector Current IC (A) Collector to Emitter Voltage V CE (V) http://store.iiic.cc/ 300 400 Gate to Emitter Voltage V GE (V) 400A 0 16 800 800A 14 0 12 Fig.4- Gate Charge vs. Collector to Emitter Voltage (Typical) TC=125 I C=200A 8 Gate to Emitter Voltage V GE (V) Collector to Emitter Voltage V CE (V) 16 800A Fig.8- Forward Characteristics of Free Wheeling Diode (Typical) Fig.7- Series Gate Impedance vs. Switching Time (Typical) 800 10 VCC=600V I C=400A VGE =15V TC=25 TC=25 toff ton 2 tr 1 tf 0.5 0.2 0.1 0.05 600 500 400 300 200 100 0.5 1 2 5 10 20 0 50 0 1 2 3 4 Forward Voltage V F (V) Series Gate Impedance R G () Fig.9- Reverse Recovery Characteristics (Typical) Fig.10- Reverse Bias Safe Operating Area 1000 5000 IF=400A TC=25 R G=1 V GE=15V TC125 2000 1000 500 500 300 Collector Current I C (A) trr 200 100 50 I RrM 200 100 50 20 10 2 1 20 0.5 0.2 400 800 1200 1600 2000 0.1 2400 0 400 -di/dt (A/s) 800 Fig.11- Transient Thermal Impedance 5x10 -1 2x10 -1 1x10 -1 5x10 -2 FRD IGBT 2x10 -2 1x10 -2 5x10 -3 2x10 -3 1x10 -3 TC=25 5x10 -4 2x10 -4 10 -5 1200 Collector to Emitter Voltage V CE (V) 1 (/W) 0 (J-C) 10 Transient Thermal Impedance Rth Peak Reverse Recovery Current I RrM (A) Reverse Recovery Time trr (ns) TC=125 700 Forward Current I F (A) Switching Time t (s) 5 1 Shot Pulse 10 -4 10 -3 10 -2 10 -1 Time t (s) http://store.iiic.cc/ 1 10 1 1600